高性能氧化锌基发光器件研究
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摘要
氧化锌（ZnO）是一种具有60meV激子结合能的直接宽禁带半导体材料，其带边发射为3.37eV，因为其室温下激子可以稳定存在，并且激子相关的发光效率在理论上比普通的电子空穴等离子效率高，多年来一直作为一种新型高效率发光材料而被广泛关注，而氧化锌的纳米结构：纳米线、量子点、纳米管等易于合成，其相关的发光器件也被大量研究，尤其是纳米线基发光器件取得了大量的新进展。但是ZnO纳米线发光器件距离应用还面临着诸多问题，本论文基于这些问题展开了研究，取得的主要结果如下：
（1） p-n结器件是实现高效氧化锌发光器件的最优选择，但是长久以来，困扰p-n结器件的最大问题就是同时具备高空穴浓度，高迁移率的p型氧化锌一直没有研制成功。基于此问题，通过采用MIS结构，实现了高结晶质量的纳米线阵列的高强度（3.7w）发光二极管，研究结果证明了c轴取向性一致的氧化锌纳米线可以替代薄膜实现高效的发光器件。
（2）高结晶质量的氧化锌材料是实现高效氧化锌发光器件的基础，但是难于获得。对于氧化锌薄膜材料来说，由于与传统衬底（蓝宝石，硅）的晶格失配较大，很难形成单晶薄膜，而氧化锌单晶衬底的造价过于昂贵，无法在应用中广泛使用。这些都为高结晶质量的氧化锌材料的制备造成了困难。基于此问题，通过优化MOCVD的生长工艺，制备了高结晶质量的氧化锌单晶纳米线阵列，其c轴取向性一致，可以取代薄膜作为高效发光材料，在高质量的氧化锌纳米线的基础上制备了Au/MgO/ZnO的异质结，实现氧化锌纳米线的电泵浦随机激光现象。
（3）高效的氧化锌的带边发射是实现高效自由激子相关的基础，但是缺陷相关的发光多数占主导，这导致了器件的禁带发光较弱，器件的寿命较短。基于此问题，通过利用能带工程，利用氧锌镁和氧化锌异质结对载流子输运的限制，获得了完全由氧化锌带边发射为主体的发光器件，在有效的抑制了缺陷相关的发光同时，实现了长寿命（20多小时），纯紫外发光二极管。这证明了氧锌镁与氧化锌异质结器件的载流子限制优势，为实现高效的氧化锌带边发射提供了借鉴。
ZnO is a direct wide bandgap semiconductor with60meV exciton bindingenergy, the near band gap emission of ZnO is located at3.37eV, the exciton is stableat room temperature, and the luminescence efficiency related to the excitons is highcompared with the electron-hole plasma, it attracts a lot of attention in recent years.The nanostructure of ZnO for example: nanowire，quantum dot，nanotube which areeasily prepared. The LED based on ZnO nanostructure also attracts much attentionand the area has a lot of progress, but there is still some problems to be considered,and the paper do some research:
(1) p-n junction is an ideal structure for the LED, but the most importantproblem is that the p-type ZnO with high hole concentration and highmobility can not be got. We use MIS junction to study LED based on thenanowire and get3.7w electroluminescence and random lasing, the resultspave the way of nanowire with high quality to realize the active layer.
(2) The high quality of ZnO is the basis of the LED, but it is hard. For the filmof ZnO, the lattice mismatch of the substrate make ZnO hard to be a singlefilm, and the single substrate is too expensive to be used widely. Thoseproblems make it hard to get high quality ZnO. To resolve the problem, weoptimize the progress of MOCVD, and get the high quality and well-allignedZnO nanowire array which can replace the film as the active layer，based on the nanowire with hith quality, Au/MgO/ZnO heterojunction has beenfabricated, and the random lasing phenomenon in the ZnO nanowire isrealized.
(3) The near band gap emission is the basis of the exciton related luminescence,but the defect related luminescence is dominant in many LEDs, and thedevice has low quality luminescence and short life, which lost the advantageof wide bandgap. To resolve this problem, we use ZnMgO/ZnO junction toconfine the electrons and get the pure near band gap emission of ZnO, thelife is more than20hours. Those results demonstrate the advantage ofZnMgO/ZnO which can confine the carriers and realize the high efficiencyluminescence.
（1） p-n结器件是实现高效氧化锌发光器件的最优选择，但是长久以来，困扰p-n结器件的最大问题就是同时具备高空穴浓度，高迁移率的p型氧化锌一直没有研制成功。基于此问题，通过采用MIS结构，实现了高结晶质量的纳米线阵列的高强度（3.7w）发光二极管，研究结果证明了c轴取向性一致的氧化锌纳米线可以替代薄膜实现高效的发光器件。
（2）高结晶质量的氧化锌材料是实现高效氧化锌发光器件的基础，但是难于获得。对于氧化锌薄膜材料来说，由于与传统衬底（蓝宝石，硅）的晶格失配较大，很难形成单晶薄膜，而氧化锌单晶衬底的造价过于昂贵，无法在应用中广泛使用。这些都为高结晶质量的氧化锌材料的制备造成了困难。基于此问题，通过优化MOCVD的生长工艺，制备了高结晶质量的氧化锌单晶纳米线阵列，其c轴取向性一致，可以取代薄膜作为高效发光材料，在高质量的氧化锌纳米线的基础上制备了Au/MgO/ZnO的异质结，实现氧化锌纳米线的电泵浦随机激光现象。
（3）高效的氧化锌的带边发射是实现高效自由激子相关的基础，但是缺陷相关的发光多数占主导，这导致了器件的禁带发光较弱，器件的寿命较短。基于此问题，通过利用能带工程，利用氧锌镁和氧化锌异质结对载流子输运的限制，获得了完全由氧化锌带边发射为主体的发光器件，在有效的抑制了缺陷相关的发光同时，实现了长寿命（20多小时），纯紫外发光二极管。这证明了氧锌镁与氧化锌异质结器件的载流子限制优势，为实现高效的氧化锌带边发射提供了借鉴。
ZnO is a direct wide bandgap semiconductor with60meV exciton bindingenergy, the near band gap emission of ZnO is located at3.37eV, the exciton is stableat room temperature, and the luminescence efficiency related to the excitons is highcompared with the electron-hole plasma, it attracts a lot of attention in recent years.The nanostructure of ZnO for example: nanowire，quantum dot，nanotube which areeasily prepared. The LED based on ZnO nanostructure also attracts much attentionand the area has a lot of progress, but there is still some problems to be considered,and the paper do some research:
(1) p-n junction is an ideal structure for the LED, but the most importantproblem is that the p-type ZnO with high hole concentration and highmobility can not be got. We use MIS junction to study LED based on thenanowire and get3.7w electroluminescence and random lasing, the resultspave the way of nanowire with high quality to realize the active layer.
(2) The high quality of ZnO is the basis of the LED, but it is hard. For the filmof ZnO, the lattice mismatch of the substrate make ZnO hard to be a singlefilm, and the single substrate is too expensive to be used widely. Thoseproblems make it hard to get high quality ZnO. To resolve the problem, weoptimize the progress of MOCVD, and get the high quality and well-allignedZnO nanowire array which can replace the film as the active layer，based on the nanowire with hith quality, Au/MgO/ZnO heterojunction has beenfabricated, and the random lasing phenomenon in the ZnO nanowire isrealized.
(3) The near band gap emission is the basis of the exciton related luminescence,but the defect related luminescence is dominant in many LEDs, and thedevice has low quality luminescence and short life, which lost the advantageof wide bandgap. To resolve this problem, we use ZnMgO/ZnO junction toconfine the electrons and get the pure near band gap emission of ZnO, thelife is more than20hours. Those results demonstrate the advantage ofZnMgO/ZnO which can confine the carriers and realize the high efficiencyluminescence.
引文
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