晶体管输出型光电耦合器辐照及其噪声研究
摘要
随着航天技术、核能技术及其核武器等高新技术的发展需求,越来越多的光电子器件需要正常工作于辐照环境中。辐照在器件中引入大量的氧化层电荷、界面态电荷及体内位错等缺陷,导致电参数退化,从而引起器件暂时失效或永久性失效。因此为保障器件在辐照环境中能正常工作,必须研究器件的辐照损伤机理,研究不同辐照环境中器件的损伤程度并对器件的抗辐照能力进行预先评估及诊断。目前,器件抗辐照评估方法是辐射退火筛选,这种方法周期长,经费高,不可能做大量样品的破坏性辐照实验,更重要的是它不仅不能保证所有的被辐照的器件经过退火后都能够恢复其初始性能,还有可能在被测器件中引入新的潜在缺陷,使器件的可靠性降低。这迫切要求一种简单、快速且完全非破坏性的辐射筛选和抗辐射能力评估技术。
光电耦合器以其体积小、寿命长、无触点、抗干扰性强等优点广泛地应用于航空航天及核技术等领域,因此急需研究光电耦合器在辐照环境中的失效机理及抗辐照评估方法。辐照在光电耦合器件内部引入缺陷,而噪声与器件的内部缺陷密切相关。所以,借助光电耦合器的噪声理论来研究光电耦合器的辐照损伤理论是可行的。
本文系统地研究了晶体管输出型光电耦合器的辐照效应,损伤机理及其评估方法。针对晶体管输出型光电耦合器的结构组成,详细阐述了其噪声理论、辐照机理和辐照效应,建立了光电耦合器的辐照噪声测试系统。详细介绍了光电耦合器的电离总剂量辐照特性和中子注量辐照特性,选用60COγ源进行总剂量电离辐照,首次建立了总剂量辐照下的光电耦合器的电流传输比模型和噪声模型,在反应堆上进行中子注量辐照,研究了光电耦合器的中子辐照电效应和噪声效应,并分析了该中子辐照噪声的分形特性,这为光电耦合器的辐照研究提供了研究思路和数据积累,提出了辐照噪声表征参量,填补了国内外在此领域的空白。结合以上理论,半导体器件原理及光电耦合器的可靠性噪声评估方法,研究了光电耦合器抗辐照能力的噪声评估方法,得到了一些重要研究结果,这些研究结果为更深入地开展半导体器件辐照评估方法奠定了实验和理论基础。
As the rapid developments of advanced technologies of space technology, nuclear technology and nuclear weapons, an increasing number of optoelectronic devices are required to operate properly in irradiation environment. Irradiation introduces defects of oxide charges, interface state charges and internal displacements into the devices, causing a degradation of the electrical parameters and resulting in the devices with a semi-permanent or permanent ineffectiveness. Therefore, to ensure the devices work well in the radiation environment, it is necessary to make researches and diagnosis on their irradiation damage mechanism, damage degree and anti-radiation ability.Radiation-anneal techniques for devices of radiation environment are presently used.The more important thing is that this method will induce some new latent defects in the devices under test,let alone this method is expensive,time-waste and destructive.Under such conditions, a simple, quick and completely non-destructive technology for Radiation-anneal and anti-radiation evaluation is urgently required.
Optocouplers with advantages of small size, long life, non-contact, and strong anti-interference are widely used in aviation and aerospace fields. So,it’s urgent need to research the invalidation mechanism and the anti-radiation evaluation method of optocouplers in radiation environment.Defects are introduced in optocouplers by radiation and the defects are extraordinary correlation with noise.So,It’s feasible to study the radiation damage of optocouplers in virtue of noise theory of optocouplers.
In this paper, the systematic study of the irradiation effects, damage mechanism and evaluation method of optocouplers with transistor output is presented. For the composition of the optocouplers with transistor output, the noise theory, radiation mechanism and radiation effect are expounded, establishing an irradiation noise test system. And described in detail is the irradiation properties of both the total ionizing dose and neutron fluence. By choosing 60COγas the radiation sources to make the total ionizing dose, established a current transfer ratio model and noise model for optocouplers under the irradiation of total dose for the first time. The neutron fluence irradiation is carried out on reactor to study electric and noise effects of optocouplers, and an analysis of the fractal characteristics of the neutron irradiation noise is given, which provides research ideas and data for the irradiation study of optocouplers. A method of using irradiation noise to characterize the related parameters is proposed, which fills in this field at home and abroad.Combining with the above theory, working principles of semiconductor devices and the noise evaluation method for the reliability of optocouplers, noise assessment methods for evaluating the anti-radiation capacity are researched, obtaining important research results which establish the experimental and theoretical basis for the further development of irradiation evaluation methods for semiconductor devices.
光电耦合器以其体积小、寿命长、无触点、抗干扰性强等优点广泛地应用于航空航天及核技术等领域,因此急需研究光电耦合器在辐照环境中的失效机理及抗辐照评估方法。辐照在光电耦合器件内部引入缺陷,而噪声与器件的内部缺陷密切相关。所以,借助光电耦合器的噪声理论来研究光电耦合器的辐照损伤理论是可行的。
本文系统地研究了晶体管输出型光电耦合器的辐照效应,损伤机理及其评估方法。针对晶体管输出型光电耦合器的结构组成,详细阐述了其噪声理论、辐照机理和辐照效应,建立了光电耦合器的辐照噪声测试系统。详细介绍了光电耦合器的电离总剂量辐照特性和中子注量辐照特性,选用60COγ源进行总剂量电离辐照,首次建立了总剂量辐照下的光电耦合器的电流传输比模型和噪声模型,在反应堆上进行中子注量辐照,研究了光电耦合器的中子辐照电效应和噪声效应,并分析了该中子辐照噪声的分形特性,这为光电耦合器的辐照研究提供了研究思路和数据积累,提出了辐照噪声表征参量,填补了国内外在此领域的空白。结合以上理论,半导体器件原理及光电耦合器的可靠性噪声评估方法,研究了光电耦合器抗辐照能力的噪声评估方法,得到了一些重要研究结果,这些研究结果为更深入地开展半导体器件辐照评估方法奠定了实验和理论基础。
As the rapid developments of advanced technologies of space technology, nuclear technology and nuclear weapons, an increasing number of optoelectronic devices are required to operate properly in irradiation environment. Irradiation introduces defects of oxide charges, interface state charges and internal displacements into the devices, causing a degradation of the electrical parameters and resulting in the devices with a semi-permanent or permanent ineffectiveness. Therefore, to ensure the devices work well in the radiation environment, it is necessary to make researches and diagnosis on their irradiation damage mechanism, damage degree and anti-radiation ability.Radiation-anneal techniques for devices of radiation environment are presently used.The more important thing is that this method will induce some new latent defects in the devices under test,let alone this method is expensive,time-waste and destructive.Under such conditions, a simple, quick and completely non-destructive technology for Radiation-anneal and anti-radiation evaluation is urgently required.
Optocouplers with advantages of small size, long life, non-contact, and strong anti-interference are widely used in aviation and aerospace fields. So,it’s urgent need to research the invalidation mechanism and the anti-radiation evaluation method of optocouplers in radiation environment.Defects are introduced in optocouplers by radiation and the defects are extraordinary correlation with noise.So,It’s feasible to study the radiation damage of optocouplers in virtue of noise theory of optocouplers.
In this paper, the systematic study of the irradiation effects, damage mechanism and evaluation method of optocouplers with transistor output is presented. For the composition of the optocouplers with transistor output, the noise theory, radiation mechanism and radiation effect are expounded, establishing an irradiation noise test system. And described in detail is the irradiation properties of both the total ionizing dose and neutron fluence. By choosing 60COγas the radiation sources to make the total ionizing dose, established a current transfer ratio model and noise model for optocouplers under the irradiation of total dose for the first time. The neutron fluence irradiation is carried out on reactor to study electric and noise effects of optocouplers, and an analysis of the fractal characteristics of the neutron irradiation noise is given, which provides research ideas and data for the irradiation study of optocouplers. A method of using irradiation noise to characterize the related parameters is proposed, which fills in this field at home and abroad.Combining with the above theory, working principles of semiconductor devices and the noise evaluation method for the reliability of optocouplers, noise assessment methods for evaluating the anti-radiation capacity are researched, obtaining important research results which establish the experimental and theoretical basis for the further development of irradiation evaluation methods for semiconductor devices.
引文
[1]张瑞君.光电耦合器—应用日广、市场渐宽.世界通用元器件,2001(3):29-31
[2]龙乐.光电耦合器的封装及其发展.电子与封装,2003,11,Vol3 No.6,16-20
[3]田浦延,布良基,陈蒲生,冯文修.光电耦合器的结构设计及封装特点.半导体技术, 2002.11,Vol27(11):55-66
[4]中国光学、光电子行业协会光电器件专业协会编.国内外半导体光电器件实用手册[M].北京:电子工业出版社,1992.
[5] Myers and David K, Space and Nuclear Environments and Their Effects on Semicondu- Ctors. Electronic Engineer, Sept., 1967
[6] Robert A. Reed, Christian Poivey, Paul W. Marshall,et al. Assessing the Impact of the Space Radiation Environment on Parametric Degradation and Single-Event Transients in Optocouplers.IEEE Transaction on Nuclear Science.VOL. 48, NO. 6, December 2001
[7] Radiation Immunity of Agilent Technologies Optocouplers, Application Note 1023,www.Sem iconductor.agilent.com data subject to change.copyright@1999 Agilent Technologies,Inc.5954-1003(11/99)
[8] Micropac industries, INC.Optoelectrinics Division Radiation Report
[9]宋钦歧,李德孚.电子学抗核加固基础.北京:原子能出版社. 1986
[10]陈盘训.半导体器件和集成电路的辐射效应.北京国防工业出版社,2005.6
[11]包宗明,王儒全等译.半导体器件的核辐射加固(译文集).北京.原子能出版社.1985.3
[12]曹建中.半导体材料中的辐射效应.北京,科学出版社,1993
[13]赖祖武,包宗明,宋钦歧等.抗辐射电子学----辐射效应及加固原理.北京国防工业出版社,1998.7
[14] W.J. Stapor and P.T. McDonald,Simple and practical optocoupler CTR degrandation presivtive model,Innovative Concepts IncorporatedMcLean VA 22102 http://www. innocon.com
[15] C.I. Merzbacher, W.J.Stapor, P.T.McDonaldb and B.G.Henson, optocoupler ionizat-ion differences of proton and 60COγradiation, http://www.innocon.com.
[16] K.A.LaBel,S.D.Kniffin,R.A.Reed,et al. A Compendium of Recent Optocoupler Radiation Test Data.IEEE Rad. Eff. Data workshop.pp.123-124,2000
[17] A.H.Johnston and B.G.Rax Proton Damage in Linear and Digital Optocouplers Presented at 1999 RADECS Conference; published in IEEE Trans. Nucl. Sci. 47(3), 675 (2000)
[18] T.F.Miyahira and A.H.Johnston, Trends in Optocoupler Radiation Degradation, IEEE Transaction on Nuclear Science, Vol. 49, No. 6, December 2002.2868
[19] A.H.Johnston,B.G.Rax,L.E.Selva and C.E.Barnes, Proton Degradation of Light-Emitting Diodes, IEEE Transactions on Nuclear Science,46(6), 1781 (1999)
[20] Jerry L. Gorelick, and Raymond Ladbury, Proton, Neutron, and Gamma Degradationof Optocouplers, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 51, NO. 6, DECEMBER 2004.3730
[21] Shaneyfelt M .R.,Schwank J.R.and Fleetwood D.M. Effects of irradiation temperature on MOS radiationr esponse. Nuclear Science, IEEE Transactions on.1998, 4 5 (3):1372-1378
[22] Boch J,Saigne F,Schrimpf R.D.and Fleetwood D.M. Effect of switching from high to low dose rate on linear bipolar technology radiation response. Nuclear Science ,IEEE Transactions on.2004,5 1(5):2 896-2902
[23] Gadlage M .J.,Schrimpf R .D.and Benedeto J .M. Modeling and verification of single event transients in deep submicron technologies.Reliability Physics Symposium Proceedings,IEEE International.2004,42(4):673- 674
[24] O Bryan and M artha Vetal.Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics[ J].I EEE Radiation Effects Data Workshop ,July 2000:106一122
[25] P C. Adell,R.D.Schrimpf, et al. Total-Dose and Single Event Effects in Switching DC/DC Power Converters ,IEEE Trans.On Nuclear Science,2002,49(6):3217-3221
[26] P.C.Adell,Total Dose and Single-Event Efects in DC/DC Converter Control Circuitry[J ],IEEE Trans .on Nuclear Science,2003,50(6):1867-1872
[27] Oldham,T.R; McLean, F.B. Total ionizing dose effects in MOS oxides and devices, Nuclear Science ,IEEE Transactions on,2003.50( 3),483一499.
[28] Yisong Dai,Jiangsheng Xu. The noise analysis and noise reliability in dicators of optoelectron coupled devices.Solid-State Electronics.2000,44(13):1495-1500
[29]包军林,庄奕琪,杜磊,马仲发,李伟华,李聪.光电耦合器1/f噪声和g-r噪声的机理研究.光子学报.2005,3 4(6):857-860
[30] Jiangsheng Xu,Derek Abbot and Yisong Dai. 1/f, g-r and Burst noise used as a screening threshold for reliability Estimation of optoelectron coupled devices.Miroelectronics Reliability.2000,40(2):171一178
[31] Yisong Dai, Jiesung Shi and Xinfa Zhang. The correlation of low frequency optical noise pectrum and electrical noise spectrum in a laser diode, with experimental results. Solid-State Electronics.1995,38(2):317-322
[32] Jevtic MM. Noise as a diagnostic and predication tool in reliability physics. Microelectronics Reliability, 1995, 35(3):1925-1938.
[33]包军林,庄奕琪,杜磊,吴勇,马仲发.光电祸合器g-r噪声模型.半导体学报,2005,3 4(6):857-860
[34] Doru Ursutiu, Brian K Jones. Low-frequency noise used as a lifetime test of LEDs .Semicond.Sci.Techno.1 996,24 (11):1 133-1136
[35] Amikam Nemirovsky. A revised model for carrier trapping-detrapping 1/f noise. Solid-State Electronics, 1997, 41(11): 1811-1818.
[36] S. R. Borrello, .Z. ?elik-Butler. A 1/f Noise Model Based on Fluctuating Defect States. Solid-State Electronics, 1993, 36(3): 407-411.
[37] Raj Jayaraman, Charles G. Sodini. 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon. IEEE Transactions on Electron Devices, 1989, 36(12):1773-1782.
[38] J. C. Chang, A. A. Abidi, and C. R. Viswananthan. Flicker noise in CMOS transistors from sub-threshold to strong inversion at various temperatures. IEEE Trans. Electron Devices, 1994, 41(10): 1965–1971.
[39] F N Hooge. The relation between 1/f noise and number of electrons. Physical B, 1990, 16(2):344-351.
[40]陈春霞,杜磊,何亮等.金属互联电迁移噪声的分形特性.物理学报,Vol.56.No.11,November,2007
[41]李应辉,陈春霞,蒋城等.光电耦合器辐照损伤的噪声检测.半导体光电. Vol .29(3) 332-334, 2008
[42] X.Y.Chen, A.Pedersen and O.G.Helleso. Electrical noise of laser diodes measured over a wide range of bias currents. Miroelectronics Reliability, 2000, 40(10): 1925-1928.
[43] Shi Jiawei, Jin Ensun and Ma Jing. An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers. Miroelectronics Reliability, 1994, 34(7): 1261-1264.
[44]徐建生,戴逸松.测量噪声功率谱作为筛选光电耦合器件的方法研究.光电子·激光, 1999,10(3):236-239.
[45] J.Vandamme.Noise as a Diagnostic Tool for Quality and Reliability of ElectronicDevices .IEEE Trans.on Electron Devices,1994,41( 11):2176-2187
[46]庄奕琪、孙青著.半导体器件中的噪声及其低噪声化技术.北京:国防工业出版社, 1993,1 81一19
[47] Hooge F N, 1/f noise is no surface effect. Phys.Lett A, 1969,29:139-140.
[48]尼曼(Neamen,D.A).半导体器件导论An Introduction to Semiconductor Devices(影印版).北京.清华大学出版社,2006.3.
[49]李应辉,陈春霞,蒋城等,辐照条件下光电耦合器的电流传输比模型.半导体光电. 2008, Vol .29(2) 158-161
[50] Bernie Rax et al. Total Dose and Proton Damage in Optocouplers, IEEE Trans. Nucl.Sci, NS-43, No. 6, 3167,December 1996.
[51] P.T.McDonald and W.J.Stapor.MC099 Optocoupler RLAT Measurements,ICI report dated June 20, 1997.
[52] S.Buchner, Sachs Freeman Associates, and J.D.Mann. NRL, private communication.One dataset was taken in August 1997 and the other was taken October 1997.
[53] Rose, Marion. Nuclear Hardening of Weapons Systems (Parts I, II, and III), DefenseElectronics, Sept., Oct., Nov., 1979.
[54] Grove, Andrew S. Physics and Technology of Semiconductor Devices, Wiley, 1967, P.143.
[55] Soda K.J, Barnes C.E, Kiehl R.A. The Effect of Gamma Irradiation on Optical Isolators, IEEE Transactions on Nuclear Science, Vol. NS-22, No. 6, Dec., 1975, P.2475.
[56] R.Mangeret,L.Bonora,T.Bouchet,et al.Radiation Characterization and Test Method-ology Study of Optocoupler Devices for Space Applications. Radiation and it’s effects on components and systems. 10-14 Sept.2001.166-171
[57] Germanicus,L.Dusseau,F.Saigné,S.Barde,R.Ecoffet,O.Mion,P.Calvel,J.Fesquet,and .Gasio. Analysis of the Proton Induced Permanent Degradation in an Optocoupler.IEEE Transaction on Nuclear Science,VOL.49,NO.3,June 2002.1421-1425
[58] H.Johnston and F.Miyahira,Hardness Assurance Methods for Radiation Degradation of ptocouplers, IEEE Transaction on nuclear science,Vol.52,No.6,December 2005.2649
[59]胡瑾,杜磊,庄奕琪等.光电耦合器电流传输比的噪声表征.半导体学报. Vol. 28(4) 597-603, 2007
[60]庄奕琪,孙青.半导体器件中的噪声及其低噪声化技术.北京:国防工业出版社,1993
[61] Neri B.Diligenti A and Bagnoli P E 1987 IEEE Trans.Electron.Dev.34.2317
[62]田浦延,陈蒲生.固体电子学研究与进展.Vol.25,No.3 Aug.,2005
[63]包军林,庄奕琪,杜磊,李伟华.基于虚拟仪器的电子器件低频噪声测试分析系统.仪器仪表学报.2004,3 :2 57^261
[64] A.H.Johnston.Radiation Damage of Electronic and Optoelectronic Devices in Space, Presented at the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application,Tsukuba, Japan, October 11-13, 2000
[65] H.Lischka,et al.Radiation Effect in Light Emitting Diodes, Laser Diodes,Photodi-odes and Optocouplers. RADECS93 Proceeding, P.226-231.
[66] M.Drdine. Proton Damage in Optocouplers. IEEE Radiation Effects Data Workshop, 1997:122-124.
[67] R.A.Reed, P.W.Marshall,A.H.Johnston,et al.Emerging Optocoupler Issues with Energetic Particle-Induced Transients and Permanent Radiation Degradation.IEEE Trans. Nucl. Sci., 1998,45(6):2833- 2841.
[68] R.Mangeret,et al.Radiation Characterization and Test Methodology Study of Optocouplers for Space Applications. Grenoble, France: RADECS Conference 2001, September, 2001.
[69] Kenneth A. LaBel, Paul W. Marshall, Cheryl J. Marshall,et al.Proton-Induced Transients in Optocouplers:In-Flight Anomalies, Ground Irradiation Test, Mitigation and Implications, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 44, NO. 6, DECEMBER 1997,1885-1892
[70] P.C.Adell,O.Mion,R.D.Schrimpf, C.Chatry,P.Calvel, and M.R.Melotte.Single Event Single vent Transient Propagation Through Digital Optocouplers, IEEE Transaction on nuclearscience,VOL.52,NO.4, August 2005,1136-1139
[71]陈炳若,李世清,黄启俊,伊德强.γ辐照对硅光电二极管光电流的影响[J].武汉大学学报.1995,41(3):357-362
[72]胡瑾,杜磊,庄奕琪等.发光二极管可靠性的噪声表征[J].物理学报,2006,55(3):1384-1 389
[73] B.G.Rax and C.I.Lee.Total dose and proton damage in optocoupler[J]. IEEE Trans.Nucl.Sci. 1996,43(6):3167
[74] Allan H. Johnston, Radiation Effects in Light-Emitting and Laser Diodes[J]. IEEE Transaction on Nuclear Science, 2003.50(3): 689
[75] Dai Yisong,X uJ iansheng.The noise analysis andnoiser eliability in dicators of optoelectron coupled devices[J].Solid-State Electron,2000,44(12):1495
[76] A.H.Johnston. The Effects of Space radiation on Optocoupler[J]. Radecs. 1998,87,
[77]庄奕琪,孙青.半导体器件中的噪声及其低噪声化技术[M].北京:国防工业出版社,1993
[78] Jaear R C and Brodersen A J.Low–frequency noise sources in bipolar junction transistors. IEEE Trans Devices 1970,ED-17(2): 128~134
[79]Hsu S T .Surface state related 1/f noise in p-n junctions.Solid-StateElectron,1970 ,31(6): 843-855
[80] H. Lischka. H. Henschel, W. Lennartz, and H. U. Schmidt, Radiation Sensitivity of Light Emitting bodes (LED), Laser Diodes (LD) and Photodiodes (PD), [EEE Transactions on Nuclear Science , June 1992 .39(3). 423
[81] C. E. Barnes and J. Wiczer. Radiation Effects in Optoelectronic Devices, Sandia Report SAND-0771. Sandia National Laboratories, May 1984
[82] R. F. Carson and W. W. Chow, Neutron Effects in High-Power GaAs Laser Diodes, IEEE Transactions on Nuclear Science December 1989. 36( 6) 2076
[83] C. Barnes, D. Heflinger, and R. Reel, Effect of neutron irradiation on laser diode operties", SPIE Fibre Optic Reliability: Benign and Adverse Environments 111, 1989.1174.33,
[84] G. C. Osboum, L. R. Dawson, and J. J. Wiczer, "Computer Modeling and Radiation Testing of AlGaAs Photodiode Structures", EEE Transactions on Nuclear Science1981.28(6). 4342
[85] C. E. Barnes. "Development of Efficient, Radiation-Insensitive GaAs:Zn LEDs", IEEE Transactions on Nuclear Science December 1977. 36 (6), 2309
[86]R. A. Polimadei, S. Share, and A. S. Eptein, "Performance of Gal-xAlxAs Light Emitting Diodes in Radiation Environments', IEEE Transactions on Nuclcar Science NS-21, pp. 96-102, December 1974
[87] C. E. Barnes, Radiation effects in 1.06 pm InGaAs LEDs and Si photodiodes, J. Appl. Phys. 50(8), August 1979
[88] H. Lischka, H. Henschel. 0. Kahn, W. Lennartz, and H. U. Schmidt, Radiation Damage in Optoelectronic Devices. Internal Report of the Fraunhofer-INT. to be published
[89] R. Korde, A. Ojha, R. Braasch, and T. C. English, The Effect of Neutron Irradiation on Silicon Photodiodes, IEEE Transactions on Nuclear Science 1978. 36(6). 2169
[90] G. C. Osbourn, L. R. Dawn, and I. J. Wiczcr, Gmputcr Modeling and Radiation Testing of IGIA. Photodiode Struchtrcs, IEEE Transactions on Nuclear Science December 1981. 28(6) , 4342
[91]H. Lirbka, H. Henxbel. 0. Kiibn, W. Lconsrtz, and H. U. Schmidt, 'Radiation Damage in Optoelectrnic Devices', Internal Report of the Fraunhofcr-INT, Nr. 5/91, 1991
[92]EINJEDEC STANDARD, Test Method A113-B, Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing, JESD22-A113-B, March 1999.
[93]Christian Boit, Photoemission Microscoov-Advanced! Theorv of overation in Microelectronic Failure Analvsis,ASM International (1999), 213
[94]A. D. Trigg,A Combined InfraredNisible Photoemission Microscope, Proc. 25& International Symposium on Testing and Failure Analysis (ISTFA), Santa Clara, CA, Nov. 1999, 457
[95] EINJEDEC STANDARD, Test Method AllO-B, Highly-Accelerated Stress Temperature and Humidity Stress Test (HAST), JESD22-AI 10-B, February 1999.
[96]V. Bondarenko, K. Petters, R. Krause-Rehberg, J. Gehauer, H. S. Leipner, Study of acancy-type defects after Cu diffusion in GaAs, Physica B 308-310 2001. 792
[97]S. M. Sze, Phvsics of Semiconductor Devices, 2nd ed.Wiley (New York, 1981), pp. 402-407.
[98]F. Levfnberger, l/f noise in gate-controlled planar silicon
[99]E. R. Chenette, Low noise amplifiers, Solid State Design, Electronics Letters, June 1968 . 4, 280
[100]K. F. Knott,1 /f voltage noise in silicon planar bipolar transistors, Electronics Letters,Dece-mber 1968.vol. 4, 555-556,.
[101] J. F. Gibbons, Low-frequency noise figure and its applicatisln to the measurement of certain transisto parameters, IA’ETrans. Electron Devices, vol. ED-9, pp. 308-315, May 1962.
[2]龙乐.光电耦合器的封装及其发展.电子与封装,2003,11,Vol3 No.6,16-20
[3]田浦延,布良基,陈蒲生,冯文修.光电耦合器的结构设计及封装特点.半导体技术, 2002.11,Vol27(11):55-66
[4]中国光学、光电子行业协会光电器件专业协会编.国内外半导体光电器件实用手册[M].北京:电子工业出版社,1992.
[5] Myers and David K, Space and Nuclear Environments and Their Effects on Semicondu- Ctors. Electronic Engineer, Sept., 1967
[6] Robert A. Reed, Christian Poivey, Paul W. Marshall,et al. Assessing the Impact of the Space Radiation Environment on Parametric Degradation and Single-Event Transients in Optocouplers.IEEE Transaction on Nuclear Science.VOL. 48, NO. 6, December 2001
[7] Radiation Immunity of Agilent Technologies Optocouplers, Application Note 1023,www.Sem iconductor.agilent.com data subject to change.copyright@1999 Agilent Technologies,Inc.5954-1003(11/99)
[8] Micropac industries, INC.Optoelectrinics Division Radiation Report
[9]宋钦歧,李德孚.电子学抗核加固基础.北京:原子能出版社. 1986
[10]陈盘训.半导体器件和集成电路的辐射效应.北京国防工业出版社,2005.6
[11]包宗明,王儒全等译.半导体器件的核辐射加固(译文集).北京.原子能出版社.1985.3
[12]曹建中.半导体材料中的辐射效应.北京,科学出版社,1993
[13]赖祖武,包宗明,宋钦歧等.抗辐射电子学----辐射效应及加固原理.北京国防工业出版社,1998.7
[14] W.J. Stapor and P.T. McDonald,Simple and practical optocoupler CTR degrandation presivtive model,Innovative Concepts IncorporatedMcLean VA 22102 http://www. innocon.com
[15] C.I. Merzbacher, W.J.Stapor, P.T.McDonaldb and B.G.Henson, optocoupler ionizat-ion differences of proton and 60COγradiation, http://www.innocon.com.
[16] K.A.LaBel,S.D.Kniffin,R.A.Reed,et al. A Compendium of Recent Optocoupler Radiation Test Data.IEEE Rad. Eff. Data workshop.pp.123-124,2000
[17] A.H.Johnston and B.G.Rax Proton Damage in Linear and Digital Optocouplers Presented at 1999 RADECS Conference; published in IEEE Trans. Nucl. Sci. 47(3), 675 (2000)
[18] T.F.Miyahira and A.H.Johnston, Trends in Optocoupler Radiation Degradation, IEEE Transaction on Nuclear Science, Vol. 49, No. 6, December 2002.2868
[19] A.H.Johnston,B.G.Rax,L.E.Selva and C.E.Barnes, Proton Degradation of Light-Emitting Diodes, IEEE Transactions on Nuclear Science,46(6), 1781 (1999)
[20] Jerry L. Gorelick, and Raymond Ladbury, Proton, Neutron, and Gamma Degradationof Optocouplers, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 51, NO. 6, DECEMBER 2004.3730
[21] Shaneyfelt M .R.,Schwank J.R.and Fleetwood D.M. Effects of irradiation temperature on MOS radiationr esponse. Nuclear Science, IEEE Transactions on.1998, 4 5 (3):1372-1378
[22] Boch J,Saigne F,Schrimpf R.D.and Fleetwood D.M. Effect of switching from high to low dose rate on linear bipolar technology radiation response. Nuclear Science ,IEEE Transactions on.2004,5 1(5):2 896-2902
[23] Gadlage M .J.,Schrimpf R .D.and Benedeto J .M. Modeling and verification of single event transients in deep submicron technologies.Reliability Physics Symposium Proceedings,IEEE International.2004,42(4):673- 674
[24] O Bryan and M artha Vetal.Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics[ J].I EEE Radiation Effects Data Workshop ,July 2000:106一122
[25] P C. Adell,R.D.Schrimpf, et al. Total-Dose and Single Event Effects in Switching DC/DC Power Converters ,IEEE Trans.On Nuclear Science,2002,49(6):3217-3221
[26] P.C.Adell,Total Dose and Single-Event Efects in DC/DC Converter Control Circuitry[J ],IEEE Trans .on Nuclear Science,2003,50(6):1867-1872
[27] Oldham,T.R; McLean, F.B. Total ionizing dose effects in MOS oxides and devices, Nuclear Science ,IEEE Transactions on,2003.50( 3),483一499.
[28] Yisong Dai,Jiangsheng Xu. The noise analysis and noise reliability in dicators of optoelectron coupled devices.Solid-State Electronics.2000,44(13):1495-1500
[29]包军林,庄奕琪,杜磊,马仲发,李伟华,李聪.光电耦合器1/f噪声和g-r噪声的机理研究.光子学报.2005,3 4(6):857-860
[30] Jiangsheng Xu,Derek Abbot and Yisong Dai. 1/f, g-r and Burst noise used as a screening threshold for reliability Estimation of optoelectron coupled devices.Miroelectronics Reliability.2000,40(2):171一178
[31] Yisong Dai, Jiesung Shi and Xinfa Zhang. The correlation of low frequency optical noise pectrum and electrical noise spectrum in a laser diode, with experimental results. Solid-State Electronics.1995,38(2):317-322
[32] Jevtic MM. Noise as a diagnostic and predication tool in reliability physics. Microelectronics Reliability, 1995, 35(3):1925-1938.
[33]包军林,庄奕琪,杜磊,吴勇,马仲发.光电祸合器g-r噪声模型.半导体学报,2005,3 4(6):857-860
[34] Doru Ursutiu, Brian K Jones. Low-frequency noise used as a lifetime test of LEDs .Semicond.Sci.Techno.1 996,24 (11):1 133-1136
[35] Amikam Nemirovsky. A revised model for carrier trapping-detrapping 1/f noise. Solid-State Electronics, 1997, 41(11): 1811-1818.
[36] S. R. Borrello, .Z. ?elik-Butler. A 1/f Noise Model Based on Fluctuating Defect States. Solid-State Electronics, 1993, 36(3): 407-411.
[37] Raj Jayaraman, Charles G. Sodini. 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon. IEEE Transactions on Electron Devices, 1989, 36(12):1773-1782.
[38] J. C. Chang, A. A. Abidi, and C. R. Viswananthan. Flicker noise in CMOS transistors from sub-threshold to strong inversion at various temperatures. IEEE Trans. Electron Devices, 1994, 41(10): 1965–1971.
[39] F N Hooge. The relation between 1/f noise and number of electrons. Physical B, 1990, 16(2):344-351.
[40]陈春霞,杜磊,何亮等.金属互联电迁移噪声的分形特性.物理学报,Vol.56.No.11,November,2007
[41]李应辉,陈春霞,蒋城等.光电耦合器辐照损伤的噪声检测.半导体光电. Vol .29(3) 332-334, 2008
[42] X.Y.Chen, A.Pedersen and O.G.Helleso. Electrical noise of laser diodes measured over a wide range of bias currents. Miroelectronics Reliability, 2000, 40(10): 1925-1928.
[43] Shi Jiawei, Jin Ensun and Ma Jing. An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers. Miroelectronics Reliability, 1994, 34(7): 1261-1264.
[44]徐建生,戴逸松.测量噪声功率谱作为筛选光电耦合器件的方法研究.光电子·激光, 1999,10(3):236-239.
[45] J.Vandamme.Noise as a Diagnostic Tool for Quality and Reliability of ElectronicDevices .IEEE Trans.on Electron Devices,1994,41( 11):2176-2187
[46]庄奕琪、孙青著.半导体器件中的噪声及其低噪声化技术.北京:国防工业出版社, 1993,1 81一19
[47] Hooge F N, 1/f noise is no surface effect. Phys.Lett A, 1969,29:139-140.
[48]尼曼(Neamen,D.A).半导体器件导论An Introduction to Semiconductor Devices(影印版).北京.清华大学出版社,2006.3.
[49]李应辉,陈春霞,蒋城等,辐照条件下光电耦合器的电流传输比模型.半导体光电. 2008, Vol .29(2) 158-161
[50] Bernie Rax et al. Total Dose and Proton Damage in Optocouplers, IEEE Trans. Nucl.Sci, NS-43, No. 6, 3167,December 1996.
[51] P.T.McDonald and W.J.Stapor.MC099 Optocoupler RLAT Measurements,ICI report dated June 20, 1997.
[52] S.Buchner, Sachs Freeman Associates, and J.D.Mann. NRL, private communication.One dataset was taken in August 1997 and the other was taken October 1997.
[53] Rose, Marion. Nuclear Hardening of Weapons Systems (Parts I, II, and III), DefenseElectronics, Sept., Oct., Nov., 1979.
[54] Grove, Andrew S. Physics and Technology of Semiconductor Devices, Wiley, 1967, P.143.
[55] Soda K.J, Barnes C.E, Kiehl R.A. The Effect of Gamma Irradiation on Optical Isolators, IEEE Transactions on Nuclear Science, Vol. NS-22, No. 6, Dec., 1975, P.2475.
[56] R.Mangeret,L.Bonora,T.Bouchet,et al.Radiation Characterization and Test Method-ology Study of Optocoupler Devices for Space Applications. Radiation and it’s effects on components and systems. 10-14 Sept.2001.166-171
[57] Germanicus,L.Dusseau,F.Saigné,S.Barde,R.Ecoffet,O.Mion,P.Calvel,J.Fesquet,and .Gasio. Analysis of the Proton Induced Permanent Degradation in an Optocoupler.IEEE Transaction on Nuclear Science,VOL.49,NO.3,June 2002.1421-1425
[58] H.Johnston and F.Miyahira,Hardness Assurance Methods for Radiation Degradation of ptocouplers, IEEE Transaction on nuclear science,Vol.52,No.6,December 2005.2649
[59]胡瑾,杜磊,庄奕琪等.光电耦合器电流传输比的噪声表征.半导体学报. Vol. 28(4) 597-603, 2007
[60]庄奕琪,孙青.半导体器件中的噪声及其低噪声化技术.北京:国防工业出版社,1993
[61] Neri B.Diligenti A and Bagnoli P E 1987 IEEE Trans.Electron.Dev.34.2317
[62]田浦延,陈蒲生.固体电子学研究与进展.Vol.25,No.3 Aug.,2005
[63]包军林,庄奕琪,杜磊,李伟华.基于虚拟仪器的电子器件低频噪声测试分析系统.仪器仪表学报.2004,3 :2 57^261
[64] A.H.Johnston.Radiation Damage of Electronic and Optoelectronic Devices in Space, Presented at the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application,Tsukuba, Japan, October 11-13, 2000
[65] H.Lischka,et al.Radiation Effect in Light Emitting Diodes, Laser Diodes,Photodi-odes and Optocouplers. RADECS93 Proceeding, P.226-231.
[66] M.Drdine. Proton Damage in Optocouplers. IEEE Radiation Effects Data Workshop, 1997:122-124.
[67] R.A.Reed, P.W.Marshall,A.H.Johnston,et al.Emerging Optocoupler Issues with Energetic Particle-Induced Transients and Permanent Radiation Degradation.IEEE Trans. Nucl. Sci., 1998,45(6):2833- 2841.
[68] R.Mangeret,et al.Radiation Characterization and Test Methodology Study of Optocouplers for Space Applications. Grenoble, France: RADECS Conference 2001, September, 2001.
[69] Kenneth A. LaBel, Paul W. Marshall, Cheryl J. Marshall,et al.Proton-Induced Transients in Optocouplers:In-Flight Anomalies, Ground Irradiation Test, Mitigation and Implications, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 44, NO. 6, DECEMBER 1997,1885-1892
[70] P.C.Adell,O.Mion,R.D.Schrimpf, C.Chatry,P.Calvel, and M.R.Melotte.Single Event Single vent Transient Propagation Through Digital Optocouplers, IEEE Transaction on nuclearscience,VOL.52,NO.4, August 2005,1136-1139
[71]陈炳若,李世清,黄启俊,伊德强.γ辐照对硅光电二极管光电流的影响[J].武汉大学学报.1995,41(3):357-362
[72]胡瑾,杜磊,庄奕琪等.发光二极管可靠性的噪声表征[J].物理学报,2006,55(3):1384-1 389
[73] B.G.Rax and C.I.Lee.Total dose and proton damage in optocoupler[J]. IEEE Trans.Nucl.Sci. 1996,43(6):3167
[74] Allan H. Johnston, Radiation Effects in Light-Emitting and Laser Diodes[J]. IEEE Transaction on Nuclear Science, 2003.50(3): 689
[75] Dai Yisong,X uJ iansheng.The noise analysis andnoiser eliability in dicators of optoelectron coupled devices[J].Solid-State Electron,2000,44(12):1495
[76] A.H.Johnston. The Effects of Space radiation on Optocoupler[J]. Radecs. 1998,87,
[77]庄奕琪,孙青.半导体器件中的噪声及其低噪声化技术[M].北京:国防工业出版社,1993
[78] Jaear R C and Brodersen A J.Low–frequency noise sources in bipolar junction transistors. IEEE Trans Devices 1970,ED-17(2): 128~134
[79]Hsu S T .Surface state related 1/f noise in p-n junctions.Solid-StateElectron,1970 ,31(6): 843-855
[80] H. Lischka. H. Henschel, W. Lennartz, and H. U. Schmidt, Radiation Sensitivity of Light Emitting bodes (LED), Laser Diodes (LD) and Photodiodes (PD), [EEE Transactions on Nuclear Science , June 1992 .39(3). 423
[81] C. E. Barnes and J. Wiczer. Radiation Effects in Optoelectronic Devices, Sandia Report SAND-0771. Sandia National Laboratories, May 1984
[82] R. F. Carson and W. W. Chow, Neutron Effects in High-Power GaAs Laser Diodes, IEEE Transactions on Nuclear Science December 1989. 36( 6) 2076
[83] C. Barnes, D. Heflinger, and R. Reel, Effect of neutron irradiation on laser diode operties", SPIE Fibre Optic Reliability: Benign and Adverse Environments 111, 1989.1174.33,
[84] G. C. Osboum, L. R. Dawson, and J. J. Wiczer, "Computer Modeling and Radiation Testing of AlGaAs Photodiode Structures", EEE Transactions on Nuclear Science1981.28(6). 4342
[85] C. E. Barnes. "Development of Efficient, Radiation-Insensitive GaAs:Zn LEDs", IEEE Transactions on Nuclear Science December 1977. 36 (6), 2309
[86]R. A. Polimadei, S. Share, and A. S. Eptein, "Performance of Gal-xAlxAs Light Emitting Diodes in Radiation Environments', IEEE Transactions on Nuclcar Science NS-21, pp. 96-102, December 1974
[87] C. E. Barnes, Radiation effects in 1.06 pm InGaAs LEDs and Si photodiodes, J. Appl. Phys. 50(8), August 1979
[88] H. Lischka, H. Henschel. 0. Kahn, W. Lennartz, and H. U. Schmidt, Radiation Damage in Optoelectronic Devices. Internal Report of the Fraunhofer-INT. to be published
[89] R. Korde, A. Ojha, R. Braasch, and T. C. English, The Effect of Neutron Irradiation on Silicon Photodiodes, IEEE Transactions on Nuclear Science 1978. 36(6). 2169
[90] G. C. Osbourn, L. R. Dawn, and I. J. Wiczcr, Gmputcr Modeling and Radiation Testing of IGIA. Photodiode Struchtrcs, IEEE Transactions on Nuclear Science December 1981. 28(6) , 4342
[91]H. Lirbka, H. Henxbel. 0. Kiibn, W. Lconsrtz, and H. U. Schmidt, 'Radiation Damage in Optoelectrnic Devices', Internal Report of the Fraunhofcr-INT, Nr. 5/91, 1991
[92]EINJEDEC STANDARD, Test Method A113-B, Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing, JESD22-A113-B, March 1999.
[93]Christian Boit, Photoemission Microscoov-Advanced! Theorv of overation in Microelectronic Failure Analvsis,ASM International (1999), 213
[94]A. D. Trigg,A Combined InfraredNisible Photoemission Microscope, Proc. 25& International Symposium on Testing and Failure Analysis (ISTFA), Santa Clara, CA, Nov. 1999, 457
[95] EINJEDEC STANDARD, Test Method AllO-B, Highly-Accelerated Stress Temperature and Humidity Stress Test (HAST), JESD22-AI 10-B, February 1999.
[96]V. Bondarenko, K. Petters, R. Krause-Rehberg, J. Gehauer, H. S. Leipner, Study of acancy-type defects after Cu diffusion in GaAs, Physica B 308-310 2001. 792
[97]S. M. Sze, Phvsics of Semiconductor Devices, 2nd ed.Wiley (New York, 1981), pp. 402-407.
[98]F. Levfnberger, l/f noise in gate-controlled planar silicon
[99]E. R. Chenette, Low noise amplifiers, Solid State Design, Electronics Letters, June 1968 . 4, 280
[100]K. F. Knott,1 /f voltage noise in silicon planar bipolar transistors, Electronics Letters,Dece-mber 1968.vol. 4, 555-556,.
[101] J. F. Gibbons, Low-frequency noise figure and its applicatisln to the measurement of certain transisto parameters, IA’ETrans. Electron Devices, vol. ED-9, pp. 308-315, May 1962.
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |