CMOS低噪声放大器和有源电感的优化设计
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摘要
低噪声放大器(LNA)是无线接收机前端的关键电路之一。由于是整个电路系统的第一级,其增益、噪声、线性度等直接影响整个电路系统的性能。本文运用仿真工具ADS,通过对CMOS共源共栅低噪声放大器的共源极栅宽,源极电感以及栅极电感值的扫描仿真,以smith阻抗圆图的形式给出了一个直观的LNA设计优化流程,该方法近似实现了最佳噪声源阻抗和输入阻抗的同时匹配。
由于UWB(Ultra-Wide-Band)传输速率高,发射信号功率小,功率谱密度低,收发机易于数字化,适合于高速无线通信,因此得到了广泛关注。本文基于0.18um CMOS工艺,设计了一个应用于UWB接收机中的低噪声放大器,在整个工作频率范围内(3.1GHz～10.6GHz),S11<-9.6dB,S21> 17.245dB,而噪声系数小于4.782dB。
根据源跟随器被大电阻驱动,则该源跟随器的输出阻抗基本上表现出一个电感的行为这一理论,本文在共源-共漏有源电感的基础上提出了一种新的改善品质因数的方法,仿真结果表明改进后的有源电感品质因数高达334。
Low noise amplifier(LNA) is a key component in the front-end of RF transceiver. As the first stage of the system, its gain, noise figure(NF) and linearity directly take effect on the whole circuit. An optimization design procedure of CMOS cascode LNA is presented by smith chart through the parameter sweep of the width of common source stage, source inductor and gate inductor in ADS. Simulation results indicate that with the proposed approach, simultaneous noise and input matching is achieved.
Ultra-wide-band(UWB) systems are emerging wireless technology capable of transmitting data over a wide frequency band with low power and higher data rate. A UWB LNA bases on 0.18um CMOS technology is presented, from 3.1GHz to 10.6GHz, S11<-9.6dB, S21>17.245dB, and NF<4.782dB.
Base on the theory that the output of source follower amplifier acts like an inductor if the input is driven by a large resistor, a novel active inductor with improved quality factor(Q) is proposed, and the maximum Q can be 334.
由于UWB(Ultra-Wide-Band)传输速率高,发射信号功率小,功率谱密度低,收发机易于数字化,适合于高速无线通信,因此得到了广泛关注。本文基于0.18um CMOS工艺,设计了一个应用于UWB接收机中的低噪声放大器,在整个工作频率范围内(3.1GHz～10.6GHz),S11<-9.6dB,S21> 17.245dB,而噪声系数小于4.782dB。
根据源跟随器被大电阻驱动,则该源跟随器的输出阻抗基本上表现出一个电感的行为这一理论,本文在共源-共漏有源电感的基础上提出了一种新的改善品质因数的方法,仿真结果表明改进后的有源电感品质因数高达334。
Low noise amplifier(LNA) is a key component in the front-end of RF transceiver. As the first stage of the system, its gain, noise figure(NF) and linearity directly take effect on the whole circuit. An optimization design procedure of CMOS cascode LNA is presented by smith chart through the parameter sweep of the width of common source stage, source inductor and gate inductor in ADS. Simulation results indicate that with the proposed approach, simultaneous noise and input matching is achieved.
Ultra-wide-band(UWB) systems are emerging wireless technology capable of transmitting data over a wide frequency band with low power and higher data rate. A UWB LNA bases on 0.18um CMOS technology is presented, from 3.1GHz to 10.6GHz, S11<-9.6dB, S21>17.245dB, and NF<4.782dB.
Base on the theory that the output of source follower amplifier acts like an inductor if the input is driven by a large resistor, a novel active inductor with improved quality factor(Q) is proposed, and the maximum Q can be 334.
引文
[1] Ultra-Wide-Band(UWB) First Report and Order Transl., Federal Communications (FCC), Feb. 2002 [Online].
[2] Yang Lu, Kiat Seng Yeo, Alper Cabuk, Jianguo Ma, Manh Anh Do, Zhenghao Lu, “A novel CMOS low noise amplifier for 3.1-10.6GHz ultra-wide-band wireless receivers”, IEEE transaction on circuits and systems-I:regular papers, vol.53, no.8, Aug. 2006.
[3] Ke-Hou Chen, Jian-Hao Lu, Bo-Jiun Chen,and Shen-Iuan Liu, “An ultra-wide-band 0.4-10GHz LNA in 0.18um CMOS”, IEEE transaction on circuits and systems-II:express briefs,vol.54, no.3,Mar. 2007.
[4] C.F.Liao and S.I.Liu, “A broad noise-canceling CMOS LNA for 3.1-10.6GHz UWB receiver”,in Proc. IEEE 2005 custom integr.circuits coNF. , Sep. 2005.
[5] Xiaohua Fan, Edgar Sanchez-Sinencio, and Jose Silva-Mrtinez, “3GHz-10GHz common gate ultra wideband low noise amplifier”,Circuits and Systems, 2005. 48th Midwest Symposium.
[6] Yasser Soliman, Leonard MacEachern and Langis Roy, “A CMOS ultra-wideband LNA utilizing a frequency –controlled feedback technigue ”, Ultra-Wideband, 2005. ICU 2005. 2005 IEEE International Conference.
[7] 桑泽华,李永明,“一种应用于超宽带系统的宽带L NA 的设计”,微电子学,第36卷,第1期,2006年2月。
[8] Thmoas H.Lee 著,余志平、周润德等译,《CMOS 射频集成电路设计》,电子工业出版社,2004.7。
[9] Derek K. Shaeffer, Thomas H. Lee, “Corrections to ‘A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier’ ”, IEEE Journal of Solid-State Circuits, vol. 40, no.6, June 2005.
[10] 《东南射频讲义》。
[11] Derek K. Shaeffer, Thomas H. Lee., “A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier”, IEEE Journal of Solid-State Circuits, vol. 32, no.5, May 1997.
[12] Chao-Shiun Wang, Chorng-Kuang Wang, “A 90nm CMOS Low Noise Amplifier Using Noise Neutralizing for 3.1-10.6GHz UWB System”, Solid-State Circuits Conference, 2006. ESSCIRC 2006.
[13] Teemu Peltonen, Meigen Shen, Tero Koivisto, Xinzhong Duo, Esa Tjukanoff, Li-Rong Zheng and Hannu Tenhunen, “A 0.18 um CMOS Ultra-Wideband Low-Noise Amplifier with High IIP3”, High Density Microsystem Design and Packaging and Component Failure Analysis, 2005 Conference.
[14] Chang-Wan Kim, Min-Suk Kang, Phan Tuan Anh, Hoon-Tae Kim, and Sang-Gug Lee, “An Ultra-Wideband CMOS Low Noise Amplifier for 3–5-GHz UWB System”, IEEE Journal of Solid-State Circuits, vol. 40, no. 2, Feb.2005.
[15] Hung-Wei Chiu, Shey-Shi Lu, and Yo-Sheng Lin, “A 2.17-dB NF 5-GHz-Band Monolithic CMOS LNA With 10-mW DC Power Consumption”,IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 3, Mar. 2005.
[16] Cheon Soo Kim, Min Park, Chung-Hwan Kim, Yeong Cheol Hyeon, Hyun Kyu Yu, Kwyro Lee, and Kee Soo Nam, “A Fully Integrated 1.9-GHz CMOS Low-Noise Amplifier”,IEEE Microwave and Guided Wave Letters, vol. 8, no. 8, Aug. 1998.
[17] 张振勇, 胡伟, 赵勇, 杨莲兴,“一个 950MHz CMOS 低噪声放大器的设计”,半导体技术第 27 卷第 5 期,2002 年 5 月。
[18] 肖珺 ,李永明,王志华,“低功耗 CMOS 低噪声放大器的设计”,微电子学第 36 卷第 5 期,2006 年 10 月。
[19] Trung-Kien Nguyen, Chung-Hwan Kim, Gook-Ju Ihm, Moon-Su Yang, and Sang-Gug Lee, “CMOS Low-Noise Amplifier Design Optimization Techniques”, IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 5, May 2004.
[20] Xiang Guan and Ali Hajimiri, “A 24GHz CMOS Front-end”,ESSCIRC 2002。
[21] Hung-Wei Chiu et al., “A 2.17-dB NF 5-GHz-Band Monolithic CMOS LNA With 10-mW DC Power Consumption”, IEEE Trans Microwave Theo and Tec,2005, 53(3):813-824.
[22] Trung-Kien Nguyen et al, “CMOS Low-Noise Amplifier Design OptimizationTechniques”, IEEE Trans Microwave Theo and Tec 2004,52(5):1433-1442.
[23] Andrea Bevilacqua , and Ali M. Niknejad , “An Ultrawideband CMOS Low-Noise Amplifier for 3.1-10.6GHz Wireless Receivers”, IEEE Journal of Solid-State Circuits, vol. 39, no. 12, Dec. 2004.
[24] Bo-Yang Chang, Christina F. Jou, “Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers” ,APMC2005 Proceedings.
[25] Andrea Bevilacqua1, Ali M Niknejad, “An Ultra-Wideband CMOS LNA for 3.1 to 10.6GHz Wireless Receivers”,ISSCC 2004.
[26] K. H. Chen and C. K. Wang, “A 3.1 10.6 GHz CMOS cascaded two stage distributed amplifier for ultra-wideband application”, in Proc.IEEE Asia-Pacific CoNF. Advanced System Integrated Circuits, 2004,pp. 296–299.
[27] B. Razavi et al, “A 0.13-um CMOS UWB Transceiver”,ISSCC Dig. Tech. Papers, pp. 216-217, Feb. 2005.
[28] A.Thannachayanont, “Low-voltage low-power high-Q CMOS RF bandpass filter”,Electronics Letters,vol.38, Jun 2002.
[29] A.Thannachayanont and S.Sae Ngow, “Low voltage high-Q VHF CMOS transistor-only active inductor”, Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium .
[30] Ismail M.,Wassenaar.,and Morrison W., “A high-speed continuous-time bandpass VHF filter in MOS technology”,Proc.IEEE ISCAS’91, vol.3,1991.
[31] Wu Y., Ismail M., and Olsson H., “A novel CMOS fully differential inductorless RF bandpass filter”,Proc.IEEE ISCAS’2000,vol.4,2000.
[32] Liang-Hung Lu, Hsieh-Hung Hsieh, and Yu-Te Liao, “A Wide Tuning-Range CMOS VCO With a Differential Tunable Active Inductor”, IEEE Transactions on Microwave Theory and Techniques, vol 54, no. 9, Sep. 2006.
[33] Razavi B.著,陈贵灿等译,《模拟 CMOS 集成电路设计》,西安交通大学出版社,2002.12。
[2] Yang Lu, Kiat Seng Yeo, Alper Cabuk, Jianguo Ma, Manh Anh Do, Zhenghao Lu, “A novel CMOS low noise amplifier for 3.1-10.6GHz ultra-wide-band wireless receivers”, IEEE transaction on circuits and systems-I:regular papers, vol.53, no.8, Aug. 2006.
[3] Ke-Hou Chen, Jian-Hao Lu, Bo-Jiun Chen,and Shen-Iuan Liu, “An ultra-wide-band 0.4-10GHz LNA in 0.18um CMOS”, IEEE transaction on circuits and systems-II:express briefs,vol.54, no.3,Mar. 2007.
[4] C.F.Liao and S.I.Liu, “A broad noise-canceling CMOS LNA for 3.1-10.6GHz UWB receiver”,in Proc. IEEE 2005 custom integr.circuits coNF. , Sep. 2005.
[5] Xiaohua Fan, Edgar Sanchez-Sinencio, and Jose Silva-Mrtinez, “3GHz-10GHz common gate ultra wideband low noise amplifier”,Circuits and Systems, 2005. 48th Midwest Symposium.
[6] Yasser Soliman, Leonard MacEachern and Langis Roy, “A CMOS ultra-wideband LNA utilizing a frequency –controlled feedback technigue ”, Ultra-Wideband, 2005. ICU 2005. 2005 IEEE International Conference.
[7] 桑泽华,李永明,“一种应用于超宽带系统的宽带L NA 的设计”,微电子学,第36卷,第1期,2006年2月。
[8] Thmoas H.Lee 著,余志平、周润德等译,《CMOS 射频集成电路设计》,电子工业出版社,2004.7。
[9] Derek K. Shaeffer, Thomas H. Lee, “Corrections to ‘A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier’ ”, IEEE Journal of Solid-State Circuits, vol. 40, no.6, June 2005.
[10] 《东南射频讲义》。
[11] Derek K. Shaeffer, Thomas H. Lee., “A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier”, IEEE Journal of Solid-State Circuits, vol. 32, no.5, May 1997.
[12] Chao-Shiun Wang, Chorng-Kuang Wang, “A 90nm CMOS Low Noise Amplifier Using Noise Neutralizing for 3.1-10.6GHz UWB System”, Solid-State Circuits Conference, 2006. ESSCIRC 2006.
[13] Teemu Peltonen, Meigen Shen, Tero Koivisto, Xinzhong Duo, Esa Tjukanoff, Li-Rong Zheng and Hannu Tenhunen, “A 0.18 um CMOS Ultra-Wideband Low-Noise Amplifier with High IIP3”, High Density Microsystem Design and Packaging and Component Failure Analysis, 2005 Conference.
[14] Chang-Wan Kim, Min-Suk Kang, Phan Tuan Anh, Hoon-Tae Kim, and Sang-Gug Lee, “An Ultra-Wideband CMOS Low Noise Amplifier for 3–5-GHz UWB System”, IEEE Journal of Solid-State Circuits, vol. 40, no. 2, Feb.2005.
[15] Hung-Wei Chiu, Shey-Shi Lu, and Yo-Sheng Lin, “A 2.17-dB NF 5-GHz-Band Monolithic CMOS LNA With 10-mW DC Power Consumption”,IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 3, Mar. 2005.
[16] Cheon Soo Kim, Min Park, Chung-Hwan Kim, Yeong Cheol Hyeon, Hyun Kyu Yu, Kwyro Lee, and Kee Soo Nam, “A Fully Integrated 1.9-GHz CMOS Low-Noise Amplifier”,IEEE Microwave and Guided Wave Letters, vol. 8, no. 8, Aug. 1998.
[17] 张振勇, 胡伟, 赵勇, 杨莲兴,“一个 950MHz CMOS 低噪声放大器的设计”,半导体技术第 27 卷第 5 期,2002 年 5 月。
[18] 肖珺 ,李永明,王志华,“低功耗 CMOS 低噪声放大器的设计”,微电子学第 36 卷第 5 期,2006 年 10 月。
[19] Trung-Kien Nguyen, Chung-Hwan Kim, Gook-Ju Ihm, Moon-Su Yang, and Sang-Gug Lee, “CMOS Low-Noise Amplifier Design Optimization Techniques”, IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 5, May 2004.
[20] Xiang Guan and Ali Hajimiri, “A 24GHz CMOS Front-end”,ESSCIRC 2002。
[21] Hung-Wei Chiu et al., “A 2.17-dB NF 5-GHz-Band Monolithic CMOS LNA With 10-mW DC Power Consumption”, IEEE Trans Microwave Theo and Tec,2005, 53(3):813-824.
[22] Trung-Kien Nguyen et al, “CMOS Low-Noise Amplifier Design OptimizationTechniques”, IEEE Trans Microwave Theo and Tec 2004,52(5):1433-1442.
[23] Andrea Bevilacqua , and Ali M. Niknejad , “An Ultrawideband CMOS Low-Noise Amplifier for 3.1-10.6GHz Wireless Receivers”, IEEE Journal of Solid-State Circuits, vol. 39, no. 12, Dec. 2004.
[24] Bo-Yang Chang, Christina F. Jou, “Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers” ,APMC2005 Proceedings.
[25] Andrea Bevilacqua1, Ali M Niknejad, “An Ultra-Wideband CMOS LNA for 3.1 to 10.6GHz Wireless Receivers”,ISSCC 2004.
[26] K. H. Chen and C. K. Wang, “A 3.1 10.6 GHz CMOS cascaded two stage distributed amplifier for ultra-wideband application”, in Proc.IEEE Asia-Pacific CoNF. Advanced System Integrated Circuits, 2004,pp. 296–299.
[27] B. Razavi et al, “A 0.13-um CMOS UWB Transceiver”,ISSCC Dig. Tech. Papers, pp. 216-217, Feb. 2005.
[28] A.Thannachayanont, “Low-voltage low-power high-Q CMOS RF bandpass filter”,Electronics Letters,vol.38, Jun 2002.
[29] A.Thannachayanont and S.Sae Ngow, “Low voltage high-Q VHF CMOS transistor-only active inductor”, Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium .
[30] Ismail M.,Wassenaar.,and Morrison W., “A high-speed continuous-time bandpass VHF filter in MOS technology”,Proc.IEEE ISCAS’91, vol.3,1991.
[31] Wu Y., Ismail M., and Olsson H., “A novel CMOS fully differential inductorless RF bandpass filter”,Proc.IEEE ISCAS’2000,vol.4,2000.
[32] Liang-Hung Lu, Hsieh-Hung Hsieh, and Yu-Te Liao, “A Wide Tuning-Range CMOS VCO With a Differential Tunable Active Inductor”, IEEE Transactions on Microwave Theory and Techniques, vol 54, no. 9, Sep. 2006.
[33] Razavi B.著,陈贵灿等译,《模拟 CMOS 集成电路设计》,西安交通大学出版社,2002.12。
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