铟锌氧化物薄膜晶体管和高功函数TCO薄膜的研究
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摘要
有源矩阵有机发光二极管(Active Matrix Organic Light Emitting Diode, AMOLED)显示具有轻薄、反应速度快、对比度高、视角广等特点,被认为是下一代显示技术。其使用的薄膜晶体管(TFT)主要有两种,一种是非晶硅(a-Si)TFT,一种是多晶硅(p-Si)TFT。由于a-Si TFT的载流子迁移率小于1cm2/V.s,不能适应快速、大面积和更高清晰度显示的需求；a-Si薄膜是不透明的,像素开口率达不到100%,为了获得足够的亮度,就需要增加光源强度,从而增加功率消耗；a-Si材料在可见光范围内是光敏材料,在可见光照射下将使TFT性能恶化。低温多晶硅(LTPS)TFT凭借其较高的载流子迁移率具有反应速度快、亮度高、清晰度好等优点,是一种继a-Si TFT的主流技术。但是,p-Si TFT技术同时具有均匀性差、工艺复杂、设备昂贵、成本高等问题；其工艺温度对有机基板而言非常之高,不能适应柔性显示的需求；而且LTPS-TFT也不透明,同样存在光敏性问题。
OLED的工作原理基本上可以分为载流子的注入、载流子的传输和载流子复合及辐射衰减三个过程。载流子注入是指载流子通过电极/有机层界面从电极进入有机层的过程。该过程的难易程度对器件的工作电压、效率和寿命有直接的影响。选择合适的电极材料并对电极进行修饰是提高载流子注入和实现注入平衡的重要途径。如果仔细考察一下OLED的发展历史就会发现,OLED效率和稳定性提高的过程在某种意义上说也是电极改善的过程。高功函数阳极可以降低阳极和空穴传输层之间的势垒,改善空穴的注入效果,进而改善器件的性能。
针对上述课题,本课题开展了铟锌氧化物半导体TFT以及高功函数透明导电氧化物(TCO)薄膜的研究。透明氧化物半导体(TOS)如In2O3和ZnO的载流子迁移率相对较高,工艺温度较低,在均匀性、成本和适用基板等方面也具有优越性。因此如果在TFTLCD或AMOLED中采用透明氧化物半导体TFT替代a-SiTFT或p-Si TFT作为像素开关,将大大提高有源矩阵的开口率,从而提高亮度,降低功耗；因为制备温度较低甚至是室温,所以氧化物TFT又适用于柔性显示。与采用空穴注入缓冲材料如酞菁铜(CuPc)等技术不同,高功函数TCO薄膜的研制仅需在制备TCO薄膜的工艺中增加一个靶材,与现有的OLED生产工艺的相容性好,方法简单,成本低廉,具有产业化的前景,也有将此技术移植到ITO的制备工艺中的潜能,能够为大规模使用高功函数TCO的技术奠定基础。论文开展的主要研究工作和取得的成果如下：
采用直流反应磁控溅射InZn合金靶,在玻璃衬底上制备了非晶透明铟锌氧化物(a-IZO)半导体薄膜。研究了铟锌含量比和氧分量等参数对a-IZO半导体薄膜的电学和光学性能的影响。研究结果表明,通过调节制备过程中的氧分压,在保证可见光平均透射率大于80%的前提下,实现了a-IZO薄膜的电阻率可在10-3ohm-cm到106ohm-cm量级范围内的调制,而且所制备的a-IZO薄膜具有良好的表面平整性,表面方均根粗糙度小于1nm。这对探索全透明TFT器件的沟道层和电极材料具有重要意义。
论文研究了顶栅和底栅结构的IZO-TFT。其中,以磁控溅射法室温制备a-IZO半导体沟道层,以脉冲等离子体沉积(PPD)技术制备SiO2介质层薄膜。顶栅结构氧化硅介质层IZO-TFT器件的阈值电压和迁移率分别为-2.4V和0.25 cm2V-1s-1；底栅结构氧化硅介质层IZO-TFT器件的阈值电压和迁移率分别为0.94 V和5.2cm2 V-1s-1,器件的开关比约为104。实验证实了PPD制备的SiO2介质层构成的TFT,也能显示良好的器件性能。以直流磁控溅射法制备的Ta2O5作为介质层,制备了顶栅结构氧化钽介质层IZO-TFT器件,器件的阈值电压和迁移率分别为0.22 V和1.1 cm2V-1s-1。
提出了氧化物半导体沟道层和有机介质层研制TFT的思路。采用提拉和旋涂方法低温制备了绝缘性和透明性良好的聚乙烯吡咯烷酮有机介质层。以此有机介质层和a-IZO沟道层结合成功制备了高性能无机-有机复合结构的IZO-TFT,器件迁移率、阈值电压和开关比分别为7.8 cm2V-1s-1、-4.8 v和3.9×105。研究表明,氧分压比较高的条件下制备的IZO薄膜,其载流子迁移率比较低,以它为沟道层制备的TFT器件的迁移率也比较低。
采用旋涂法室温制备聚四乙烯苯酚(PVP)有机介质层,其可见光平均透射率也大于85%。采用溅射法室温制备表面平整的a-IZO半导体薄膜。以a-IZO作为沟道层、PVP作为介质层,室温制备了顶栅结构的无机有机混合型TFT,测试结果表明该类型的TFT具有饱和特性,且显示耗尽工作模式。TFT的阈值电压为-1.5V,迁移率为3.3 cm2V-1s-1,开关比为105。聚四乙烯苯酚有机介质层旋涂后,进行低温烘烤处理,烘烤处理后,薄膜晶体管的迁移率、阈值电压和开关比分别为3.8V、25.4 cm2V-1s-1和>106。器件的性能得到了改善,这是由于烘烤有利于去除有机层中溶剂的残余成分和改善有机层与沟道层之间的界面状态。实验结果揭示了该种TFT的良好性能和应用前景。
论文在采用直流磁控溅射法研制了具有优良光学和电学性能的掺钨氧化铟(IWO)透明导电氧化物薄膜的基础上,研究了退火处理工艺对IWO薄膜光学和电学性能的影响。实验发现IWO薄膜的光学和电学性能对氧分压非常敏感,退火处理有助于改善IWO薄膜的电阻率,获得了最小电阻率为2.2×10-4ohm·cm,载流子迁移率高达63.5 cm2V-1s-1,可见光范围平均透射率(含基片)83.2%的光学和电学性能优良的IWO薄膜。
在IWO薄膜研究工作的基础上,探索性地开展了铂钨共掺高功函数薄膜In2O3：Pt,W的研究。在IWO薄膜之上,研制一层很薄的铂钨共掺氧化铟薄膜,通过改变掺铂含量和铂钨共掺氧化铟薄膜的厚度,实现了既保持透明性,有能有效调制功函数的In2O3：Pt,W透明导电氧化物薄膜。利用XPS和AFM等分析表征In2O3：Pt,W薄膜的化学价态以及表面形貌。In203：Pt,W薄膜的表面方均根粗糙度小于7nm。采用UPS表征样品的表面功函数。实验结果表明,In2O3：Pt,W薄膜中Pt含量为6.7 at.%,薄膜厚度为10nm时,In2O3：Pt,W薄膜的功函数由原来的IWO薄膜的4.6 eV提高到了5.5 eV,这时薄膜的电阻率为5.7×10-4ohm-cm,可见光范围的平均透射率为82.7%,证实了高功函数元素可以有效提高透明导电氧化物薄膜的功函数,为研制高功函数TCO薄膜提供了有价值的思路。
在高功函数In2O3：Pt,W研究的基础上,以IWO/In2O3：Pt,W薄膜为阳极,研制了IWO/In203：Pt,W/NPB/Alq3／LiF/Al结构的OLED器件。研究结果表明,当该器件的工作电压为14v时,电流密度和发光亮度分别达到1600mA/cm2和2.5×104cd/m2。而采用ITO薄膜为阳极,以同样结构和同样工艺条件制备的OLED器件,在相同的工作电压条件下,其电流密度和发光亮度仅为950mA/cm2和7.2x103cd/m2,证实了高功函数阳极能有效降低OLED器件的工作电压。
Active Matrix Organic Light Emitting Diode (AMOLED) displays have been considered as the next generation displays technologies due to its advantages such as much thinner and lighter weight, quick response, high contrast ratio, wide viewing angle and low power consumption. Currently, amorphous silicon(a-Si) TFT and polycrystalline silicon(p-Si) TFT are two main technologies to determine which pixels get turned on to form an picture. Usually, the field effect mobility for a-Si TFT is less than 1 cm2/V·s and can not be used to the fast, large-area and high definition display. Besides, a-Si thin film is opaque and light-sensitive, which results in the decrease of aperture ratio and requires the black matrix. Therefore, power consumption will be raised for the increase of light intensity so as to obtain enough brightness. Low-temperature polycrystalline silicon (LTPS) TFT technology is also attractive for the high field effect mobility and demonstrates advantages like fast response, high brightness and high definition. Nevertheless, LTPS TFT faces problems, such as ununiformity, complicated process and high cost. Moreover, it is not transparent and the process temperature is still high for organic substrates, thus unsuitable for flexible displays.
The main work principle for OLED can be defined as three processes:carrier injection, carrier transport, recombination and radiation degradation. The carrier injection can be explained that the carrier enters the organic layer through the interface between the electrode and the organic layer. The control of this process has direct effects on work voltage, efficiency and lifetime of the device. Thus, it is rather important to choose appropriate electrode material and make certain modification for improving the carrier injection and balancing the process. In fact, it can be referred from the development of OLED that the improvement of OLED efficiency and stability attributes much to the improvement of electrode. The high work function of the anode helps to reduce the potential barrier between the anode and hole transport layer (HTL), with better hole injection and OLED performance.
As to above issues, the investigations of indium zinc oxide (IZO) semiconductor thin films and transparent conductive oxide (TCO) thin films with high work function were carried out. Transparent oxide semiconductors (TOS), such as In2O3 and ZnO, have both high carrier mobility and high transparency in the visible region. Low temperature process and uniformity are also their advantages. The substitution of the TFT with TOS for silicon-based TFT in TFT LCD or AMOLED may improve the pixel aperture ratio and brings higher brightness with lower power consumption. Such TFT can be prepared at room temperature, implying the potential application in flexible displays. Compared with the introduction of buffer materials for hole injection, CuPc for an instance, the fabrication of TCO thin films with high work function needs only an additional target and is compatible with the current OLED production, meeting industry concerns. Main research work and achievements are concluded as follows.
The transparent amorphous In-Zn-O (a-IZO) semiconductor thin films have been prepared on glass substrates using direct current reactive magnetron sputtering with In/Zn alloy targets. The influence of deposition parameters such as In/Zn ratio and oxygen partial pressure on electrical and optical properties of a-IZO thin films have been investigated in detail. The result shows that by adjusting oxygen partial pressure during the deposition, the resisitivity of a-IZO thin film can be changed from 10-3 to 106 ohm-cm with the transmittance of over 80% in the visible light region. Moreover, the prepared a-IZO thin films have smooth surfaces with the root mean square roughness less than 1 nm.
Amorphous IZO-based TFTs with both top-gate structure and bottom-gate structure are prepared. The a-IZO channel layer was deposited by dc reactive magnetron sputtering at room temperature. SiO2 dielectric layer was prepared by pulsed plasma deposition (PPD) method. The top-gate IZO-TFT demonstrates the threshold voltage of -2.4 V and mobility of 0.25 cm2 V-1s-1 and the corresponding values are 0.94 V and 5.2 cm2 V-1s-1 for bottom-gate IZO-TFT with the on-off ratio-104. The top-gate IZO-TFT using TaaO5 dielectric layer prepared by dc reactive magnetron sputtering shows the threshold voltage of 0.22 V and mobility of 1.1 cm2 V-1s-1.
The thought of preparing TFT with oxide semiconductor channel layer and organic dielectric layer was proposed. The polyvinyl pyrrolidone dielectric layer was prepared at low temperature with good transparency and insulation by dip coating and spin coating. The hybrid IZO-TFT with inorganic channel layer and organic dielectric layer has been successfully prepared. The mobility, threshold voltage and on-off ratio of the device are 7.8 cm2V-1s-1、-4.8 V and 3.9 X 105, respectively. It is also found that IZO thin film prepared at high oxygen partial pressure shows lower carrier mobility and the TFT device with it as the channel displays lower field effect mobility accordingly.
Poly-4-vinylphenol was also used as the dielectric layer and prepared at room temperature by spin coating with the transmittance over 85% in the visible region. The top-gate IZO TFT with poly-4-vinylphenol dielectric layer works in the depletion mode. The threshold voltage, mobility and on-off ratio of the device are-1.5 V,3.3 cm2V-1s-1 and 105, respectively. When the organic layer was properly cured, the mobility of the TFT is remarkably enhanced to 25.4 cm2V-1s-1 with the threshold voltage of 3.8 V. The device performance are improved because the baking helps to make the organic layer more compact, remove the residual component of the solvent, and better the interface between the dielectric layer and the channel layer.
Transparent conductive tungsten-doped indium oxide (IWO) thin films with low resistivity and high transparency in the visible region are deposited. The experimental parameters are optimized. For example, the oxygen partial pressure significantly influences performance of IWO films. Further, the effects of post-annealing on the electrical and optical properties of IWO films are studied. It is found that proper post-annealing can reduce thin film resistivity and IWO film exhibits the minimum resistivity of 2.2×10-4Ω·cm. The carrier mobility reaches 63.5 cm2 V-1s-1 and the transmission is 83.2% in visible region.
Platinum and tungsten codoped indium oxide (In2O3:Pt,W) thin layers with high work function were then prepared and studied in detail. On IWO layer, In2O3:Pt,W film of a few nanometers was deposited. The work function can be modulated with still high transparency in the visible region by adjusting the platinum content and the thickness of In2O3:Pt,W thin film. The chemical valence of elements and the morphology are characterized by X-ray photoelectron spectroscopy (XPS) and Atomic Force Microscope (AFM), respectively. The root mean square roughness of In2O3:Pt,W thin film is less than 7nm. The work function of thin films are characterized using Ultraviolet Photoemission Spectroscopy (UPS). It was confirmed that the work functions 3φof IWO and IWO/In2O3:Pt,W thin films are 4.7 and 5.5 eV, respectively. The resistivity of IWO/In2O3:Pt,W double layers film reaches 5.7×10-4 ohm-cm and the average visible light transmission of 82.7% was obtained. It is confirmed that the high work function elements is effective for the improvement of TCO thin film work function, this provide valuable ideas for the study of high work function TCO thin films.
An OLED device with structure of IWO/In2O3:Pt,W/NPB/Alq3/LiF/Al was fabricated. When the voltage is 14 V, the current density and the brightness is 1600 mA/cm2 and 2.5×104 cd/m2, respectively. While the current density and the brightness of the OLED with ITO anode is 950 mA/cm2 and 7.2×103 cd/m2. This verifies OLED with the high work function anode has low working voltage.
OLED的工作原理基本上可以分为载流子的注入、载流子的传输和载流子复合及辐射衰减三个过程。载流子注入是指载流子通过电极/有机层界面从电极进入有机层的过程。该过程的难易程度对器件的工作电压、效率和寿命有直接的影响。选择合适的电极材料并对电极进行修饰是提高载流子注入和实现注入平衡的重要途径。如果仔细考察一下OLED的发展历史就会发现,OLED效率和稳定性提高的过程在某种意义上说也是电极改善的过程。高功函数阳极可以降低阳极和空穴传输层之间的势垒,改善空穴的注入效果,进而改善器件的性能。
针对上述课题,本课题开展了铟锌氧化物半导体TFT以及高功函数透明导电氧化物(TCO)薄膜的研究。透明氧化物半导体(TOS)如In2O3和ZnO的载流子迁移率相对较高,工艺温度较低,在均匀性、成本和适用基板等方面也具有优越性。因此如果在TFTLCD或AMOLED中采用透明氧化物半导体TFT替代a-SiTFT或p-Si TFT作为像素开关,将大大提高有源矩阵的开口率,从而提高亮度,降低功耗；因为制备温度较低甚至是室温,所以氧化物TFT又适用于柔性显示。与采用空穴注入缓冲材料如酞菁铜(CuPc)等技术不同,高功函数TCO薄膜的研制仅需在制备TCO薄膜的工艺中增加一个靶材,与现有的OLED生产工艺的相容性好,方法简单,成本低廉,具有产业化的前景,也有将此技术移植到ITO的制备工艺中的潜能,能够为大规模使用高功函数TCO的技术奠定基础。论文开展的主要研究工作和取得的成果如下：
采用直流反应磁控溅射InZn合金靶,在玻璃衬底上制备了非晶透明铟锌氧化物(a-IZO)半导体薄膜。研究了铟锌含量比和氧分量等参数对a-IZO半导体薄膜的电学和光学性能的影响。研究结果表明,通过调节制备过程中的氧分压,在保证可见光平均透射率大于80%的前提下,实现了a-IZO薄膜的电阻率可在10-3ohm-cm到106ohm-cm量级范围内的调制,而且所制备的a-IZO薄膜具有良好的表面平整性,表面方均根粗糙度小于1nm。这对探索全透明TFT器件的沟道层和电极材料具有重要意义。
论文研究了顶栅和底栅结构的IZO-TFT。其中,以磁控溅射法室温制备a-IZO半导体沟道层,以脉冲等离子体沉积(PPD)技术制备SiO2介质层薄膜。顶栅结构氧化硅介质层IZO-TFT器件的阈值电压和迁移率分别为-2.4V和0.25 cm2V-1s-1；底栅结构氧化硅介质层IZO-TFT器件的阈值电压和迁移率分别为0.94 V和5.2cm2 V-1s-1,器件的开关比约为104。实验证实了PPD制备的SiO2介质层构成的TFT,也能显示良好的器件性能。以直流磁控溅射法制备的Ta2O5作为介质层,制备了顶栅结构氧化钽介质层IZO-TFT器件,器件的阈值电压和迁移率分别为0.22 V和1.1 cm2V-1s-1。
提出了氧化物半导体沟道层和有机介质层研制TFT的思路。采用提拉和旋涂方法低温制备了绝缘性和透明性良好的聚乙烯吡咯烷酮有机介质层。以此有机介质层和a-IZO沟道层结合成功制备了高性能无机-有机复合结构的IZO-TFT,器件迁移率、阈值电压和开关比分别为7.8 cm2V-1s-1、-4.8 v和3.9×105。研究表明,氧分压比较高的条件下制备的IZO薄膜,其载流子迁移率比较低,以它为沟道层制备的TFT器件的迁移率也比较低。
采用旋涂法室温制备聚四乙烯苯酚(PVP)有机介质层,其可见光平均透射率也大于85%。采用溅射法室温制备表面平整的a-IZO半导体薄膜。以a-IZO作为沟道层、PVP作为介质层,室温制备了顶栅结构的无机有机混合型TFT,测试结果表明该类型的TFT具有饱和特性,且显示耗尽工作模式。TFT的阈值电压为-1.5V,迁移率为3.3 cm2V-1s-1,开关比为105。聚四乙烯苯酚有机介质层旋涂后,进行低温烘烤处理,烘烤处理后,薄膜晶体管的迁移率、阈值电压和开关比分别为3.8V、25.4 cm2V-1s-1和>106。器件的性能得到了改善,这是由于烘烤有利于去除有机层中溶剂的残余成分和改善有机层与沟道层之间的界面状态。实验结果揭示了该种TFT的良好性能和应用前景。
论文在采用直流磁控溅射法研制了具有优良光学和电学性能的掺钨氧化铟(IWO)透明导电氧化物薄膜的基础上,研究了退火处理工艺对IWO薄膜光学和电学性能的影响。实验发现IWO薄膜的光学和电学性能对氧分压非常敏感,退火处理有助于改善IWO薄膜的电阻率,获得了最小电阻率为2.2×10-4ohm·cm,载流子迁移率高达63.5 cm2V-1s-1,可见光范围平均透射率(含基片)83.2%的光学和电学性能优良的IWO薄膜。
在IWO薄膜研究工作的基础上,探索性地开展了铂钨共掺高功函数薄膜In2O3：Pt,W的研究。在IWO薄膜之上,研制一层很薄的铂钨共掺氧化铟薄膜,通过改变掺铂含量和铂钨共掺氧化铟薄膜的厚度,实现了既保持透明性,有能有效调制功函数的In2O3：Pt,W透明导电氧化物薄膜。利用XPS和AFM等分析表征In2O3：Pt,W薄膜的化学价态以及表面形貌。In203：Pt,W薄膜的表面方均根粗糙度小于7nm。采用UPS表征样品的表面功函数。实验结果表明,In2O3：Pt,W薄膜中Pt含量为6.7 at.%,薄膜厚度为10nm时,In2O3：Pt,W薄膜的功函数由原来的IWO薄膜的4.6 eV提高到了5.5 eV,这时薄膜的电阻率为5.7×10-4ohm-cm,可见光范围的平均透射率为82.7%,证实了高功函数元素可以有效提高透明导电氧化物薄膜的功函数,为研制高功函数TCO薄膜提供了有价值的思路。
在高功函数In2O3：Pt,W研究的基础上,以IWO/In2O3：Pt,W薄膜为阳极,研制了IWO/In203：Pt,W/NPB/Alq3／LiF/Al结构的OLED器件。研究结果表明,当该器件的工作电压为14v时,电流密度和发光亮度分别达到1600mA/cm2和2.5×104cd/m2。而采用ITO薄膜为阳极,以同样结构和同样工艺条件制备的OLED器件,在相同的工作电压条件下,其电流密度和发光亮度仅为950mA/cm2和7.2x103cd/m2,证实了高功函数阳极能有效降低OLED器件的工作电压。
Active Matrix Organic Light Emitting Diode (AMOLED) displays have been considered as the next generation displays technologies due to its advantages such as much thinner and lighter weight, quick response, high contrast ratio, wide viewing angle and low power consumption. Currently, amorphous silicon(a-Si) TFT and polycrystalline silicon(p-Si) TFT are two main technologies to determine which pixels get turned on to form an picture. Usually, the field effect mobility for a-Si TFT is less than 1 cm2/V·s and can not be used to the fast, large-area and high definition display. Besides, a-Si thin film is opaque and light-sensitive, which results in the decrease of aperture ratio and requires the black matrix. Therefore, power consumption will be raised for the increase of light intensity so as to obtain enough brightness. Low-temperature polycrystalline silicon (LTPS) TFT technology is also attractive for the high field effect mobility and demonstrates advantages like fast response, high brightness and high definition. Nevertheless, LTPS TFT faces problems, such as ununiformity, complicated process and high cost. Moreover, it is not transparent and the process temperature is still high for organic substrates, thus unsuitable for flexible displays.
The main work principle for OLED can be defined as three processes:carrier injection, carrier transport, recombination and radiation degradation. The carrier injection can be explained that the carrier enters the organic layer through the interface between the electrode and the organic layer. The control of this process has direct effects on work voltage, efficiency and lifetime of the device. Thus, it is rather important to choose appropriate electrode material and make certain modification for improving the carrier injection and balancing the process. In fact, it can be referred from the development of OLED that the improvement of OLED efficiency and stability attributes much to the improvement of electrode. The high work function of the anode helps to reduce the potential barrier between the anode and hole transport layer (HTL), with better hole injection and OLED performance.
As to above issues, the investigations of indium zinc oxide (IZO) semiconductor thin films and transparent conductive oxide (TCO) thin films with high work function were carried out. Transparent oxide semiconductors (TOS), such as In2O3 and ZnO, have both high carrier mobility and high transparency in the visible region. Low temperature process and uniformity are also their advantages. The substitution of the TFT with TOS for silicon-based TFT in TFT LCD or AMOLED may improve the pixel aperture ratio and brings higher brightness with lower power consumption. Such TFT can be prepared at room temperature, implying the potential application in flexible displays. Compared with the introduction of buffer materials for hole injection, CuPc for an instance, the fabrication of TCO thin films with high work function needs only an additional target and is compatible with the current OLED production, meeting industry concerns. Main research work and achievements are concluded as follows.
The transparent amorphous In-Zn-O (a-IZO) semiconductor thin films have been prepared on glass substrates using direct current reactive magnetron sputtering with In/Zn alloy targets. The influence of deposition parameters such as In/Zn ratio and oxygen partial pressure on electrical and optical properties of a-IZO thin films have been investigated in detail. The result shows that by adjusting oxygen partial pressure during the deposition, the resisitivity of a-IZO thin film can be changed from 10-3 to 106 ohm-cm with the transmittance of over 80% in the visible light region. Moreover, the prepared a-IZO thin films have smooth surfaces with the root mean square roughness less than 1 nm.
Amorphous IZO-based TFTs with both top-gate structure and bottom-gate structure are prepared. The a-IZO channel layer was deposited by dc reactive magnetron sputtering at room temperature. SiO2 dielectric layer was prepared by pulsed plasma deposition (PPD) method. The top-gate IZO-TFT demonstrates the threshold voltage of -2.4 V and mobility of 0.25 cm2 V-1s-1 and the corresponding values are 0.94 V and 5.2 cm2 V-1s-1 for bottom-gate IZO-TFT with the on-off ratio-104. The top-gate IZO-TFT using TaaO5 dielectric layer prepared by dc reactive magnetron sputtering shows the threshold voltage of 0.22 V and mobility of 1.1 cm2 V-1s-1.
The thought of preparing TFT with oxide semiconductor channel layer and organic dielectric layer was proposed. The polyvinyl pyrrolidone dielectric layer was prepared at low temperature with good transparency and insulation by dip coating and spin coating. The hybrid IZO-TFT with inorganic channel layer and organic dielectric layer has been successfully prepared. The mobility, threshold voltage and on-off ratio of the device are 7.8 cm2V-1s-1、-4.8 V and 3.9 X 105, respectively. It is also found that IZO thin film prepared at high oxygen partial pressure shows lower carrier mobility and the TFT device with it as the channel displays lower field effect mobility accordingly.
Poly-4-vinylphenol was also used as the dielectric layer and prepared at room temperature by spin coating with the transmittance over 85% in the visible region. The top-gate IZO TFT with poly-4-vinylphenol dielectric layer works in the depletion mode. The threshold voltage, mobility and on-off ratio of the device are-1.5 V,3.3 cm2V-1s-1 and 105, respectively. When the organic layer was properly cured, the mobility of the TFT is remarkably enhanced to 25.4 cm2V-1s-1 with the threshold voltage of 3.8 V. The device performance are improved because the baking helps to make the organic layer more compact, remove the residual component of the solvent, and better the interface between the dielectric layer and the channel layer.
Transparent conductive tungsten-doped indium oxide (IWO) thin films with low resistivity and high transparency in the visible region are deposited. The experimental parameters are optimized. For example, the oxygen partial pressure significantly influences performance of IWO films. Further, the effects of post-annealing on the electrical and optical properties of IWO films are studied. It is found that proper post-annealing can reduce thin film resistivity and IWO film exhibits the minimum resistivity of 2.2×10-4Ω·cm. The carrier mobility reaches 63.5 cm2 V-1s-1 and the transmission is 83.2% in visible region.
Platinum and tungsten codoped indium oxide (In2O3:Pt,W) thin layers with high work function were then prepared and studied in detail. On IWO layer, In2O3:Pt,W film of a few nanometers was deposited. The work function can be modulated with still high transparency in the visible region by adjusting the platinum content and the thickness of In2O3:Pt,W thin film. The chemical valence of elements and the morphology are characterized by X-ray photoelectron spectroscopy (XPS) and Atomic Force Microscope (AFM), respectively. The root mean square roughness of In2O3:Pt,W thin film is less than 7nm. The work function of thin films are characterized using Ultraviolet Photoemission Spectroscopy (UPS). It was confirmed that the work functions 3φof IWO and IWO/In2O3:Pt,W thin films are 4.7 and 5.5 eV, respectively. The resistivity of IWO/In2O3:Pt,W double layers film reaches 5.7×10-4 ohm-cm and the average visible light transmission of 82.7% was obtained. It is confirmed that the high work function elements is effective for the improvement of TCO thin film work function, this provide valuable ideas for the study of high work function TCO thin films.
An OLED device with structure of IWO/In2O3:Pt,W/NPB/Alq3/LiF/Al was fabricated. When the voltage is 14 V, the current density and the brightness is 1600 mA/cm2 and 2.5×104 cd/m2, respectively. While the current density and the brightness of the OLED with ITO anode is 950 mA/cm2 and 7.2×103 cd/m2. This verifies OLED with the high work function anode has low working voltage.
引文
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