The effect of Zn incorporation on the optical band gap of CuGaS_2:Ti thin films

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• 英文论文题名：The effect of Zn incorporation on the optical band gap of CuGaS_2:Ti thin films
• 论文作者：Qingyan Li ; Yanlai Wang ; Ying Yang ; Chong Deng ; Xiangdong Cao
• 英文论文作者：Qingyan Li ; Yanlai Wang ; Ying Yang ; Chong Deng ; Xiangdong Cao ; Inner Mongolia University
• 年：2017
• 作者机构：Inner Mongolia University;
• 英文论文关键词：Intermediate Band ; CuGa1-x-yTixZnyS2 thin films ; optical band gap ; chalcopyrite
• 会议召开时间：2017-05-27
• 会议录名称：第四届新型太阳能电池学术研讨会论文集
• 英文会议录名称：Abstract Book of the 4th Conference on New Generation Solar Cells
• 语种：英文
• 分类号：TM914.4
• 学会代码：ZKYQ
• 会议名称：第四届新型太阳能电池学术研讨会
• 会议地点：中国北京
• 主办单位：中国可再生能源学会光化学专业委员会
• 学会名称：中国科学院物理研究所清洁能源实验室
• 页数：1
• 文件大小：725k
• 原文格式：D
• 会议级别：全国

摘要

A novel intermediate band(IB) material of Zn incorporation in Ti-doped CuGaS_2 thin films has been successfully fabricated via a facile non vacuum method including ball milling, spin-coating and annealing.Experimental results have shown that the IB position of Ti-doped CuGaS_2 thin films can be adjusted by Zn incorporation.For a given Ti%, raising Zn concentration leads to a significantly enhanced light absorption, which can be directly observed in the UV-Vis-NIR absorption spectrum.In this study, the optical band gap has a shortening of 0.19 eV when 0.6 % Zn is added to the 1.5 % Ti-doped CuGaS_2.Due to the Zn addition, the grains grow larger and squeeze together, which is observable from the surface morphology of the thin films using scanning electron microscope(SEM).The energy dispersive X-ray analysis(EDAX) spectrum demonstrates that ball milling can effectively make Ti and Zn elements co-coped evenly into CuGaS_2 thin films.Moreover, the improved optical property of the Ti-doped CuGaS_2 thin films due to the Zn incorporation also sheds lights in developing new material that could be a potential light absorption layers candidate of high efficiency solar cells.
A novel intermediate band(IB) material of Zn incorporation in Ti-doped CuGaS_2 thin films has been successfully fabricated via a facile non vacuum method including ball milling, spin-coating and annealing.Experimental results have shown that the IB position of Ti-doped CuGaS_2 thin films can be adjusted by Zn incorporation.For a given Ti%, raising Zn concentration leads to a significantly enhanced light absorption, which can be directly observed in the UV-Vis-NIR absorption spectrum.In this study, the optical band gap has a shortening of 0.19 eV when 0.6 % Zn is added to the 1.5 % Ti-doped CuGaS_2.Due to the Zn addition, the grains grow larger and squeeze together, which is observable from the surface morphology of the thin films using scanning electron microscope(SEM).The energy dispersive X-ray analysis(EDAX) spectrum demonstrates that ball milling can effectively make Ti and Zn elements co-coped evenly into CuGaS_2 thin films.Moreover, the improved optical property of the Ti-doped CuGaS_2 thin films due to the Zn incorporation also sheds lights in developing new material that could be a potential light absorption layers candidate of high efficiency solar cells.

引文

[1]Y.Seminóvski,P.Palacios,P.Wahnón.Intermediate band position modulated by Zn addition in Ti doped Cu Ga S2.Thin Solid Films 519(2011)7517–7521.
    [2]Y.Seminóvski,P.Palacios,J.C.Conesa,P.Wahnón.Thermodynamics of zinc insertion in Cu Ga S2:Ti,used as a modulator agent in an intermediate-band photovoltaic material.Computational and Theoretical Chemistry 975(2011)134–137.