光泵浦VECSELs设计理论、制备工艺与实验研究
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摘要
光泵浦VECSELs是一种以半导体增益结构材料为激光介质的半导体激光泵浦半导体增益介质的全固态激光器。它结合了半导体泵浦固体激光器和传统电泵浦VCSELs的构造方法,具有高输出功率、高转换效率、高光束质量及宽光谱调谐范围等优点。正是由于这些突出优点而使得光泵浦VECSELs在高速激光打印、光信息存储、激光通信与目标探测、刑事侦查、生物化学与材料分析、临床医疗及影像显示等诸多领域具有广泛的应用前景。
本文在综述光泵浦VECSELs的产生和发展过程的基础上,详细介绍了光泵浦VECSELs的基本原理和典型结构,系统阐述了VECSEL芯片制备的材料体系,对其中的核心部件-半导体增益介质VECSEL芯片的设计理论和设计过程开展了深入研究；基于VECSEL芯片的设计结构和光泵浦VECSELs的工作特性,研究了VECSEL芯片的外延生长和芯片封装制备工艺；基于有限元计算分析方法,深入研究了光泵浦VECSELs的热特性；基于速率方程理论,建立了光泵浦VECSELs的理论模型,分析了光泵浦VECSELs谐振腔结构,开展了光泵浦VECSELs的实验研究。
从半导体能带理论出发,介绍了不同半导体材料设计和生长过程中的晶格失配度及厚度加权和零应变平衡方法。给出了半导体增益介质VECSEL芯片的典型结构,基于多光束干涉理论和光学传播矩阵,建立了布拉格反射镜反射率和反射镜带宽的方程,分析了反射镜对数和材料折射率差对布拉格反射镜反射率的影响；采用((HL)DH)N排列形式,设计了808nm和980nm双反射带反射镜,分别获得99.991%和99.959%的反射率。研究了In组份、P组份和量子阱宽对输出波长的影响,从模型固体理论出发,结合k.p理论、Pikus-Bir理论和驻波条件,提出一种应变量子阱对称补偿方法,通过在InGaAs量子阱两侧对称生长GaAsP材料层实现对量子阱压应变的良好补偿,设计了13周期应变对称补偿InGaAs量子阱结构的980nm VECSEL外延片。给出了VECSEL芯片制备工艺过程,基于分子束外延生长技术,开展了980nmVECSEL外延片的结构生长,经过对所生长VECSEL外延片的性能参数进行测试,结果表明达到了预期的设计要求。采用机械抛光和化学腐蚀相结合的减薄方式,研究了VECSEL外延片减薄工艺,研究了VECSEL芯片和散热片金属化及铟焊封装工艺。
从光泵浦VECSELs的废热产生机理出发,建立了光泵浦VECSELs的热分析模型。从速率方程理论出发,建立了光泵浦VECSELs的理论模型,给出了光泵浦VECSELs的阈值条件和输出功率特性,并进行了数值模拟。基于等价腔分析方法,建立了光泵浦VECSELs的谐振腔模型,给出了VECSEL芯片和输出镜表面的基模光斑随谐振腔腔长的变化情况。首次建立了双反射带反射镜结构VECSEL芯片有源区内部热载荷的分布方程,分别对比研究了单、双反射带反射镜反射率和厚度相同情况下VECSEL芯片的热特性,结果表明双反射带反射镜结构VECSEL芯片的热特性明显优于单反射带反射镜结构VECSEL芯片的热特性。
针对VECSEL芯片封装方式差异对芯片热特性的影响,提出VECSEL芯片双面键合散热片封装工艺及方法,研究了双面键合散热片结构VECSEL芯片的热特性,并从实验上进行了验证,结果表明双面键合散热片芯片封装方式有效改善了激光器的热特性。开展了泵浦光入射方向、芯片热管理方式、芯片工作温度等差异的实验研究,在工作温度为10℃时,最大获得了4.6W978nm光泵浦VECSELs激光输出,光光转换效率达到29.7%。为了从泵浦光束分布的角度来提高对光泵浦VECSELs的热管理,首次将环形光束的应用引入到激光器的泵浦领域,深入研究了环形光束参数对VECSEL芯片热特性的影响,通过光泵浦实验,在室温下获得4.64W激光输出。研究结果表明：在同等工作条件下,与高斯光束泵浦VECSELs相比,环形光束泵浦VECSELs的阈值较高,但其出现热翻转效应相对延迟,允许注入更大的有效泵浦功率,最大输出功率相应得到提高。研究了光泵浦VECSELs声光调Q激光器的输出功率特性,通过在腔内置入倍频晶体开展了连续运转和准连续运转情况下的腔内倍频实验研究,最大分别获得了0.61W和0.86W489nm激光输出。
Optically pumped vertical-external-cavity surface emitting semiconductor lasers (OPS-VECSELs) is a novel all solid state laser, which with semiconductor gain structure material to be laser material.To be an outstanding member in laser family, OPS-VECSELs combined the manufacture structure of the diode pumped solid state laser and the traditional electrically pumped vertical-cavity surface emitting semiconductor lasers (EPS-VCSELs), and possessed high power, high conversion efficiency, good beam quality, wide range of tunable wavelength, etc. Today, OPS-VECSELs is widely used in many fields for its prominent advantages, such as high speed laser printing, optical data storage, laser communication, target detection, criminal investigation, biochemistry and material analysis, clinical medical, image display, etc.
The emergence and development process of OPS-VECSELs is reviewed in the paper at first, then the basic principle and typical structure of OPS-VECSELs are introduced in detail. The semiconductor material system of VECSEL chip is elaborated systematically, and the gain material of the design theory and design process of VECSEL chip is studied deeply. The epitaxial growth and the packaging preparation technology process of VECSEL chip is studied based on the structure designed of VECSEL chip and the working characteristics of OPS-VECSELs. The thermal characteristics of OPS-VECSELs is studied deeply via finite element method, the theoretical model of OPS-VECSELs is set up based on the rate equation theory, the cavity structure of OPS-VECSELs is analyzed. Finally, a series of OPS-VECSELs experiments are carried out.
The lattice mismatched between the two adjacent layer, the thickness weighted and the zero-stress method of strain balance are introduced based on the semiconductor energy band theory. The traditional structure of VECSEL chip is introduced, and each layer in the chip is designed one after another. The equations of Bragg reflector's reflectivity and band width are set up based on the theory of multiple-beam interference and optical matrix, the influence of the number of Bragg layer and the refractivity difference of two materials on Bragg reflector's reflectivity are analyzed.808nm and980nm double band mirror is designed based on the pattern of ((HL)DH)N, the reflectivity of99.991%and9.959%are obtained respectively. The influence of Indium composition in the InGaAs quantum well layer, P composition in the GaAsP and the width of InGaAs quantum well layer on laser wavelength are studied respectively. The method of multiple InGaAs strain quantum wells compensated symmetrically by GaAsP in double side of InGaAs layer is presented based on model solid theory, k.p theory, Pikus-Bir theory and standing wave condition, and the structure of980nm VECSEL wafer with13RPG InGaAs is designed. The preparation process of VECSEL wafer is given out. and the980nm VECSEL wafer is grown on GaAs substrate by Molecular Beam Epitaxy (MBE). The wafer's characteristic parameters are measured, and the result show that the VECSEL wafer designed is very good. The GaAs substrate in the VECSEL wafer is removed by mechanical polishing and chemical etching, then the metallization on Surface of VECSEL chip and heat spreader, the heat spreader or VECSEL chip is welded to the heatsink via Indium solder at higher temperature. The heat spreader is bonded to the VECSELchip via liquid capillary bonding at last.
The thermal model is set up based on the mechanism of waste heat generated in the OPS-VECSELs. The theory model of OPS-VECSELs is set up based on the rate equation theory, the laser threshold condition and the characteristics of output power are given out. then the numerical simulation is carried out. The cavity model of OPS-VECSELs is set up based on the equivalent resonator method, then the curves that the spot size of fundamental mode in the VECSEL chip and on the output mirror changes as the distance of laser cavity are given out in the paper. The equation of thermal load distribution in the active layer of VECSEL chip with DBM is set up firstly, the thermal characteristics of VECSEL chip with DBR and DBM are analyzed comparatively at the condition of same reflectivity and same thickness. The result show that thermal characteristics of VECSEL chip with DBM is better than VECSEL chip with DBR clearly.
In order to study the influence of the difference chip packaging way to the thermal characteristics of VECSEL chip, VECSEL chip with double side bonding heat spreader is presented in the paper. The thermal characteristics of VECSEL chip with double side bonding heat spreader is studied theoretically and experimentally. The results show that the thermal characteristics of VECSEL chip is improved clearly. A series experiments of OPS-VECSELs are carried out at the different incidence of pump light, the different thermal management way and the different working temperature of VECSEL chip,4.6W978nm OPS-VECSELs is obtained and the max optical-to-optical conversion efficiency is29.7%at10℃.In order to study the influence of different pump beam distribution to thermal management of OPS-VECSELs. Annular beam is introduced into the laser pumping field firstly, and the influence of annular beam's parameters on the thermal characteristics of OPS-VECSELs are analyzed via finite element method deeply.Then the experiment of annular beam pumped VECSELs is carried out, and4.64W978nm OPS-VECSELs is obtained at room temperature. At the same operating conditions, compared to VECSELs pumped by Gaussian beam, annular beam pumped VECSELs poccessed higher threshold, good thermal effect, permitting higher efficient pump power, and higher maximum output power. At last, the acousto-optical q switched OPS-VECSELs and the double frequency intracavity experiment are also shown in the paper,0.61W and0.86W489nm laser are obtained in CW and QCW laser cavity respectively.
本文在综述光泵浦VECSELs的产生和发展过程的基础上,详细介绍了光泵浦VECSELs的基本原理和典型结构,系统阐述了VECSEL芯片制备的材料体系,对其中的核心部件-半导体增益介质VECSEL芯片的设计理论和设计过程开展了深入研究；基于VECSEL芯片的设计结构和光泵浦VECSELs的工作特性,研究了VECSEL芯片的外延生长和芯片封装制备工艺；基于有限元计算分析方法,深入研究了光泵浦VECSELs的热特性；基于速率方程理论,建立了光泵浦VECSELs的理论模型,分析了光泵浦VECSELs谐振腔结构,开展了光泵浦VECSELs的实验研究。
从半导体能带理论出发,介绍了不同半导体材料设计和生长过程中的晶格失配度及厚度加权和零应变平衡方法。给出了半导体增益介质VECSEL芯片的典型结构,基于多光束干涉理论和光学传播矩阵,建立了布拉格反射镜反射率和反射镜带宽的方程,分析了反射镜对数和材料折射率差对布拉格反射镜反射率的影响；采用((HL)DH)N排列形式,设计了808nm和980nm双反射带反射镜,分别获得99.991%和99.959%的反射率。研究了In组份、P组份和量子阱宽对输出波长的影响,从模型固体理论出发,结合k.p理论、Pikus-Bir理论和驻波条件,提出一种应变量子阱对称补偿方法,通过在InGaAs量子阱两侧对称生长GaAsP材料层实现对量子阱压应变的良好补偿,设计了13周期应变对称补偿InGaAs量子阱结构的980nm VECSEL外延片。给出了VECSEL芯片制备工艺过程,基于分子束外延生长技术,开展了980nmVECSEL外延片的结构生长,经过对所生长VECSEL外延片的性能参数进行测试,结果表明达到了预期的设计要求。采用机械抛光和化学腐蚀相结合的减薄方式,研究了VECSEL外延片减薄工艺,研究了VECSEL芯片和散热片金属化及铟焊封装工艺。
从光泵浦VECSELs的废热产生机理出发,建立了光泵浦VECSELs的热分析模型。从速率方程理论出发,建立了光泵浦VECSELs的理论模型,给出了光泵浦VECSELs的阈值条件和输出功率特性,并进行了数值模拟。基于等价腔分析方法,建立了光泵浦VECSELs的谐振腔模型,给出了VECSEL芯片和输出镜表面的基模光斑随谐振腔腔长的变化情况。首次建立了双反射带反射镜结构VECSEL芯片有源区内部热载荷的分布方程,分别对比研究了单、双反射带反射镜反射率和厚度相同情况下VECSEL芯片的热特性,结果表明双反射带反射镜结构VECSEL芯片的热特性明显优于单反射带反射镜结构VECSEL芯片的热特性。
针对VECSEL芯片封装方式差异对芯片热特性的影响,提出VECSEL芯片双面键合散热片封装工艺及方法,研究了双面键合散热片结构VECSEL芯片的热特性,并从实验上进行了验证,结果表明双面键合散热片芯片封装方式有效改善了激光器的热特性。开展了泵浦光入射方向、芯片热管理方式、芯片工作温度等差异的实验研究,在工作温度为10℃时,最大获得了4.6W978nm光泵浦VECSELs激光输出,光光转换效率达到29.7%。为了从泵浦光束分布的角度来提高对光泵浦VECSELs的热管理,首次将环形光束的应用引入到激光器的泵浦领域,深入研究了环形光束参数对VECSEL芯片热特性的影响,通过光泵浦实验,在室温下获得4.64W激光输出。研究结果表明：在同等工作条件下,与高斯光束泵浦VECSELs相比,环形光束泵浦VECSELs的阈值较高,但其出现热翻转效应相对延迟,允许注入更大的有效泵浦功率,最大输出功率相应得到提高。研究了光泵浦VECSELs声光调Q激光器的输出功率特性,通过在腔内置入倍频晶体开展了连续运转和准连续运转情况下的腔内倍频实验研究,最大分别获得了0.61W和0.86W489nm激光输出。
Optically pumped vertical-external-cavity surface emitting semiconductor lasers (OPS-VECSELs) is a novel all solid state laser, which with semiconductor gain structure material to be laser material.To be an outstanding member in laser family, OPS-VECSELs combined the manufacture structure of the diode pumped solid state laser and the traditional electrically pumped vertical-cavity surface emitting semiconductor lasers (EPS-VCSELs), and possessed high power, high conversion efficiency, good beam quality, wide range of tunable wavelength, etc. Today, OPS-VECSELs is widely used in many fields for its prominent advantages, such as high speed laser printing, optical data storage, laser communication, target detection, criminal investigation, biochemistry and material analysis, clinical medical, image display, etc.
The emergence and development process of OPS-VECSELs is reviewed in the paper at first, then the basic principle and typical structure of OPS-VECSELs are introduced in detail. The semiconductor material system of VECSEL chip is elaborated systematically, and the gain material of the design theory and design process of VECSEL chip is studied deeply. The epitaxial growth and the packaging preparation technology process of VECSEL chip is studied based on the structure designed of VECSEL chip and the working characteristics of OPS-VECSELs. The thermal characteristics of OPS-VECSELs is studied deeply via finite element method, the theoretical model of OPS-VECSELs is set up based on the rate equation theory, the cavity structure of OPS-VECSELs is analyzed. Finally, a series of OPS-VECSELs experiments are carried out.
The lattice mismatched between the two adjacent layer, the thickness weighted and the zero-stress method of strain balance are introduced based on the semiconductor energy band theory. The traditional structure of VECSEL chip is introduced, and each layer in the chip is designed one after another. The equations of Bragg reflector's reflectivity and band width are set up based on the theory of multiple-beam interference and optical matrix, the influence of the number of Bragg layer and the refractivity difference of two materials on Bragg reflector's reflectivity are analyzed.808nm and980nm double band mirror is designed based on the pattern of ((HL)DH)N, the reflectivity of99.991%and9.959%are obtained respectively. The influence of Indium composition in the InGaAs quantum well layer, P composition in the GaAsP and the width of InGaAs quantum well layer on laser wavelength are studied respectively. The method of multiple InGaAs strain quantum wells compensated symmetrically by GaAsP in double side of InGaAs layer is presented based on model solid theory, k.p theory, Pikus-Bir theory and standing wave condition, and the structure of980nm VECSEL wafer with13RPG InGaAs is designed. The preparation process of VECSEL wafer is given out. and the980nm VECSEL wafer is grown on GaAs substrate by Molecular Beam Epitaxy (MBE). The wafer's characteristic parameters are measured, and the result show that the VECSEL wafer designed is very good. The GaAs substrate in the VECSEL wafer is removed by mechanical polishing and chemical etching, then the metallization on Surface of VECSEL chip and heat spreader, the heat spreader or VECSEL chip is welded to the heatsink via Indium solder at higher temperature. The heat spreader is bonded to the VECSELchip via liquid capillary bonding at last.
The thermal model is set up based on the mechanism of waste heat generated in the OPS-VECSELs. The theory model of OPS-VECSELs is set up based on the rate equation theory, the laser threshold condition and the characteristics of output power are given out. then the numerical simulation is carried out. The cavity model of OPS-VECSELs is set up based on the equivalent resonator method, then the curves that the spot size of fundamental mode in the VECSEL chip and on the output mirror changes as the distance of laser cavity are given out in the paper. The equation of thermal load distribution in the active layer of VECSEL chip with DBM is set up firstly, the thermal characteristics of VECSEL chip with DBR and DBM are analyzed comparatively at the condition of same reflectivity and same thickness. The result show that thermal characteristics of VECSEL chip with DBM is better than VECSEL chip with DBR clearly.
In order to study the influence of the difference chip packaging way to the thermal characteristics of VECSEL chip, VECSEL chip with double side bonding heat spreader is presented in the paper. The thermal characteristics of VECSEL chip with double side bonding heat spreader is studied theoretically and experimentally. The results show that the thermal characteristics of VECSEL chip is improved clearly. A series experiments of OPS-VECSELs are carried out at the different incidence of pump light, the different thermal management way and the different working temperature of VECSEL chip,4.6W978nm OPS-VECSELs is obtained and the max optical-to-optical conversion efficiency is29.7%at10℃.In order to study the influence of different pump beam distribution to thermal management of OPS-VECSELs. Annular beam is introduced into the laser pumping field firstly, and the influence of annular beam's parameters on the thermal characteristics of OPS-VECSELs are analyzed via finite element method deeply.Then the experiment of annular beam pumped VECSELs is carried out, and4.64W978nm OPS-VECSELs is obtained at room temperature. At the same operating conditions, compared to VECSELs pumped by Gaussian beam, annular beam pumped VECSELs poccessed higher threshold, good thermal effect, permitting higher efficient pump power, and higher maximum output power. At last, the acousto-optical q switched OPS-VECSELs and the double frequency intracavity experiment are also shown in the paper,0.61W and0.86W489nm laser are obtained in CW and QCW laser cavity respectively.
引文
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