硅衬底氮化镓基黄光LED外延生长与器件性能研究
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摘要
近年来， GaN基LED发展迅速，开启了半导体照明的时代，使LED进入了人们的生活，被大众所熟悉。然而，半导体照明的普及还有很长的路要走。目前白光照明都是基于蓝光LED激发荧光粉模式，其效率较低、成本偏高且色品质不足。如果不用荧光粉，仅使用不同颜色的高效LED配色形成白光，发光效率将会有较大的提升空间，照明品质也会得到大幅改善。而实现配色白光照明的关键在于提高长波段LED的发光效率，特别是黄光LED的效率。本文选取在Si衬底上研发GaN基黄光LED，目的是从最常规的方式入手，利用现有成熟的设备、源料和工艺，在目前蓝光和绿光的基础上探索新的器件结构和生长条件，用简单易行的方法提高GaN基黄光LED的发光效率。
首先对黄光LED的生长工艺和外延结构进行了创新：利用AlN插入层改善GaN晶体质量，利用AlGaN渐变缓冲层调整GaN应力，通过升高温度改善量子阱质量，引入应力准备层减小量子阱的应力，引入V型坑屏蔽位错和释放应力，优化生长条件降低C污染，成功地在Si衬底上生长出GaN黄光LED外延材料。
对外延材料的各项性质进行了表征：测试了XRD摇摆曲线，计算了GaN中的位错密度；使用TEM观察了缓冲层、量子阱和V型坑的界面，分析了位错与界面状态的成因；测量了GaN的晶格常数和倒易空间mapping，研究了GaN与量子阱的应力状态；测量并拟合了各外延层的厚度与组分。
研究了Si衬底上GaN基黄光LED的器件性能：室温35A/cm2电流密度下，通350mA电流，器件的发光波长为566nm，电压为3.23V，光输出功率为72mW，对应外量子效率高达9.4%，低电流密度下外量子效率最高达到22.2%，该结果优于文献报道水平。对比了Si衬底蓝、绿、黄三种波段LED的波长飘移，提出了量化计算压电场屏蔽和能带填充对波长飘移影响的方法，把波长随电流密度飘移的主要原因归结于压电场屏蔽。研究了GaN基黄光LED变温变电流EL光谱，观察到低温大电流下3个新的子发光峰，建立了空穴泄漏模型，将其分别归结于V型坑侧壁量子阱，蓝光应力准备阱、In0.04Ga0.96N/GaN超晶格等三个区域的发光。
研究了GaN基蓝、绿、黄三种波段LED效率的三种droop特性，把效率随电流密度droop的主要原因归结于应力引起的压电场；把效率随温度droop的主要原因归结为缺陷引起的非辐射复合；把效率随波长droop的主要原因归结为In组分升高引起的应力增大与缺陷增多。从能量转换的角度解释了LED的效率droop的原因，即载流子与环境的能量交换(吸收或释放能量)会延长载流子辐射复合寿命，降低发光效率。此外，还对比了AlGaInP与GaN基黄光LED的性能差异，观察到前者发光效率与发光波长的温度稳定性明显不如后者，因此，GaN基取代AlGaInP基是黄光LED发展的必然趋势。
本论文研究结果表明，Si衬底GaN基LED不但在蓝、绿光范围内具有很高的发光效率，而且在长波段范围也具备很大的发展潜力。相信在在不久的将来，随着技术的进步，GaN基黄光LED效率必定会得到大幅提升，使用高效LED配色实现白光照明将成为现实。
Recent years, the rapid development of GaN based LEDs starts an age of solidstate lighting, LEDs come into people’s lives and be known by more and morepeople. However, there is still a long way to go for solid state lighting, the currentwhite lighting is based on phosphor conversion which has a relatively low efficiency,high cost and insufficient illumination quality. If we mix high efficient LEDs withmultiple colors to obtain white light, there will be huge potential on efficiencyimprovement with much better illumination quality. The key issue for realization ofcolor mixing is to enhance the efficiency of LEDs in long wavelength range,especially the yellow LEDs. In this study, we choose to research GaN based yellowLED on Si substrate, the purpose is to use the conventional method, utilize currentmature equipment, source materials and epitaxial growth technologies, optimize thedevice structure and growth technology on the basis of blue and green LEDs toenhance the efficiency of GaN based yellow LEDs in a simple way.
The paper begins with epitaxial growth, introduces many methods to optimizethe growth technology and epitaxial structure for yellow LEDs：use AlN interlayersto improve crystal quality of GaN and AlGaN step buffers to modulate the stress inGaN; improve the quality of quantum wells by increasing growth temperature,introduce blue quantum wells as prestrained layer to release stress, introduceV-defects to screen dislocations, optimize growth conditions to reduce carboncontamination, and finally, we successfully grow high brightness GaN based yellowLED on Si substrate.
The epitaxial properties of as grown wafer were investigated. Dislocationdensities were calculated by rocking curve measurement, the interfaces and defectsof buffer layers, MQWs and V-defects were studied by TEM, the stress within GaNand MQWs were analyzed by XRD reciprocal space mapping, thickness andcomposition of the layers were measured and simulated.
We test the device properties of GaN based yellow LEDs on Si substrate, atroom temperature and350mA driven current, the LED emits72mW yellow lightwith a wavelength of567nm, whereas the external quantum efficiency (EQE) is 9.4%, and the EQE reaches22.2%at a small current density, the results are of highlevel around the world. Higher voltage observed at a lower temperature is explainedby the carrier transportation mechanism. We also conclude that the main factoraffecting wavelength shift is screening of polarization field, and a method is set upto evaluate the effects of screening and band filling on wavelength shift. Three sidepeaks are observed on the El spectra which are determined to be originated from theside wall of V-defects, the prestrained blue MQWs and the supper lattice,respectively, a model of hole leakage is introduced to explain the phenomenon.
Finally, we study the similarities and differences on droop behavior amongGaN based blue, green and yellow LEDs. Through the study, we conclude that: thedroop of efficiency with current density can be attributed to polarization field, thedroop of efficiency with temperature can be attributed defect related non-radiativerecombination, and the droop of efficiency with wavelength is mainly attributed toincreasing of stress and defects due to increment of indium content. We setup a newmodel to explain the droop mechanism in the view point of energy conversion, thatis any energy transferring process will increase carriers’ recombination life time,which lower the efficiency. Besides, the efficiency droop between AlGaInP and GaNbased LEDs is compared. We observed that the GaN based LEDs’ efficiencystability as well as wavelength stability versus temperature is much better than thoseof AlGaInP based LEDs, thus we predict that GaN will replace AlGaInP and takedominant in yellow emission range.
This study reveals that GaN based LEDs on Si substrate have not only highefficiency on blue and green emission range, but also great potential in longwavelength range. With the development of technology, we believe that theefficiency of GaN based yellow LED will be greatly enhance in the near future,whereas the color mixing white lighting will become true.
首先对黄光LED的生长工艺和外延结构进行了创新：利用AlN插入层改善GaN晶体质量，利用AlGaN渐变缓冲层调整GaN应力，通过升高温度改善量子阱质量，引入应力准备层减小量子阱的应力，引入V型坑屏蔽位错和释放应力，优化生长条件降低C污染，成功地在Si衬底上生长出GaN黄光LED外延材料。
对外延材料的各项性质进行了表征：测试了XRD摇摆曲线，计算了GaN中的位错密度；使用TEM观察了缓冲层、量子阱和V型坑的界面，分析了位错与界面状态的成因；测量了GaN的晶格常数和倒易空间mapping，研究了GaN与量子阱的应力状态；测量并拟合了各外延层的厚度与组分。
研究了Si衬底上GaN基黄光LED的器件性能：室温35A/cm2电流密度下，通350mA电流，器件的发光波长为566nm，电压为3.23V，光输出功率为72mW，对应外量子效率高达9.4%，低电流密度下外量子效率最高达到22.2%，该结果优于文献报道水平。对比了Si衬底蓝、绿、黄三种波段LED的波长飘移，提出了量化计算压电场屏蔽和能带填充对波长飘移影响的方法，把波长随电流密度飘移的主要原因归结于压电场屏蔽。研究了GaN基黄光LED变温变电流EL光谱，观察到低温大电流下3个新的子发光峰，建立了空穴泄漏模型，将其分别归结于V型坑侧壁量子阱，蓝光应力准备阱、In0.04Ga0.96N/GaN超晶格等三个区域的发光。
研究了GaN基蓝、绿、黄三种波段LED效率的三种droop特性，把效率随电流密度droop的主要原因归结于应力引起的压电场；把效率随温度droop的主要原因归结为缺陷引起的非辐射复合；把效率随波长droop的主要原因归结为In组分升高引起的应力增大与缺陷增多。从能量转换的角度解释了LED的效率droop的原因，即载流子与环境的能量交换(吸收或释放能量)会延长载流子辐射复合寿命，降低发光效率。此外，还对比了AlGaInP与GaN基黄光LED的性能差异，观察到前者发光效率与发光波长的温度稳定性明显不如后者，因此，GaN基取代AlGaInP基是黄光LED发展的必然趋势。
本论文研究结果表明，Si衬底GaN基LED不但在蓝、绿光范围内具有很高的发光效率，而且在长波段范围也具备很大的发展潜力。相信在在不久的将来，随着技术的进步，GaN基黄光LED效率必定会得到大幅提升，使用高效LED配色实现白光照明将成为现实。
Recent years, the rapid development of GaN based LEDs starts an age of solidstate lighting, LEDs come into people’s lives and be known by more and morepeople. However, there is still a long way to go for solid state lighting, the currentwhite lighting is based on phosphor conversion which has a relatively low efficiency,high cost and insufficient illumination quality. If we mix high efficient LEDs withmultiple colors to obtain white light, there will be huge potential on efficiencyimprovement with much better illumination quality. The key issue for realization ofcolor mixing is to enhance the efficiency of LEDs in long wavelength range,especially the yellow LEDs. In this study, we choose to research GaN based yellowLED on Si substrate, the purpose is to use the conventional method, utilize currentmature equipment, source materials and epitaxial growth technologies, optimize thedevice structure and growth technology on the basis of blue and green LEDs toenhance the efficiency of GaN based yellow LEDs in a simple way.
The paper begins with epitaxial growth, introduces many methods to optimizethe growth technology and epitaxial structure for yellow LEDs：use AlN interlayersto improve crystal quality of GaN and AlGaN step buffers to modulate the stress inGaN; improve the quality of quantum wells by increasing growth temperature,introduce blue quantum wells as prestrained layer to release stress, introduceV-defects to screen dislocations, optimize growth conditions to reduce carboncontamination, and finally, we successfully grow high brightness GaN based yellowLED on Si substrate.
The epitaxial properties of as grown wafer were investigated. Dislocationdensities were calculated by rocking curve measurement, the interfaces and defectsof buffer layers, MQWs and V-defects were studied by TEM, the stress within GaNand MQWs were analyzed by XRD reciprocal space mapping, thickness andcomposition of the layers were measured and simulated.
We test the device properties of GaN based yellow LEDs on Si substrate, atroom temperature and350mA driven current, the LED emits72mW yellow lightwith a wavelength of567nm, whereas the external quantum efficiency (EQE) is 9.4%, and the EQE reaches22.2%at a small current density, the results are of highlevel around the world. Higher voltage observed at a lower temperature is explainedby the carrier transportation mechanism. We also conclude that the main factoraffecting wavelength shift is screening of polarization field, and a method is set upto evaluate the effects of screening and band filling on wavelength shift. Three sidepeaks are observed on the El spectra which are determined to be originated from theside wall of V-defects, the prestrained blue MQWs and the supper lattice,respectively, a model of hole leakage is introduced to explain the phenomenon.
Finally, we study the similarities and differences on droop behavior amongGaN based blue, green and yellow LEDs. Through the study, we conclude that: thedroop of efficiency with current density can be attributed to polarization field, thedroop of efficiency with temperature can be attributed defect related non-radiativerecombination, and the droop of efficiency with wavelength is mainly attributed toincreasing of stress and defects due to increment of indium content. We setup a newmodel to explain the droop mechanism in the view point of energy conversion, thatis any energy transferring process will increase carriers’ recombination life time,which lower the efficiency. Besides, the efficiency droop between AlGaInP and GaNbased LEDs is compared. We observed that the GaN based LEDs’ efficiencystability as well as wavelength stability versus temperature is much better than thoseof AlGaInP based LEDs, thus we predict that GaN will replace AlGaInP and takedominant in yellow emission range.
This study reveals that GaN based LEDs on Si substrate have not only highefficiency on blue and green emission range, but also great potential in longwavelength range. With the development of technology, we believe that theefficiency of GaN based yellow LED will be greatly enhance in the near future,whereas the color mixing white lighting will become true.
引文
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