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并五苯性质的研究及其场效应晶体管的研制
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摘要
有机场效应晶体管(Organic Field Effect Transistors,OFETs)是以有机半导体材料为有源层的晶体管器件,和传统的无机半导体器件相比,具有成本低、可实现大面积加工、可与柔性基底集成等优点,因此在世界范围内引起了广泛关注。经过二十几年的发展,OFETs的研究已取得了重大的进展。OFETs的迁移率、开关电流比等性能参数已达到或超过非晶硅(α-Si:H)晶体管器件的水平,是各种各样的要求低成本、大面积的商业电子应用领域极具吸引力的技术,如智能卡、传感器、射频标识、平板显示等领域。因此,OFETs具有重要的研究价值。
     本学位论文首先综述了有机电子学的发展概况,介绍了有机电子器件中几种关键的器件如有机发光器件(OLED),有机光电探测器,有机单分子器件,有机传感器等,重点讲述了OFETs的发展概况、目前现状以及存在的问题等。
     尝试寻找合适的有机溶剂溶解并五苯并制备并五苯薄膜,有机溶剂邻-二氯苯在加热的条件下能够将并五苯溶解,然后在不同温度下,在单晶硅片和氧化硅片表面制备并五苯薄膜,通过XRD、光学显微镜、AFM、SEM、紫外-可见吸收光谱等手段进行表征,最后得出在100℃时能形成较均匀一致的并五苯薄膜。
     介绍了OFETs的几种器件结构形式,比较了每种结构的优缺点。在此基础上,分别综述和讨论了OFETs器件制备中的各种材料,包括有机半导体材料、电介质绝缘材料、电极材料以及衬底材料的使用情况。进一步阐述了有机半导体中载流子的传输理论,传输模型以及金属/有机半导体接触的情况。有机半导体也有P型和N型之分,只是原理和无机半导体的不同。
     自行合成了并五苯材料,并通过红外吸收光谱、质谱、元素分析、紫外-可见吸收光谱等方式进行表征。用真空蒸镀的方法在SiO_2表面制备并五苯薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)等对其进行测试。成功的研制出了并五苯有机场效应晶体管,得出较好的电流-电压特性,并比较选择出制备并五苯OFETs薄膜的较好条件。
     研制了全有机场效应晶体管,以ITO玻璃为栅基底,以聚酰亚胺为绝缘层,采用底电极结构制备全有机场效应晶体管。在制备的过程中,绝缘层聚酰亚胺是通过旋涂的方法制备的,同时还要注意它的烘干过程中有不同的温度和时间要求。制备出表面较平滑的聚酰亚胺层是研制出具有较好特性全有机场效应晶体管的关键步骤之一。
Organic Thin Film transistors (OFETs) are transistors device using organic semiconductor materials as active layers, and have got various interesting from scientist and industry. Compared with common inorganic transistors, they have two distinct advantages: low cost over a large area and low temperature fabrication on a flexible substrate. The thought of put the organic semiconductor as the active layer of the organic fhin film transistors started at 1970. Untill 1986, the first OFETs was fabricated. After more than 20 years development, there are has many evolutions of OFETs. The charge carrier mobility and on/off current ratio of the OFETs could achive the a-Si:H FETs. It is the most intresting of the low cost and flexbilty flat panel displays,such as electronic papers, radio frequency identification tags, sensors and smart cards.
     We successly found the solution process of pentacene thin films from organic solvent O-dichlorobenzene. The pentacene thin films obtained from different conditions were characterized by X-ray diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), and UV-vis spectroscopy. The result shows that the pentacene solution was successfully obtained at a minimum temperature of 40℃. The optimum temperature of forming pentacene thin films was 100℃.
     Firstly, it summarizes the general evolution history of organic electronics, introduces several key devices of organic electronic devices, such as OLED, organic unimolecular electronic, organic sensor, et al., their development and actuality. Review 20 years history of OFETs, introduce organic integrate circuit, discuss problem of OFETs, and present research hotspot of OFETs.
     Four device structures are introduced. The advantages and disadvantages of such structures are also discussed. Then, we sum up the applications of all kinds of OFET materials, inclouding organic semiconductor, dielectrical materials, electrode materials, substrate materials and so on. The theory of charge transport, the charge transport model and the contact of metal/semiconductor were disscused. There were also have P-type and N-type organic semiconductor.
     We have successfully synthesized the pentacene, and characterized it by infrared absorption spectra (IRAS), mass spectra (MS), element analysis, x-ray diffraction (XRD) and atom force microscopy (AFM). The pentacene is insoluble and cannot be characterized with NMR-spectroscopy. The pentacene OFETs have been fabricated.
     We used the ITO-glass as the substrate, used the polymide as the dielectrical layer fabricated the all organic semiconductor field effect transistors, and received better C-V curves.
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