BSO基光寻址空间光调制器的特性研究
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摘要
光子的并行运算能力及玻色子特性使得并行光计算成为未来取代电子计算的新型高性能计算技术之一。在并行光计算系统、光学目标识别系统等二维并行光信息处理系统中,高性能的光寻址空间光调制器是系统的核心组成单元。
BSO为代表的光折变晶体具有独特的光电及电光效应特性,融体全息存储、多波耦合及混频、全光开关、波长转换、非相干—相干转换等多种功能为一体。以此类材料为单一工作介质的光寻址空间光调制器,可兼有光电探测及电光调制功能运用于二维光信息处理系统。BSO晶体具有很好的光谱灵敏度及响应速度,以及独特的晶格结构和电光/光电参数,三个主轴方向上相等的线性电光系数便于简化分析,基于该晶体的光寻址空间光调制器的研究结果对于基于其它光折变晶体的光寻址空间光调制器的研究具有很重要的参考价值。
在二维并行光信息处理的实际应用中,光寻址空间光调制器调制传递函数的空间频率响应及工作速度两个特性至关重要。本文以BSO基非对称反射式光寻址空间光调制器作为研究对象,着重对密切关系其调制传递函数空间频率响应特性及工作速度的部分影响因素进行深入的理论及实验分析。
采用制备的BSO基非对称反射式光寻址空间光调制器进行了图像写入和读出实验分析,在此基础上结合带传输理论模型,对所获得的BSO晶体薄片光电损伤进行分析,获得在写入过程中BSO晶体薄片内的电荷迁移及最终电荷分布基本规律。结合理论数值模拟及实验分析,对BSO基非对称反射式光寻址空间光调制器调制传递函数的空间频率响应进行了深入的分析和讨论,得到部分材料特性、结构参数及工作条件等因素对调制传递函数空间频率响应的内在影响原理和规律。对光电损伤的研究还获得了有关晶体生长的部分重要信息,发现了电荷迁移时晶体内出现的类趋肤效应现象。
本文还对BSO基非对称反射式光寻址空间光调制器在实际应用中的光致电流特性进行了实验研究,其中特别是对光致电流的离散脉冲特性进行了较详细的分析讨论,获得了光致电流脉冲基本参数受到部分材料的电学特性、空间光调制器的结构参数以及部分工作条件影响的一些基本规律。通过光致电流离散脉冲特性的研究,还能帮助合理解释造成较弱写入光强下出现的光电损伤以及电荷迁移的类趋肤效应现象的原因。
本文最后对分析讨论结果进行综合,总结出在结构设计、材料选择、工作模式和工作条件等方面对BSO基非对称反射式光寻址空间光调制器进行优化的基本指导原则。
The parallel computing capability and the boson property of the photon enables the optical parallel computing to be one of the late-model high-performance computing which will probably substitute the electrical computing in the future. The optically addressed spatial light modulators with high performance will be the cores of the two-dimension optical parallel information processing ststems, such as optical parallel computing systems and the optical pattern recognition systems.
With some particular photo-electric and electro-optical properties, the photorefractive crystals, such as the bismuth silicate, have the functions of holographic memory, lightwaves coupling, all optical switch, wavelength conversion and incoherent-coherent conversion. When used the two-dimension optical parallel information processing ststems, the optically addressed spatial light modulators with the photorefractive crystals can work as a light detector and an electro-optical modulator at the same time. Furthermore, with excellent spectrum sensitivity and response speed, as well as the particular crystal lattice and photo-electric / electro-optical parameters, the bismuth silicate can make the research of the bismuth silicate spatial light modulators more convenient. Above all, the research results are useful for the research of the spatial light modulators based on other photorefractive crystals.
When used in the two-dimension optical parallel information processing ststems, the spatial frequency response of the modulation transform function and the operation speed are the two key characteristices of the spatial light modulators. Some factors, which influence the spatial frequency response of the modulation transform function and the operation speed of the asymmetric reflective bismuth silicate spatial light modulator, are analysed in theory and experiment.
Besides researching the image writing and reading of the asymmetric reflective bismuth silicate spatial light modulators, based on the band transport model, and the photoelectric damage of the BSO film obtained in the experiments is analyzed to achieve the transfer process and the final distribution of the charges inside the BSO film. Furthermore, the spatial frequency response of the modulation transform function of the asymmetric reflective bismuth silicate spatial light modulator is analysed and discussed in theory and experiment to achieve the intrinsic influence of the material properties, the structure parameters and the operation conditions on the spatial frequency response of the modulation transform function. The photoelectric damage can also provide some information of the growth of the bismuth silicate, and also indicate that the similar skin effect which usually occurs in the ac circuits and some ultrafast electric circuits have occurred in the BSO film while the charges are transferring.
The characteristics of the photoinduced current, especially the characteristics of the discrete photoinduced current pulses of the asymmetric and reflective bismuth silicate spatial light modulator when in writing process are investigated in detail. How some of the electrical properties of the materials, the structure parameters and the operation conditions have influences on the current pulses are achieved. Fuethermore, the discrete photoinduced current pulses may also contribute to the photoelectric damage of the BSO film obtained under low light power, and the similar skin effect when the charges are transferring.
Finally, based on the research results, the guide to optimize the asymmetric reflective bismuth silicate spatial light modulator by structure design, materials selection and the setup of operation modes and conditions is proposed.
BSO为代表的光折变晶体具有独特的光电及电光效应特性,融体全息存储、多波耦合及混频、全光开关、波长转换、非相干—相干转换等多种功能为一体。以此类材料为单一工作介质的光寻址空间光调制器,可兼有光电探测及电光调制功能运用于二维光信息处理系统。BSO晶体具有很好的光谱灵敏度及响应速度,以及独特的晶格结构和电光/光电参数,三个主轴方向上相等的线性电光系数便于简化分析,基于该晶体的光寻址空间光调制器的研究结果对于基于其它光折变晶体的光寻址空间光调制器的研究具有很重要的参考价值。
在二维并行光信息处理的实际应用中,光寻址空间光调制器调制传递函数的空间频率响应及工作速度两个特性至关重要。本文以BSO基非对称反射式光寻址空间光调制器作为研究对象,着重对密切关系其调制传递函数空间频率响应特性及工作速度的部分影响因素进行深入的理论及实验分析。
采用制备的BSO基非对称反射式光寻址空间光调制器进行了图像写入和读出实验分析,在此基础上结合带传输理论模型,对所获得的BSO晶体薄片光电损伤进行分析,获得在写入过程中BSO晶体薄片内的电荷迁移及最终电荷分布基本规律。结合理论数值模拟及实验分析,对BSO基非对称反射式光寻址空间光调制器调制传递函数的空间频率响应进行了深入的分析和讨论,得到部分材料特性、结构参数及工作条件等因素对调制传递函数空间频率响应的内在影响原理和规律。对光电损伤的研究还获得了有关晶体生长的部分重要信息,发现了电荷迁移时晶体内出现的类趋肤效应现象。
本文还对BSO基非对称反射式光寻址空间光调制器在实际应用中的光致电流特性进行了实验研究,其中特别是对光致电流的离散脉冲特性进行了较详细的分析讨论,获得了光致电流脉冲基本参数受到部分材料的电学特性、空间光调制器的结构参数以及部分工作条件影响的一些基本规律。通过光致电流离散脉冲特性的研究,还能帮助合理解释造成较弱写入光强下出现的光电损伤以及电荷迁移的类趋肤效应现象的原因。
本文最后对分析讨论结果进行综合,总结出在结构设计、材料选择、工作模式和工作条件等方面对BSO基非对称反射式光寻址空间光调制器进行优化的基本指导原则。
The parallel computing capability and the boson property of the photon enables the optical parallel computing to be one of the late-model high-performance computing which will probably substitute the electrical computing in the future. The optically addressed spatial light modulators with high performance will be the cores of the two-dimension optical parallel information processing ststems, such as optical parallel computing systems and the optical pattern recognition systems.
With some particular photo-electric and electro-optical properties, the photorefractive crystals, such as the bismuth silicate, have the functions of holographic memory, lightwaves coupling, all optical switch, wavelength conversion and incoherent-coherent conversion. When used the two-dimension optical parallel information processing ststems, the optically addressed spatial light modulators with the photorefractive crystals can work as a light detector and an electro-optical modulator at the same time. Furthermore, with excellent spectrum sensitivity and response speed, as well as the particular crystal lattice and photo-electric / electro-optical parameters, the bismuth silicate can make the research of the bismuth silicate spatial light modulators more convenient. Above all, the research results are useful for the research of the spatial light modulators based on other photorefractive crystals.
When used in the two-dimension optical parallel information processing ststems, the spatial frequency response of the modulation transform function and the operation speed are the two key characteristices of the spatial light modulators. Some factors, which influence the spatial frequency response of the modulation transform function and the operation speed of the asymmetric reflective bismuth silicate spatial light modulator, are analysed in theory and experiment.
Besides researching the image writing and reading of the asymmetric reflective bismuth silicate spatial light modulators, based on the band transport model, and the photoelectric damage of the BSO film obtained in the experiments is analyzed to achieve the transfer process and the final distribution of the charges inside the BSO film. Furthermore, the spatial frequency response of the modulation transform function of the asymmetric reflective bismuth silicate spatial light modulator is analysed and discussed in theory and experiment to achieve the intrinsic influence of the material properties, the structure parameters and the operation conditions on the spatial frequency response of the modulation transform function. The photoelectric damage can also provide some information of the growth of the bismuth silicate, and also indicate that the similar skin effect which usually occurs in the ac circuits and some ultrafast electric circuits have occurred in the BSO film while the charges are transferring.
The characteristics of the photoinduced current, especially the characteristics of the discrete photoinduced current pulses of the asymmetric and reflective bismuth silicate spatial light modulator when in writing process are investigated in detail. How some of the electrical properties of the materials, the structure parameters and the operation conditions have influences on the current pulses are achieved. Fuethermore, the discrete photoinduced current pulses may also contribute to the photoelectric damage of the BSO film obtained under low light power, and the similar skin effect when the charges are transferring.
Finally, based on the research results, the guide to optimize the asymmetric reflective bismuth silicate spatial light modulator by structure design, materials selection and the setup of operation modes and conditions is proposed.
引文
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