Potential of nanocrystalline germanium for solar cells with long operating wavelengths

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• 英文论文题名：Potential of nanocrystalline germanium for solar cells with long operating wavelengths
• 论文作者：Chang Li ; Jian Ni ; Xiaoxiang Sun ; Xinyu Wang ; Zhenglong Li ; Hongkun Cai ; Juan Li ; Jianjun Zhang
• 英文论文作者：Chang Li ; Jian Ni ; Xiaoxiang Sun ; Xinyu Wang ; Zhenglong Li ; Hongkun Cai ; Juan Li ; Jianjun Zhang ; College of Electronic Information and Optical Engineering ; Nankai University
• 年：2017
• 作者机构：College of Electronic Information and Optical Engineering, Nankai University;
• 英文论文关键词：Thin film solar cell ; hydrogenated nanocrystalline germanium ; Negative photoconductivity ; Long wavelength
• 会议召开时间：2017-05-27
• 会议录名称：第四届新型太阳能电池学术研讨会论文集
• 英文会议录名称：Abstract Book of the 4th Conference on New Generation Solar Cells
• 语种：英文
• 分类号：TM914.4
• 学会代码：ZKYQ
• 会议名称：第四届新型太阳能电池学术研讨会
• 会议地点：中国北京
• 主办单位：中国可再生能源学会光化学专业委员会
• 学会名称：中国科学院物理研究所清洁能源实验室
• 页数：1
• 文件大小：721k
• 原文格式：D
• 会议级别：全国

摘要

To absorb the infrared part of the solar spectrum more efficiently, narrow bandgap hydrogenated nanocrystalline germanium(nc-Ge:H) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition at a low temperature of 180 ℃.While the incubation layer of the nc-Ge:H was reduced to less than 5 nm by using the ultra-high hydrogen dilution, the negative photoconductivity behavior was still observed as the thickness of nc-Ge:H up to 30 nm.Therefore, as the best candidate for solar cells application, the nc-Ge:H(20 nm)/nc-Si:H(10 nm) periodic multilayer structure was prepared and used as the absorption layer of nc-Ge:H nip solar cells.More importantly, the spectral sensitivities extending into the wavelength of 1450 nm was achieved in the nc-Ge:H nip solar cells.In addition, the annealing for the nc-Ge:H nip solar cells was carried out.While the overall short circuit current density of device is improved after 500 ℃ annealing, the spectral sensitivities in the infrared region is decreased due to the the coalescence of Ge crystallites.
To absorb the infrared part of the solar spectrum more efficiently, narrow bandgap hydrogenated nanocrystalline germanium(nc-Ge:H) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition at a low temperature of 180 ℃.While the incubation layer of the nc-Ge:H was reduced to less than 5 nm by using the ultra-high hydrogen dilution, the negative photoconductivity behavior was still observed as the thickness of nc-Ge:H up to 30 nm.Therefore, as the best candidate for solar cells application, the nc-Ge:H(20 nm)/nc-Si:H(10 nm) periodic multilayer structure was prepared and used as the absorption layer of nc-Ge:H nip solar cells.More importantly, the spectral sensitivities extending into the wavelength of 1450 nm was achieved in the nc-Ge:H nip solar cells.In addition, the annealing for the nc-Ge:H nip solar cells was carried out.While the overall short circuit current density of device is improved after 500 ℃ annealing, the spectral sensitivities in the infrared region is decreased due to the the coalescence of Ge crystallites.

引文

[1]Chang Li,Jian Ni,Xiaoxiang Sun,Xinyu Wang,Zhenglong Li,Hongkun Cai,Juan Li,Jianjun Zhang,J.Phys.D:Appl.Phys.,2017,50,045108.