CMOS射频接收前端的设计与研究
摘要
近几年来,随着亚微米、深亚微米CMOS工艺的不断成熟,以及无线通信技术的蓬勃发展,低成本、低功耗、高集成度的CMOS射频集成电路的设计与研究引起了人们的很大关注。低噪声放大器和混频器是射频接收机的核心模块,几乎在任何一种无线通信标准的射频接收前端电路中都离不开这两个重要模块。因此,如何利用深亚微米CMOS工艺技术设计射频接收前端的低噪声放大器及混频器是摆在面前的重要任务。
本文首先简要介绍了射频电子技术发展史以及各种架构的CMOS射频接收机的优缺点,着重分析了无源元件的射频特性与MOSFET的物理基础,接着对射频电路中相关的噪声理论与非线性失真进行了较系统的讨论,在此基础上对CMOS射频接收前端中的低噪声放大器与混频器进行了详细的分析和设计,得到了这两个射频电路有效的拓扑结构,其中低噪声放大器采用了一种新型的带有负反馈网络的共源共栅结构,而混频器则采用目前比较流行的双平衡的吉尔伯特结构。
本接收机将应用于蓝牙通信中,所以设计的低噪声放大器工作在2.4GHz重要频段,而且混频电路采用Gilbert下混频器。使用Agilent公司的ADS软件对所设计的电路进行了仿真和验证,仿真中采用了CMOS TSMC_0.18μm工艺的器件模型,仿真结果表明,所设计的低噪声放大器及Gilbert混频器均达到射频接收电路的技术指标,可以有效地应用于射频接收前端的设计之中。
本文的主要成果表现在两方面。其一,结合深亚微米的CMOS技术,在原有共源共栅结构的基础上对低噪声放大器作进一步改善,得到了性能良好的CMOS低噪声放大器电路。其二,设计了同样采用深亚微米的CMOS技术工艺并且与低噪声放大器衔接良好的双平衡Gilbert混频器。以上工作十分有利于CMOS射频电路单片集成的需要,从而具有重要的实际意义。
With achievement of more mature CMOS processing technology under submicron and deep submicron level and the rapid advance of wireless communication technology over past decades, the RF CMOS circuits with low cost, low power dissipation and high integration have drawn much attention. Since the low noise amplifier (LNA) and the mixer are core building blocks of radio frequency front-end devices and employed in almost every standard wireless communication system, it is very meaningful and urgent that the low noise amplifier (LNA) and the mixer can be realized in deep submicron processing technology.
In this thesis, an introduction to development of radio frequency communication is presented briefly at first. The second part gives the analysis of radio frequency characteristics of devices and basic physics of MOSEFT. Then the noise theory and nonlinear distortion is explained in details. In the fourth part, with the summery of LNA research in several basic structures, an amplifier based on cascode feedback topology is proposed. The analysis of different mixers is made in the following part and a novel Gilbert mixer is designed. At last, a brief conclusion is presented.
The designed LNA and mixer are simulated by ADS software tool of Agilent Corp using TSMC 0.18 um CMOS process models. The results show that the proposed LNA and Mixer have quite good quality and all parameters falls in the reasonable good range.
In conclusion, two goals have been achieved as following. First, a new type amplifier based on cascode feedback topology is proposed, and the simulated results show that it could meet the requirement of low noise and high performance . Second, the mixer could be cooperate with LNA well and meet requirement of front-end devices. Above work show that the designed LNA and Mixer are very fit to realizing monolithic RFIC system integration.
本文首先简要介绍了射频电子技术发展史以及各种架构的CMOS射频接收机的优缺点,着重分析了无源元件的射频特性与MOSFET的物理基础,接着对射频电路中相关的噪声理论与非线性失真进行了较系统的讨论,在此基础上对CMOS射频接收前端中的低噪声放大器与混频器进行了详细的分析和设计,得到了这两个射频电路有效的拓扑结构,其中低噪声放大器采用了一种新型的带有负反馈网络的共源共栅结构,而混频器则采用目前比较流行的双平衡的吉尔伯特结构。
本接收机将应用于蓝牙通信中,所以设计的低噪声放大器工作在2.4GHz重要频段,而且混频电路采用Gilbert下混频器。使用Agilent公司的ADS软件对所设计的电路进行了仿真和验证,仿真中采用了CMOS TSMC_0.18μm工艺的器件模型,仿真结果表明,所设计的低噪声放大器及Gilbert混频器均达到射频接收电路的技术指标,可以有效地应用于射频接收前端的设计之中。
本文的主要成果表现在两方面。其一,结合深亚微米的CMOS技术,在原有共源共栅结构的基础上对低噪声放大器作进一步改善,得到了性能良好的CMOS低噪声放大器电路。其二,设计了同样采用深亚微米的CMOS技术工艺并且与低噪声放大器衔接良好的双平衡Gilbert混频器。以上工作十分有利于CMOS射频电路单片集成的需要,从而具有重要的实际意义。
With achievement of more mature CMOS processing technology under submicron and deep submicron level and the rapid advance of wireless communication technology over past decades, the RF CMOS circuits with low cost, low power dissipation and high integration have drawn much attention. Since the low noise amplifier (LNA) and the mixer are core building blocks of radio frequency front-end devices and employed in almost every standard wireless communication system, it is very meaningful and urgent that the low noise amplifier (LNA) and the mixer can be realized in deep submicron processing technology.
In this thesis, an introduction to development of radio frequency communication is presented briefly at first. The second part gives the analysis of radio frequency characteristics of devices and basic physics of MOSEFT. Then the noise theory and nonlinear distortion is explained in details. In the fourth part, with the summery of LNA research in several basic structures, an amplifier based on cascode feedback topology is proposed. The analysis of different mixers is made in the following part and a novel Gilbert mixer is designed. At last, a brief conclusion is presented.
The designed LNA and mixer are simulated by ADS software tool of Agilent Corp using TSMC 0.18 um CMOS process models. The results show that the proposed LNA and Mixer have quite good quality and all parameters falls in the reasonable good range.
In conclusion, two goals have been achieved as following. First, a new type amplifier based on cascode feedback topology is proposed, and the simulated results show that it could meet the requirement of low noise and high performance . Second, the mixer could be cooperate with LNA well and meet requirement of front-end devices. Above work show that the designed LNA and Mixer are very fit to realizing monolithic RFIC system integration.
引文
[1]Thomas H.Lee著,余志平、周润德等译.CMOS射频集成电路设计[M].北京:电子工业出版社,2004.
[2]陈邦媛.射频通信电路[M].北京:科学出版社,2005.
[3]雷振亚.射频/微波电路导论[M].西安:西安电子科技大学出版社,2005.
[4]郝盛.2.4GHz接收射频前端设计[D].南京理工大学硕士学位论文.2006.
[5]王林.“微型核”低噪声放大器的设计与仿真[D].哈尔滨工业大学硕士学位论文.2006.
[6]Reinhold Ludwig,Pavel Bretchko著,王子宇、张肇仪等译.射频电路设计-理论与应用[M].北京:电子工业出版社,2002.
[7]毕查德·拉扎维著,陈贵灿、程军、张瑞智等译.模拟CMOS集成电路设计[M].西安:西安交通大学出版社,2004.
[8]C.G.Sodidi,P.K.Ko,and J.L.Moll.The Effect of High Fields on MOS Device and Circuit Performance.IEEE Tran.on Electron Devices,Oct.1984,vol.31:1386-1393.
[9]李霖.CMOS射频前端中低噪声放大器的设计[D].浙江大学硕士学位论文.2005.
[10]Bing J.Shev,et al.Measurement and Modeling of Short Channel MOS Transistor Gate Capacitances [J].IEEE Journal of Solid-State Circuits,June 1987,22(3):464-472.
[11]张杰.低功耗RF CMOS低噪声放大器的设计[D].安徽大学硕士学位论文,2005.
[12]高峻.无线通信射频接收前端研究与设计[D].西南交通大学硕士学位论文,2006.
[13]Chong-Ru Wu,Liang-Hung Lu.A 2.9-3.5-GHz tunable low-noise amplifier[J].Silicon Monolithic Integrated Circuits in RF Systems,2006:18-20.
[14]石峰.CMOS低噪声放大器的设计[D].电子科技大学硕士学位论文,2006.
[15]K.Shaeffer.A 1.5-V,1.5-GHz CMOS Low Noise Amplifier[J].IEEE Journal of Solid-State Circuits,2003.5,vol.38,NO.4:669-672.
[16]方磊,陈邦媛.级联型低噪声放大器设计和优化的研究[J].电路与系统学报,2003.8,vol.8.NO4:58-62.
[17]Hung-Che Wei,Ro-Min Weng,Kun-Yi Lin.A 1.5 V high-linearity CMOS mixer for 2.4 GHz applications[A].Circuits and Systems,2004.ISCAS '04.Proceedings of the 2004 International Symposium[C].2004,1:561-565.
[18]Sungkyung Park and Wonchan Kim.Design of a 1.8GHz low-noise amplifier for RF front-end in a 0.8pm CMOS technology[J].IEEE Transactions on Consumer Electronics,FEBRUARY 2001;47(1):10-15.
[19]M.Egels,J.Gaubert,P.Pannier and S.Bourdel.Design method for fully integrated CMOS RF LNA[J].ELECTRONICS LETTERS,2004;40(24):1513-1514.
[20]H.S.Kim,et al.A 2.4GHz CMOS low noise amplifier using an inter-stage matching inductor[J].Circuits and Systems,2000,42nd Midwest Symposium on;2:1040-1043.
[21]Jie Long and Robert J.Weber.A Low Voltage Low Noise CMOS RF Receiver Front-End[A].Proceedings of the 17th International Conference on VLSI Design[C].2004:393-397.
[22]林嘉锐.模拟高频电子电路[M].北京:科学技术文献出版社,1986.151-153.
[23]F.Ali,C.Hutchinson,and A.podell.A novel Cascode feedback GaAs MMIC LNA with transformer-coupled output using multiple fabrication process[J].IEEE Microwave and Guided Wave Lett.,Feb.1992,2:70-72.
[24]Jihak Jung1,Kyungho Chung1,Taeyeoul Yun1,Jaehoon Choi,Hoontae Kim.Ultra-Wideband Low Noise Amplifier Using a Cascode Feedback Topology[J].Microwave and Optical Technology Letters,Jan.2006:203-205.
[25]池保勇,余志平,石秉学.CMOS射频集成电路分析与设计[M].北京:清华大学出版社,2006.
[26]唐守龙,吴建辉.CMOS混频器设计现状与进展[J].微电子学,2005,35(6):605-611.
[27]池懿,王文骐,曾令海.2.4 GHz CMOS双平衡混频器的设计[J].上海大学学报(自然科学版),2005,11(5):451-454.
[28]Siddiqi.A.A.,Kwasniewski.T..2.4 GHz RF down-conversion mixers in standard CMOS technology [A].Circuits and Systems,2004.ISCAS '04.Proceedings of the 2004 International Symposium [C].2004,4:321-324.
[29]Lin.C.-S.,Wu.P.-S.,Chang,H.-Y.,Wang,n..A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13-/spl mu/m CMOS technology[J].Microwave and Wireless Components Letters,IEEE,2006,16(5):293-295.
[30]Verma.A.,Li Gao,O.K.K.,Lin.J..A K-band down-conversion mixer with 1.4-GHz bandwidth in 0.13-/spl mu/m CMOS technology[J].Microwave and Wireless Components Letters,IEEE,2005,15(8):493-495.
[31]Liao.C.-H.,Chu.Y.-K.,Huang.D.-R.,Chuang.H.-R..A 5.7-GHz low-power and high-gain 0.18-/spl mu/m CMOS double-balanced mixer for WLAN[A].Wireless Technology,2005[C].2005:265-267.
[32]Wang-Chi Cheng,Cheong-Fat Chan,Chiu-Sing Choy,Kong-Pang Pun.A 1.5V 900 MHz CMOS current folded-mirror mixer[A].ASIC,2003.Proceedings.5th International Conference[C].2003,2:1050-1053.
[33]Verma.A.,O.K.K.,Lin,J..A low-power up-conversion CMOS mixer for 22-29-GHz ultra-wideband applications[J].Microwave Theory and Techniques,IEEE Transactions,2006,54(8):3295-3300.
[34]Xuezhen Wang,Weber,R.,Degang Chen.A novel 1.5 V CMFB CMOS down-conversion mixer design for IEEE 802.11 A WLAN systems[A].Circuits and Systems,2004.ISCAS '04.Proceedings of the 2004 International Symposium[C].2004,4:373-379.
[2]陈邦媛.射频通信电路[M].北京:科学出版社,2005.
[3]雷振亚.射频/微波电路导论[M].西安:西安电子科技大学出版社,2005.
[4]郝盛.2.4GHz接收射频前端设计[D].南京理工大学硕士学位论文.2006.
[5]王林.“微型核”低噪声放大器的设计与仿真[D].哈尔滨工业大学硕士学位论文.2006.
[6]Reinhold Ludwig,Pavel Bretchko著,王子宇、张肇仪等译.射频电路设计-理论与应用[M].北京:电子工业出版社,2002.
[7]毕查德·拉扎维著,陈贵灿、程军、张瑞智等译.模拟CMOS集成电路设计[M].西安:西安交通大学出版社,2004.
[8]C.G.Sodidi,P.K.Ko,and J.L.Moll.The Effect of High Fields on MOS Device and Circuit Performance.IEEE Tran.on Electron Devices,Oct.1984,vol.31:1386-1393.
[9]李霖.CMOS射频前端中低噪声放大器的设计[D].浙江大学硕士学位论文.2005.
[10]Bing J.Shev,et al.Measurement and Modeling of Short Channel MOS Transistor Gate Capacitances [J].IEEE Journal of Solid-State Circuits,June 1987,22(3):464-472.
[11]张杰.低功耗RF CMOS低噪声放大器的设计[D].安徽大学硕士学位论文,2005.
[12]高峻.无线通信射频接收前端研究与设计[D].西南交通大学硕士学位论文,2006.
[13]Chong-Ru Wu,Liang-Hung Lu.A 2.9-3.5-GHz tunable low-noise amplifier[J].Silicon Monolithic Integrated Circuits in RF Systems,2006:18-20.
[14]石峰.CMOS低噪声放大器的设计[D].电子科技大学硕士学位论文,2006.
[15]K.Shaeffer.A 1.5-V,1.5-GHz CMOS Low Noise Amplifier[J].IEEE Journal of Solid-State Circuits,2003.5,vol.38,NO.4:669-672.
[16]方磊,陈邦媛.级联型低噪声放大器设计和优化的研究[J].电路与系统学报,2003.8,vol.8.NO4:58-62.
[17]Hung-Che Wei,Ro-Min Weng,Kun-Yi Lin.A 1.5 V high-linearity CMOS mixer for 2.4 GHz applications[A].Circuits and Systems,2004.ISCAS '04.Proceedings of the 2004 International Symposium[C].2004,1:561-565.
[18]Sungkyung Park and Wonchan Kim.Design of a 1.8GHz low-noise amplifier for RF front-end in a 0.8pm CMOS technology[J].IEEE Transactions on Consumer Electronics,FEBRUARY 2001;47(1):10-15.
[19]M.Egels,J.Gaubert,P.Pannier and S.Bourdel.Design method for fully integrated CMOS RF LNA[J].ELECTRONICS LETTERS,2004;40(24):1513-1514.
[20]H.S.Kim,et al.A 2.4GHz CMOS low noise amplifier using an inter-stage matching inductor[J].Circuits and Systems,2000,42nd Midwest Symposium on;2:1040-1043.
[21]Jie Long and Robert J.Weber.A Low Voltage Low Noise CMOS RF Receiver Front-End[A].Proceedings of the 17th International Conference on VLSI Design[C].2004:393-397.
[22]林嘉锐.模拟高频电子电路[M].北京:科学技术文献出版社,1986.151-153.
[23]F.Ali,C.Hutchinson,and A.podell.A novel Cascode feedback GaAs MMIC LNA with transformer-coupled output using multiple fabrication process[J].IEEE Microwave and Guided Wave Lett.,Feb.1992,2:70-72.
[24]Jihak Jung1,Kyungho Chung1,Taeyeoul Yun1,Jaehoon Choi,Hoontae Kim.Ultra-Wideband Low Noise Amplifier Using a Cascode Feedback Topology[J].Microwave and Optical Technology Letters,Jan.2006:203-205.
[25]池保勇,余志平,石秉学.CMOS射频集成电路分析与设计[M].北京:清华大学出版社,2006.
[26]唐守龙,吴建辉.CMOS混频器设计现状与进展[J].微电子学,2005,35(6):605-611.
[27]池懿,王文骐,曾令海.2.4 GHz CMOS双平衡混频器的设计[J].上海大学学报(自然科学版),2005,11(5):451-454.
[28]Siddiqi.A.A.,Kwasniewski.T..2.4 GHz RF down-conversion mixers in standard CMOS technology [A].Circuits and Systems,2004.ISCAS '04.Proceedings of the 2004 International Symposium [C].2004,4:321-324.
[29]Lin.C.-S.,Wu.P.-S.,Chang,H.-Y.,Wang,n..A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13-/spl mu/m CMOS technology[J].Microwave and Wireless Components Letters,IEEE,2006,16(5):293-295.
[30]Verma.A.,Li Gao,O.K.K.,Lin.J..A K-band down-conversion mixer with 1.4-GHz bandwidth in 0.13-/spl mu/m CMOS technology[J].Microwave and Wireless Components Letters,IEEE,2005,15(8):493-495.
[31]Liao.C.-H.,Chu.Y.-K.,Huang.D.-R.,Chuang.H.-R..A 5.7-GHz low-power and high-gain 0.18-/spl mu/m CMOS double-balanced mixer for WLAN[A].Wireless Technology,2005[C].2005:265-267.
[32]Wang-Chi Cheng,Cheong-Fat Chan,Chiu-Sing Choy,Kong-Pang Pun.A 1.5V 900 MHz CMOS current folded-mirror mixer[A].ASIC,2003.Proceedings.5th International Conference[C].2003,2:1050-1053.
[33]Verma.A.,O.K.K.,Lin,J..A low-power up-conversion CMOS mixer for 22-29-GHz ultra-wideband applications[J].Microwave Theory and Techniques,IEEE Transactions,2006,54(8):3295-3300.
[34]Xuezhen Wang,Weber,R.,Degang Chen.A novel 1.5 V CMFB CMOS down-conversion mixer design for IEEE 802.11 A WLAN systems[A].Circuits and Systems,2004.ISCAS '04.Proceedings of the 2004 International Symposium[C].2004,4:373-379.
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |