磁控反应溅射AIN薄膜的制备工艺与性能研究
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摘要
金刚石具有高红外透过率、低吸收系数、抗热冲击性好、耐磨擦等一系列优异的性能，是制造高速飞行器红外窗口和头罩的理想材料。然而金刚石在750℃以上时很容易发生氧化，导致透过率急剧下降。因此在金刚石表面镀制抗氧化增透涂层就成为满足其在高速、高温下应用的关键技术。氮化铝(AlN)具有优良的物理、化学性能，并且与金刚石附着良好。在国外，AlN用作金刚石抗氧化涂层的研究已经展开，并取得进展；而在国内，有关AlN光学保护涂层的研究还未见报道。本文主要研究了氮化铝薄膜的制备工艺及其对薄膜结构、性能的影响规律，为将氮化铝用作金刚石的抗氧化涂层奠定了基础。主要研究成果如下：
利用OPFCAD软件在金刚石衬底上设计了AlN增透保护膜系，并对所设计的膜系进行了结构敏感因子(n,d)及结构偏差分析。金刚石衬底双面镀AlN膜系，在8～11.5μm波段的平均透过率大于85％，可满足导弹头罩设计和使用的要求。
在BMS450型磁控溅射镀膜机上优化出了制备AlN薄膜的工艺参数范围，并揭示了气体流量、射频功率、靶基距、衬底温度、溅射气压等参数对薄膜沉积速率的影响规律。正交试验设计结果表明射频功率对沉积速率的影响是最大的，并且确定了薄膜最大沉积速率的工艺参数。
结合实验结果对靶面的氮化反应进行了理论分析，解释了氮气流量对沉积速率的影响规律。
对所制备的AlN薄膜进行了X射线光电子谱(XPS)、X射线衍射(XRD)及显微硬度分析。由XPS分析结果可知，薄膜中的Al、N元素形成了AlN化合物，表面可能形成了非晶的氧化铝或氧氮化铝薄层。XRD分析结果表明，所制备的AlN薄膜为六角晶型，380℃以下沉积薄膜的结构主要为非晶态，随着衬底温度的升高，薄膜逐渐开始晶化。
Diamond has excellent properties such as good transmission in the infrared, low absorption coefficient, high resistance to thermal shock and friction. Diamond is an ideal material for airborne windows and domes for high-speed flight. However, diamond is subject to oxidation in air at temperatures greater than 750℃, and the optical transmission is degraded sharp. In order to meet the need for applications of high-speed or high-temperature, the anti-oxidation and anti-reflective films must be prepared on the diamond surface. Aluminum nitride (A1N) are promising anti-oxidation films with good physical, chemical properties and good adhesion to diamond. Great progress has been made in the researches about A1N anti-oxidation films overseas. But no domestic work has been done on A1N optical and protective films. Researches of the paper mostly concentrate on preparation of A1N films and the functions of experiment parameters on films structure and properties. The main contents and results are listed as follows:
With the help of OPFCAD software, anti-reflective films containing A1N on the diamond substrate are designed and analysis of structure sensitive factor and variation are done. After A1N films deposited on the surfaces of diamond, the average transmittance in 8 - 11.4μm waveband can exceed 85%, which can meet the requirements of missile dome in infrared application.
A1N films are prepared on silicon substrates by radio frequency magnetron reactive sputtering in order to get the functions of the main experiment parameters such as RF power, gas flow, vacuum gas pressure, target-substrate distance and substrate temperature on deposition rate of films. The optimized parameters ranges are obtained by considering films deposition rate, composition and structure. The orthogonal experiment results prove that the effect of RF power on deposition rate is most significant. The experiment parameters of the biggest deposition rate are decided.
On the basis of experiment results, the nitride reaction on target surface as well as the dependence of deposition rate on N2 flow rate is analyzed theoretically.
XPS analysis as well as XRD and Vickers hardness is made. XPS results confirm the formation of A1N, and the formation of thin layer of amorphous aluminum oxide or aluminum oxynitrides on films surface is deduced. XRD results show that
deposited A1N films are hexagonal, and films are amorphous under 380℃ when depositing, films come into crystallizing as the substrate temperature increases.
利用OPFCAD软件在金刚石衬底上设计了AlN增透保护膜系，并对所设计的膜系进行了结构敏感因子(n,d)及结构偏差分析。金刚石衬底双面镀AlN膜系，在8～11.5μm波段的平均透过率大于85％，可满足导弹头罩设计和使用的要求。
在BMS450型磁控溅射镀膜机上优化出了制备AlN薄膜的工艺参数范围，并揭示了气体流量、射频功率、靶基距、衬底温度、溅射气压等参数对薄膜沉积速率的影响规律。正交试验设计结果表明射频功率对沉积速率的影响是最大的，并且确定了薄膜最大沉积速率的工艺参数。
结合实验结果对靶面的氮化反应进行了理论分析，解释了氮气流量对沉积速率的影响规律。
对所制备的AlN薄膜进行了X射线光电子谱(XPS)、X射线衍射(XRD)及显微硬度分析。由XPS分析结果可知，薄膜中的Al、N元素形成了AlN化合物，表面可能形成了非晶的氧化铝或氧氮化铝薄层。XRD分析结果表明，所制备的AlN薄膜为六角晶型，380℃以下沉积薄膜的结构主要为非晶态，随着衬底温度的升高，薄膜逐渐开始晶化。
Diamond has excellent properties such as good transmission in the infrared, low absorption coefficient, high resistance to thermal shock and friction. Diamond is an ideal material for airborne windows and domes for high-speed flight. However, diamond is subject to oxidation in air at temperatures greater than 750℃, and the optical transmission is degraded sharp. In order to meet the need for applications of high-speed or high-temperature, the anti-oxidation and anti-reflective films must be prepared on the diamond surface. Aluminum nitride (A1N) are promising anti-oxidation films with good physical, chemical properties and good adhesion to diamond. Great progress has been made in the researches about A1N anti-oxidation films overseas. But no domestic work has been done on A1N optical and protective films. Researches of the paper mostly concentrate on preparation of A1N films and the functions of experiment parameters on films structure and properties. The main contents and results are listed as follows:
With the help of OPFCAD software, anti-reflective films containing A1N on the diamond substrate are designed and analysis of structure sensitive factor and variation are done. After A1N films deposited on the surfaces of diamond, the average transmittance in 8 - 11.4μm waveband can exceed 85%, which can meet the requirements of missile dome in infrared application.
A1N films are prepared on silicon substrates by radio frequency magnetron reactive sputtering in order to get the functions of the main experiment parameters such as RF power, gas flow, vacuum gas pressure, target-substrate distance and substrate temperature on deposition rate of films. The optimized parameters ranges are obtained by considering films deposition rate, composition and structure. The orthogonal experiment results prove that the effect of RF power on deposition rate is most significant. The experiment parameters of the biggest deposition rate are decided.
On the basis of experiment results, the nitride reaction on target surface as well as the dependence of deposition rate on N2 flow rate is analyzed theoretically.
XPS analysis as well as XRD and Vickers hardness is made. XPS results confirm the formation of A1N, and the formation of thin layer of amorphous aluminum oxide or aluminum oxynitrides on films surface is deduced. XRD results show that
deposited A1N films are hexagonal, and films are amorphous under 380℃ when depositing, films come into crystallizing as the substrate temperature increases.
引文
1 赵秀丽．红外光学系统设计．机械工业出版社，1986
2 张贵峰．新型红外增透膜与保护膜．红外技术．1995，17(5)：23～28
3 余怀之，郑岳华，刘建平等．红外透射材料ZnS．激光与红外．1997，27(6)：366～370
4 李敬起，郭晚土，孙亦宁．金刚石红外增透保护膜．真空与低温，1996，9(3)：131～133
5 Daniel C. Harris. Properties of Diamond for Window and Dome Applications.Proc. SPIE 1994,2286:218～228
6 RS Sussmann, JR Brandon, et al. High Quality CVD Diamond: A Material for Optical and Particle Detector Applications. Diamond Relat Mater, in press
7 C.E.Johnson, M.A.S.Hasting, et al. Thermogravimetric Analysis of the Oxidation of CVD Diamond Films. J. Mater. Res. 1990,2320:11
8 CJH Wort, CG Sweeney, et al. Thermal Properties of Bulk Polycrystalline CVD Diamond. Diamond Relat Mater. 1994,1158:3
9 Daniel C. Harris. Materials for Infrared Windows and Domes. SPIE Optical Engineering Press, 1999:321～335
10 K.A.Klemm, H.S.Patterson, et al. Protective Optical Coatings for Diamond Infrared Windows. Proc. SPIE 1994,2286:347～353
11 汪洪海，郑启光，魏学勤等．反应式脉冲激光溅射淀积AlN薄膜化学稳定性研究．激光杂志．1998，19(6)：28～31
12 S.P. McGeoch, F. Placido, et al. Coatings for the Protection of Diamond in High-temperature Environments. Diamond Relat Mater, 1999,8:916～919
13 潘俊德，田林海，莘海维等．电子浴辅助阴极电弧源活性反应离子镀合成ALN薄膜．热加工工艺，2000，(4)：22～24
14 田民波，刘德令．薄膜科学与技术手册(上册)．机械工业出版社，1991
15 黄继颇，王连卫，高剑侠等．脉冲准分子激光沉积AlN薄膜的研究．中国激光．1999，26(9)：815～818
16 B.D.Chrisey, G.K.Bubler. Pulsed Laser Deposition of Thin Films. New York:John Wiley and Sons Inc, 1994:160～166
17 汪洪海，郑启光，魏学勤等．等离子体辅助反应式脉冲激光熔蚀制备ALN薄膜的低温生长．功能材料．1999，30(2)：204～206
18 汪洪海，郑启光，丘军林等．激光熔蚀反应沉淀ALN薄膜残余应力及热稳定性的研究．中国激光．2000，27(9)：857～860
19 朱景芝．碳化锗红外增透保护膜的制备工艺与性能研究．西北工业大学硕士学位论文，1997
20 张伟，张仕国，袁骏．Si衬底上用反应蒸发法制备ALN单晶薄膜．半导体学报．1997，18(8)：568～572
21 Jae Hyoung Choi, Jeong Yong Lee, et al. Phase Evolution in Aluminum Nitride Thin Films on Si(100) Prepared by Radio Frequency Magnetron Sputtering.Thin Solid Films,2001,384:166～172
22 潘俊德，田林海，莘海维等．电子浴辅助阴极电弧源法合成AlN薄膜机理初探．热加工工艺．2001，(1)：5～6
23 Bing-Hwai Hwang, Chi-Shan Chen, et al. Growth Mechanism of Reactively Sputtered Aluminum Nitride Thin Films. Materials Science and Engineering.2002, A325:380～388
24 Hwan-Chu Lee, Ki-Young Lee, et al. Effect of Hydrogen Addition on the Preferred Orientation of AlN Films Prepared by Reactive Sputtering. Thin Solid Films. 1995, 271:50～55
25 Ig-Hyeon and Seon-Hyo Kim. Effect of N_2~+ Ion Bombardment on the Compositional Change and Residual Stress of AlN Film Synthesized by Ion Beam Assisted Deposition. J.Vac. Technol. 1995, A13(6):2814～2818
26 M.Akiyma, C.Xu, K.Nonaka. Influence of Sputtering Atmosphere on Crystallinity and Crystal Orientation of AlN Thin Films Deposited on Polycrystalline MoSi_2 Substrates. J. Mate. Sci. 1998,33:2463～2467
27 武海顺，许小红，张富强等．氮化铝压电薄膜的晶面择优取向．真空科学与技术．2000，20(6)：442～446
28 Chu C, Ong P P, Che H.F. TOF Study of Ppulsed Laser Ablation of Aluminum Nitride for Thin Film Growth. Appl. Surf. Sci.1999,137:91～97
29 缪向水，胡用时，林更琪等．AlN和AlSiN薄膜的制备工艺及其光学特性．华中理工大学学报．1995，26(Sup．1)：185～188
30 V. Dumitru, C.Morosanu, et al. Optical and Sstructural Differences between RF and DC Al_xN_y Magnetron Sputtered Films. Thin Solid Films. 2000, 359:17～20
31 S.P. McGeoch, EM.Waddell, et al. Aluminum Nitride Coatings for Protection of Diamond at High Temperature in Air. Proc. SPIE1999,3705:163～169
32 K.A.Klemm, L.F. Johnson, et al. Modification of Properties of Ion-beam Sputtered Thin Films by Low-energy Ion Bombardment. Mat. Res. Soc. Symp. Proc.1991,223:295
33 Holmquist GA. US Patent 199507-62-0928
34 Johnson, Linda F, et al. US Patent N96-29924
35 K.J.Grannen, D.V. Tsu, et al. Oxidation Studies of Fluorine Containing Diamond Films. Appl.Phys. Lett. 1991,59(6):745～747
36 K.Miyata, K.Kobashi. Air Oxidation of Undoped and B-Doped Polycrystalline Diamond Films at High Temperature. J.Mater. Res. 11:296～304
37 R.E.Sah, C.J.Kelly, et al. Amorphous Hydrogenated Carbon-germanium Films for Hard Multilayers IR Optical Coatings. Proc. SPIE 1990,1275:59
38 林永昌，卢维强．光学薄膜原理．国防工业出版社，1990
39 尹树百．薄膜光学—理论与实践．科学出版社，1987
40 唐晋发，顾培夫．薄膜光学与技术．机械工业出版社，1989
41 宋健全．ZnS头罩增透保护膜系的设计、制备及计算机模拟．西北工业大学博士论文．2001
42 周健，林永昌．一种新的膜系设计方法—Neddle法．光学学报．1997，17(10)：1445～1449
43 林永昌，顾永琳，张诚等．针法与初始膜系设计．光学学报．1997，(10)：27～31
44 Paul Klocek, Thomas McKenna, John Trombetta. Thermo-optic, thermo-mecha-nical, and electromagnetic effects in IR windows and domes, and the rationale for GaAs,GaP, and diamond. Proc. SPIE 1994,2286:71～90
45 范志刚，张伟，李以贵等．多层介质光学膜系的误差分析—膜层厚度变化的灵敏度因子．激光技术，1996，20(4)：236～240
46 P.J.Kelly, R.D.Arnell. Magnetron Sputtering: A Review of Developments and
Application. Vaccum.2000,(56): 159～172
47 王力衡，黄运添，郑海涛．薄膜技术．清华大学出版社．1991
48 严一心，林鸿海．薄膜技术．国防工业出版社，1994
49 陈国平．薄膜科学与技术．东南大学出版社，1993
50 J.L.Vossoen, W. Kerfned. Thin Film Processing. Academic Press. 1978
51 李学丹，万学英，姜祥祺等．真空沉积技术．浙江大学出版社．1994
52 叶宪曾，江子伟，李赛君等．仪器分析教程．北京大学出版社．1997
53 张随新，陈国平．磁控反应溅射氧化锡膜的工艺研究．真空科学与技术．1995，15(6)：415～419
54 Alexey A Fomin, Vladislav Akhmator, et al. Magnetron Sputtering System Stabilisation for High Rate Deposition of AlN Films. Vacuum. 1998, 49(3):247～251
55 C.R.Aita, C.J.Gawlak. The Dependence of Aluminum Nitride Film Crystallography on Sputtering Plasma Composition. J.Vac. Sci. Technol. 1983,Al(2):403～406
56 F. Shinoki and A.Itoh. Mechanism of RF Reactive Sputtering. J.Appl. Phys. 1975,46(8):3381～3384
57 J．L．沃森，W．克恩等．薄膜加工工艺．机械工业出版社．1987
58 K. Sugiyama, K.Taniguchi, et al. Preparation of Orientated Aluminium Nitride Films by Radio-frequency Reactive Sputtering. J.Mate. Sci.Lett. 1990,9:489～492
59 于忠奇．硫化锌头罩镀膜均匀性的理论分析与实验研究．西北工业大学硕士学位论文．2002
60 L.B.Jonsson, T.Nyberg, S.Berg. Target Compound Layer Formation during Reactive Sputtering. J. Vac. Sci. Technol. 1999, A17(4): 1827～1831
61 Shenglong Zhu, Fuhui Wang. Abnormal Steady State in Reactive Sputtering. J.Vac. Sci. Technol. 1999, A 17(1):70～76
62 Siegfried Hofmann. Target and Substrate Surface Reaction Kinetics in Magnetron Sputtering of Nitride Coatings. Thin Solid Films, 1990, 191:335～348
63 C.D.Tsiogas, J.N.Avaritsiotis. A Model for Reactive Magnetron Sputtering.Vacuum, 1992, 43(3): 203～211
64 侯晓波，查良镇，范垂祯等．反应溅射制备SiO_2膜的问题及进展．真空．1999，12(6)：1～5
65 茅昕辉，刘云峰，张浩康等．铝靶脉冲反应溅射沉积氧化铝薄膜中的迟滞回线的研究．真空科学与技术．2000，20(2)：88～91
66 Hiroshi Okano, Yusuke Tashiharu, et al. Preparation of c-Axis Oriented AlN Films by Low-Temperature Reactive Sputtering. Jpn. J.Appl. Phys. 1992,31:3346～3451
67 M.Penza, M.F. De Riccardis, et al. Low Temperature Growth of r.f. Reactively Planar Magnetron-sputtered AlN Films. Thin Solid Films. 1995,259:154～162
68 Wagner C.D., Riggs W.M., et al. Handbook of X-ray Photoelectron Spectroscopy,Perkin-Elmer Corporation Electronics Division, Printed in USA, 1979:12
69 刘新华．原子结构参数与电负性的相关性研究．德州学院学报．2002，18(2)：38～41
70 夏立芳，王作诚，孙跃等．AlN薄膜的成分、相结构和氧化性能．材料研究学报．1995，9(4)：361～363
2 张贵峰．新型红外增透膜与保护膜．红外技术．1995，17(5)：23～28
3 余怀之，郑岳华，刘建平等．红外透射材料ZnS．激光与红外．1997，27(6)：366～370
4 李敬起，郭晚土，孙亦宁．金刚石红外增透保护膜．真空与低温，1996，9(3)：131～133
5 Daniel C. Harris. Properties of Diamond for Window and Dome Applications.Proc. SPIE 1994,2286:218～228
6 RS Sussmann, JR Brandon, et al. High Quality CVD Diamond: A Material for Optical and Particle Detector Applications. Diamond Relat Mater, in press
7 C.E.Johnson, M.A.S.Hasting, et al. Thermogravimetric Analysis of the Oxidation of CVD Diamond Films. J. Mater. Res. 1990,2320:11
8 CJH Wort, CG Sweeney, et al. Thermal Properties of Bulk Polycrystalline CVD Diamond. Diamond Relat Mater. 1994,1158:3
9 Daniel C. Harris. Materials for Infrared Windows and Domes. SPIE Optical Engineering Press, 1999:321～335
10 K.A.Klemm, H.S.Patterson, et al. Protective Optical Coatings for Diamond Infrared Windows. Proc. SPIE 1994,2286:347～353
11 汪洪海，郑启光，魏学勤等．反应式脉冲激光溅射淀积AlN薄膜化学稳定性研究．激光杂志．1998，19(6)：28～31
12 S.P. McGeoch, F. Placido, et al. Coatings for the Protection of Diamond in High-temperature Environments. Diamond Relat Mater, 1999,8:916～919
13 潘俊德，田林海，莘海维等．电子浴辅助阴极电弧源活性反应离子镀合成ALN薄膜．热加工工艺，2000，(4)：22～24
14 田民波，刘德令．薄膜科学与技术手册(上册)．机械工业出版社，1991
15 黄继颇，王连卫，高剑侠等．脉冲准分子激光沉积AlN薄膜的研究．中国激光．1999，26(9)：815～818
16 B.D.Chrisey, G.K.Bubler. Pulsed Laser Deposition of Thin Films. New York:John Wiley and Sons Inc, 1994:160～166
17 汪洪海，郑启光，魏学勤等．等离子体辅助反应式脉冲激光熔蚀制备ALN薄膜的低温生长．功能材料．1999，30(2)：204～206
18 汪洪海，郑启光，丘军林等．激光熔蚀反应沉淀ALN薄膜残余应力及热稳定性的研究．中国激光．2000，27(9)：857～860
19 朱景芝．碳化锗红外增透保护膜的制备工艺与性能研究．西北工业大学硕士学位论文，1997
20 张伟，张仕国，袁骏．Si衬底上用反应蒸发法制备ALN单晶薄膜．半导体学报．1997，18(8)：568～572
21 Jae Hyoung Choi, Jeong Yong Lee, et al. Phase Evolution in Aluminum Nitride Thin Films on Si(100) Prepared by Radio Frequency Magnetron Sputtering.Thin Solid Films,2001,384:166～172
22 潘俊德，田林海，莘海维等．电子浴辅助阴极电弧源法合成AlN薄膜机理初探．热加工工艺．2001，(1)：5～6
23 Bing-Hwai Hwang, Chi-Shan Chen, et al. Growth Mechanism of Reactively Sputtered Aluminum Nitride Thin Films. Materials Science and Engineering.2002, A325:380～388
24 Hwan-Chu Lee, Ki-Young Lee, et al. Effect of Hydrogen Addition on the Preferred Orientation of AlN Films Prepared by Reactive Sputtering. Thin Solid Films. 1995, 271:50～55
25 Ig-Hyeon and Seon-Hyo Kim. Effect of N_2~+ Ion Bombardment on the Compositional Change and Residual Stress of AlN Film Synthesized by Ion Beam Assisted Deposition. J.Vac. Technol. 1995, A13(6):2814～2818
26 M.Akiyma, C.Xu, K.Nonaka. Influence of Sputtering Atmosphere on Crystallinity and Crystal Orientation of AlN Thin Films Deposited on Polycrystalline MoSi_2 Substrates. J. Mate. Sci. 1998,33:2463～2467
27 武海顺，许小红，张富强等．氮化铝压电薄膜的晶面择优取向．真空科学与技术．2000，20(6)：442～446
28 Chu C, Ong P P, Che H.F. TOF Study of Ppulsed Laser Ablation of Aluminum Nitride for Thin Film Growth. Appl. Surf. Sci.1999,137:91～97
29 缪向水，胡用时，林更琪等．AlN和AlSiN薄膜的制备工艺及其光学特性．华中理工大学学报．1995，26(Sup．1)：185～188
30 V. Dumitru, C.Morosanu, et al. Optical and Sstructural Differences between RF and DC Al_xN_y Magnetron Sputtered Films. Thin Solid Films. 2000, 359:17～20
31 S.P. McGeoch, EM.Waddell, et al. Aluminum Nitride Coatings for Protection of Diamond at High Temperature in Air. Proc. SPIE1999,3705:163～169
32 K.A.Klemm, L.F. Johnson, et al. Modification of Properties of Ion-beam Sputtered Thin Films by Low-energy Ion Bombardment. Mat. Res. Soc. Symp. Proc.1991,223:295
33 Holmquist GA. US Patent 199507-62-0928
34 Johnson, Linda F, et al. US Patent N96-29924
35 K.J.Grannen, D.V. Tsu, et al. Oxidation Studies of Fluorine Containing Diamond Films. Appl.Phys. Lett. 1991,59(6):745～747
36 K.Miyata, K.Kobashi. Air Oxidation of Undoped and B-Doped Polycrystalline Diamond Films at High Temperature. J.Mater. Res. 11:296～304
37 R.E.Sah, C.J.Kelly, et al. Amorphous Hydrogenated Carbon-germanium Films for Hard Multilayers IR Optical Coatings. Proc. SPIE 1990,1275:59
38 林永昌，卢维强．光学薄膜原理．国防工业出版社，1990
39 尹树百．薄膜光学—理论与实践．科学出版社，1987
40 唐晋发，顾培夫．薄膜光学与技术．机械工业出版社，1989
41 宋健全．ZnS头罩增透保护膜系的设计、制备及计算机模拟．西北工业大学博士论文．2001
42 周健，林永昌．一种新的膜系设计方法—Neddle法．光学学报．1997，17(10)：1445～1449
43 林永昌，顾永琳，张诚等．针法与初始膜系设计．光学学报．1997，(10)：27～31
44 Paul Klocek, Thomas McKenna, John Trombetta. Thermo-optic, thermo-mecha-nical, and electromagnetic effects in IR windows and domes, and the rationale for GaAs,GaP, and diamond. Proc. SPIE 1994,2286:71～90
45 范志刚，张伟，李以贵等．多层介质光学膜系的误差分析—膜层厚度变化的灵敏度因子．激光技术，1996，20(4)：236～240
46 P.J.Kelly, R.D.Arnell. Magnetron Sputtering: A Review of Developments and
Application. Vaccum.2000,(56): 159～172
47 王力衡，黄运添，郑海涛．薄膜技术．清华大学出版社．1991
48 严一心，林鸿海．薄膜技术．国防工业出版社，1994
49 陈国平．薄膜科学与技术．东南大学出版社，1993
50 J.L.Vossoen, W. Kerfned. Thin Film Processing. Academic Press. 1978
51 李学丹，万学英，姜祥祺等．真空沉积技术．浙江大学出版社．1994
52 叶宪曾，江子伟，李赛君等．仪器分析教程．北京大学出版社．1997
53 张随新，陈国平．磁控反应溅射氧化锡膜的工艺研究．真空科学与技术．1995，15(6)：415～419
54 Alexey A Fomin, Vladislav Akhmator, et al. Magnetron Sputtering System Stabilisation for High Rate Deposition of AlN Films. Vacuum. 1998, 49(3):247～251
55 C.R.Aita, C.J.Gawlak. The Dependence of Aluminum Nitride Film Crystallography on Sputtering Plasma Composition. J.Vac. Sci. Technol. 1983,Al(2):403～406
56 F. Shinoki and A.Itoh. Mechanism of RF Reactive Sputtering. J.Appl. Phys. 1975,46(8):3381～3384
57 J．L．沃森，W．克恩等．薄膜加工工艺．机械工业出版社．1987
58 K. Sugiyama, K.Taniguchi, et al. Preparation of Orientated Aluminium Nitride Films by Radio-frequency Reactive Sputtering. J.Mate. Sci.Lett. 1990,9:489～492
59 于忠奇．硫化锌头罩镀膜均匀性的理论分析与实验研究．西北工业大学硕士学位论文．2002
60 L.B.Jonsson, T.Nyberg, S.Berg. Target Compound Layer Formation during Reactive Sputtering. J. Vac. Sci. Technol. 1999, A17(4): 1827～1831
61 Shenglong Zhu, Fuhui Wang. Abnormal Steady State in Reactive Sputtering. J.Vac. Sci. Technol. 1999, A 17(1):70～76
62 Siegfried Hofmann. Target and Substrate Surface Reaction Kinetics in Magnetron Sputtering of Nitride Coatings. Thin Solid Films, 1990, 191:335～348
63 C.D.Tsiogas, J.N.Avaritsiotis. A Model for Reactive Magnetron Sputtering.Vacuum, 1992, 43(3): 203～211
64 侯晓波，查良镇，范垂祯等．反应溅射制备SiO_2膜的问题及进展．真空．1999，12(6)：1～5
65 茅昕辉，刘云峰，张浩康等．铝靶脉冲反应溅射沉积氧化铝薄膜中的迟滞回线的研究．真空科学与技术．2000，20(2)：88～91
66 Hiroshi Okano, Yusuke Tashiharu, et al. Preparation of c-Axis Oriented AlN Films by Low-Temperature Reactive Sputtering. Jpn. J.Appl. Phys. 1992,31:3346～3451
67 M.Penza, M.F. De Riccardis, et al. Low Temperature Growth of r.f. Reactively Planar Magnetron-sputtered AlN Films. Thin Solid Films. 1995,259:154～162
68 Wagner C.D., Riggs W.M., et al. Handbook of X-ray Photoelectron Spectroscopy,Perkin-Elmer Corporation Electronics Division, Printed in USA, 1979:12
69 刘新华．原子结构参数与电负性的相关性研究．德州学院学报．2002，18(2)：38～41
70 夏立芳，王作诚，孙跃等．AlN薄膜的成分、相结构和氧化性能．材料研究学报．1995，9(4)：361～363
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