自旋电子学相关研究
摘要
自旋电子学是一门新兴学科,是目前倍受关注的研究领域。众所周知,目前大部分的微电子器件、集成电路的处理单元等都是基于对电子电荷的调制,而基于电子自旋(轨道)磁性的信息存储、身份识别等在目前人类生活当中也具有相当重要的地位。自旋电子学的研究目的就是将电子的这两种性质结合起来。
目前自旋电子学的主要研究内容包括自旋器件与材料两个方面。本论文对这两个方面的相关问题开展了研究,主要研究内容和取得的结果有:
(1)纳米度域Co掺杂ZnO稀磁性半导体的制备研究。在H_2SO_4和C_2H_2O_4两种电解液中用直流恒电位阳极氧化技术二次氧化制备了孔径在10～60nm之间的系列多孔阳极氧化铝(AAO)模板,利用电化学沉积的方法在模板中沉积得到了Zn_(99.35)Co_(0.65)O纳米线。VSM测试证明所制备的Co掺杂ZnO具有明显的铁磁性质,EDS测试证明了Zn_xCo_(1.x)O的化学配比与反应溶液中各反应物的摩尔比例相一致。
(2)Fe[001]/MgO[001]/Fe[001]磁隧道结多层薄膜的制备。采用低速交替溅射方法制备了具有极薄预溅射层的Fe/MgO/Fe隧道结。通过改变预溅射层中的Fe层和MgO层的厚度及样品的退火温度,实现了隧道结中Fe层和MgO层沿[001]方向的共同取向,检测了预溅射层厚度及样品退火温度对于薄膜结晶性质的影响,获得了预溅射层厚度及退火温度的最佳值以及高自旋极化电极。
(3)自旋极化电流长程输运测试。利用溅射技术沉积了平面电极,并利用FIB技术对电极进行了刻蚀。水平Kerr效应测试证明得到了磁化强度方向反转。用染色电泳的方法在电极之间成功地连接了CNT,并实现了CNT的数量可控。利用楔形电极测试了实验用多壁CNT的电学性质,在对特殊条件下制备的器件原型的外加磁场电阻测试发现,当外加磁场到达250e时得到大约为15%的MR信号。
Spintronics is a rising and attended research field presently.As well known,the basis of information technology is the charge of electron.Most of microelectronic device and processing unit in integrate circuit is based on the manipulation of charge in electronic circuit.And the magnetic property based on the spin of electron also possesses important role in passing economic life.For instance:information storage, identification and communication.The research purpose of spintronics is to combine this two properties of electron together.That means spin devices research and spin materials research.In this work,this two research objects all were studied and discussed.The main research contents just like follow:
(1) The preparation of Co-doped ZnO diluted magnetic semiconductor in nano scale. Firstly,we prepared a series of porous anodic oxide aluminum template(diameter is from 10nm to 60nm) by DC constant voltage oxide technique in H2SO4 and C_2H_2O_4 electrolyte.Then Zn_(99.35)Co_(0.65)O nanowires were deposited in templates. The VSM testing proved the prepared Co-doped ZnO have distinct ferromagnetic property,and the EDS testing proved the proportion of element in Zn_xCo_(1-x_O is matched with the mol proportion of the reactants in solution.
(2) The synthesis of Fe[001]/MgO[001]/Fe[001]magnetic tunnel junctions(MTJs) multilayer films.A series of Fe/MgO/Fe magnetic tunnel junctions were synthesized by low speed alternate sputtering,the testing results proved the different thickness of pre-sputtering layer has effect on the crystallographic properties of Fe/MgO/Fe tunnel junction.Meanwhile,the samples we fabricated were annealed in deferent temperature.The right annealing temperature can improve the crystallographic properties of tunnel junction.After XRD testing,we found the fabricated MTJs gained mutual[001]orientation of Fe and MgO after deposition of proper thickness pre-sputtering layer.At last,we found the optimal condition of the thickness of pre-sputtering layer and annealing temperature.The candidate of high spin-polarization electrodes was gained.
(3) The characterization of long-distance transportation of spin current.The flat electrodes were deposited by alternate sputtering.The horizontal Kerr effect testing results demonstated the reversal of magnetization orientation.Then carbon nanotubes(CNTs) were connected between electrodes by dye electrophoresis method successfully.And the numbers of the connected CNT could be controlled also.In the MR testing,the 15%MR testing signal appeared when the external magnetic field reached 25 Oe.
目前自旋电子学的主要研究内容包括自旋器件与材料两个方面。本论文对这两个方面的相关问题开展了研究,主要研究内容和取得的结果有:
(1)纳米度域Co掺杂ZnO稀磁性半导体的制备研究。在H_2SO_4和C_2H_2O_4两种电解液中用直流恒电位阳极氧化技术二次氧化制备了孔径在10～60nm之间的系列多孔阳极氧化铝(AAO)模板,利用电化学沉积的方法在模板中沉积得到了Zn_(99.35)Co_(0.65)O纳米线。VSM测试证明所制备的Co掺杂ZnO具有明显的铁磁性质,EDS测试证明了Zn_xCo_(1.x)O的化学配比与反应溶液中各反应物的摩尔比例相一致。
(2)Fe[001]/MgO[001]/Fe[001]磁隧道结多层薄膜的制备。采用低速交替溅射方法制备了具有极薄预溅射层的Fe/MgO/Fe隧道结。通过改变预溅射层中的Fe层和MgO层的厚度及样品的退火温度,实现了隧道结中Fe层和MgO层沿[001]方向的共同取向,检测了预溅射层厚度及样品退火温度对于薄膜结晶性质的影响,获得了预溅射层厚度及退火温度的最佳值以及高自旋极化电极。
(3)自旋极化电流长程输运测试。利用溅射技术沉积了平面电极,并利用FIB技术对电极进行了刻蚀。水平Kerr效应测试证明得到了磁化强度方向反转。用染色电泳的方法在电极之间成功地连接了CNT,并实现了CNT的数量可控。利用楔形电极测试了实验用多壁CNT的电学性质,在对特殊条件下制备的器件原型的外加磁场电阻测试发现,当外加磁场到达250e时得到大约为15%的MR信号。
Spintronics is a rising and attended research field presently.As well known,the basis of information technology is the charge of electron.Most of microelectronic device and processing unit in integrate circuit is based on the manipulation of charge in electronic circuit.And the magnetic property based on the spin of electron also possesses important role in passing economic life.For instance:information storage, identification and communication.The research purpose of spintronics is to combine this two properties of electron together.That means spin devices research and spin materials research.In this work,this two research objects all were studied and discussed.The main research contents just like follow:
(1) The preparation of Co-doped ZnO diluted magnetic semiconductor in nano scale. Firstly,we prepared a series of porous anodic oxide aluminum template(diameter is from 10nm to 60nm) by DC constant voltage oxide technique in H2SO4 and C_2H_2O_4 electrolyte.Then Zn_(99.35)Co_(0.65)O nanowires were deposited in templates. The VSM testing proved the prepared Co-doped ZnO have distinct ferromagnetic property,and the EDS testing proved the proportion of element in Zn_xCo_(1-x_O is matched with the mol proportion of the reactants in solution.
(2) The synthesis of Fe[001]/MgO[001]/Fe[001]magnetic tunnel junctions(MTJs) multilayer films.A series of Fe/MgO/Fe magnetic tunnel junctions were synthesized by low speed alternate sputtering,the testing results proved the different thickness of pre-sputtering layer has effect on the crystallographic properties of Fe/MgO/Fe tunnel junction.Meanwhile,the samples we fabricated were annealed in deferent temperature.The right annealing temperature can improve the crystallographic properties of tunnel junction.After XRD testing,we found the fabricated MTJs gained mutual[001]orientation of Fe and MgO after deposition of proper thickness pre-sputtering layer.At last,we found the optimal condition of the thickness of pre-sputtering layer and annealing temperature.The candidate of high spin-polarization electrodes was gained.
(3) The characterization of long-distance transportation of spin current.The flat electrodes were deposited by alternate sputtering.The horizontal Kerr effect testing results demonstated the reversal of magnetization orientation.Then carbon nanotubes(CNTs) were connected between electrodes by dye electrophoresis method successfully.And the numbers of the connected CNT could be controlled also.In the MR testing,the 15%MR testing signal appeared when the external magnetic field reached 25 Oe.
引文
[1]S.A.Wolf,D.D.Awschalom,R.A.Buhrman,J.M.Daughton,S.Von Molnar,M.L.Roukes,A.Y.Chtchelkanova,and D.M.Treger,Science,294,1488(2001).
[2]S.Datta and B.Das,Appl.Phys.Lett.56,665(1990).
[3]N.F.Mott,Proc.R.Soc.London,Ser.A 153,699(1936).
[4]N.F.Mott,Proc.R.Soc.London,Ser.A 156,368(1936).
[5]Tedrow,P.M.,and R.Meservey,Phys.Rev.Lett.26,192(1971).
[6]Tedrow,P.M.,and R.Meservey,Phys.Rev.Lett.27,919(1971).
[7]Tedrow,P.M.,and R.Meservey,Phys.Rev.B 7,318(1973).
[8]Tedrow,P.M.,and R.Meservey,Phys.Rep.238,173(1994).
[9]Barthelemy A and Fert A,Phys.Rev.B.43,13124(1991).
[10]de Groot R A,Mueller F M,van Engen P G and Buschov K H,J.Appl.Phys.55,2151(1984).
[11]Johnson M and Silsbee R H,Phys.Rev.Lett.55,1790(1985).
[12]Valet T and Fert A,Phys.Rev.B.48,7099(1993).
[13]Yang Q,Lee S F,Henry L L,Lololee R,Schroeder P A,Pratt W P and Bass J,Phys.Rev.Lett.72,3274(1994).
[14]Fert A,Duvail J-L and Valet T,Phys.Rev.B.52,6513(1995).
[15]Elliott,R.J,Phys.Rev.96,266(1954).
[16]D'yakonov,M.I,and V.I.Perel',JETP Lett.13,144(1971).
[17]D'yakonov,M.I,and V.I.Perel',JETP Lett.13,467(1971).
[18]D'yakonov,M.I,and V.I.Perel',Sov.Phy.JETP.33,1053(1971).
[19]D'yakonov,M.I,and V.I.Perel',Sov.Phys.Solid State.13,3023(1971).
[20]Bir,G.L.,A.G.Aronov,and G.E.Pikus,Sov.Phys.JETP 42,705(1976).
[21]Prinz G A.Phys Today,45,58(1995).
[22]Kasuya,T,and A.Yanase,Rev.Mod.Phys.40,684(1968).
[23]Nagaev,E.L,1983,Physics of Magnetic Semiconductors(Mir,Moscow).
[24]Thomson.W,Proc.R.Soc.8,546(1857).
[25]Baibich M.N,Broto J.M,Fert A,Nguyen Van Dau,F Petroff,P.Eitenne,G.Creuzet,A.Friederich,and J.Chazelas Phys.Rev.Lett.61,2472(1988).
[26]Hartman.U,2000,Ed,Magnetic Multilayers and Giant Magnetoresistance(Springer,Berlin).
[27]Hirota,E,H.Sakakima and K.Inomata,2002,Giant MagnetoResistance Devices(Springer,Berlin).
[28]Parkin,S.S.P,2002,in Spin Dependent Transport in MagneticNanostructures,edited by S.Maekawa and T.Shinjo(Taylor and Francis,New York),pp.237-271.
[29]Pratt,W.P,Jr,S.E Lee,J.M.Slaughter,R.Loloee,P.A.Schroeder and J.Bass,Phys.Rev.Lett.66,3060(1991).
[30]Gijs,M.A.M,and G.E.W.Bauer,Adv.Phys.46,285(1997).
[31]Levy,P.M,and I.Mertig,2002,in Spin Dependent Transportin Magnetic Nanostructures, edited by S.Maekawa and T.Shinjo(Taylor and Francis,New York),pp.47-111.
[32]Mathon,J,and A.Umerski,Phys.Rev.B.56,11810(1997).
[33]Parkin,S.S.P,R.Bhadra and K.P.Roche,Phys.Rev.Lett.66,2152(1991).
[34]Parkin,S.S.P,Z.G.Li and D.J.Smith,Appl.Phys.Lett.55,2710(1991).
[35]Julliere M,Phys.Lett.54A,225(1975).
[36]Alvarado,S.F,Phys.Rev.Lett.75,513(1995).
[37]Mohri K,Kohzawa T,Yoshida H and Panina L V,IEEE Trans Magn..28,3150(1992).
[38]Daughton J,Brown J,Chen E,Beech R,Pohm A and Kude W.IEEE Trans Magn.30.4608(1994).
[39]Miyazaki,T,and N.Tezuka,J.Magn.Magn.Mater.139,L231(1995).
[40]Moodera,J.S,L.R.Kinder,J.Nowak,P.LeClair and R.Meservey,Appl.Phys.Lett.69,708(1996).
[41]Parkin,S.S.P,K.P.Roche,M.G.Samant,P.M.Rice,et al.,J.Appl.Phys.85,5828(1999).
[42]Tehrani.S,B.Engel,J.M.Slaughter,E.Chen,M.DeHerrera,M.Durlam,P,Naji,R.Whig,J.Janesky and J.Calder,IEEE Trans.Magn.36,2752(2000).
[43]Wang D,Nordman C,Daughton J M,Qian Z,Fink J,IEEE Trans Magn.40,2269(2004)
[44]Grunberg P A.Sensors and Actuators A.91,153(2001).
[45]G.A.Prinz.,Science.282,1660(1998).
[46]Butler W H and Gupta A.Nature Mater.3,845(2004).
[47]Parkin S S P,Kaiser C,Panchula A,et al.,Nature Mater.3,862(2004).
[48]Yuasa S,Nagahama T,Fukushima A,Suzuki Y,Ando K.Nature Mater.,3:868(2004).
[49]Tsunekawa K,Djayaprawira D D,Nagai M,Maehara H,Yamagata S,Watanabe N,Yuasa S,Suzuki Y,Ando K.Appl Phys Lett.87,072503(2005).
[50]Daughton J M.Thin Solid Films.216,162(1992).
[51]Brown J L and Pohm A V,IEEE Trans Components,Packaging,and Manufacturing Technology.PartA.17,373(1994).
[52]H.Ohno,Science.281,951(1998).
[53]Pearton,S.J.,C.R.Abernathy,M.E.Overberg,G.T.Thaler,D.P.Norton,N.Theodoropoulou,A.F.Hebard,Y.D.Park,F.Ren,J.Kim,and L.A.Boatner,J.Appl.Phys.93,1(2003).
[54]Dediu.V,M.Murgia,F.C.Matacotta,C.Taliani,and S.Bar-banera,Solid State Commun.122, 181(2002).
[55]Pejakovi.D.A,C.Kitamura,J.S.Miller,and A.J.Epstein,Phys.Rev.Lett.88,057202(2002).
[56]Epstein.A.J,MRS Bull.28,492(2003).
[57]Goldman.A.M,V.Va'sko,P.Kraus,K.Nikolaev,Magn.Mater.200,69(1999).
[58]Tsukagoshi.K,B.W.Alphenaar,and H.Ago,Nature.401,572(1999).
[59]Zhao.B,I.Mo "nch,H.Vinzelberg,T.Mu "hl,and C.M.Schneider,Appl.Phys.Lett.80,3144(2002).
[60]Kasuya.T,and A.Yanase,Rev.Mod.Phys.40,684(1968).
[61]Nagaev,E.L.,1983,Physics of Magnetic Semiconductors(Mir Moscow).
[62]T.Dietl,H.Ohno,F.Matsukura,J.Cibert,D.Ferrand,Science,287,1019(2000).
[63]Fumiyoshi Takano,Hiro Akinaga,Takashi Tokizaki,Shinji Kuroda and Koki Takita,Appl.Phys.Lett.83,2853(2003).
[64]Yoon shon,Young Hae Kwon,Sh.U.Yuldashev,Y.S.Park,D.J.Fu,D.Y.Kim,H.S.Kim,and T.W.Kang,J.Appl.Phys.93,1546(2003).
[65]R.K.Singh,Stephen Y.Wu,H.X.Liu,Lin Gu,David.I.Smith,and N.Newman,Appl.Phys.Lett.86,012504-1(2005).
[66]S.Venugopalan,L.A.Kolodziejski,R.L.Gunshor,and A.K.Rarndas,Appl.Phys.Lett.45,974(1984).
[67]H.Ohno,A.Shen,E Matsukura,A.Oiwa,A.Endo,S.Katsumoto,and Y.Lye,Appl.Phys.Lett.69,363(1996).
[68]T.Hanbicki,B.T.Jonker,G.Itskos,G.Kioseoglou,and A.Petrou,Appl.Phys.Left.80,1240(2002).
[69]Kai Chang,J.B.Xia,and F.M.Peeters,Appl.Phys.Lett.82,2661(2003).
[70]Jih-Jen Wu,Sai-Chang Liu,and Ming-Hsun Yang,Appl.Phys.Lett.85,1027(2004).
[71]Y.Fukuma,H.Asada,J.Miyashita,N.Nishimura,and T.Koyanagi,J.Appl.Phys.93,7667(2003).
[72]Y.Q.Chang,D.B.Wang,X.H.Luo,X.Y.Xu,X.H.Chen,L.Li,C.P.Chen,R.M.Wang,J.Xu,and D.P.Yu,Appl.Phys.Lett.83,4020(2003).
[73]S.Lee,D.Y.Shin,l.Titova,M.Kutrowski,M.Dobrowolska,and J.K.Furdyna,Appl.Phys.Lett.83,2865(2003).
[74]I.A.Buyanova,I.G.Ivanov,B.Monemar,W.M.Chen,A.A.Toropov,Ya.V.Terent'ev,S.V.Lebedev,S.V.Ivanov,and P.S.Kop'ev,Appl.Phys.Lett.81,2196(2002).
[75]Francesco Giazotto,Fabio Taddei,Rosario Fazio,and Fabio Beltram,Appl.Phys.Lett.82,2449(2003).
[76]A.B.Pakhomov,Bradley K.Roberts,and Kannan M.Krishnan,Appl.Phys.Lett.83,4357(2003).Zno co
[77]Nguyen Hoa Hong,Joe Sakai,and Awatef Hassini,Appl.Phys.Lett.84,2602(2004).
[78]S.Lee,K.Park,M.Dobrowolska,and J.K.Furdyna,J.Appl.Phys.95,7184(2004).
[79]C.B.Fitzgerald,M.Venkatesan,A.P.Douvalis,S.Huber,J.M.Coey,and T.Bakas,J.Appl.Phys.95,7390(2004)
[80]Norton,W.Tang,M.Stavola,J.M.Zavada,R.G.Wilson,Physica B.39,340(2003).
[81]Y.Fukuma,H.Asada,M.Arifuku,and T.Koyanagi,Appl.Phys.Lett.80,1013(2002).
[82]S.Lee,H.S.Lee,J.Y.Lee,M.Dobrowolska,and J.K.Furdyna,Appl.Phys.Lett.86,033114-1(2005).
[83]T.Yokota,N.Fujimura,T.Wada,S.Hamasaki,and T.Ito,J.Appl.Phys.91,7905(2002).
[84]H.Saito,W.Zaets,S.Yamagata,Y.Suzuki,and K.Ando,J.Appl.Phys.91,8085(2002).
[85]K.W.Edmonds,N.R.S.Farley,T.K.Johal,R.P.Campion,B.L.Gallagher,C.T.Foxon,and G.van der Laan,J.Appl.Phys.95,7166(2004).
[86]S.S.A.Seo,T.W.Nob,Y.-W.Kim,J.D.Lim,Y.D.Park,Y.S.Kim,Z.G.Khim,H.C.Jeon,T.W.Kang,and S.J.Pearton,J.Appl.Phys.95,8172(2004).
[87]Lee,Y.D.Park,Z.G.Khim,J.Kim,and F.Ren,Appl.Phys.Lett.80,3964(2002).
[88]M.Bouloudenine,N.Viart,S.Colis,J.Kortus and A.Dinia,Appl.Phys.Lett.87,052501(2005).
[1]冯端,金国钧,凝聚态物理学,高等教育出版社(2002).
[2]姜寿亭,李卫,凝聚态磁性物理,科学出版社(2003).
[3]戴道生,钱坤明,铁磁学上册,科学出版社(1998).
[4]S.Chikazumi,Physics of Ferromagnetism,Cambrige Press(1997).
[5]冯端,金属物理学,第四卷,科学出版社(1998).
[6]R.OHandley,Modern Magnetic Materials,John Wiley & Sons(2000).
[7]R.Becket and W.Drring,Ferromagnetism,Springer,Berlin(1939).
[8]近角聪信箸,葛世惠译,铁磁性物理,兰州大学出版社(2002).
[9]钟文定,铁磁学中册,科学出版社(1998).
[10]近角聪信箸,韩俊德,杨膺善译,磁性体手册,冶金工业出版社(1985).
[11]J.A.C.Bland,B.Heinrich,Ultrathin Magnetic Structures,Springer-Verlag,Berlin Heidelberg(2005).
[12]M.T.Johnson,P.J.H.Bloemen,F.J.A.den Broeder and J.J.de Vries,Rep.Prog.Phys.59,1409(1996).
[13lB.Heinrich,J.F.Cochran,Advances in Physics.42,523(1993).
[14]B.Schulz,K.Baberschke,Phys.Rev.B.50,13467(1994).
[15]B.Schulz,R.Schwarzwald,K.Baberschke,Surface Science.307,1102(1994).
[16]K.Amemiya,E.Sakai,D.Matsumura,H.Abe,T.Ohta,T.Yokoyama,Phys.Rev.B.71,214420(2005).
[17]F.J.Himpsel,J.E.Ortega,G.J.Mankey,R.F.Willis,Advances in Physics.47,511(1998).
[18]M.Farle,B.Mirwald-Schulz,A.N.Anisimov,W.Platow,K.Baberschke,Phys.Rev.B.55,3708(1997).
[19]Introduction to.the Theory of Ferromagnetism,A.Aharoni,Oxford University Press(2000).
[20]G.Bertotti,Hysteresis in Magnetism,Academic Press(1998).
[21]C.de Julian Fernandez,Phys.Rev.B.72,054438(2005).
[22]K.Zakeri,T.Kebe,J.Lindner and M.Farle,Phys.Rev.B.73,052405(2006).
[23]S.X.Wang,A.M.Taratorin,Magnetic Information Storage Technology,Academic Press(1998).
[24]F.Matsukura,H.Ohno and T.Dietl,Hand book of Magnetic Materials,14(Elsevier,Amsterdam,2002).
[25]Special issue:Semiconductor Spintronics in J.Semicond.Sci.Technol,17 275-403(2002).
[26]R.A.de Groot,F.M.Mueller,P.G.van Engen and K.H.J.Buschow,Phys.Rev.Lett.50,2024(1983).
[27]R.J.Soulen Jr.,J.M.Byers,M.S.Osofsky,et.al.,Science.282,85(1988).
[28]H.Kato,T.Okuda,Y.Okimoto,Y.Tomioka,K.Oikawa,T.Kamiyama and Y.Tokura,Phys.Rev.B 69,184412(2004).
[29]H.Ohno,H.Munekata,T.Penney,S.von Molnar,L.L.Chang,Phys.Rev.Lett.68,2664(1992).
[30]H.Ohno,A.Shen,F.Matsukura,A.Oiwa,A.Endo,S.Katsumoto and Y.Iye,Appl.Phys.Lett.69,363(1996).
[31]S.A.Wolf,D.D.Awschalom,R.A.Buhrman,J.M.Daughton,S.von Molnar,M.L.Roukes,A.Y.Chtchelkanova and D.M.Treger,Science.294,1488(2001).
[32]H.Akai and P.H.Dederichs,Phys.Rev.B.47,8739(1993).
[33]H.Akai,Department of Physics,Graduate School of Science,Osaka University,Machikaneyama 1-1,Toyonaka 560-0043,Japan,akai@phys.sci.osaka-u.ac.jp(2000)
[34]A.I.Liechtenstein et al.,J.Magn.Magn.Matter.67,65(1987).
[35]K.Sato,P.H.Dederichs and H.Katayama-Yoshida,Europhys.Lett.61,403(2003).
[36]K.Sato,P.H.Dederichs,H.Katayama-Yoshida and J.Kudrnovsky,J.Phys.Condens.Matt.16,S5491(2004).
[37]H.Akai,Phys.Rev.Lett.81,3002(1998).
[1]郑伟涛,薄膜材料与薄膜技术,北京:化学工业出版社(2004).
[2](U|¨).(O|¨)zg(u|¨)r,A.Teke,et al,J.Appl.Phys.98,041301(2005)
[3]D.C.Look,D.C.Reynolds,J.W.Hemski,R.L.Jones and J.R.Sizelove,Appl.Phys.Lett.75,811(1999).
[4]A.Y.Polyakov,et al,J.Appl.Phys.94,2895(2003).
[5]S.O.Kucheyev,J.S.Williams,C.Jagadish,J.Zou,C.Evans,A.J.Nelson andA.V.Hamza,Phys.Rev.B.67,094115(2003).
[6]F.Hamdani,et al.,J.Appl.Phys.83,983(1998).
[7]T.Dietl,H.Ohno,EMatsukura et al,Science.287,1019(2000).
[8]A.B.Pakhomov,Bradley,K.Roberts et al,Appl.Phys.Lett.83,4357(2003).
[9]S.G.Yang,A.B.Pakhomov et al,IEEE Trans.Magn.38,2877(2002).
[10]Sejoon Lee,Hye Sung Lee et al,Mat.Res.Soc.Symp.Proc.825E(2004).
[11]Y.Q.Chang,D.B.Wang et al,Appl.Phys.Lett.83,4020(2003).
[12]Jin-Jen.Wu,Sai-Chang Liu et.al,Appl.Phys.Lett.85,1027(2004).
[13]J.Okabayashi,k.Ono,et al,J.Appl.Phys.95,3573(2004).
[14]S.W.Yoon,S.B.Cho et al,J.Appl.Phys.93,7879(2003).
[15]K.Rode,A.Anane et al,J.Appl.Phys.93,7676(2003).
[16]J.H.shim,T.Hwang et al,Appl.Phys.Lett.86,082503(2005).
[17]D.C.Reynolds,C.W.Litton et al,J.Appl.Phys.95,4802(2004).
[18]黄传真,艾兴等,材料导报,vol.611,Iss.3(1997).
[19]Z.R.Tian,W.Tong,J.Y.Wang,N.G.Duan,V.V.Krishnan and S.L.Suib,Science.276,926(1997).
[20]T.M.Whitney,J.S.Jiang,P.C.Searson and C.L.Chien,Science.261,1316(1993).
[21]R.L.Fleiser,P.B.Price,et al.,"Nuclear Tracks in Solids",University of California Press,Berkeley(1975).
[22]J.C.Hulteen and C.R.Martin,"Nanoparticles and Nanostructured Films",Wiley-Vch,(1998).
[23]A.Encinas-Oropesa,M.Demand L.Piraux,I.Huynen and U.Ebels,Phys.Rev.B.63,104415(2001).
[24]U.Ebels,J.L.Duvail,P.E.Wigen,L.Piraux,L.D.Buda and K.Ounadjelal,Phys.Rev.B.64,14421(2001).
[25]Y.Henry and A.Iovan,J.M.George,L.Piraux,Phys.Rev.B.66,184430(2002).
[26]R.Ferre,K.Ounadjela,J.M.George,L.Piraux and S.Dubois,Phys.Rev.B.56,14066(1997).
[27]C.A.Huber,T.E.Huber,M.Sadoqi,J.A.Lubin,S.Manalis,C.B.Prater,Science.263,800(1993).
[28]J.O.Bockris,R.E.White,B.E.Conway,Modem Aspects of Electrochemistry,New York Plenum Press(1989).
[29]F.Keller,M.S.Hunter et al,J.Electrochem.Soc.100,411(1953)
[30]M Zheng,L Zhang,X Zhang et al.,Chem.Phys.Lett.334,298(2001).
[31]Z.K.Wang,M.H.Kuok,S.C.Ng,D.J.Lockwood,M.G.Cottam,K.Nielsch,R.B.Wehrspohn and U.G(o|¨)sele,Phys.Rev.Lett.89,027201(2002).
[32]M.Zheng,L.Menon,H.Zeng,Y.Liu,S.Bandyopadhyay,R.D.Kirby and D.J.Sellmyer,Phys.Rev.B.62,12282(2000).
[33]H.Zeng,R.Skomski,L.Menon,Y.Liu,S.Bandyopadhyay and D.J.Sellmyer,Phys.Rev.B.65,134426(2002).
[34]A.Kumar,S.F(a|¨)hler,H.Schl(o|¨)rb,K.Leistner and L.Schultz,Phys.Rev.B.73,064421(2006).
[35]X.Y.Zhang,G.H.Wen,Y.F.Chan,R.K.Zheng,X.X.Zhang and N.Wang,Appl.Phys.Lett..83,3341(2003).
[36]J.Mallet,K.Y.Zhang,C.L.Chien,T.S.Eagleton and P.C.Searson,Appl.Phys.Lett.84,3900(2004).
[37]Y.C.Sui,R.Skomski,K.D.Sorge,and D.J.Sellrnyer,Appl.Phys.Lett.84,1525(2004).
[38]Q.F.Zhan,Z.Y.Chen,D.S.Xue,and F.S.Li,Phys.Rev.B.66,134426(2002).
[39]Q.F.Liu,J.B.Wang,Z.J.Yan and D.S.Xue,Phys.Rev.B.72,14412(2005).
[40]N.Yasui A.Imada and T.Den,Appl.Phys.Lett.83,3347(2003).
[41]N.R.B.Coleman,N.O.Sullivan,K.M.Ryan,T.A.Crowley,M.A.Morris,T.R.Spalding,D.C.Steytler,J.D.Holmes,J.Am.Chem.Soc.123,7010(2001).
[42]P.M.Ajayan,O.Stephan,Ph Redilich,C.Colliex,Nature,375,564(1995).
[43]J.Sloan,D.V.Wright,H.G.Hoo,Chem.Commun.8,699(1999).
[44]A.Govinaarai,B.C.Satishkumar,M.Nath,C.N.R.Rao,Chem.Mater 12,202(2000).
[45]D.Zhou and S.Seraphin,Chem.Phys.Lett.222,233(1994).
[46]H.J.Dai,E.W.Wong,C.M.Lieber,Nature,375,769(1995).
[47]W.Han,S.Fan,Q.Li,Y.Hu,Science.277,1287(1997).
[48]C.Tang,S.Fan,M.L.D Chapelle,H.Dang,P.Li,Adv.Mater 12,1346(2000).
[49]Y.Li,G.W.Meng et al,Appl.Phys.Lett.76,2011(2000).
[50]李树棠,金属X射线衍射与电子显微分析技术,冶金工业出版社(1980).
[51]王培铭,许乾慰,材料研究方法,科学出版社(2005).
[52]J.B.Cui,U.J.Gibson et al,Appl.Phys.Lett.87,133108(2005).
[53]赵同云,磁性测量讲座(2004).
[54]李培森,物性测量原理与测试分析方法,兰州大学出版社(1997).
[1]Julliere M,Phys.Lett.54A:225(1975).
[2]Baibich M.N,Broto J.M,Fert A,Nguyen Van Dau F and Petroff.F,Phys.Rev.Lett.,61, 2472(1988).
[3]Prinz Gary A,Science.282,1660(1998).
[4]Maekawa.S,and Gafvert.U,IEEE Trans.Magn.18,707(1982).
[5]Suezawa.Y.and Gondo.Y,J.Magn.Magn.Mater.126,524(1993).
[6]Nakatani.R and Kitada M,J.Mater.Sci.Lett.10,827(1991).
[7]Miyazaki.T,Yaoi T.and Ishio S,J.Magn.Magn.Mater.98,L7(1991).
[8]Nowak.J and Ranluszkiewicz.J,J.Magn.Magn.Mater.109,79(1992).
[9]Yaoi.T,Ishio.S and Miyazaki.T,J.Magn.Magn.Mater.126,430(1993).
[10]Plaskett T S,Freitas P.P,Barradas N.P,da Silva M.F.and Soares J.C,J.Appl.Phys,76,6104(1994).
[11]Tezuka N,Ando Y and Miyazaki T,J.Magn.Soc.Jpn,19,369(1995).
[12]Miyazaki.T and Yezuka.N,J.Magn.Magn.Mater.139,L231(1995).
[13]Miyazaki.T and Yezuka.N,J.Magn.Magn.Mater.151,403(1995).[
14]Moodera.J.S,Kinder.L.R,Wong.T.M and Meservey.R,Phys.Rev.Lett.74,3273(1995).
[15]Moodera.J.S,Kinder.L.R,J.Appl.Phys.79,4724(1996).
[16]Moodera.J.S,Kinder.L.R,Nowak.J,Leclair.P and Meservey.R,Appl.Phys.Lett.69,708(1996).
[17]Lu Yu,Li.X.W,Gong.G.Q,Xiao Gang,Gupta.A,Lecoeur P,Sun.J.Z,Wang.Y.Y and Dravid.V.P,Phys.Rev.B.54,R8357(1996).
[18]Platt.C.L,Dieny.B and Berkowitz.A.E,Appl.Phys.Lett.,69,2291(1996).
[19]Gallager.W.J,Parkin.S.S.P,Lu.Y,Bian.X.P,Marley.A,Altman.R.A,Rishton.S.A,Roche.K.P,Jahnes.C,Shaw.T.M and Xiao.G,J.Appl.Phys.81,3741(1997).
[20]Platt.C.L,Dieny.B and Berkowitz.A.E,J.Appl.Phys.81(8),5523(1997).
[21]Sato.M and Kobayashi.K,IEEE Trans.Magn.33,3553(1997).
[22]Sun.J.J,Sousa.R.C,Galvao.T.T.P,Soares.V,Plaskett.T.S and Freitas.P.P,J.Appl.Phys.83,6694(1998).
[23]Sousa.R.C,Sun.J.J,Soares.V,Freitas.P.P,Kling.A,da Silva.M.F and Soares.J.C,Appl.Phys.Lett.73,3288(1998).
[24]Sun.J.J,Soares.V and Freitas.P.P,Appl.Phys.Lett.74,448(1999).
[25]Cardoso.S,Gehanno.V,Ferreira.R and Freitas.P.P,IEEE Trans.Magn.35,2952(1999).
[26]Cardoso.S,Freitas.P.P,de Jesus.C,Wei.P and Soares J.C,Appl.Phys.Lett.76,610(2000).
[27]Kikuchi.H,Sato.M and Kobayashi.K,J.Appl.Phys.87(9),6055(2000).
[28]Han Xiu-Feng,Daibou Tadaomi,Kamijo Makoto,Yaoita Kazuya,Kubota Hitoshi,Ando Yasuo and Miyazaki Terunbodu,Jpn.J.Appl.Phys.39,L439(2000).
[29]Yuasa.S,Sato.T,Tamura.E,Suzuki.Y,Yamamori.H,Ando.K and Katayama.T,Europhys.Lett.52(3),344(2000).
[30]Mathon.J and Umerski.A,Phys.Rev.B.63,220403(R)(2001).
[31]Butler.W.H,Zhang.X.-G and Schulthess.T.C,Phys.Rev.B.63,054416(2001).
[32]Faure-Vincent.J,Tiusan.C,Jouguelet.E,Canet.F,Sajieddine.M,Bellouard.C,Popova.E,Hehn.M,Montaigne.F and Schuhl.A,Appl.Phys.Lett.82,4507(2003).
[33]Yuasa.Shinji,Fukushima.Akio,Nagahama.Taro,Ando.Koji and Suzuki Yoshishige,Jpn.J.Appl.Phys.43,L588(2004).
[34]Yuasa.Shinji Nagahama.Taro,Fukushima.Akio,Suzuki Yoshishige and Ando Koji,Nature Materials.3,868(2004).
[35]Parkin.S.S.P,Kaiser.C,Panchula.A,Rice.P.M,Hughes.B,Samant.M and Yang.S.-H,Nature Materials.3,862(2004).
[36]Zhang.X.-G and Butler.W.H,Phys.Rev.B.70,172407(2004).
[37]Djayaprawira.D.D,Tsunekawa.K,Nagai.M,Maehara.H,Yamagata.S,Watanabe N,Yuasa S,Suzuki Y and Ando K,Appl.Phys.Lett.86,092502(20050.
[38]Wang.Dexin,Nordman.Cathy,Daughton.James.M,Qian.Zhenghong and Fink.Jonathon,IEEE Trans.Magn.,40(4),2269(2004).
[39]Wei.H.X,Qin.Q.H,Ma.M,Sharif.R and Hart X.F,J.Appl.Phys.101,09B501(2007).
[40]Coey.M,Nature Materials.4,9(2005).
[41]Yuasa Shinji,Fukushima Akio,Kubota Hitoshi,Suzuki Yoshishige and Ando Koji,Appl.Phys.Lett.89,042505(2006).
[42]Ikeda S.,Hayakawa J.,Lee Y.M.,Tanikawa T.,Matsukura F.and Ohno H.,J.Appl.Phys.,99,08A907(2006).
[43]Lee.Y.M,Hayakawa.J,Ikeda.S and Ohno.H,Appl.Phys.Lett.89,042506(2006).
[44]Hayakawa.J,Ikeda.S,Matsukura.F and Ohno.H,Appl.Phys.Lett.89,232510(2006).
[45]Wang.Y,Zeng.Z.M,Han.X.F,Zhang.X.G and Zhang.Z,Phys.Rev.B.75,214424(2007).
[46]Lee.Y.M,Hayakawa.J,Ikeda.S and Ohno.H,Appl.Phys.Lett.,90,212507(2007).
[47]Ikeda.S,Hayakawa.J,Ashizawa.Y,Lee.Y.M,Miura.K,Hasegawa.H,Tsunoda.M,Matsukura.F,and Ohno.H,Appl.Phys.Lett.93,082508(2008).
[48]Wang Jianguo,Cardoso.S,Freitas.P.P,Wei.P,Barradas.N.P and Soares.J.C J..AppL Phys.89,6868(2001).
[49]Song Jin-Oh,Lee Seong-Rae,J.Magn.Magn.Mater.310,1923(2007).
[50]Rhee.J.R,Hwang.J.Y,Kim.S.S,Kim.M.Y,Chun.B.S,Yoo.I.S,Oh.B.S,Kim.Y.K,Kim.T.W and Park.W.J,IEEE Trans.Magn.41,2685(2005).
[51]Ghosh.K,Ogale.S.B,Pai.S.P,Robson.M,Li.Eric,Jin.I,Dong Zi-wen,Greene.R.L,Ramesh.R,Venkatesan.T and Johnson.M,Appl.Phys.Lett.73,689(1998).
[52]De Teresa.J.M,Barthelemy.A,Fert.A,Contour.J.P,Lyonnet.R,Montaigne.F,Seneor.P and Vaures.A,Phys.Rev.Lett.82,4288(1999).
[53]O'Donnell.J,Andrus.A.E,Oh.S,Colla.E.V and Eckstein.J.N,Appl.Phys.Lett.76,1914(2000).
[54]Park Chando,Shi Yiming,Peng Yingguo,Barmak Katayun,Zhu Jian-Gang,Laughlin David E.and White Robert M.,IEEE Trans.Magn.39,2806(2003).
[55]Yoon Kap Soo,Koo Ja Hyun,Do Young Ho,Kim Ki Woong,Kim Chae Ok,Hong Jin Pyo,J.Magn.Magn.Mater.285,125(2005).
[56]KUBOTA Hitoshi,NAKATA Jun,OOGANE Mikihiko,ANDO Yasuo,SAKUMA Akimasa and MIYAZAKI Terunobu,Jpn.J.Appl.Phys.43,L984(2004).
[57]Daibou T.,Shinano M.,Hattori M.,Sakuraba Y.,Oogane M.,Ando Y.and Miyazaki T.,IEEE Trans.Magn.42,2655(2006).
[58]Marukame Takao,Ishikawa Takayuki,Matsuda Ken-ichi,Uemura Tetsuya and Yamamoto Masafumi,J.Appl.Phys.99,08A904(2006).
[59]Tezuka N.,Ikeda N.,Miyazaki A.,Okamura S.,Kikuchi M.,Sugimoto S.,Inomata K.,J.Magn.Magn.Mater.310,1940(2007).
[60]Marukame Takao,Ishikawa Takayuki,Hakamata Shinya,Matsuda Ken-ichi,Uemura Tetsuya and Yamamoto Masafumi,Appl.Phys.Lett.90,012508(2007).
[61]Rottlander P.,Hehn M.,Lenoble O.and Schuhl A.,Appl.Phys.Lett.78,3274(2001).
[62]Wang Jianguo,Freitas P.P.,Snoeck E.,Wei P.and Soares J.C.,Appl.Phys.Lett.79, 4387(2001).
[63]Wang Jianguo,Freitas P.P.and Snoeck E.,Appl.Phys.Lett.,2001,79:4553.
[64]Wang Jianguo,Freitas P.P.,Snoeck E.,Batlle X.and Cuadra J.,IEEE Trans.Magn..38,2703(2002).
[65]Dimopoulos T.,Gieres G.,Colis S.,Wecker J.,Luo Y.and Samwer K.,Appl.Phys.Lett.83,3338(2003).
[66]Yoshimura S.,Nozawa T.,Shoyama T.,Tsunoda M.and Takahashi M.,J.Appl.Phys.97,10C920(2005).
[67]Moodera J.S.,Hao X.,Gibson G.A.and Meservey R.,Phys.Rev.Lett.61,637(1988).
[68]Chiba D.,Akiba N.,Matsukura F.,Ohno Y.and Ohno H.,Appl.Phys.Lett..77,1873(2000).
[69]Guth M.,Dinia A.,Schmerber G.et al.,Appl.Phys.Lett.78,3487(2001).
[70]Lyu Pin and Moon Kyungsun,Phys.Rev.B.64,035201(2001).
[71]Gustavsson F.,George J-M.,Etgens V.H.and Eddrief M.,Phys.Rev.B.64,184422(2001).
[72]Jiang Xin,Panchula Alex F.and Parkin Stuart S.P.,Appl.Phys.Lett.,2003,83:5244.
[73]Jun Kyung-In,Lee J.H.,Shin K.-H.,Rhie K.,J.Magn.Magn.Mater.286,158(2005).
[74]Nagahama T.,Yuasa S.,Tamura E.and Suzuki Y.,Phys.Rev.Lett.95,086602(2005).
[75]Santos T.S.,Lee J.S.,Migdal P.,Lekshmi I.C.,Satpati B.and Moodera J.S.,Phys.Rev.Lett.98,016601(2007).
[76]Nagasaka K.,Seyama Y.,Kondo R.,Oshima H.,Shimizu Y.and Tanaka A.,Fujitsu Sci.Tech.J.37,192(2001).
[77]Tsunekawa Koji,Djayaprawira David D.,et.al.,Appl.Phys.Lett.87,072503(2005).
[78]Kasuya.T and A.Yanase,Rev,Mod.Phys.40,684(1968).
[79]Butler.W.H,Gupta.A Nature Mater.3,845(2004).
[80]Butler.W.H,Zhang.X.G,Schulthess.T.C and Maclaren J M Phys.Rev.B.63,054416(2001)
[81]Mathon.J and Umerski.A,Phys.Rev.B.63,220403(2001).
[82]Han X F,Wei H X,Peng Z L et al.,J.Mater.Sci.& Tech.23,304(2007).
[83]Han X F,Wen Z C and Wei X H.J.Appl.Phys.103,07E933(2008).
[84]Wei H X,He J,Wen Z C,Han X F,Zhan W S and Zhang S.Phys.Rev.B.77,134432(2008).
[85]Parkin S S,Phys.Rev.Let.67,3598(1991)
[86]现代磁性材料原理和应用,(美)R.C.奥汉德利,化学工业出版社,
[87]Chu J P,Lo C T,Pang Y K and Han B S,Appl.Phys.Lett.88,012510(2006).
[88]Jiang H,Chen Y J,Chen L F and Huai Y M,J.Appl.Phys.91,6871(2002).
[89]Zhong W D 1987 in Magnetism(Beijin:Seienee Press of China) P36(in Chinese)[钟文定1987铁磁学(北京:科学出版社)第36页]
[90]Fu Y,Cheng X F,and Yang Z,phys.stat.sol.(a.) 202,1150(2005).
[1]詹文山,物理,Vol,28,Iss,7,435(1998).
[2]Dresselhaus,M.S.,Dresselhaus,G.& Avouris,Ph(eds) Carbon Nanotubes(Springer,Berlin,2001).
[3]M.S.Purewal,B.H.Hong,A.Ravi,B.Chandra,J.Hone,and P.Kim,Phys.Rev.Lett.95,196808(2007).
[4]Luis E.Hueso,Jose.M.Pruneda,Valeria Ferrari,Gavin Burnell,Jose.P.Valdes-Herrera,Benjamin D.Simons,Peter B.Littlewood,Emilio Artacho,Albert Fert and Neil D.Mathur,Nature.445,410(2007).
[5]R.Skomski and J.M.D.Coey,Permanent Magnetism,Institute of Physics Publishing,Bristol,(1999).
[6]D.C.Ralph,M.D.Stiles,J.Magn.Magn.Mater.320(7),1190(2008).
[7]Katine.J.A,F.J.Albert,R.A.Buhrman,E.B.Myers,and D.Ralph,Phys.Rev.Lett.84,3149(2000).
[8]Koshihara,S.,A.Oiwa,M.Hirasawa,S.Katsumoto,Y.Iye,S.Urano,H.Takagi,and H.Munekata,Phys.Rev.Lett.78,4617(1997).
[9]Boukari,H.,P.Kossacki,M.Bertolini,D.Ferrand,J.Cibert,S.Tatarenko,A.Wasiela,J.A.Gaj,and T.Dietl,Phys.Rev.Lett.88,207204(2002).
[10]Oiwa.A,Y.Mitsumori.R Moriya,T.Supinski,and H.Mu-nekata,Phys.Rev.Lett.88,137202(2002).
[11]Ohno.H,D.Chiba,F.Matsukura,T.O.E.Abe,T.Dietl,Y.Ohno,and K.Ohtani,Nature.405,944(2000).
[12]Boukari.H,P.Kossacki,M.Bertolini,D.Ferrand,J.Cibert,S.Tatarenko,A.Wasiela,J.A.Gaj,and T.Dietl,Phys.Rev.Lett.88,207204(2002).
[13]Park.Y.D,A.T.Hanbicki,S.C.Erwin,C.S.Hellberg,J.M.Sullivan,J.E.Mattson,T.F.Ambrose,A.Wilson,G.Spanos,and B.T.Jonker,Science.295,651(2002).
[14]Fisher.M.E,Phys.Rev.Lett.19,169(1967).
[15]Mills.D.L,Phys.Rev.B.3,3887(1971).
[16]Falicov.L.M,D.T.Pierce,S.D.Bader,et al.,J.Mater.Res.5,1299(1990).
[2]S.Datta and B.Das,Appl.Phys.Lett.56,665(1990).
[3]N.F.Mott,Proc.R.Soc.London,Ser.A 153,699(1936).
[4]N.F.Mott,Proc.R.Soc.London,Ser.A 156,368(1936).
[5]Tedrow,P.M.,and R.Meservey,Phys.Rev.Lett.26,192(1971).
[6]Tedrow,P.M.,and R.Meservey,Phys.Rev.Lett.27,919(1971).
[7]Tedrow,P.M.,and R.Meservey,Phys.Rev.B 7,318(1973).
[8]Tedrow,P.M.,and R.Meservey,Phys.Rep.238,173(1994).
[9]Barthelemy A and Fert A,Phys.Rev.B.43,13124(1991).
[10]de Groot R A,Mueller F M,van Engen P G and Buschov K H,J.Appl.Phys.55,2151(1984).
[11]Johnson M and Silsbee R H,Phys.Rev.Lett.55,1790(1985).
[12]Valet T and Fert A,Phys.Rev.B.48,7099(1993).
[13]Yang Q,Lee S F,Henry L L,Lololee R,Schroeder P A,Pratt W P and Bass J,Phys.Rev.Lett.72,3274(1994).
[14]Fert A,Duvail J-L and Valet T,Phys.Rev.B.52,6513(1995).
[15]Elliott,R.J,Phys.Rev.96,266(1954).
[16]D'yakonov,M.I,and V.I.Perel',JETP Lett.13,144(1971).
[17]D'yakonov,M.I,and V.I.Perel',JETP Lett.13,467(1971).
[18]D'yakonov,M.I,and V.I.Perel',Sov.Phy.JETP.33,1053(1971).
[19]D'yakonov,M.I,and V.I.Perel',Sov.Phys.Solid State.13,3023(1971).
[20]Bir,G.L.,A.G.Aronov,and G.E.Pikus,Sov.Phys.JETP 42,705(1976).
[21]Prinz G A.Phys Today,45,58(1995).
[22]Kasuya,T,and A.Yanase,Rev.Mod.Phys.40,684(1968).
[23]Nagaev,E.L,1983,Physics of Magnetic Semiconductors(Mir,Moscow).
[24]Thomson.W,Proc.R.Soc.8,546(1857).
[25]Baibich M.N,Broto J.M,Fert A,Nguyen Van Dau,F Petroff,P.Eitenne,G.Creuzet,A.Friederich,and J.Chazelas Phys.Rev.Lett.61,2472(1988).
[26]Hartman.U,2000,Ed,Magnetic Multilayers and Giant Magnetoresistance(Springer,Berlin).
[27]Hirota,E,H.Sakakima and K.Inomata,2002,Giant MagnetoResistance Devices(Springer,Berlin).
[28]Parkin,S.S.P,2002,in Spin Dependent Transport in MagneticNanostructures,edited by S.Maekawa and T.Shinjo(Taylor and Francis,New York),pp.237-271.
[29]Pratt,W.P,Jr,S.E Lee,J.M.Slaughter,R.Loloee,P.A.Schroeder and J.Bass,Phys.Rev.Lett.66,3060(1991).
[30]Gijs,M.A.M,and G.E.W.Bauer,Adv.Phys.46,285(1997).
[31]Levy,P.M,and I.Mertig,2002,in Spin Dependent Transportin Magnetic Nanostructures, edited by S.Maekawa and T.Shinjo(Taylor and Francis,New York),pp.47-111.
[32]Mathon,J,and A.Umerski,Phys.Rev.B.56,11810(1997).
[33]Parkin,S.S.P,R.Bhadra and K.P.Roche,Phys.Rev.Lett.66,2152(1991).
[34]Parkin,S.S.P,Z.G.Li and D.J.Smith,Appl.Phys.Lett.55,2710(1991).
[35]Julliere M,Phys.Lett.54A,225(1975).
[36]Alvarado,S.F,Phys.Rev.Lett.75,513(1995).
[37]Mohri K,Kohzawa T,Yoshida H and Panina L V,IEEE Trans Magn..28,3150(1992).
[38]Daughton J,Brown J,Chen E,Beech R,Pohm A and Kude W.IEEE Trans Magn.30.4608(1994).
[39]Miyazaki,T,and N.Tezuka,J.Magn.Magn.Mater.139,L231(1995).
[40]Moodera,J.S,L.R.Kinder,J.Nowak,P.LeClair and R.Meservey,Appl.Phys.Lett.69,708(1996).
[41]Parkin,S.S.P,K.P.Roche,M.G.Samant,P.M.Rice,et al.,J.Appl.Phys.85,5828(1999).
[42]Tehrani.S,B.Engel,J.M.Slaughter,E.Chen,M.DeHerrera,M.Durlam,P,Naji,R.Whig,J.Janesky and J.Calder,IEEE Trans.Magn.36,2752(2000).
[43]Wang D,Nordman C,Daughton J M,Qian Z,Fink J,IEEE Trans Magn.40,2269(2004)
[44]Grunberg P A.Sensors and Actuators A.91,153(2001).
[45]G.A.Prinz.,Science.282,1660(1998).
[46]Butler W H and Gupta A.Nature Mater.3,845(2004).
[47]Parkin S S P,Kaiser C,Panchula A,et al.,Nature Mater.3,862(2004).
[48]Yuasa S,Nagahama T,Fukushima A,Suzuki Y,Ando K.Nature Mater.,3:868(2004).
[49]Tsunekawa K,Djayaprawira D D,Nagai M,Maehara H,Yamagata S,Watanabe N,Yuasa S,Suzuki Y,Ando K.Appl Phys Lett.87,072503(2005).
[50]Daughton J M.Thin Solid Films.216,162(1992).
[51]Brown J L and Pohm A V,IEEE Trans Components,Packaging,and Manufacturing Technology.PartA.17,373(1994).
[52]H.Ohno,Science.281,951(1998).
[53]Pearton,S.J.,C.R.Abernathy,M.E.Overberg,G.T.Thaler,D.P.Norton,N.Theodoropoulou,A.F.Hebard,Y.D.Park,F.Ren,J.Kim,and L.A.Boatner,J.Appl.Phys.93,1(2003).
[54]Dediu.V,M.Murgia,F.C.Matacotta,C.Taliani,and S.Bar-banera,Solid State Commun.122, 181(2002).
[55]Pejakovi.D.A,C.Kitamura,J.S.Miller,and A.J.Epstein,Phys.Rev.Lett.88,057202(2002).
[56]Epstein.A.J,MRS Bull.28,492(2003).
[57]Goldman.A.M,V.Va'sko,P.Kraus,K.Nikolaev,Magn.Mater.200,69(1999).
[58]Tsukagoshi.K,B.W.Alphenaar,and H.Ago,Nature.401,572(1999).
[59]Zhao.B,I.Mo "nch,H.Vinzelberg,T.Mu "hl,and C.M.Schneider,Appl.Phys.Lett.80,3144(2002).
[60]Kasuya.T,and A.Yanase,Rev.Mod.Phys.40,684(1968).
[61]Nagaev,E.L.,1983,Physics of Magnetic Semiconductors(Mir Moscow).
[62]T.Dietl,H.Ohno,F.Matsukura,J.Cibert,D.Ferrand,Science,287,1019(2000).
[63]Fumiyoshi Takano,Hiro Akinaga,Takashi Tokizaki,Shinji Kuroda and Koki Takita,Appl.Phys.Lett.83,2853(2003).
[64]Yoon shon,Young Hae Kwon,Sh.U.Yuldashev,Y.S.Park,D.J.Fu,D.Y.Kim,H.S.Kim,and T.W.Kang,J.Appl.Phys.93,1546(2003).
[65]R.K.Singh,Stephen Y.Wu,H.X.Liu,Lin Gu,David.I.Smith,and N.Newman,Appl.Phys.Lett.86,012504-1(2005).
[66]S.Venugopalan,L.A.Kolodziejski,R.L.Gunshor,and A.K.Rarndas,Appl.Phys.Lett.45,974(1984).
[67]H.Ohno,A.Shen,E Matsukura,A.Oiwa,A.Endo,S.Katsumoto,and Y.Lye,Appl.Phys.Lett.69,363(1996).
[68]T.Hanbicki,B.T.Jonker,G.Itskos,G.Kioseoglou,and A.Petrou,Appl.Phys.Left.80,1240(2002).
[69]Kai Chang,J.B.Xia,and F.M.Peeters,Appl.Phys.Lett.82,2661(2003).
[70]Jih-Jen Wu,Sai-Chang Liu,and Ming-Hsun Yang,Appl.Phys.Lett.85,1027(2004).
[71]Y.Fukuma,H.Asada,J.Miyashita,N.Nishimura,and T.Koyanagi,J.Appl.Phys.93,7667(2003).
[72]Y.Q.Chang,D.B.Wang,X.H.Luo,X.Y.Xu,X.H.Chen,L.Li,C.P.Chen,R.M.Wang,J.Xu,and D.P.Yu,Appl.Phys.Lett.83,4020(2003).
[73]S.Lee,D.Y.Shin,l.Titova,M.Kutrowski,M.Dobrowolska,and J.K.Furdyna,Appl.Phys.Lett.83,2865(2003).
[74]I.A.Buyanova,I.G.Ivanov,B.Monemar,W.M.Chen,A.A.Toropov,Ya.V.Terent'ev,S.V.Lebedev,S.V.Ivanov,and P.S.Kop'ev,Appl.Phys.Lett.81,2196(2002).
[75]Francesco Giazotto,Fabio Taddei,Rosario Fazio,and Fabio Beltram,Appl.Phys.Lett.82,2449(2003).
[76]A.B.Pakhomov,Bradley K.Roberts,and Kannan M.Krishnan,Appl.Phys.Lett.83,4357(2003).Zno co
[77]Nguyen Hoa Hong,Joe Sakai,and Awatef Hassini,Appl.Phys.Lett.84,2602(2004).
[78]S.Lee,K.Park,M.Dobrowolska,and J.K.Furdyna,J.Appl.Phys.95,7184(2004).
[79]C.B.Fitzgerald,M.Venkatesan,A.P.Douvalis,S.Huber,J.M.Coey,and T.Bakas,J.Appl.Phys.95,7390(2004)
[80]Norton,W.Tang,M.Stavola,J.M.Zavada,R.G.Wilson,Physica B.39,340(2003).
[81]Y.Fukuma,H.Asada,M.Arifuku,and T.Koyanagi,Appl.Phys.Lett.80,1013(2002).
[82]S.Lee,H.S.Lee,J.Y.Lee,M.Dobrowolska,and J.K.Furdyna,Appl.Phys.Lett.86,033114-1(2005).
[83]T.Yokota,N.Fujimura,T.Wada,S.Hamasaki,and T.Ito,J.Appl.Phys.91,7905(2002).
[84]H.Saito,W.Zaets,S.Yamagata,Y.Suzuki,and K.Ando,J.Appl.Phys.91,8085(2002).
[85]K.W.Edmonds,N.R.S.Farley,T.K.Johal,R.P.Campion,B.L.Gallagher,C.T.Foxon,and G.van der Laan,J.Appl.Phys.95,7166(2004).
[86]S.S.A.Seo,T.W.Nob,Y.-W.Kim,J.D.Lim,Y.D.Park,Y.S.Kim,Z.G.Khim,H.C.Jeon,T.W.Kang,and S.J.Pearton,J.Appl.Phys.95,8172(2004).
[87]Lee,Y.D.Park,Z.G.Khim,J.Kim,and F.Ren,Appl.Phys.Lett.80,3964(2002).
[88]M.Bouloudenine,N.Viart,S.Colis,J.Kortus and A.Dinia,Appl.Phys.Lett.87,052501(2005).
[1]冯端,金国钧,凝聚态物理学,高等教育出版社(2002).
[2]姜寿亭,李卫,凝聚态磁性物理,科学出版社(2003).
[3]戴道生,钱坤明,铁磁学上册,科学出版社(1998).
[4]S.Chikazumi,Physics of Ferromagnetism,Cambrige Press(1997).
[5]冯端,金属物理学,第四卷,科学出版社(1998).
[6]R.OHandley,Modern Magnetic Materials,John Wiley & Sons(2000).
[7]R.Becket and W.Drring,Ferromagnetism,Springer,Berlin(1939).
[8]近角聪信箸,葛世惠译,铁磁性物理,兰州大学出版社(2002).
[9]钟文定,铁磁学中册,科学出版社(1998).
[10]近角聪信箸,韩俊德,杨膺善译,磁性体手册,冶金工业出版社(1985).
[11]J.A.C.Bland,B.Heinrich,Ultrathin Magnetic Structures,Springer-Verlag,Berlin Heidelberg(2005).
[12]M.T.Johnson,P.J.H.Bloemen,F.J.A.den Broeder and J.J.de Vries,Rep.Prog.Phys.59,1409(1996).
[13lB.Heinrich,J.F.Cochran,Advances in Physics.42,523(1993).
[14]B.Schulz,K.Baberschke,Phys.Rev.B.50,13467(1994).
[15]B.Schulz,R.Schwarzwald,K.Baberschke,Surface Science.307,1102(1994).
[16]K.Amemiya,E.Sakai,D.Matsumura,H.Abe,T.Ohta,T.Yokoyama,Phys.Rev.B.71,214420(2005).
[17]F.J.Himpsel,J.E.Ortega,G.J.Mankey,R.F.Willis,Advances in Physics.47,511(1998).
[18]M.Farle,B.Mirwald-Schulz,A.N.Anisimov,W.Platow,K.Baberschke,Phys.Rev.B.55,3708(1997).
[19]Introduction to.the Theory of Ferromagnetism,A.Aharoni,Oxford University Press(2000).
[20]G.Bertotti,Hysteresis in Magnetism,Academic Press(1998).
[21]C.de Julian Fernandez,Phys.Rev.B.72,054438(2005).
[22]K.Zakeri,T.Kebe,J.Lindner and M.Farle,Phys.Rev.B.73,052405(2006).
[23]S.X.Wang,A.M.Taratorin,Magnetic Information Storage Technology,Academic Press(1998).
[24]F.Matsukura,H.Ohno and T.Dietl,Hand book of Magnetic Materials,14(Elsevier,Amsterdam,2002).
[25]Special issue:Semiconductor Spintronics in J.Semicond.Sci.Technol,17 275-403(2002).
[26]R.A.de Groot,F.M.Mueller,P.G.van Engen and K.H.J.Buschow,Phys.Rev.Lett.50,2024(1983).
[27]R.J.Soulen Jr.,J.M.Byers,M.S.Osofsky,et.al.,Science.282,85(1988).
[28]H.Kato,T.Okuda,Y.Okimoto,Y.Tomioka,K.Oikawa,T.Kamiyama and Y.Tokura,Phys.Rev.B 69,184412(2004).
[29]H.Ohno,H.Munekata,T.Penney,S.von Molnar,L.L.Chang,Phys.Rev.Lett.68,2664(1992).
[30]H.Ohno,A.Shen,F.Matsukura,A.Oiwa,A.Endo,S.Katsumoto and Y.Iye,Appl.Phys.Lett.69,363(1996).
[31]S.A.Wolf,D.D.Awschalom,R.A.Buhrman,J.M.Daughton,S.von Molnar,M.L.Roukes,A.Y.Chtchelkanova and D.M.Treger,Science.294,1488(2001).
[32]H.Akai and P.H.Dederichs,Phys.Rev.B.47,8739(1993).
[33]H.Akai,Department of Physics,Graduate School of Science,Osaka University,Machikaneyama 1-1,Toyonaka 560-0043,Japan,akai@phys.sci.osaka-u.ac.jp(2000)
[34]A.I.Liechtenstein et al.,J.Magn.Magn.Matter.67,65(1987).
[35]K.Sato,P.H.Dederichs and H.Katayama-Yoshida,Europhys.Lett.61,403(2003).
[36]K.Sato,P.H.Dederichs,H.Katayama-Yoshida and J.Kudrnovsky,J.Phys.Condens.Matt.16,S5491(2004).
[37]H.Akai,Phys.Rev.Lett.81,3002(1998).
[1]郑伟涛,薄膜材料与薄膜技术,北京:化学工业出版社(2004).
[2](U|¨).(O|¨)zg(u|¨)r,A.Teke,et al,J.Appl.Phys.98,041301(2005)
[3]D.C.Look,D.C.Reynolds,J.W.Hemski,R.L.Jones and J.R.Sizelove,Appl.Phys.Lett.75,811(1999).
[4]A.Y.Polyakov,et al,J.Appl.Phys.94,2895(2003).
[5]S.O.Kucheyev,J.S.Williams,C.Jagadish,J.Zou,C.Evans,A.J.Nelson andA.V.Hamza,Phys.Rev.B.67,094115(2003).
[6]F.Hamdani,et al.,J.Appl.Phys.83,983(1998).
[7]T.Dietl,H.Ohno,EMatsukura et al,Science.287,1019(2000).
[8]A.B.Pakhomov,Bradley,K.Roberts et al,Appl.Phys.Lett.83,4357(2003).
[9]S.G.Yang,A.B.Pakhomov et al,IEEE Trans.Magn.38,2877(2002).
[10]Sejoon Lee,Hye Sung Lee et al,Mat.Res.Soc.Symp.Proc.825E(2004).
[11]Y.Q.Chang,D.B.Wang et al,Appl.Phys.Lett.83,4020(2003).
[12]Jin-Jen.Wu,Sai-Chang Liu et.al,Appl.Phys.Lett.85,1027(2004).
[13]J.Okabayashi,k.Ono,et al,J.Appl.Phys.95,3573(2004).
[14]S.W.Yoon,S.B.Cho et al,J.Appl.Phys.93,7879(2003).
[15]K.Rode,A.Anane et al,J.Appl.Phys.93,7676(2003).
[16]J.H.shim,T.Hwang et al,Appl.Phys.Lett.86,082503(2005).
[17]D.C.Reynolds,C.W.Litton et al,J.Appl.Phys.95,4802(2004).
[18]黄传真,艾兴等,材料导报,vol.611,Iss.3(1997).
[19]Z.R.Tian,W.Tong,J.Y.Wang,N.G.Duan,V.V.Krishnan and S.L.Suib,Science.276,926(1997).
[20]T.M.Whitney,J.S.Jiang,P.C.Searson and C.L.Chien,Science.261,1316(1993).
[21]R.L.Fleiser,P.B.Price,et al.,"Nuclear Tracks in Solids",University of California Press,Berkeley(1975).
[22]J.C.Hulteen and C.R.Martin,"Nanoparticles and Nanostructured Films",Wiley-Vch,(1998).
[23]A.Encinas-Oropesa,M.Demand L.Piraux,I.Huynen and U.Ebels,Phys.Rev.B.63,104415(2001).
[24]U.Ebels,J.L.Duvail,P.E.Wigen,L.Piraux,L.D.Buda and K.Ounadjelal,Phys.Rev.B.64,14421(2001).
[25]Y.Henry and A.Iovan,J.M.George,L.Piraux,Phys.Rev.B.66,184430(2002).
[26]R.Ferre,K.Ounadjela,J.M.George,L.Piraux and S.Dubois,Phys.Rev.B.56,14066(1997).
[27]C.A.Huber,T.E.Huber,M.Sadoqi,J.A.Lubin,S.Manalis,C.B.Prater,Science.263,800(1993).
[28]J.O.Bockris,R.E.White,B.E.Conway,Modem Aspects of Electrochemistry,New York Plenum Press(1989).
[29]F.Keller,M.S.Hunter et al,J.Electrochem.Soc.100,411(1953)
[30]M Zheng,L Zhang,X Zhang et al.,Chem.Phys.Lett.334,298(2001).
[31]Z.K.Wang,M.H.Kuok,S.C.Ng,D.J.Lockwood,M.G.Cottam,K.Nielsch,R.B.Wehrspohn and U.G(o|¨)sele,Phys.Rev.Lett.89,027201(2002).
[32]M.Zheng,L.Menon,H.Zeng,Y.Liu,S.Bandyopadhyay,R.D.Kirby and D.J.Sellmyer,Phys.Rev.B.62,12282(2000).
[33]H.Zeng,R.Skomski,L.Menon,Y.Liu,S.Bandyopadhyay and D.J.Sellmyer,Phys.Rev.B.65,134426(2002).
[34]A.Kumar,S.F(a|¨)hler,H.Schl(o|¨)rb,K.Leistner and L.Schultz,Phys.Rev.B.73,064421(2006).
[35]X.Y.Zhang,G.H.Wen,Y.F.Chan,R.K.Zheng,X.X.Zhang and N.Wang,Appl.Phys.Lett..83,3341(2003).
[36]J.Mallet,K.Y.Zhang,C.L.Chien,T.S.Eagleton and P.C.Searson,Appl.Phys.Lett.84,3900(2004).
[37]Y.C.Sui,R.Skomski,K.D.Sorge,and D.J.Sellrnyer,Appl.Phys.Lett.84,1525(2004).
[38]Q.F.Zhan,Z.Y.Chen,D.S.Xue,and F.S.Li,Phys.Rev.B.66,134426(2002).
[39]Q.F.Liu,J.B.Wang,Z.J.Yan and D.S.Xue,Phys.Rev.B.72,14412(2005).
[40]N.Yasui A.Imada and T.Den,Appl.Phys.Lett.83,3347(2003).
[41]N.R.B.Coleman,N.O.Sullivan,K.M.Ryan,T.A.Crowley,M.A.Morris,T.R.Spalding,D.C.Steytler,J.D.Holmes,J.Am.Chem.Soc.123,7010(2001).
[42]P.M.Ajayan,O.Stephan,Ph Redilich,C.Colliex,Nature,375,564(1995).
[43]J.Sloan,D.V.Wright,H.G.Hoo,Chem.Commun.8,699(1999).
[44]A.Govinaarai,B.C.Satishkumar,M.Nath,C.N.R.Rao,Chem.Mater 12,202(2000).
[45]D.Zhou and S.Seraphin,Chem.Phys.Lett.222,233(1994).
[46]H.J.Dai,E.W.Wong,C.M.Lieber,Nature,375,769(1995).
[47]W.Han,S.Fan,Q.Li,Y.Hu,Science.277,1287(1997).
[48]C.Tang,S.Fan,M.L.D Chapelle,H.Dang,P.Li,Adv.Mater 12,1346(2000).
[49]Y.Li,G.W.Meng et al,Appl.Phys.Lett.76,2011(2000).
[50]李树棠,金属X射线衍射与电子显微分析技术,冶金工业出版社(1980).
[51]王培铭,许乾慰,材料研究方法,科学出版社(2005).
[52]J.B.Cui,U.J.Gibson et al,Appl.Phys.Lett.87,133108(2005).
[53]赵同云,磁性测量讲座(2004).
[54]李培森,物性测量原理与测试分析方法,兰州大学出版社(1997).
[1]Julliere M,Phys.Lett.54A:225(1975).
[2]Baibich M.N,Broto J.M,Fert A,Nguyen Van Dau F and Petroff.F,Phys.Rev.Lett.,61, 2472(1988).
[3]Prinz Gary A,Science.282,1660(1998).
[4]Maekawa.S,and Gafvert.U,IEEE Trans.Magn.18,707(1982).
[5]Suezawa.Y.and Gondo.Y,J.Magn.Magn.Mater.126,524(1993).
[6]Nakatani.R and Kitada M,J.Mater.Sci.Lett.10,827(1991).
[7]Miyazaki.T,Yaoi T.and Ishio S,J.Magn.Magn.Mater.98,L7(1991).
[8]Nowak.J and Ranluszkiewicz.J,J.Magn.Magn.Mater.109,79(1992).
[9]Yaoi.T,Ishio.S and Miyazaki.T,J.Magn.Magn.Mater.126,430(1993).
[10]Plaskett T S,Freitas P.P,Barradas N.P,da Silva M.F.and Soares J.C,J.Appl.Phys,76,6104(1994).
[11]Tezuka N,Ando Y and Miyazaki T,J.Magn.Soc.Jpn,19,369(1995).
[12]Miyazaki.T and Yezuka.N,J.Magn.Magn.Mater.139,L231(1995).
[13]Miyazaki.T and Yezuka.N,J.Magn.Magn.Mater.151,403(1995).[
14]Moodera.J.S,Kinder.L.R,Wong.T.M and Meservey.R,Phys.Rev.Lett.74,3273(1995).
[15]Moodera.J.S,Kinder.L.R,J.Appl.Phys.79,4724(1996).
[16]Moodera.J.S,Kinder.L.R,Nowak.J,Leclair.P and Meservey.R,Appl.Phys.Lett.69,708(1996).
[17]Lu Yu,Li.X.W,Gong.G.Q,Xiao Gang,Gupta.A,Lecoeur P,Sun.J.Z,Wang.Y.Y and Dravid.V.P,Phys.Rev.B.54,R8357(1996).
[18]Platt.C.L,Dieny.B and Berkowitz.A.E,Appl.Phys.Lett.,69,2291(1996).
[19]Gallager.W.J,Parkin.S.S.P,Lu.Y,Bian.X.P,Marley.A,Altman.R.A,Rishton.S.A,Roche.K.P,Jahnes.C,Shaw.T.M and Xiao.G,J.Appl.Phys.81,3741(1997).
[20]Platt.C.L,Dieny.B and Berkowitz.A.E,J.Appl.Phys.81(8),5523(1997).
[21]Sato.M and Kobayashi.K,IEEE Trans.Magn.33,3553(1997).
[22]Sun.J.J,Sousa.R.C,Galvao.T.T.P,Soares.V,Plaskett.T.S and Freitas.P.P,J.Appl.Phys.83,6694(1998).
[23]Sousa.R.C,Sun.J.J,Soares.V,Freitas.P.P,Kling.A,da Silva.M.F and Soares.J.C,Appl.Phys.Lett.73,3288(1998).
[24]Sun.J.J,Soares.V and Freitas.P.P,Appl.Phys.Lett.74,448(1999).
[25]Cardoso.S,Gehanno.V,Ferreira.R and Freitas.P.P,IEEE Trans.Magn.35,2952(1999).
[26]Cardoso.S,Freitas.P.P,de Jesus.C,Wei.P and Soares J.C,Appl.Phys.Lett.76,610(2000).
[27]Kikuchi.H,Sato.M and Kobayashi.K,J.Appl.Phys.87(9),6055(2000).
[28]Han Xiu-Feng,Daibou Tadaomi,Kamijo Makoto,Yaoita Kazuya,Kubota Hitoshi,Ando Yasuo and Miyazaki Terunbodu,Jpn.J.Appl.Phys.39,L439(2000).
[29]Yuasa.S,Sato.T,Tamura.E,Suzuki.Y,Yamamori.H,Ando.K and Katayama.T,Europhys.Lett.52(3),344(2000).
[30]Mathon.J and Umerski.A,Phys.Rev.B.63,220403(R)(2001).
[31]Butler.W.H,Zhang.X.-G and Schulthess.T.C,Phys.Rev.B.63,054416(2001).
[32]Faure-Vincent.J,Tiusan.C,Jouguelet.E,Canet.F,Sajieddine.M,Bellouard.C,Popova.E,Hehn.M,Montaigne.F and Schuhl.A,Appl.Phys.Lett.82,4507(2003).
[33]Yuasa.Shinji,Fukushima.Akio,Nagahama.Taro,Ando.Koji and Suzuki Yoshishige,Jpn.J.Appl.Phys.43,L588(2004).
[34]Yuasa.Shinji Nagahama.Taro,Fukushima.Akio,Suzuki Yoshishige and Ando Koji,Nature Materials.3,868(2004).
[35]Parkin.S.S.P,Kaiser.C,Panchula.A,Rice.P.M,Hughes.B,Samant.M and Yang.S.-H,Nature Materials.3,862(2004).
[36]Zhang.X.-G and Butler.W.H,Phys.Rev.B.70,172407(2004).
[37]Djayaprawira.D.D,Tsunekawa.K,Nagai.M,Maehara.H,Yamagata.S,Watanabe N,Yuasa S,Suzuki Y and Ando K,Appl.Phys.Lett.86,092502(20050.
[38]Wang.Dexin,Nordman.Cathy,Daughton.James.M,Qian.Zhenghong and Fink.Jonathon,IEEE Trans.Magn.,40(4),2269(2004).
[39]Wei.H.X,Qin.Q.H,Ma.M,Sharif.R and Hart X.F,J.Appl.Phys.101,09B501(2007).
[40]Coey.M,Nature Materials.4,9(2005).
[41]Yuasa Shinji,Fukushima Akio,Kubota Hitoshi,Suzuki Yoshishige and Ando Koji,Appl.Phys.Lett.89,042505(2006).
[42]Ikeda S.,Hayakawa J.,Lee Y.M.,Tanikawa T.,Matsukura F.and Ohno H.,J.Appl.Phys.,99,08A907(2006).
[43]Lee.Y.M,Hayakawa.J,Ikeda.S and Ohno.H,Appl.Phys.Lett.89,042506(2006).
[44]Hayakawa.J,Ikeda.S,Matsukura.F and Ohno.H,Appl.Phys.Lett.89,232510(2006).
[45]Wang.Y,Zeng.Z.M,Han.X.F,Zhang.X.G and Zhang.Z,Phys.Rev.B.75,214424(2007).
[46]Lee.Y.M,Hayakawa.J,Ikeda.S and Ohno.H,Appl.Phys.Lett.,90,212507(2007).
[47]Ikeda.S,Hayakawa.J,Ashizawa.Y,Lee.Y.M,Miura.K,Hasegawa.H,Tsunoda.M,Matsukura.F,and Ohno.H,Appl.Phys.Lett.93,082508(2008).
[48]Wang Jianguo,Cardoso.S,Freitas.P.P,Wei.P,Barradas.N.P and Soares.J.C J..AppL Phys.89,6868(2001).
[49]Song Jin-Oh,Lee Seong-Rae,J.Magn.Magn.Mater.310,1923(2007).
[50]Rhee.J.R,Hwang.J.Y,Kim.S.S,Kim.M.Y,Chun.B.S,Yoo.I.S,Oh.B.S,Kim.Y.K,Kim.T.W and Park.W.J,IEEE Trans.Magn.41,2685(2005).
[51]Ghosh.K,Ogale.S.B,Pai.S.P,Robson.M,Li.Eric,Jin.I,Dong Zi-wen,Greene.R.L,Ramesh.R,Venkatesan.T and Johnson.M,Appl.Phys.Lett.73,689(1998).
[52]De Teresa.J.M,Barthelemy.A,Fert.A,Contour.J.P,Lyonnet.R,Montaigne.F,Seneor.P and Vaures.A,Phys.Rev.Lett.82,4288(1999).
[53]O'Donnell.J,Andrus.A.E,Oh.S,Colla.E.V and Eckstein.J.N,Appl.Phys.Lett.76,1914(2000).
[54]Park Chando,Shi Yiming,Peng Yingguo,Barmak Katayun,Zhu Jian-Gang,Laughlin David E.and White Robert M.,IEEE Trans.Magn.39,2806(2003).
[55]Yoon Kap Soo,Koo Ja Hyun,Do Young Ho,Kim Ki Woong,Kim Chae Ok,Hong Jin Pyo,J.Magn.Magn.Mater.285,125(2005).
[56]KUBOTA Hitoshi,NAKATA Jun,OOGANE Mikihiko,ANDO Yasuo,SAKUMA Akimasa and MIYAZAKI Terunobu,Jpn.J.Appl.Phys.43,L984(2004).
[57]Daibou T.,Shinano M.,Hattori M.,Sakuraba Y.,Oogane M.,Ando Y.and Miyazaki T.,IEEE Trans.Magn.42,2655(2006).
[58]Marukame Takao,Ishikawa Takayuki,Matsuda Ken-ichi,Uemura Tetsuya and Yamamoto Masafumi,J.Appl.Phys.99,08A904(2006).
[59]Tezuka N.,Ikeda N.,Miyazaki A.,Okamura S.,Kikuchi M.,Sugimoto S.,Inomata K.,J.Magn.Magn.Mater.310,1940(2007).
[60]Marukame Takao,Ishikawa Takayuki,Hakamata Shinya,Matsuda Ken-ichi,Uemura Tetsuya and Yamamoto Masafumi,Appl.Phys.Lett.90,012508(2007).
[61]Rottlander P.,Hehn M.,Lenoble O.and Schuhl A.,Appl.Phys.Lett.78,3274(2001).
[62]Wang Jianguo,Freitas P.P.,Snoeck E.,Wei P.and Soares J.C.,Appl.Phys.Lett.79, 4387(2001).
[63]Wang Jianguo,Freitas P.P.and Snoeck E.,Appl.Phys.Lett.,2001,79:4553.
[64]Wang Jianguo,Freitas P.P.,Snoeck E.,Batlle X.and Cuadra J.,IEEE Trans.Magn..38,2703(2002).
[65]Dimopoulos T.,Gieres G.,Colis S.,Wecker J.,Luo Y.and Samwer K.,Appl.Phys.Lett.83,3338(2003).
[66]Yoshimura S.,Nozawa T.,Shoyama T.,Tsunoda M.and Takahashi M.,J.Appl.Phys.97,10C920(2005).
[67]Moodera J.S.,Hao X.,Gibson G.A.and Meservey R.,Phys.Rev.Lett.61,637(1988).
[68]Chiba D.,Akiba N.,Matsukura F.,Ohno Y.and Ohno H.,Appl.Phys.Lett..77,1873(2000).
[69]Guth M.,Dinia A.,Schmerber G.et al.,Appl.Phys.Lett.78,3487(2001).
[70]Lyu Pin and Moon Kyungsun,Phys.Rev.B.64,035201(2001).
[71]Gustavsson F.,George J-M.,Etgens V.H.and Eddrief M.,Phys.Rev.B.64,184422(2001).
[72]Jiang Xin,Panchula Alex F.and Parkin Stuart S.P.,Appl.Phys.Lett.,2003,83:5244.
[73]Jun Kyung-In,Lee J.H.,Shin K.-H.,Rhie K.,J.Magn.Magn.Mater.286,158(2005).
[74]Nagahama T.,Yuasa S.,Tamura E.and Suzuki Y.,Phys.Rev.Lett.95,086602(2005).
[75]Santos T.S.,Lee J.S.,Migdal P.,Lekshmi I.C.,Satpati B.and Moodera J.S.,Phys.Rev.Lett.98,016601(2007).
[76]Nagasaka K.,Seyama Y.,Kondo R.,Oshima H.,Shimizu Y.and Tanaka A.,Fujitsu Sci.Tech.J.37,192(2001).
[77]Tsunekawa Koji,Djayaprawira David D.,et.al.,Appl.Phys.Lett.87,072503(2005).
[78]Kasuya.T and A.Yanase,Rev,Mod.Phys.40,684(1968).
[79]Butler.W.H,Gupta.A Nature Mater.3,845(2004).
[80]Butler.W.H,Zhang.X.G,Schulthess.T.C and Maclaren J M Phys.Rev.B.63,054416(2001)
[81]Mathon.J and Umerski.A,Phys.Rev.B.63,220403(2001).
[82]Han X F,Wei H X,Peng Z L et al.,J.Mater.Sci.& Tech.23,304(2007).
[83]Han X F,Wen Z C and Wei X H.J.Appl.Phys.103,07E933(2008).
[84]Wei H X,He J,Wen Z C,Han X F,Zhan W S and Zhang S.Phys.Rev.B.77,134432(2008).
[85]Parkin S S,Phys.Rev.Let.67,3598(1991)
[86]现代磁性材料原理和应用,(美)R.C.奥汉德利,化学工业出版社,
[87]Chu J P,Lo C T,Pang Y K and Han B S,Appl.Phys.Lett.88,012510(2006).
[88]Jiang H,Chen Y J,Chen L F and Huai Y M,J.Appl.Phys.91,6871(2002).
[89]Zhong W D 1987 in Magnetism(Beijin:Seienee Press of China) P36(in Chinese)[钟文定1987铁磁学(北京:科学出版社)第36页]
[90]Fu Y,Cheng X F,and Yang Z,phys.stat.sol.(a.) 202,1150(2005).
[1]詹文山,物理,Vol,28,Iss,7,435(1998).
[2]Dresselhaus,M.S.,Dresselhaus,G.& Avouris,Ph(eds) Carbon Nanotubes(Springer,Berlin,2001).
[3]M.S.Purewal,B.H.Hong,A.Ravi,B.Chandra,J.Hone,and P.Kim,Phys.Rev.Lett.95,196808(2007).
[4]Luis E.Hueso,Jose.M.Pruneda,Valeria Ferrari,Gavin Burnell,Jose.P.Valdes-Herrera,Benjamin D.Simons,Peter B.Littlewood,Emilio Artacho,Albert Fert and Neil D.Mathur,Nature.445,410(2007).
[5]R.Skomski and J.M.D.Coey,Permanent Magnetism,Institute of Physics Publishing,Bristol,(1999).
[6]D.C.Ralph,M.D.Stiles,J.Magn.Magn.Mater.320(7),1190(2008).
[7]Katine.J.A,F.J.Albert,R.A.Buhrman,E.B.Myers,and D.Ralph,Phys.Rev.Lett.84,3149(2000).
[8]Koshihara,S.,A.Oiwa,M.Hirasawa,S.Katsumoto,Y.Iye,S.Urano,H.Takagi,and H.Munekata,Phys.Rev.Lett.78,4617(1997).
[9]Boukari,H.,P.Kossacki,M.Bertolini,D.Ferrand,J.Cibert,S.Tatarenko,A.Wasiela,J.A.Gaj,and T.Dietl,Phys.Rev.Lett.88,207204(2002).
[10]Oiwa.A,Y.Mitsumori.R Moriya,T.Supinski,and H.Mu-nekata,Phys.Rev.Lett.88,137202(2002).
[11]Ohno.H,D.Chiba,F.Matsukura,T.O.E.Abe,T.Dietl,Y.Ohno,and K.Ohtani,Nature.405,944(2000).
[12]Boukari.H,P.Kossacki,M.Bertolini,D.Ferrand,J.Cibert,S.Tatarenko,A.Wasiela,J.A.Gaj,and T.Dietl,Phys.Rev.Lett.88,207204(2002).
[13]Park.Y.D,A.T.Hanbicki,S.C.Erwin,C.S.Hellberg,J.M.Sullivan,J.E.Mattson,T.F.Ambrose,A.Wilson,G.Spanos,and B.T.Jonker,Science.295,651(2002).
[14]Fisher.M.E,Phys.Rev.Lett.19,169(1967).
[15]Mills.D.L,Phys.Rev.B.3,3887(1971).
[16]Falicov.L.M,D.T.Pierce,S.D.Bader,et al.,J.Mater.Res.5,1299(1990).
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |