基于飞秒激光激励半导体材料的太赫兹源与探测技术
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摘要
太赫兹源与探测技术是太赫兹研究领域中最重要的部分,其中基于超快光脉冲激励半导体方式的太赫兹源与探测系统,由于其重要的研究及应用价值而受到广泛关注。本论文着重于研究超快激光激励半导体产生太赫兹辐射这一现象背后所蕴藏的物理机制,通过建立模型,利用解析、数值计算等手段获得太赫兹辐射强度的数学表达式,探讨影响太赫兹源发射效率以及太赫兹探测系统探测性能的各物理因素,最终获得提高太赫兹源效率与优化探测系统性能的方法。具体研究内容如下：
(1)利用drude-Lorentz模型描述半导体内光生载流子在内建电场与外部磁场作用下的运动以及利用电偶极矩辐射模型得到了基于半导体表面电场驱动光生电流产生太赫兹辐射的太赫兹电场表达式,研究了半导体外加磁场引起的太赫兹辐射增强现象,并通过计算模拟得到了外磁场的变化对太赫兹辐射的影响,给出了增强效率最高时,外加磁场的状态。另外还对比了几种常用半导体的太赫兹辐射效率和外磁场的增强因子。
(2)研究了基于光学整流非线性效应的太赫兹辐射源,通过理论推导和计算得到了太赫兹辐射场与泵浦光电场偏振方向、晶体表面晶向、晶体方位角之间的函数关系表达式。分别讨论了泵浦光正入射,斜入射情况下的太赫兹辐射场极值问题,通过软件绘图我们直观地对比了不同条件下的太赫兹辐射场状态,得到了使太赫兹辐射强度最大时,各参数应该满足的条件。
(3)研究了太赫兹电光取样探测系统中的平衡探测方法,获得了探测信号与探测光偏振方向、电光晶体表面晶向,晶体方位角之间的函数关系表达式,给出了探测信号最优时,各参数应该满足的条件。结合前面光整流太赫兹源内容研究了太赫兹收发器(terahertz transceiver)中电光晶体的晶面取向问题,给出了最优晶向。
(4)研究了晶体内非线性过程中由于色散引起的相位失配问题,分别讨论了非线性晶体作为太赫兹发射晶体以及作为太赫兹探测晶体时,相位失配效应带来的影响。首先横光学声子振动频率限制了太赫兹发射与探测的频谱宽度,其次由于光在晶体中的色散,相位失配将不可避免,晶体厚度的增大将面临非线性过程作用长度的增加及相位失配问题在频带上的扩展这一对矛盾体。我们通过模拟计算获得了不同晶体、不同晶体厚度、不同泵浦光脉宽条件下的太赫兹发射频谱和探测频谱,通过对这些频谱的对比分析,我们总结了选择非线性晶体以及晶体厚度的依据。
The technology of terahertz (THz) source and detection is the most significant part in the area of terahertz research. Specially, the terahertz source and detection systerms based on the method of exciting the semiconductor with an ultrafast pulse have attracted more attention because of important value of research and application. This manuscript focused on physical mechanisms in the process of terahertz radiation from the excited semiconductor. We obtained amplitude expressions of terahertz electric field using analytic and numerical computation. We discussed the generation efficiency and detection sensitivity of terahertz systerms and found physical factors which affected them strongly. Finally we demonstrated the optimal combination of those factors to optimize the working efficiency of terahertz generation & detection systerms. The details of my work are listed in the following:
(1) By employing the Drude-Lorentz model to analy the motion of photogenearted carriers in the semiconductor surface under the influence of both external magnetic field and built-in electric field, we obtained amplitude expressions of terahertz electric field. Then the effects on enhanceing terahertz radiation, of laser incident angle, intensity and direction of the external magnetic field, and the semiconductor's features were under discussion. We clarified the optimal orientation of external magnetic to maximize the output power of terahertz radiation.
(2) We studied the terahertz generation based on optical rectification and present a set of equations describing the terahertz generation in the zincblende crystals. Moreover, the dependence of terahertz emission efficiency on the polarization and incident angle of pump beam, the crystal-orientation, the azimuth angle is discussed. We also discussed the THz generation under the normal incidence and the oblique incidence of incident beam. Figures generated by MATLAB have been compared and analized to find the optimal combination of physical factors refered above.
(3) We introduced the terahertz detection of electro-optic sanpling and calculated the detected signal by the method of balance-detection. We show the dependence detection of THz field on the crystal-orientation and the polarization of probe beam. Since the orientation and polarization are chosen arbitrarily, the equations supplied by us are valid in general cases. For the experimental setup with transceiver which transmits and detects terahertz radiation in the same crystal, we have demonstrated the optimal combination of both parameters above to optimize the working efficiency.
(4) We studied the effect of phase mismatch in the nonlinear process generated inside the crystals, the optical dispersion in the electro-optic crystal affects the THz pulse detection. We found the transverse optical (TO) phonon resonance frequency limit the abilitivity of detection. We presented both the frequency spectrum of THz generation and the THz detection. The distribution of frequency spectrum is affected by the crystal materials, the thickness of crystal and the duration of incident pulse. According to the relevant physics formulas, We make a program by Matlab to simulate the changes of both the generated THz pulse and detecteded THz pulse with different parameters, we obtained some conclusion about the choices of crystal materials and the thickness, which make a great significant for THz source and detection systerm.
(1)利用drude-Lorentz模型描述半导体内光生载流子在内建电场与外部磁场作用下的运动以及利用电偶极矩辐射模型得到了基于半导体表面电场驱动光生电流产生太赫兹辐射的太赫兹电场表达式,研究了半导体外加磁场引起的太赫兹辐射增强现象,并通过计算模拟得到了外磁场的变化对太赫兹辐射的影响,给出了增强效率最高时,外加磁场的状态。另外还对比了几种常用半导体的太赫兹辐射效率和外磁场的增强因子。
(2)研究了基于光学整流非线性效应的太赫兹辐射源,通过理论推导和计算得到了太赫兹辐射场与泵浦光电场偏振方向、晶体表面晶向、晶体方位角之间的函数关系表达式。分别讨论了泵浦光正入射,斜入射情况下的太赫兹辐射场极值问题,通过软件绘图我们直观地对比了不同条件下的太赫兹辐射场状态,得到了使太赫兹辐射强度最大时,各参数应该满足的条件。
(3)研究了太赫兹电光取样探测系统中的平衡探测方法,获得了探测信号与探测光偏振方向、电光晶体表面晶向,晶体方位角之间的函数关系表达式,给出了探测信号最优时,各参数应该满足的条件。结合前面光整流太赫兹源内容研究了太赫兹收发器(terahertz transceiver)中电光晶体的晶面取向问题,给出了最优晶向。
(4)研究了晶体内非线性过程中由于色散引起的相位失配问题,分别讨论了非线性晶体作为太赫兹发射晶体以及作为太赫兹探测晶体时,相位失配效应带来的影响。首先横光学声子振动频率限制了太赫兹发射与探测的频谱宽度,其次由于光在晶体中的色散,相位失配将不可避免,晶体厚度的增大将面临非线性过程作用长度的增加及相位失配问题在频带上的扩展这一对矛盾体。我们通过模拟计算获得了不同晶体、不同晶体厚度、不同泵浦光脉宽条件下的太赫兹发射频谱和探测频谱,通过对这些频谱的对比分析,我们总结了选择非线性晶体以及晶体厚度的依据。
The technology of terahertz (THz) source and detection is the most significant part in the area of terahertz research. Specially, the terahertz source and detection systerms based on the method of exciting the semiconductor with an ultrafast pulse have attracted more attention because of important value of research and application. This manuscript focused on physical mechanisms in the process of terahertz radiation from the excited semiconductor. We obtained amplitude expressions of terahertz electric field using analytic and numerical computation. We discussed the generation efficiency and detection sensitivity of terahertz systerms and found physical factors which affected them strongly. Finally we demonstrated the optimal combination of those factors to optimize the working efficiency of terahertz generation & detection systerms. The details of my work are listed in the following:
(1) By employing the Drude-Lorentz model to analy the motion of photogenearted carriers in the semiconductor surface under the influence of both external magnetic field and built-in electric field, we obtained amplitude expressions of terahertz electric field. Then the effects on enhanceing terahertz radiation, of laser incident angle, intensity and direction of the external magnetic field, and the semiconductor's features were under discussion. We clarified the optimal orientation of external magnetic to maximize the output power of terahertz radiation.
(2) We studied the terahertz generation based on optical rectification and present a set of equations describing the terahertz generation in the zincblende crystals. Moreover, the dependence of terahertz emission efficiency on the polarization and incident angle of pump beam, the crystal-orientation, the azimuth angle is discussed. We also discussed the THz generation under the normal incidence and the oblique incidence of incident beam. Figures generated by MATLAB have been compared and analized to find the optimal combination of physical factors refered above.
(3) We introduced the terahertz detection of electro-optic sanpling and calculated the detected signal by the method of balance-detection. We show the dependence detection of THz field on the crystal-orientation and the polarization of probe beam. Since the orientation and polarization are chosen arbitrarily, the equations supplied by us are valid in general cases. For the experimental setup with transceiver which transmits and detects terahertz radiation in the same crystal, we have demonstrated the optimal combination of both parameters above to optimize the working efficiency.
(4) We studied the effect of phase mismatch in the nonlinear process generated inside the crystals, the optical dispersion in the electro-optic crystal affects the THz pulse detection. We found the transverse optical (TO) phonon resonance frequency limit the abilitivity of detection. We presented both the frequency spectrum of THz generation and the THz detection. The distribution of frequency spectrum is affected by the crystal materials, the thickness of crystal and the duration of incident pulse. According to the relevant physics formulas, We make a program by Matlab to simulate the changes of both the generated THz pulse and detecteded THz pulse with different parameters, we obtained some conclusion about the choices of crystal materials and the thickness, which make a great significant for THz source and detection systerm.
引文
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