GaN基电子器件的漏电流机理与频率散射特性研究
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摘要
作为第三代半导体代表的GaN及其合金材料具有宽的直接带隙、高的热导率、高击穿场强、高饱和电子漂移速度及稳定的化学性质等特点,同时由于AlGaN/GaN异质结构界面存在很大的能带偏移和极化不连续性,在其界面处可形成浓度达1013cm-2的二维电子气。这些特点使GaN及其合金材料在高温、高频、大功率器件方面有着广阔的应用前景。但是由于GaN及其合金材料在其外延生长以及器件制备过程中可产生高密度缺陷,GaN基器件中容易出现高漏电流和包括电流崩塌在内的各种散射现象,严重地制约了GaN基器件的发展和应用。因此,缺陷态对GaN基器件电学性能影响以及表征和机制是目前研究的重点内容之一。本论文应用材料表征技术、电流-电压(I-V)和电容-电压(C-V)等电学表征技术和数值模拟方法研究了缺陷态对GaN基电子器件电学性质的影响及其机制,包括以下内容：
1、在低密度缺陷的GaN同质外延片上制备了高质量的垂直结构肖特基二极管。提出了一个与位错相关的隧穿漏电流模型以解释所测量到的远大于热电子发射模型预言的反向漏电流。该模型认为电子从金属通过热场发射隧穿进入禁带中的导电连续态而形成漏电流。利用该模型成功拟合了所观测的I-V特征曲线,说明隧穿发射是漏电流的主要机制。
2、制备了平面结构的AlGaN/GaN异质结肖特基二极管,研究了后栅退火对器件性能的影响。I-V表征显示后栅退火通过钝化肖特基金属/AlGaN界面态有效地减小了反向漏电流；C-V表征显示后栅退火可以有效降低AlGaN/GaN异质结的表面态和界面态密度,但长时间退火可降低AlGaN势垒层的极化电荷面密度。C-V频率散射测量显示后栅退火通过降低AlGaN/GaN界面态密度消除了界面态对费米能级的钉扎效应。
3、用数值模拟方法研究了场板结构对AlGaN/GaN HEMT瞬态响应中栅延迟和漏延迟现象的影响。模拟结果显示栅场板通过改变表面态对电子的俘获能力及产生自身的感应电荷改变了瞬态过程初始状态时的沟道中载流子浓度和分布,进而抑制栅延迟和漏延迟的强度,但是场板本身不能影响延迟时间。
GaN and its alloys have shown attractive physical properties, such as wide direct band gap, high breakdown electrical field, high electron saturation velocity, high thermal conductivity and high thermal stability. Due to the strong spontaneous and piezoelectric polarization effects, high density two-dimensional electron gas with sheet carrier density up to1013cm-2could exist at the AlGaN/GaN interface, which has shown excellent electronic transport properties. As a result, GaN-based materials have great prospect in applications of high frequency, high temperature and high-power semiconductor devices. However, high-density defects commonly exist in heteroepitaxial GaN, have been considered as the major cause of excessive leakage current and frequency dispersion effects observed in GaN-based devices. In this work, the impact of structural defects on the performance of GaN-based electronic devices was investigated, utilizing material/device characterization techniques, such as capacitance-voltage (C-V) and current-voltage-temperature (I-V-T) measurements as well as numerical simulation method. The main conclusions are listed as follows:
1) high-quality vertical Schottky barrier diodes (SBDs) on low-defect-density GaN homo-epilayer were fabricated. A leakage current model focusing on defect-related conduction is purposed to explain the experimental temperature-dependent reverse I-V characteristics. The model suggests that linear defects like dislocations would form a continuous conductive band within the forbidden band on which leakage electrons could move. Electrons from the contact metal could overcome the locally reduced Schottky barrier and tunnel onto the defect band through thermionic-field emission. Good agreement between the simulated I-V curves and the experimental results is obtained.
2) Lateral AlGaN/GaN-based Schottky barrier diodes (SBDs) with Ni/Au Schottky contacts were fabricated. The impact of post-gate-annealing (PGA) process on the properties of the SBDs was investigated. I-V characterization shows that the PGA process could reduce the density of electrically active states at the Schottky metal/AlGaN interface, leading to lower reverse leakage current. C-V characterization shows that the PGA process could reduce the density of surface states and the AlGaN/GaN interface states, as well as the density of polarization charge within the AlGaN barrier layer. Analysis of capacitance frequency dispersion in depletion state indicates that Fermi level pinned by the AlGaN/GaN interface states can be unpinned by PGA.
3) The impact of field plates (FPs) on the transient response characteristics of AlGaN/GaN HEMT devices is studied using numerical simulation method. FP can suppress the maginitude of lag phenomena in both cases of gate-lag and drain lag, but has no influence on the lapsed time. The change of ionization probability of surface states and the negative charges on FP induced by the potential difference between the FP and the semiconductor could modulate the carrier density within the device channel, which could reduce the lag effect.
1、在低密度缺陷的GaN同质外延片上制备了高质量的垂直结构肖特基二极管。提出了一个与位错相关的隧穿漏电流模型以解释所测量到的远大于热电子发射模型预言的反向漏电流。该模型认为电子从金属通过热场发射隧穿进入禁带中的导电连续态而形成漏电流。利用该模型成功拟合了所观测的I-V特征曲线,说明隧穿发射是漏电流的主要机制。
2、制备了平面结构的AlGaN/GaN异质结肖特基二极管,研究了后栅退火对器件性能的影响。I-V表征显示后栅退火通过钝化肖特基金属/AlGaN界面态有效地减小了反向漏电流；C-V表征显示后栅退火可以有效降低AlGaN/GaN异质结的表面态和界面态密度,但长时间退火可降低AlGaN势垒层的极化电荷面密度。C-V频率散射测量显示后栅退火通过降低AlGaN/GaN界面态密度消除了界面态对费米能级的钉扎效应。
3、用数值模拟方法研究了场板结构对AlGaN/GaN HEMT瞬态响应中栅延迟和漏延迟现象的影响。模拟结果显示栅场板通过改变表面态对电子的俘获能力及产生自身的感应电荷改变了瞬态过程初始状态时的沟道中载流子浓度和分布,进而抑制栅延迟和漏延迟的强度,但是场板本身不能影响延迟时间。
GaN and its alloys have shown attractive physical properties, such as wide direct band gap, high breakdown electrical field, high electron saturation velocity, high thermal conductivity and high thermal stability. Due to the strong spontaneous and piezoelectric polarization effects, high density two-dimensional electron gas with sheet carrier density up to1013cm-2could exist at the AlGaN/GaN interface, which has shown excellent electronic transport properties. As a result, GaN-based materials have great prospect in applications of high frequency, high temperature and high-power semiconductor devices. However, high-density defects commonly exist in heteroepitaxial GaN, have been considered as the major cause of excessive leakage current and frequency dispersion effects observed in GaN-based devices. In this work, the impact of structural defects on the performance of GaN-based electronic devices was investigated, utilizing material/device characterization techniques, such as capacitance-voltage (C-V) and current-voltage-temperature (I-V-T) measurements as well as numerical simulation method. The main conclusions are listed as follows:
1) high-quality vertical Schottky barrier diodes (SBDs) on low-defect-density GaN homo-epilayer were fabricated. A leakage current model focusing on defect-related conduction is purposed to explain the experimental temperature-dependent reverse I-V characteristics. The model suggests that linear defects like dislocations would form a continuous conductive band within the forbidden band on which leakage electrons could move. Electrons from the contact metal could overcome the locally reduced Schottky barrier and tunnel onto the defect band through thermionic-field emission. Good agreement between the simulated I-V curves and the experimental results is obtained.
2) Lateral AlGaN/GaN-based Schottky barrier diodes (SBDs) with Ni/Au Schottky contacts were fabricated. The impact of post-gate-annealing (PGA) process on the properties of the SBDs was investigated. I-V characterization shows that the PGA process could reduce the density of electrically active states at the Schottky metal/AlGaN interface, leading to lower reverse leakage current. C-V characterization shows that the PGA process could reduce the density of surface states and the AlGaN/GaN interface states, as well as the density of polarization charge within the AlGaN barrier layer. Analysis of capacitance frequency dispersion in depletion state indicates that Fermi level pinned by the AlGaN/GaN interface states can be unpinned by PGA.
3) The impact of field plates (FPs) on the transient response characteristics of AlGaN/GaN HEMT devices is studied using numerical simulation method. FP can suppress the maginitude of lag phenomena in both cases of gate-lag and drain lag, but has no influence on the lapsed time. The change of ionization probability of surface states and the negative charges on FP induced by the potential difference between the FP and the semiconductor could modulate the carrier density within the device channel, which could reduce the lag effect.
引文
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