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SiGeC/Si异质结快速软恢复功率二极管的研究
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摘要
论文将SiGeC/Si异质结技术用于功率二极管反向恢复特性的改进,首先研究分析了Si基应变材料的晶格结构,形成压应变和张应变的机理,尤其是C的引入导致SiGeC材料临界厚度增加及相关器件热稳定性增强的机理。详细分析了SiGeC/Si能带结构特点,依据ΔEC、ΔEv和ΔEg的关系,得出SiGeC/Si异质结能带结构属于“负反向势垒”的结论。推导出SiGeC/Si异质结二极管,在较低、较高正向偏压下的电流密度表达式,解释了SiGeC/Si异质结二极管电流输运机理。
     基于异质结电流传输机理,SiGeC/Si异质结功率二极管实现了低通态压降下高电流密度的传输,改善了二极管的反向恢复特性,同时具有较低的反向漏电流。与少子寿命控制技术相比,SiGeC/Si异质结能带工程更有效的协调了功率二极管中通态压降、反向漏电流和反向恢复时间三者之间的矛盾。对SiGeC合金中的Ge、C含量进行了优化分析,提出在SiGeC/Si异质结二极管中,对于一定的Ge含量存在C含量的临界值,使得二极管的器件特性最优,并解释了该临界值存在的理论依据。
     采用数值拟合的方法,给出了SiGeC材料的迁移率模型和能带结构模型。对比分析了SiGeC/Si和SiGe/Si两种异质结二极管的温度特性,详细分析了二极管中C的引入对器件温度特性的改进,并对其机理进行研究。结果表明:基于C对SiGe合金的应变补偿作用,SiGeC二极管的热稳定性明显提高。与同结构SiGe二极管相比,器件的反向漏电流明显下降,阈值电压漂移显著减小。400K时,SiGeC二极管仍具有快而软的反向恢复特性。
     将理想欧姆结构应用到SiGeC/Si异质结功率二极管中,重点研究了SiGeC/Si异质结理想欧姆接触二极管的击穿机理,提出理想欧姆接触二极管反向阻断特性控制模型,即VBR=min(Vpin'Vpnp)。导出了二极管在不同阻断机制下的反向阻断电压表达式。得到了两种阻断机制相互转化的条件,以及二极管在不同阻断机理控制下,阻断电压与各参数之间的关系。
     提出了一种新型的基区渐变掺杂理想欧姆接触SiGeC二极管。详细分析了基区渐变结构的引入对二极管反向阻断特性提高的理论依据。新结构二极管在大幅提高p-n-p寄生晶体管击穿电压的同时,不会显著降低原p-i-n二极管的击穿电压,在更大的基区浓度变化范围内,都具有较高的阻断电压,这为器件设计提供了更大的自由度。另外,新结构二极管借助于基区渐变掺杂引入的内建电场,使得二极管的反向恢复时间有所减小,同时又不会牺牲器件的正向通态特性,很好的实现了反向阻断特性、反向恢复特性和正向通态特性之间的折中。
     通过简单易行的工艺流程和实施方案,研制出两种不同横向结构尺寸的SiGeC/Si异质结器件结构,并进行测试。测试结果与仿真结果吻合较好。SiGeC/Si异质结器件的研制,一方面为SiGeC p-i-n功率二极管的制备奠定了工艺基础,另一方面验证了模拟所用模型的正确性,为今后SiGeC/Si异质结器件的设计与开发提供可靠的模拟仿真手段。
The SiGeC/Si heterojunction technique is applied to power diodes to improve their reverse recovery characteristics. The lattice structure of strained silicon-based material, the mechanism of compressive and tensile strain, the critical thickness increase of SiGeC material and thermal-stability enhancement of SiGeC related devices are studied in this dissertation. The band structure of SiGeC/Si heteroj unction is analyzed. Based on the proportion betweenΔEC andΔEV inΔEg, it can be concluded that the band structure of SiGeC/Si heteroj unction belongs to'negative-reverse barrier'. The current density expressions of SiGeC/Si diodes are derived under forward bias and their current-transport mechanisms are given.
     Based on the current transport mechanism of heteroj unction, SiGeC/Si diodes are easy to achieve a low on-state voltage drop under high current density, fast and soft reverse recovery characteristics as well as low reverse leakage current. Compared to lifetime control technology, the contradictions among on-state voltage, reverse leakage current and reverse recovery time are coordinated effectively by SiGeC/Si heteroj unction band-gap engineering. The Ge and C contents of SiGeC alloys are optimized and there is a critical value of C, for a certain Ge content, to achieve the best characteristics in SiGeC/Si diodes. The theory foundation of this critical value is also analyzed.
     The mobility models and band structure models of SiGeC are obtained by utilizing numeric fitting method. The temperature characteristics between SiGeC/Si and SiGe/Si diodes are analyzed and the enhancement mechanisms of temperature characteristics are studied by the addition of C into SiGe diodes. The results indicate that the thermal stability of SiGeC diodes is improved remarkably due to the addition of carbon into SiGe system. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased remarkably and its threshold voltage shift is reduced greatly. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400K for SiGeC diodes.
     The ideal ohmic contact is applied to SiGeC/Si heterojunction power diodes. The breakdown mechanism of new diodes is studied. The control model of VBR=min(Vpin,Vpnp) is given for the reverse breakdown characteristics of ideal ohmic contact diodes. The expressions of reverse blocking voltage are derived for different breakdown control modes. The conversion condition of two breakdown voltage control modes is given and the relation between breakdown voltage and structure parameters is also presented.
     A novel structure of ideal ohmic contact SiGeC diodes with base gradual-changing doping is presented. The theory base of reverse breakdown characteristics enhancement is analyzed by the introducing of base gradual-changing doping. The reverse breakdown voltage of p-n-p parasitic transistor in the new diodes is increased substantially, while that of original p-i-n diode is almost not reduced. Therefore, the novel diodes have the merits of high breakdown voltage in a greater range of base doping concentration, which provides more freedom for device design. Besides, because of the inner electrical field of base gradual-changing doping, the reverse recovery time of novel diodes is reduced to some extent without sacrificing their forward characteristics. Based on those, the new diodes can achieve the trade-off among reverse breakdown characteristics and reverse recovery characteristics and forward conducting-state characteristics.
     Two kinds of SiGeC/Si heterojunction devices with different lateral dimension are fabricated using feasible process flows and implement schemes, and then the sample devices are tested. On the one hand, the consistency between test results and numerical results validates the correctness and of the models presented in this dissertation, which provides a reliable numerical method for the advanced design of SiGeC/Si heteroj unction devices. On the other hand, it provides the process base for the manufacture of SiGeC p-i-n power diodes.
引文
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