电沉积制备碲化铋纳米线阵列及其表征
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摘要
先采用0.3 mol/L草酸溶液在0°C、8.9 mA/cm2下对纯铝板进行二次阳极氧化,制得氧化铝多孔膜(AAO),随后以AAO为模板,采用直流电沉积法制得Bi2Te3纳米线阵列。镀液组成和工艺条件为:Bi3+0.007 5 mol/L,2HTeO+0.001 25 mol/L,3NO-1 mol/L,温度0°C,pH 0.1,时间2 h。研究了沉积电位对沉积过程的电流变化以及纳米线的Te含量、形貌和结构的影响,得到最佳沉积电位为1.4 V。在1.4 V下沉积所得纳米线结构致密、连续,孔径约为90 nm,与AAO的孔径一致。
Porous anodic alumina oxide(AAO) film was obtained by two-step anodization of pure aluminum plate in 0.3 mol/L oxalic acid solution at 0 °C and 8.9 mA/dm2, and then used as a template to prepare Bi2Te3 nanowire array by direct current deposition. The plating bath composition and process conditions are as follows: Bi3+ 0.007 5 mol/L, 2HTeO+ 0.001 25 mol/L, 3NO- 1 mol/L, temperature 0 °C, pH 0.1, and time 2 h. The effects of deposition potential on the current variation during electrodeposition, as well as the Te content, morphology, and structure of nanowire were studied. The optimal deposition potential is determined as 1.4 V. The nanowire deposited at 1.4 V is compactly and continuously structured, with an aperture of ca.90 nm which is the same as that of AAO film.
Porous anodic alumina oxide(AAO) film was obtained by two-step anodization of pure aluminum plate in 0.3 mol/L oxalic acid solution at 0 °C and 8.9 mA/dm2, and then used as a template to prepare Bi2Te3 nanowire array by direct current deposition. The plating bath composition and process conditions are as follows: Bi3+ 0.007 5 mol/L, 2HTeO+ 0.001 25 mol/L, 3NO- 1 mol/L, temperature 0 °C, pH 0.1, and time 2 h. The effects of deposition potential on the current variation during electrodeposition, as well as the Te content, morphology, and structure of nanowire were studied. The optimal deposition potential is determined as 1.4 V. The nanowire deposited at 1.4 V is compactly and continuously structured, with an aperture of ca.90 nm which is the same as that of AAO film.
引文
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[3]VENKATASUBRAMANIAN R,SIIVOLA E,COLPITTS T,et al.Thin-film thermoelectric devices with high room-temperature figures of merit[J].Nature,2001,413(6856):597-602.
[4]MARKUSSEN T,JAUHO A-P,BRANDBYGE M.Surface-decorated silicon nanowires:a route to high-ZT thermoelectrics[J].Physical Review Letters,2009,103(5):055502.
[5]LI X L,CAI K F,LI H,et al.Alumina template-assisted electrodeposition of Bi2Te2.7Se0.3 nanowire arrays[J].Superlattices and Microstructures,2010,47(6):710-713.
[6]JIN C G,XIANG X Q,JIA C,et al.Electrochemical fabrication of large-area,ordered Bi2Te3 nanowire arrays[J].The Journal of Physical Chemistry B,2004,108(6):1844-1847.
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[8]王为,张伟玲,王惠,等.液相电沉积技术制备n-型铋碲纳米线阵列温差电材料[J].无机材料学报,2004,19(1):127-132.
[9]ZHU Y Y,DING G Q,DING J N,et al.AFM,SEM and TEM studies on porous anodic alumina[J].Nanoscale research Letters,2010,5(4):725-734.
[10]RAHMAN S,YANG H.Nanopillar arrays of glassy carbon by anodic aluminum oxide nanoporous templates[J].Nano Letters,2003,3(4):439-442.
[11]李晓洁,张海明,胡国锋,等.AAO模板的制备及其应用[J].材料导报,2008,22(增刊):80-82,95.
[12]PRIETO A L,SANDER M S,MARTíN-GONZáLEZ M S,et al.Electrodeposition of ordered Bi2Te3 nanowire arrays[J].Journal of the American Chemical Society,2001,123(29):7160-7161.
[13]MOTOYAMA M,FUKUNAKA Y,SAKKA T,et al.Electrochemical processing of Cu and Ni nanowire arrays[J].Journal of Electroanalytical Chemistry,2005,584(2):84-91.
[14]姚素薇,莫敏,韩玉鑫,等.铝阳极氧化法制备Al2O3纳米线[J].电镀与涂饰,2005,24(4):1-3.
[15]CAO H Q,WANG L D,QIU Y,et al.Generation and growth mechanism of metal(Fe,Co,Ni)nanotube arrays[J].ChemPhysChem,2006,7(7):1500-1504.