纳米压印复型精度控制研究
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摘要
物质在纳米尺度下表现出的奇异现象和规律将改变相关理论的现有框架，使人们对物质世界的认识进入到崭新的阶段，孕育着新的技术革命，给材料、信息、绿色制造、生物和医学等领域带来极大的发展空间。纳米科技已成为许多国家提升核心竞争力的战略选择，也是我国有望实现跨越式发展的领域之一。
纳米结构是研究纳米科技的物质基础，随着集成电路特征尺寸的不断减小，传统的光刻技术正面临成本和工艺的重重困难，已成为当今世界科学研究亟待解决的难题之一，纳米压印技术由此而生。纳米压印技术作为一种新的纳米结构制造工艺，与其它光刻技术相比，具有加工精度高、生产效率高、成本低、易于实现产业化的突出优点，有望尽快实现几十纳米特征线宽结构的加工、进而在集成电路、微细加工、生物传感器、光学器件等应用领域获得重大突破，是国际学术界研究的前沿课题之一，已经引起各国政府高度重视，本文的研究正是在这样的背景下进行的，课题研究得到上海市科技发展基金项目的资助。
尽管纳米压印技术原理简单、具有无法替代的优势，但由于纳米压印工艺加工的对象是纳米级图形结构，其操作对象极精密，所以工艺过程的每一步都对设备和操作有近似苛刻的严要求，技术含量很高，且这项新技术本身尚处于发展前期，设备和工艺还在摸索阶段，有许多急需解决的技术难题，尤其是调平和对准系统精度性能、模板加工精度性能、压印图形转移层性能及涂覆控制、纳米压印工艺等更成为限制纳米压印技术应用推广的瓶颈，是直接影响纳米压印复型精度的关键技术。
纳米压印技术的强大生命力就在于其极高的加工精度，因此本文沿纳米压印工艺路线，以纳米压印关键技术为节点，围绕提高纳米压印复型精度目的，研究了冷压印工艺中影响压印复型精度的各种因素，对压印设备因素中直接影响纳米压印复型精度的核心因素——纳米压印设备调平和对准用精密定位系统进行了详细研究。构建了二级系统动力学控制模型，建立了二级驱动系统状态空间数学模型。对二级驱动精密定位系统进行了精度分析，通过建模分析了系统结构参数对超精密定位系统精度的影响，并对系统精度进行了仿真实验。应用滑模变结构理论对宏、微二级驱动系统进行复合控制，通过正交试验，得到了压印复型精度较高的二级系统控制方案，并通过试验验证了控制方案的有效性和可行性，调平后的压印复型图案清晰、留膜厚度均匀、压印复型精度高；控制方案优化后对准精度达到245nm。
结构和工艺参数是直接影响压印复型精度的内在因素，详细研究了冷压印工艺中直接影响纳米压印复型精度的结构和工艺因素，即模板和图形转移介质因素。研究了模板材料性能和结构以及抗粘连技术、模板图形特征结构对压印复型精度的影响，建立了模板设计数学模型；研究了光刻胶物理化学性能和图形转移层厚度以及均匀性对压印复型精度的影响，建立了图形转移层厚度与涂覆工艺控制的数学模型。在对压印复型精度影响因素综合分析的基础上，做了冷压印正交试验。并用极差分析法对实验结果进行了分析，得出了各因素对压印复型精度指标的影响力大小次序，找出了使压印复型精度(试验指标)值变化最显著的工艺因素；同时得到了各因素、水平对压印复型精度的影响变化规律；经过优化得到了一套压印复型精度较高的冷压印工艺方案，并应用该方案在硅基图形转移层上得到了小于10％的复型精度。为制定合理的纳米压印工艺提供了实验依据。
本文的创新之处主要可以归纳为以下几点：
1、采用宏、微二级驱动超精密定位系统实现纳米压印设备调平和对准功能，应用滑模变结构理论对宏、微二级驱动系统进行复合控制，控制方案优化后纳米压印设备调平和对准性能好，对准精度达到了245nm。
2、提出一种压印复型精度高的冷压印工艺控制方法，并应用该方法通过试验在硅基图形转移层上得到了小于10％的复型精度。
3、通过正交试验和极差分析，找到了纳米冷压印工艺中影响复型精度的各主要因素与压印复型精度之间的变化规律，并得到了各因素影响力大小次序。
4、建立了冷压印工艺模板设计数学模型，通过试验定性分析了模板图形结构对压印复型精度的影响。
5、建立了冷压印工艺图形转移层厚度与涂覆工艺参数控制数学模型，并通过实例验证了其合理性。
Along with the decrease of integrated circuit's critical dimension, conventional projection lithography is facing the problem of cost and technology, becoming one of difficult science research problems to be solved in the world .Conventional theory may no longer apply and new phenomena emerge, nanoimprint lithography. It has the advantage over conventional nanofabrication methods, high resolution, low cost and high throughput, suitable for industrial production.
Although nanoimprint lithography has great advantage and prospect application, the nanometer stamping craft processing object is the nanometer level pattern structure, its operation object extremely precise. Therefore each step of technological process has the approximate strict request to the equipment and the operation, the technical content is very high, also this new technical itself still was in the development earlier period, many technical difficult problem should be solved, such as stamp design and fabrication; anti-sticking technology; physical and chemistry performance of resist; the thickness and uniformity of transfer layer.
Multifarious nanoimprint lithography techniques are described in the paper. All these techniques are classified according to their process and principle. Their advantages and disadvantages are shown. Mainly, do research in room temperature lithography.
Research in the principle and process of nanoimprint and duplicate precision related to many different causes: method of stamp design and fabrication; anti-sticking technology; physical and chemistry performance of resist; the thickness and uniformity of transfer layer.
According to alignment requirement, design the dual level precise positioning system and the performance analysis; dynamics analysis, dual stage system control model, analyzed the system design parameter to the ultra precise positioning system; finally confirm that the system has achieved the precision.
In the area of controller design, the paper uses increment PID method, nerve cell self adaptive PID method to control linear motor and micro table.designs a sliding
adaptive controller for the total macro-micro system. Nerve cell is the basic cell of neural net, it has self learning and adaptive ability, the algorithm is easy to calculate. The traditional PID adjuster has a simple structure, it can be easy to adjust, its parameter adjustment has a great relationship with engineering index, but its arameter can not be adjusted in real time and it also can not have a satisfying effect in controlling complex processing or time slow varying system. The combination of two method can solve these problems.
At last, the comparison and analysis of experimental results validated the feasibility and advantage of dual-driven technique, the dual active high speed high precision robot has performances of large displacement, high precision, high speed, high resolution.
In the paper, study of other two technologies which directly influence nanoimprint duplicate precision, namely stamp and transfer layer template technology, including the method of stamp design and fabrication; anti-sticking technology; physical and chemistry performance of resist; the thickness and uniformity of transfer layer; Finally do a lot of experiments about room temperature lithography to prove the principle.
Through the orthogonal experiment, it has confirmed that dual level precise positioning system is validity and the feasibility, the duplicate precision is high. After the leveling, stamping duplicate design clear, keeps film thickness evenly, the stamping duplicate precision is high; the control optimizes aims at the precision to be possible to reach 245nm
Take room temperature lithography process as the basis, closely revolved to enhance technologies which directly influence nanoimprint duplicate precision, namely stamp and transfer layer template technology, including the method of stamp design and fabrication; anti-sticking technology; physical and chemistry performance of resist; the thickness and uniformity of transfer layer;
Establish the mathematical model of transfer layer thickness and the spin coating process.
In to the stamping duplicate precision influence factor generalized analysis foundation in, withdrew influence to be big, to have a condition controllable dish factor, in the application mathematical statistic experiment design orthogonal experiment design law, take these 7 influences factor as the orthogonal experiment factor. And has carried on the analysis with in the data analysis and the theory of error range analytic method to the experimental result, has obtained various factors to the stamping duplicate precision target influence size order, explained factor when experimental scope value, causes the stamping duplicate precision (experimental target) the value change to be biggest; Simultaneously obtained various factors, the level to the stamping duplicate precision influence change tendency.
Finally do a lot of experiments about room temperature lithography to prove the principle. Obtained a set of stampings duplicate precisions, after the optimization, obtained on the silicon base pattern have been smaller than 10% duplicate precision.
In the finality, the problems requiring further studies are discussed.
纳米结构是研究纳米科技的物质基础，随着集成电路特征尺寸的不断减小，传统的光刻技术正面临成本和工艺的重重困难，已成为当今世界科学研究亟待解决的难题之一，纳米压印技术由此而生。纳米压印技术作为一种新的纳米结构制造工艺，与其它光刻技术相比，具有加工精度高、生产效率高、成本低、易于实现产业化的突出优点，有望尽快实现几十纳米特征线宽结构的加工、进而在集成电路、微细加工、生物传感器、光学器件等应用领域获得重大突破，是国际学术界研究的前沿课题之一，已经引起各国政府高度重视，本文的研究正是在这样的背景下进行的，课题研究得到上海市科技发展基金项目的资助。
尽管纳米压印技术原理简单、具有无法替代的优势，但由于纳米压印工艺加工的对象是纳米级图形结构，其操作对象极精密，所以工艺过程的每一步都对设备和操作有近似苛刻的严要求，技术含量很高，且这项新技术本身尚处于发展前期，设备和工艺还在摸索阶段，有许多急需解决的技术难题，尤其是调平和对准系统精度性能、模板加工精度性能、压印图形转移层性能及涂覆控制、纳米压印工艺等更成为限制纳米压印技术应用推广的瓶颈，是直接影响纳米压印复型精度的关键技术。
纳米压印技术的强大生命力就在于其极高的加工精度，因此本文沿纳米压印工艺路线，以纳米压印关键技术为节点，围绕提高纳米压印复型精度目的，研究了冷压印工艺中影响压印复型精度的各种因素，对压印设备因素中直接影响纳米压印复型精度的核心因素——纳米压印设备调平和对准用精密定位系统进行了详细研究。构建了二级系统动力学控制模型，建立了二级驱动系统状态空间数学模型。对二级驱动精密定位系统进行了精度分析，通过建模分析了系统结构参数对超精密定位系统精度的影响，并对系统精度进行了仿真实验。应用滑模变结构理论对宏、微二级驱动系统进行复合控制，通过正交试验，得到了压印复型精度较高的二级系统控制方案，并通过试验验证了控制方案的有效性和可行性，调平后的压印复型图案清晰、留膜厚度均匀、压印复型精度高；控制方案优化后对准精度达到245nm。
结构和工艺参数是直接影响压印复型精度的内在因素，详细研究了冷压印工艺中直接影响纳米压印复型精度的结构和工艺因素，即模板和图形转移介质因素。研究了模板材料性能和结构以及抗粘连技术、模板图形特征结构对压印复型精度的影响，建立了模板设计数学模型；研究了光刻胶物理化学性能和图形转移层厚度以及均匀性对压印复型精度的影响，建立了图形转移层厚度与涂覆工艺控制的数学模型。在对压印复型精度影响因素综合分析的基础上，做了冷压印正交试验。并用极差分析法对实验结果进行了分析，得出了各因素对压印复型精度指标的影响力大小次序，找出了使压印复型精度(试验指标)值变化最显著的工艺因素；同时得到了各因素、水平对压印复型精度的影响变化规律；经过优化得到了一套压印复型精度较高的冷压印工艺方案，并应用该方案在硅基图形转移层上得到了小于10％的复型精度。为制定合理的纳米压印工艺提供了实验依据。
本文的创新之处主要可以归纳为以下几点：
1、采用宏、微二级驱动超精密定位系统实现纳米压印设备调平和对准功能，应用滑模变结构理论对宏、微二级驱动系统进行复合控制，控制方案优化后纳米压印设备调平和对准性能好，对准精度达到了245nm。
2、提出一种压印复型精度高的冷压印工艺控制方法，并应用该方法通过试验在硅基图形转移层上得到了小于10％的复型精度。
3、通过正交试验和极差分析，找到了纳米冷压印工艺中影响复型精度的各主要因素与压印复型精度之间的变化规律，并得到了各因素影响力大小次序。
4、建立了冷压印工艺模板设计数学模型，通过试验定性分析了模板图形结构对压印复型精度的影响。
5、建立了冷压印工艺图形转移层厚度与涂覆工艺参数控制数学模型，并通过实例验证了其合理性。
Along with the decrease of integrated circuit's critical dimension, conventional projection lithography is facing the problem of cost and technology, becoming one of difficult science research problems to be solved in the world .Conventional theory may no longer apply and new phenomena emerge, nanoimprint lithography. It has the advantage over conventional nanofabrication methods, high resolution, low cost and high throughput, suitable for industrial production.
Although nanoimprint lithography has great advantage and prospect application, the nanometer stamping craft processing object is the nanometer level pattern structure, its operation object extremely precise. Therefore each step of technological process has the approximate strict request to the equipment and the operation, the technical content is very high, also this new technical itself still was in the development earlier period, many technical difficult problem should be solved, such as stamp design and fabrication; anti-sticking technology; physical and chemistry performance of resist; the thickness and uniformity of transfer layer.
Multifarious nanoimprint lithography techniques are described in the paper. All these techniques are classified according to their process and principle. Their advantages and disadvantages are shown. Mainly, do research in room temperature lithography.
Research in the principle and process of nanoimprint and duplicate precision related to many different causes: method of stamp design and fabrication; anti-sticking technology; physical and chemistry performance of resist; the thickness and uniformity of transfer layer.
According to alignment requirement, design the dual level precise positioning system and the performance analysis; dynamics analysis, dual stage system control model, analyzed the system design parameter to the ultra precise positioning system; finally confirm that the system has achieved the precision.
In the area of controller design, the paper uses increment PID method, nerve cell self adaptive PID method to control linear motor and micro table.designs a sliding
adaptive controller for the total macro-micro system. Nerve cell is the basic cell of neural net, it has self learning and adaptive ability, the algorithm is easy to calculate. The traditional PID adjuster has a simple structure, it can be easy to adjust, its parameter adjustment has a great relationship with engineering index, but its arameter can not be adjusted in real time and it also can not have a satisfying effect in controlling complex processing or time slow varying system. The combination of two method can solve these problems.
At last, the comparison and analysis of experimental results validated the feasibility and advantage of dual-driven technique, the dual active high speed high precision robot has performances of large displacement, high precision, high speed, high resolution.
In the paper, study of other two technologies which directly influence nanoimprint duplicate precision, namely stamp and transfer layer template technology, including the method of stamp design and fabrication; anti-sticking technology; physical and chemistry performance of resist; the thickness and uniformity of transfer layer; Finally do a lot of experiments about room temperature lithography to prove the principle.
Through the orthogonal experiment, it has confirmed that dual level precise positioning system is validity and the feasibility, the duplicate precision is high. After the leveling, stamping duplicate design clear, keeps film thickness evenly, the stamping duplicate precision is high; the control optimizes aims at the precision to be possible to reach 245nm
Take room temperature lithography process as the basis, closely revolved to enhance technologies which directly influence nanoimprint duplicate precision, namely stamp and transfer layer template technology, including the method of stamp design and fabrication; anti-sticking technology; physical and chemistry performance of resist; the thickness and uniformity of transfer layer;
Establish the mathematical model of transfer layer thickness and the spin coating process.
In to the stamping duplicate precision influence factor generalized analysis foundation in, withdrew influence to be big, to have a condition controllable dish factor, in the application mathematical statistic experiment design orthogonal experiment design law, take these 7 influences factor as the orthogonal experiment factor. And has carried on the analysis with in the data analysis and the theory of error range analytic method to the experimental result, has obtained various factors to the stamping duplicate precision target influence size order, explained factor when experimental scope value, causes the stamping duplicate precision (experimental target) the value change to be biggest; Simultaneously obtained various factors, the level to the stamping duplicate precision influence change tendency.
Finally do a lot of experiments about room temperature lithography to prove the principle. Obtained a set of stampings duplicate precisions, after the optimization, obtained on the silicon base pattern have been smaller than 10% duplicate precision.
In the finality, the problems requiring further studies are discussed.
引文
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