射频微波SiGe HBT建模与参数提取技术研究
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摘要
随着无线通信产业的高速发展,器件特征尺寸不断减小,锗硅异质结双极晶体管(SiGe HBT)最高特征频率已达到375GHz。与Ⅲ-Ⅴ族器件相比,采用SiGe工艺制作的集成电路兼容于传统CMOS工艺、集成度高和成本低等优势使其成为无线移动通信系统最佳候选。
为了提高射频SiGe工艺集成电路设计成功率,缩短设计时间,降低设计成本,需要建立工作在射频频段精确的SiGe HBT模型。目前普遍应用的SiGe HBT模型存在模型精度不够高,模型开发周期较长等等缺点,需要付出更多的努力,使得射频SiGe HBT模型更加成熟,满足绝大部分集成电路设计的要求。本文主要研究了射频微波SiGe HBT器件建模与参数提取技术,基于这个研究课题,取得了以下所述研究成果：
1)提出了一种改进的SiGe HBT小信号等效电路模型,该模型包含了基极发射极与集电极发射极之间的金属效应,考虑了基极发射极与基极集电极分布式电容效应；同时给出了一种半分析模型参数提取方法。提出的SiGe HBT小信号等效电路建模和参数提取方法通过测试发射极面积为0.2×5.9μm2的SiGe HBT器件验证,验证频率达到40GHz。
2)提出了一种基于MEXTRAM模型的SiGe HBT大信号模型,模型考虑了高基极电流低集电极电压状态下的软膝效应(Soft-knee effect),改进了模型直流精度；提出的模型由ADS电路仿真Verilog-A语言开发,并形成可用于电路设计ADS软件中的电路基本元件。
3)针对GP模型大信号工作状态下精度不足的缺点,提出了一种发射极面积可缩放SiGe HBT大信号模型,该模型考虑了自热效应和基极集电极雪崩效应。给出了一种改进的热阻参数提取技术,减小了基极电流变化对热阻的影响,提高了热阻参数提取精度。提出的尺寸可缩放模型与参数提取技术由发射极面积为0.3×20.3、0.3×13.9、0.3x9.9与0.3×1.9μm2的SiGe HBT器件验证。
4)提出了一种基于微带传输线理论的去嵌技术,与传统去嵌技术相比,该去嵌技术不仅能去除顶层金属引入的寄生效应,同时能去除下层金属的寄生影响,提出的去嵌技术通过面积为20×2um2的多晶硅电阻验证。
研究课题得到以下基金支持：华东师范大学博士研究生学术新人奖(项目编号：2010025),东南大学毫米波国家重点实验室开放项目(项目编号：K201002),教育部重点工程项目(项目编号：210080),国家自然基金(项目编号：61176036)
With the rapid growth of wireless communication, the device feature size continues to decrease. The transit frequencies for SiGe heterojunction bipolar transistors have been up to375GHz. As higher integration level, lower cost than III-V devices, SiGe HBT quickly becomes popular in mobile communication systems.
For improving integrated circuit design yield, reducing the design cycle time and the time to market in the CAD-based design flow, validated and accurate SiGe HBT models are needed properly to be implemented in the design tools. With longer development cycle, poor accuracy for the universal application of the SiGe HBT model, more effort is needed to pay for the RF SiGe HBT model to meet most of the IC design requirements. The parameter extraction and modeling of SiGe HBT is studied im this paper. Based on this research topic, the following research results achieved have been listed as following:
1) An improved small-signal equivalent-circuit model for silicon-germanium heteroj unction bipolar transistors is proposed. The proposed model has taken into account the effects of the base and collector metallisations. The prsented transistor model takes into account the parasitic effects such as substrate effect and the extrinsic capacitances. A semianalytical parameter-extraction procedure is proposed for the SiGe HBT small-singal modeling. The proposed modeling approach and parameter-extraction method are validated by SiGe HBT with0.2x5.9μm2emitter area up to40GHz.
2) An improved large-signal equivalent-circuit model for SiGe HBT based on the MEXTRAM model (level504.5) is proposed. The proposed model has taken into account the soft knee effect. The accuray for DC performance of the proposed model is improved. The model has been implemented into the ADS circuit simulator using Verilog-A program.
3) A scalable large-signal model for SiGe heterojunction bipolar transistors is presented. Compared with GP model, the proposed model has taken into account the self-heating effects and a new base-collector break-down description. An improved method for extracting thermal resistance is proposed. Compared with the conventional method, more accurate thermal resistance has been extracted by using the proposed approach. The proposed scalable model is verified by the SiGe HBT with emitter area of0.3x20.3,0.3x13.9,0.3x9.9and0.3x1.9μm2.
4) Accurate de-embedding technique based on transmission line theory is presented and applied to on-wafer polysilicon resistors modeling. Compared with the conventional de-embedding methods, not only the top metal layer but also the under-layer metal parasitics are removed from the on-wafer passive devices. The proposed de-embedding technique is validated by polysilicon resistors with occupying areas of20x2um2.
This work is supported in part by the Doctoral Post Graduate Academic New Artist of ECNU (grant no.2010025), the Open Research Program of State Key Laboratory of Millimeter Waves, Southeast University (grant no.K201002), the Key Project of Chinese Ministry of Education (grant no.210080) and National Natural Science Foundation of China (No.61176036).
为了提高射频SiGe工艺集成电路设计成功率,缩短设计时间,降低设计成本,需要建立工作在射频频段精确的SiGe HBT模型。目前普遍应用的SiGe HBT模型存在模型精度不够高,模型开发周期较长等等缺点,需要付出更多的努力,使得射频SiGe HBT模型更加成熟,满足绝大部分集成电路设计的要求。本文主要研究了射频微波SiGe HBT器件建模与参数提取技术,基于这个研究课题,取得了以下所述研究成果：
1)提出了一种改进的SiGe HBT小信号等效电路模型,该模型包含了基极发射极与集电极发射极之间的金属效应,考虑了基极发射极与基极集电极分布式电容效应；同时给出了一种半分析模型参数提取方法。提出的SiGe HBT小信号等效电路建模和参数提取方法通过测试发射极面积为0.2×5.9μm2的SiGe HBT器件验证,验证频率达到40GHz。
2)提出了一种基于MEXTRAM模型的SiGe HBT大信号模型,模型考虑了高基极电流低集电极电压状态下的软膝效应(Soft-knee effect),改进了模型直流精度；提出的模型由ADS电路仿真Verilog-A语言开发,并形成可用于电路设计ADS软件中的电路基本元件。
3)针对GP模型大信号工作状态下精度不足的缺点,提出了一种发射极面积可缩放SiGe HBT大信号模型,该模型考虑了自热效应和基极集电极雪崩效应。给出了一种改进的热阻参数提取技术,减小了基极电流变化对热阻的影响,提高了热阻参数提取精度。提出的尺寸可缩放模型与参数提取技术由发射极面积为0.3×20.3、0.3×13.9、0.3x9.9与0.3×1.9μm2的SiGe HBT器件验证。
4)提出了一种基于微带传输线理论的去嵌技术,与传统去嵌技术相比,该去嵌技术不仅能去除顶层金属引入的寄生效应,同时能去除下层金属的寄生影响,提出的去嵌技术通过面积为20×2um2的多晶硅电阻验证。
研究课题得到以下基金支持：华东师范大学博士研究生学术新人奖(项目编号：2010025),东南大学毫米波国家重点实验室开放项目(项目编号：K201002),教育部重点工程项目(项目编号：210080),国家自然基金(项目编号：61176036)
With the rapid growth of wireless communication, the device feature size continues to decrease. The transit frequencies for SiGe heterojunction bipolar transistors have been up to375GHz. As higher integration level, lower cost than III-V devices, SiGe HBT quickly becomes popular in mobile communication systems.
For improving integrated circuit design yield, reducing the design cycle time and the time to market in the CAD-based design flow, validated and accurate SiGe HBT models are needed properly to be implemented in the design tools. With longer development cycle, poor accuracy for the universal application of the SiGe HBT model, more effort is needed to pay for the RF SiGe HBT model to meet most of the IC design requirements. The parameter extraction and modeling of SiGe HBT is studied im this paper. Based on this research topic, the following research results achieved have been listed as following:
1) An improved small-signal equivalent-circuit model for silicon-germanium heteroj unction bipolar transistors is proposed. The proposed model has taken into account the effects of the base and collector metallisations. The prsented transistor model takes into account the parasitic effects such as substrate effect and the extrinsic capacitances. A semianalytical parameter-extraction procedure is proposed for the SiGe HBT small-singal modeling. The proposed modeling approach and parameter-extraction method are validated by SiGe HBT with0.2x5.9μm2emitter area up to40GHz.
2) An improved large-signal equivalent-circuit model for SiGe HBT based on the MEXTRAM model (level504.5) is proposed. The proposed model has taken into account the soft knee effect. The accuray for DC performance of the proposed model is improved. The model has been implemented into the ADS circuit simulator using Verilog-A program.
3) A scalable large-signal model for SiGe heterojunction bipolar transistors is presented. Compared with GP model, the proposed model has taken into account the self-heating effects and a new base-collector break-down description. An improved method for extracting thermal resistance is proposed. Compared with the conventional method, more accurate thermal resistance has been extracted by using the proposed approach. The proposed scalable model is verified by the SiGe HBT with emitter area of0.3x20.3,0.3x13.9,0.3x9.9and0.3x1.9μm2.
4) Accurate de-embedding technique based on transmission line theory is presented and applied to on-wafer polysilicon resistors modeling. Compared with the conventional de-embedding methods, not only the top metal layer but also the under-layer metal parasitics are removed from the on-wafer passive devices. The proposed de-embedding technique is validated by polysilicon resistors with occupying areas of20x2um2.
This work is supported in part by the Doctoral Post Graduate Academic New Artist of ECNU (grant no.2010025), the Open Research Program of State Key Laboratory of Millimeter Waves, Southeast University (grant no.K201002), the Key Project of Chinese Ministry of Education (grant no.210080) and National Natural Science Foundation of China (No.61176036).
引文
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