新型半导体材料和红外器件的输运性质研究
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摘要
本文主要是利用深低温强磁场条件下的变磁场霍耳效应测量和Shubnikov-de Hass(SdH)测量,并借助多载流子输运分析——迁移率谱分析技术,研究了p型ZnO薄膜和三种新型半导体红外器件结构——GaAs单周期远红外反射镜结构,InAsSb量子点中红外发光二极管结构和InAs/GaSb/AlSb量子级联激光器多层结构在磁场下的输运性质。
通常情况下,由于本征缺陷的自补偿作用和受主掺杂物的低固溶度,p型ZnO的制备一般需要较高的受主掺杂浓度,从而制约了高空穴迁移率的获得。通过变温霍耳效应测量,我们证实并分析了超声喷雾热解方法生长的N-In共掺杂p型ZnO薄膜中的高空穴迁移率和空穴浓度的热激发行为。根据多晶半导体的电学输运理论并结合结构测量分析可知,N-In共掺杂ZnO薄膜是由平均晶粒尺寸为8-10 nm的微晶粒组成的,由于各晶粒之间的能带平坦,从而不存在晶界势垒对空穴迁移率的限制。同时我们计算了各种散射机制对空穴迁移率的贡献,发现在低温和高温下制约空穴迁移率的主要散射机制分别为电离杂质散射和声学声子散射。正是由于缺乏晶界势垒效应和存在较弱的电离杂质散射从而导致了N-In共掺杂p型ZnO薄膜中的高空穴迁移率。另外我们分析了空穴浓度随温度的热激发行为,从中获得的低激发能(~20 meV)是对应于晶界陷阱能级,而非受主能级。N-In共掺杂p型ZnO薄膜的电导率随温度的关系则表现为跳跃电导机制。为了进一步确认霍耳效应测量结果,我们研究了不同浓度的N-In共掺杂p型ZnO薄膜的拉曼光谱性质,并从中提取了空穴浓度和迁移率值。光学分析结果很好地符合了霍耳实验数据,一方面说明了光学分析方法的可行性,另一方面也证明了N-In共掺杂p型ZnO薄膜中高空穴迁移率的可靠性。由此我们获得了一种提取载流子输运参数的光学分析方法,这对于p型ZnO特别是高电阻率ZnO薄膜的输运性质的研究具有重要的意义。
值得注意的是,半导体中不同能量的载流子在输运过程中受到的散射程度是不同的,从而导致了载流子的速度统计分布。在弱电场的弛豫时间近似下,载流子的速度统计分布可以看成是载流子浓度对迁移率的分布。然而固定磁场下传统霍耳效应测量由于忽略了载流子弛豫时间和能量的依赖关系,因而无法获得样品中可能存在的多种载流子的输运信息。但是建立在载流子弛豫时间分布的玻尔兹曼输运理论基础上的迁移率谱分析技术可以通过变磁场霍耳效应测量将样品中的多种载流子输运参数分别提取出来。
为了深入研究p型ZnO薄膜中的载流子输运性质以及不同的掺杂机制,我们对N-In共掺杂和N掺杂p型ZnO薄膜进行了变磁场霍耳效应测量和迁移率谱分析计算。从中我们分别提取了三种不同载流子的输运信息,包括来自ZnO薄膜的自由电子和自由空穴以及来自ZnO薄膜与本征Si衬底之间界面层的二维空穴气。其中ZnO薄膜中的自由电子和自由空穴的室温迁移率都大于100 cm2/Vs,但由于它们对电导率的贡献会相互抵消,所以通过p型掺杂得到的ZnO薄膜一般都表现出低迁移率的弱p型或弱n型电导。此时正是因为有了高迁移率的二维空穴气的存在,才使得生长在本征Si衬底上的p型ZnO薄膜呈现出高迁移率和高导电性。这也是为什么相同生长条件下在绝缘衬底和本征Si衬底上生长的ZnO薄膜的导电性会产生如此大差异的原因。结合对N-In共掺杂和N掺杂p型ZnO薄膜的光致发光性质的分析,我们发现N-In共掺杂技术导致了受主束缚能的减小和施主束缚能的增大,而且与N掺杂ZnO相比,N-In共掺杂ZnO中的受主能级得到了进一步的展宽。这与我们在N-In共掺杂ZnO的迁移率谱中观察到的自由空穴浓度的增大是一致的。同时由于In元素的引入,N-In共掺杂ZnO的自由电子浓度也略高于N掺杂ZnO。此外我们还揭示了N-In共掺杂和N掺杂p型ZnO薄膜中不同的载流子复合过程,以及非掺杂ZnO薄膜中的深能级可见发光峰(~2.5 eV)的来源。
其次,我们研究了掺杂/非掺杂GaAs单周期远红外反射镜结构在磁场下的输运性质。通过变磁场霍耳效应测量和迁移率谱分析方法,以及低温强磁场下的SdH测量,我们计算得到了该反射镜结构的电子浓度、迁移率和量子散射时间,并揭示了在低温下的主要散射机制为电离杂质散射。同时我们采用菲涅耳系数矩阵法计算了该反射镜结构随纵向深度变化的能流分布,发现能流衰减主要是发生在较厚的重掺杂GaAs层。虽然计算得到的该反射镜结构的反射率要低于传统的工作在近红外和中红外的分布式布喇格反射镜,但是比单一的掺杂GaAs层的反射率增大了两倍,说明在较宽的远红外范围内该反射镜结构都表现出很好的谐振增强效应。为了验证上述光学分析结果,我们在室温下测量了该反射镜结构在空气中的远红外反射谱和透射谱。理论计算结果很好地符合了实验光谱,从而证实了该反射镜结构对于n-GaAs同质结远红外探测器腔体内光吸收的共振增强效应,同时也说明了我们上述光学计算方法的正确性和可靠性。
接着,我们研究了InAsSb量子点中红外发光二极管结构的电学输运性质。由于我们研究的InAs1-xSbx量子点样品的Sb组分(x=0.25)正处在从应变量子阱结构转变为孤立量子点结构的临界处,因此包含了应变量子阱和聚集量子点的结构信息。通过变磁场霍耳效应测量和迁移率谱分析技术,我们提取了样品中三种不同载流子的输运信息,分别是来自聚集量子点结构的重空穴和轻空穴以及来自InAs1-xSbx应变量子阱的二维电子气。同时我们分析了制约三种载流子迁移率的主要散射机制。对于重空穴,电离杂质散射在整个温度范围都占据主导地位;对于轻空穴,合金无序散射和声子散射分别是低温和高温下的主要散射机制;二维电子气的低温迁移率与温度无关,高温下则主要受声子散射影响。通过低温强磁场下的SdH测量,我们获得了来自InAs1-xSbx应变量子阱结构的二维电子气的有效质量和量子散射时间等物理参数。
最后,我们还对InAs/GaSb/AlSb量子级联激光器多层结构在磁场下的输运现象作了详细的研究工作。由于AlSb势垒层的高电阻性,它对整个样品的电导率贡献可以忽略不计。通过变磁场霍耳效应测量结合迁移率谱分析技术,我们分别获得了来自GaSb覆盖层的电子和来自InAs势阱中的二维电子气的输运参数。随着温度的降低,我们发现GaSb电子的迁移率先增大后减小,表现出典型的体载流子的温度行为。由于InAs和GaSb能带的负交迭,InAs势阱中的二维电子气可以直接进入GaSb价带,然后需要穿越多周期的AlSb势垒层才能到达位于样品顶层的电极端,因而其迁移率值要远小于InAs体电子的迁移率。随着温度的降低,二维电子气的迁移率峰逐渐与GaSb电子峰叠加在一起,且在低温下表现出载流子析出行为,从而对电导率的贡献可忽略不计。因此低温强磁场下的SdH振荡主要是由GaSb电子所引起的,计算得到的有效质量也证实了这一点。通过比较低温下的经典散射时间和量子散射时间的比值,我们发现制约GaSb电子低温迁移率的主要散射机制为界面粗糙度散射。
以上的研究得到了国家自然科学基金(10125416, 60576067, 10674094,和10734020),国家重点基础研究项目(2006CB921507)和教育部“长江学者和创新团队发展计划”创新团队计划(IRT0524)的资助。
By the aid of magnetic-field-dependent Hall effect measurements combined with the mobility spectrum analysis (MSA) and Shubnikov-de Hass (SdH) measurements, we have investigated the electrical transport properties of the p-type ZnO thin films and three kinds of novel semiconductor infrared devices, including GaAs far-infrared (FIR) mirror structures, InAsSb quantum dots (QDs) mid-infrared light emitting diodes (LEDs) and InAs/GaSb/AlSb quantum cascade lasers (QCLs) material.
Usually, due to the self-compensation effect from native defects and the low solubility of the acceptor dopants in ZnO, high acceptor doping seemly becomes necessary to obtain p-ZnO, which will result in the low hole mobility. Through temperature-dependent Hall effect measurements, we have achieved the high mobility and conductivity in our studied N-In codoped p-type ZnO thin films. As the average grain size of our polycrystalline p-type ZnO thin films is among 8-10 nm, the bands will be effectively flat. Due to the lack of the grain boundary barrier effect and weak ionized impurity scattering, relatively high mobility can be achieved in our polycrystalline p-ZnO thin films. Meanwhile, we have observed the thermal activating behavior of the hole concentration and the yielded activation energy (~20 meV) is related to the shallow grain boundary trapping level rather than the acceptor level. We have also revealed the scattering and conduction mechanisms in these p-ZnO thin films. As we know, Hall effect measurements will become difficult and unreliability when the measured ZnO samples exhibit high resistivity. Hence, we have established an optical method to extract the useful carrier transport information from the Raman spectrum analysis. The good agreement between Raman and Hall measurements on the transport information demonstrates the reliability of this method and reconfirms the obtained high mobility in our p-ZnO thin films.
It should be noted that the carriers with different energy will be scattered differently in the transport process, which results in the statistical distribution of carrier velocity. Under the relaxation time approximation at weak electric field, the statistical distribution of carrier velocity will be considered as the mobility distribution of carrier concentration. However, the dependency of relaxation times on energy is neglected in the classic Hall effect measurements under a single magnetic field and cannot be employed for obtaining the individual transport information of multi-carrier in measured samples. Fortunately, the magnetic-field-dependent Hall effect measurements have the ability to extract the transport parameters of all carrier species present within samples that are contributing to the conduction process by using the MSA, based on the distribution of relaxation times. The MSA transforms the experimental Hall data into the dependence of the conductivity density function on mobility, in which each carrier contributing to the total conductivity appears as a separate peak at a given mobility.
In order to reveal the carrier transport properties and different doping mechanisms, we have presented a compared investigation of N-In codoped and N-doped p-type ZnO thin films on the basis of the magnetic-field-dependent Hall effect measurements followed by the MSA. The transport information of three carrier species has been obtained, including the free electrons and holes from ZnO thin film as well as the two-dimensional hole gas (2DHG) from the interface between ZnO film and intrinsic silicon substrate. The yielded mobilities of free electrons and holes at room temperature are both larger than 100 cm2/Vs. When the conductivity contributions between free electrons and free holes are comparable, the existence of high mobility 2DHG becomes especially important and results in the high mobility and conductivity of p-ZnO thin films grown on intrinsic silicon substrates. Through the investigation of temperature-dependent photoluminescence spectra, we have clarified that the N-In codoping, compared with the N-doping, leads to the decrement of acceptor binding energy and increment of donor binding energy in ZnO, and also broadens the acceptor level. This result is consistent with the observation of more free hole concentration in the mobility spectra for N-In codoped ZnO. Meanwhile, the introducing of In dopants results in the more free electron concentration in N-In codoped ZnO. In addition, we have revealed the different carrier recombination processes in N-In codoped and N-doped p-type ZnO thin films, as well as the mechanism of the deep-level visible emission (~2.5 eV) in undoped ZnO.
Secondly, we investigate the carrier transport and optical properties in doped/undoped GaAs single-period FIR mirror structures for GaAs-based FIR device application. Through variable magnetic field Hall and SdH measurements, the carrier concentration, mobility and scattering times are obtained and analyzed. It is found that ionized impurity scattering is the dominant scattering mechanism at low temperatures for the GaAs FIR mirror structures. The calculation of energy flux along the depth of the mirror structures shows that most of the absorption falls inside the highly doped bottom GaAs layer. Even though the reflection is lower than the traditional distributed Bragg reflectors (DBRs) working in the near- and mid-infrared, the present GaAs single-period FIR mirror structures show perfect enhancement effect in a wide FIR region compared with a single doped GaAs layer. The calculated FIR transmission and reflection spectra agree well with the experimental results for the mirror structures, demonstrating that all the optical analysis about GaAs FIR mirror structures is reliable.
Thirdly, we investigate the electrical transport properties of InAs1-xSbx QDs mid-infrared LEDs under magnetic field. With relatively small Sb content (x=0.2), the InAs1-xSbx sample exhibits quite a smooth continues strained layer. Coalesced QDs and isolated QDs are formed with increasing Sb composition (x=0.2-0.3) and hence strain, while our studied InAs1-xSbx sample is just at the critical composition (x=0.25). The transport information of three carrier species has been obtained through magnetic-field-dependent Hall measurements followed by the MSA, including heavy holes and light holes from coalesced InAsSb QDs, as well as two-dimensional electron gas (2DEG) from InAs1-xSbx strained layer. The major scattering mechanism for heavy holes is ionized impurity scattering. While alloy scattering limits the low temperature mobility and photon scattering limits the high temperature mobility for light holes. The 2DEG mobility exhibits temperature-independent at low temperatures and decreases with temperature due to the photon scattering limits at high temperatures. We have also analyzed the effective mass and quantum scattering time of 2DEG by using SdH measurements.
Finally, we have studied the carrier transport phenomenon in InAs/GaSb/AlSb QCLs multilayer structures. The transport information of electrons in GaSb cladding layer and 2DEG from InAs quantm wells have been extracted and analyzed. The electron mobility in GaSb exhibits the characteristic behavior of bulk carrier. While the 2DEG mobility is much smaller than the electron mobility in InAs film because of the block off effect from multi-periods of AlSb barrier layer. With the decrease of temperature, the mobility peak of 2DEG coincides with the peak of GaSb electrons and its conductivity contribution can be ignored at very low temperatures due to the carrier freeze-out behavior. Therefore we have observed the SdH oscillations mainly from GaSb electrons and calculated effective mass and quantum scattering time. Through the ratio between classical scattering time and quantum scattering time, we can identify interface roughness scattering as the dominant scattering mechanism at low temperatures for GaSb electrons.
This work is supported in part by the Natural Science Foundation of China under Contract Nos. 10125416, 60576067, 10674094, and 10734020, National Major Basic Research Project of 2006CB921507, and Innovative Research Team in University (PCSIRT) of IRT0524.
通常情况下,由于本征缺陷的自补偿作用和受主掺杂物的低固溶度,p型ZnO的制备一般需要较高的受主掺杂浓度,从而制约了高空穴迁移率的获得。通过变温霍耳效应测量,我们证实并分析了超声喷雾热解方法生长的N-In共掺杂p型ZnO薄膜中的高空穴迁移率和空穴浓度的热激发行为。根据多晶半导体的电学输运理论并结合结构测量分析可知,N-In共掺杂ZnO薄膜是由平均晶粒尺寸为8-10 nm的微晶粒组成的,由于各晶粒之间的能带平坦,从而不存在晶界势垒对空穴迁移率的限制。同时我们计算了各种散射机制对空穴迁移率的贡献,发现在低温和高温下制约空穴迁移率的主要散射机制分别为电离杂质散射和声学声子散射。正是由于缺乏晶界势垒效应和存在较弱的电离杂质散射从而导致了N-In共掺杂p型ZnO薄膜中的高空穴迁移率。另外我们分析了空穴浓度随温度的热激发行为,从中获得的低激发能(~20 meV)是对应于晶界陷阱能级,而非受主能级。N-In共掺杂p型ZnO薄膜的电导率随温度的关系则表现为跳跃电导机制。为了进一步确认霍耳效应测量结果,我们研究了不同浓度的N-In共掺杂p型ZnO薄膜的拉曼光谱性质,并从中提取了空穴浓度和迁移率值。光学分析结果很好地符合了霍耳实验数据,一方面说明了光学分析方法的可行性,另一方面也证明了N-In共掺杂p型ZnO薄膜中高空穴迁移率的可靠性。由此我们获得了一种提取载流子输运参数的光学分析方法,这对于p型ZnO特别是高电阻率ZnO薄膜的输运性质的研究具有重要的意义。
值得注意的是,半导体中不同能量的载流子在输运过程中受到的散射程度是不同的,从而导致了载流子的速度统计分布。在弱电场的弛豫时间近似下,载流子的速度统计分布可以看成是载流子浓度对迁移率的分布。然而固定磁场下传统霍耳效应测量由于忽略了载流子弛豫时间和能量的依赖关系,因而无法获得样品中可能存在的多种载流子的输运信息。但是建立在载流子弛豫时间分布的玻尔兹曼输运理论基础上的迁移率谱分析技术可以通过变磁场霍耳效应测量将样品中的多种载流子输运参数分别提取出来。
为了深入研究p型ZnO薄膜中的载流子输运性质以及不同的掺杂机制,我们对N-In共掺杂和N掺杂p型ZnO薄膜进行了变磁场霍耳效应测量和迁移率谱分析计算。从中我们分别提取了三种不同载流子的输运信息,包括来自ZnO薄膜的自由电子和自由空穴以及来自ZnO薄膜与本征Si衬底之间界面层的二维空穴气。其中ZnO薄膜中的自由电子和自由空穴的室温迁移率都大于100 cm2/Vs,但由于它们对电导率的贡献会相互抵消,所以通过p型掺杂得到的ZnO薄膜一般都表现出低迁移率的弱p型或弱n型电导。此时正是因为有了高迁移率的二维空穴气的存在,才使得生长在本征Si衬底上的p型ZnO薄膜呈现出高迁移率和高导电性。这也是为什么相同生长条件下在绝缘衬底和本征Si衬底上生长的ZnO薄膜的导电性会产生如此大差异的原因。结合对N-In共掺杂和N掺杂p型ZnO薄膜的光致发光性质的分析,我们发现N-In共掺杂技术导致了受主束缚能的减小和施主束缚能的增大,而且与N掺杂ZnO相比,N-In共掺杂ZnO中的受主能级得到了进一步的展宽。这与我们在N-In共掺杂ZnO的迁移率谱中观察到的自由空穴浓度的增大是一致的。同时由于In元素的引入,N-In共掺杂ZnO的自由电子浓度也略高于N掺杂ZnO。此外我们还揭示了N-In共掺杂和N掺杂p型ZnO薄膜中不同的载流子复合过程,以及非掺杂ZnO薄膜中的深能级可见发光峰(~2.5 eV)的来源。
其次,我们研究了掺杂/非掺杂GaAs单周期远红外反射镜结构在磁场下的输运性质。通过变磁场霍耳效应测量和迁移率谱分析方法,以及低温强磁场下的SdH测量,我们计算得到了该反射镜结构的电子浓度、迁移率和量子散射时间,并揭示了在低温下的主要散射机制为电离杂质散射。同时我们采用菲涅耳系数矩阵法计算了该反射镜结构随纵向深度变化的能流分布,发现能流衰减主要是发生在较厚的重掺杂GaAs层。虽然计算得到的该反射镜结构的反射率要低于传统的工作在近红外和中红外的分布式布喇格反射镜,但是比单一的掺杂GaAs层的反射率增大了两倍,说明在较宽的远红外范围内该反射镜结构都表现出很好的谐振增强效应。为了验证上述光学分析结果,我们在室温下测量了该反射镜结构在空气中的远红外反射谱和透射谱。理论计算结果很好地符合了实验光谱,从而证实了该反射镜结构对于n-GaAs同质结远红外探测器腔体内光吸收的共振增强效应,同时也说明了我们上述光学计算方法的正确性和可靠性。
接着,我们研究了InAsSb量子点中红外发光二极管结构的电学输运性质。由于我们研究的InAs1-xSbx量子点样品的Sb组分(x=0.25)正处在从应变量子阱结构转变为孤立量子点结构的临界处,因此包含了应变量子阱和聚集量子点的结构信息。通过变磁场霍耳效应测量和迁移率谱分析技术,我们提取了样品中三种不同载流子的输运信息,分别是来自聚集量子点结构的重空穴和轻空穴以及来自InAs1-xSbx应变量子阱的二维电子气。同时我们分析了制约三种载流子迁移率的主要散射机制。对于重空穴,电离杂质散射在整个温度范围都占据主导地位;对于轻空穴,合金无序散射和声子散射分别是低温和高温下的主要散射机制;二维电子气的低温迁移率与温度无关,高温下则主要受声子散射影响。通过低温强磁场下的SdH测量,我们获得了来自InAs1-xSbx应变量子阱结构的二维电子气的有效质量和量子散射时间等物理参数。
最后,我们还对InAs/GaSb/AlSb量子级联激光器多层结构在磁场下的输运现象作了详细的研究工作。由于AlSb势垒层的高电阻性,它对整个样品的电导率贡献可以忽略不计。通过变磁场霍耳效应测量结合迁移率谱分析技术,我们分别获得了来自GaSb覆盖层的电子和来自InAs势阱中的二维电子气的输运参数。随着温度的降低,我们发现GaSb电子的迁移率先增大后减小,表现出典型的体载流子的温度行为。由于InAs和GaSb能带的负交迭,InAs势阱中的二维电子气可以直接进入GaSb价带,然后需要穿越多周期的AlSb势垒层才能到达位于样品顶层的电极端,因而其迁移率值要远小于InAs体电子的迁移率。随着温度的降低,二维电子气的迁移率峰逐渐与GaSb电子峰叠加在一起,且在低温下表现出载流子析出行为,从而对电导率的贡献可忽略不计。因此低温强磁场下的SdH振荡主要是由GaSb电子所引起的,计算得到的有效质量也证实了这一点。通过比较低温下的经典散射时间和量子散射时间的比值,我们发现制约GaSb电子低温迁移率的主要散射机制为界面粗糙度散射。
以上的研究得到了国家自然科学基金(10125416, 60576067, 10674094,和10734020),国家重点基础研究项目(2006CB921507)和教育部“长江学者和创新团队发展计划”创新团队计划(IRT0524)的资助。
By the aid of magnetic-field-dependent Hall effect measurements combined with the mobility spectrum analysis (MSA) and Shubnikov-de Hass (SdH) measurements, we have investigated the electrical transport properties of the p-type ZnO thin films and three kinds of novel semiconductor infrared devices, including GaAs far-infrared (FIR) mirror structures, InAsSb quantum dots (QDs) mid-infrared light emitting diodes (LEDs) and InAs/GaSb/AlSb quantum cascade lasers (QCLs) material.
Usually, due to the self-compensation effect from native defects and the low solubility of the acceptor dopants in ZnO, high acceptor doping seemly becomes necessary to obtain p-ZnO, which will result in the low hole mobility. Through temperature-dependent Hall effect measurements, we have achieved the high mobility and conductivity in our studied N-In codoped p-type ZnO thin films. As the average grain size of our polycrystalline p-type ZnO thin films is among 8-10 nm, the bands will be effectively flat. Due to the lack of the grain boundary barrier effect and weak ionized impurity scattering, relatively high mobility can be achieved in our polycrystalline p-ZnO thin films. Meanwhile, we have observed the thermal activating behavior of the hole concentration and the yielded activation energy (~20 meV) is related to the shallow grain boundary trapping level rather than the acceptor level. We have also revealed the scattering and conduction mechanisms in these p-ZnO thin films. As we know, Hall effect measurements will become difficult and unreliability when the measured ZnO samples exhibit high resistivity. Hence, we have established an optical method to extract the useful carrier transport information from the Raman spectrum analysis. The good agreement between Raman and Hall measurements on the transport information demonstrates the reliability of this method and reconfirms the obtained high mobility in our p-ZnO thin films.
It should be noted that the carriers with different energy will be scattered differently in the transport process, which results in the statistical distribution of carrier velocity. Under the relaxation time approximation at weak electric field, the statistical distribution of carrier velocity will be considered as the mobility distribution of carrier concentration. However, the dependency of relaxation times on energy is neglected in the classic Hall effect measurements under a single magnetic field and cannot be employed for obtaining the individual transport information of multi-carrier in measured samples. Fortunately, the magnetic-field-dependent Hall effect measurements have the ability to extract the transport parameters of all carrier species present within samples that are contributing to the conduction process by using the MSA, based on the distribution of relaxation times. The MSA transforms the experimental Hall data into the dependence of the conductivity density function on mobility, in which each carrier contributing to the total conductivity appears as a separate peak at a given mobility.
In order to reveal the carrier transport properties and different doping mechanisms, we have presented a compared investigation of N-In codoped and N-doped p-type ZnO thin films on the basis of the magnetic-field-dependent Hall effect measurements followed by the MSA. The transport information of three carrier species has been obtained, including the free electrons and holes from ZnO thin film as well as the two-dimensional hole gas (2DHG) from the interface between ZnO film and intrinsic silicon substrate. The yielded mobilities of free electrons and holes at room temperature are both larger than 100 cm2/Vs. When the conductivity contributions between free electrons and free holes are comparable, the existence of high mobility 2DHG becomes especially important and results in the high mobility and conductivity of p-ZnO thin films grown on intrinsic silicon substrates. Through the investigation of temperature-dependent photoluminescence spectra, we have clarified that the N-In codoping, compared with the N-doping, leads to the decrement of acceptor binding energy and increment of donor binding energy in ZnO, and also broadens the acceptor level. This result is consistent with the observation of more free hole concentration in the mobility spectra for N-In codoped ZnO. Meanwhile, the introducing of In dopants results in the more free electron concentration in N-In codoped ZnO. In addition, we have revealed the different carrier recombination processes in N-In codoped and N-doped p-type ZnO thin films, as well as the mechanism of the deep-level visible emission (~2.5 eV) in undoped ZnO.
Secondly, we investigate the carrier transport and optical properties in doped/undoped GaAs single-period FIR mirror structures for GaAs-based FIR device application. Through variable magnetic field Hall and SdH measurements, the carrier concentration, mobility and scattering times are obtained and analyzed. It is found that ionized impurity scattering is the dominant scattering mechanism at low temperatures for the GaAs FIR mirror structures. The calculation of energy flux along the depth of the mirror structures shows that most of the absorption falls inside the highly doped bottom GaAs layer. Even though the reflection is lower than the traditional distributed Bragg reflectors (DBRs) working in the near- and mid-infrared, the present GaAs single-period FIR mirror structures show perfect enhancement effect in a wide FIR region compared with a single doped GaAs layer. The calculated FIR transmission and reflection spectra agree well with the experimental results for the mirror structures, demonstrating that all the optical analysis about GaAs FIR mirror structures is reliable.
Thirdly, we investigate the electrical transport properties of InAs1-xSbx QDs mid-infrared LEDs under magnetic field. With relatively small Sb content (x=0.2), the InAs1-xSbx sample exhibits quite a smooth continues strained layer. Coalesced QDs and isolated QDs are formed with increasing Sb composition (x=0.2-0.3) and hence strain, while our studied InAs1-xSbx sample is just at the critical composition (x=0.25). The transport information of three carrier species has been obtained through magnetic-field-dependent Hall measurements followed by the MSA, including heavy holes and light holes from coalesced InAsSb QDs, as well as two-dimensional electron gas (2DEG) from InAs1-xSbx strained layer. The major scattering mechanism for heavy holes is ionized impurity scattering. While alloy scattering limits the low temperature mobility and photon scattering limits the high temperature mobility for light holes. The 2DEG mobility exhibits temperature-independent at low temperatures and decreases with temperature due to the photon scattering limits at high temperatures. We have also analyzed the effective mass and quantum scattering time of 2DEG by using SdH measurements.
Finally, we have studied the carrier transport phenomenon in InAs/GaSb/AlSb QCLs multilayer structures. The transport information of electrons in GaSb cladding layer and 2DEG from InAs quantm wells have been extracted and analyzed. The electron mobility in GaSb exhibits the characteristic behavior of bulk carrier. While the 2DEG mobility is much smaller than the electron mobility in InAs film because of the block off effect from multi-periods of AlSb barrier layer. With the decrease of temperature, the mobility peak of 2DEG coincides with the peak of GaSb electrons and its conductivity contribution can be ignored at very low temperatures due to the carrier freeze-out behavior. Therefore we have observed the SdH oscillations mainly from GaSb electrons and calculated effective mass and quantum scattering time. Through the ratio between classical scattering time and quantum scattering time, we can identify interface roughness scattering as the dominant scattering mechanism at low temperatures for GaSb electrons.
This work is supported in part by the Natural Science Foundation of China under Contract Nos. 10125416, 60576067, 10674094, and 10734020, National Major Basic Research Project of 2006CB921507, and Innovative Research Team in University (PCSIRT) of IRT0524.
引文
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