不同基底对等离子体射流放电及薄膜特性的影响
|
摘要
等离子体材料表面处理包括等离子体–基底相互作用过程,绝缘或金属基底的存在会改变等离子体放电和化学气相沉积过程,进而影响沉积薄膜特性。为此重点研究大气压等离子体射流薄膜沉积体系中,等离子体射流激发态粒子和基态OH浓度发展规律,并进一步将等离子体射流放电过程与薄膜特性建立联系。结果表明:薄膜沉积过程中,检测到Ar、N2以及OH相关谱线,有机玻璃(PMMA)基底时谱线强度略高;对于OH自由基的相对密度分布,当基底为PMMA时主要分布在管口附近,而当基底为铜(Cu)时分布在管口与基底间的整个空间区域,并且TEOS的含量增加使得其分解形成的中间产物增加,进而增加薄膜沉积速率。此外,不同的材料会造成靠近基底处的场强有较大差异,如PMMA基底处场强基本维持不变,而Cu基底处场强有所增加。通过对薄膜成分分析和对比,发现PMMA表面沉积的薄膜氧化程度更高且所含的杂质较少。通过对不同基底上沉积薄膜以及沉积过程的对比和诊断,对于理解并解决在应用中的相关问题具有重大意义。
Materials surface modification by plasma involves plasma-substrates interaction. The existence of insulation or metal substrate will change the plasma discharge and chemical vapor deposition process. Consequently, we investigated the influences of different substrates(insulation or metal) on the distribution of active particles and ground state OH, and established a relationship between plasma jet discharge process and film characteristics. The results show that the plasma jet exhibits different characteristics near the substrate during film deposition. The optical emission of Ar, N2 and OH with a higher intensity is observed on the PMMA substrate. The OH free redical mainly distributes near the nozzle when the substrate is PMMA, and distributes in the whole space area between the nozzle and the substrate when the substrate is Cu The increase of TEOS content leads to the increase of the number of intermediate products formed by the decomposition of TEOS, which in turn increases the deposition rate of the films. In addition, the field intensity near the substrate varies with different materials. For example, the field intensity near the PMMA substrate remains basically unchanged while near the Cu substrate it increases. By analyzing and comparing the composition of the films, it is found that the films deposited on PMMA surface have higher oxidation degree and less impurities. Furthermore, by comparing and diagnosing the deposition process of thin films on different substrates, it is of great significance to understand and solve the problems in engineering applications.
Materials surface modification by plasma involves plasma-substrates interaction. The existence of insulation or metal substrate will change the plasma discharge and chemical vapor deposition process. Consequently, we investigated the influences of different substrates(insulation or metal) on the distribution of active particles and ground state OH, and established a relationship between plasma jet discharge process and film characteristics. The results show that the plasma jet exhibits different characteristics near the substrate during film deposition. The optical emission of Ar, N2 and OH with a higher intensity is observed on the PMMA substrate. The OH free redical mainly distributes near the nozzle when the substrate is PMMA, and distributes in the whole space area between the nozzle and the substrate when the substrate is Cu The increase of TEOS content leads to the increase of the number of intermediate products formed by the decomposition of TEOS, which in turn increases the deposition rate of the films. In addition, the field intensity near the substrate varies with different materials. For example, the field intensity near the PMMA substrate remains basically unchanged while near the Cu substrate it increases. By analyzing and comparing the composition of the films, it is found that the films deposited on PMMA surface have higher oxidation degree and less impurities. Furthermore, by comparing and diagnosing the deposition process of thin films on different substrates, it is of great significance to understand and solve the problems in engineering applications.
引文
[1]KASIH T P,KURODA S,KUBOTA H.Atmospheric pressureargon plasma torch for deposition of thin silicon dioxide films[J].Chemical Vapor Deposition,2007,13(4):169-175.
[2]方欣,胡文成,董东.溶胶-凝胶法制备多孔SiO2薄膜开裂问题研究进展[J].材料导报,2008,22(增刊3):18-20.FANG Xin,HU Wencheng,DONG Dong.Research progress in cracking of porous silica films prepared by sol-gel process[J].Materials Review,2008,22(Supplement 3):18-20.
[3]蒋永锋,包晔峰,陈秉岩.溶液中微弧等离子体在材料表面处理的研究进展[J].高压电器,2017,53(4):41-44.JIANG Yongfeng,BAO Yefeng,CHEN Bingyan.Progress for surface treatment of plasma electrolysis on materials[J].High Voltage Apparatus,2017,53(4):41-44.
[4]程显,徐晖,王瑞雪,等.等离子体复合薄膜沉积抑制金属微粒启举[J].电工技术学报,2018,33(20):4672-4681.CHENG Xian,XU Hui,WANG Ruixue,et al.Composite thin film deposited by plasma to inhibit the lifting of metal particles[J].Transactions of China Electrotechnical Society,2018,33(20):4672-4681.
[5]马翊洋,章程,孔飞,等.等离子体射流阵列辅助薄膜沉积对环氧树脂表面电气特性的影响[J].高电压技术,2018,44(9):3089-3096.MA Yiyang,ZHANG Cheng,KONG Fei,et al.Effect of plasma jet array assisted film deposition on epoxy resin surface electrical characteristics[J].High Voltage Engineering,2018,44(9):3089-3096.
[6]方志,张波,周若瑜,等.HMDSO添加对大气压Ar等离子体射流阵列放电特性的影响[J].高电压技术,2017,43(6):1775-1783.FANG Zhi,ZHANG Bo,ZHOU Ruoyu,et al.Effect of HMDSO addition on discharge characteristics of atmospheric pressure plasma jet array in argon[J].High Voltage Engineering,2017,43(6):1775-1783.
[7]龙川,王黎明,戴罕奇,等.介质阻挡放电对RTV涂料憎水性的影响[J].高电压技术,2018,44(2):568-574.LONG Chun,WANG Liming,DAI Hanqi,et al.Effect of dielectric barrier discharge on hydrophobicity of RTV coatings[J].High Voltage Engineering,2018,44(2):568-574.
[8]邵涛,章程,王瑞雪,等.大气压脉冲气体放电与等离子体应用[J].高电压技术,2016,42(3):685-705.SHAO Tao,ZHANG Cheng,WANG Ruixue,et al.Atmospheric-pressure pulsed gas discharge and pulsed plasma application[J].High Voltage Engineering,2016,42(3):685-705.
[9]戴栋,宁文军,邵涛.大气压低温等离子体的研究现状与发展趋势[J].电工技术学报,2017,32(20):1-9.DAI Dong,NING Wenjun,SHAO Tao.A review on the state of art and future trends of atmospheric pressure low temperature plasmas[J].Transactions of China Electrotechnical Society,2017,32(20):1-9.
[10]桑利军,王敏,陈强,等.聚乙烯薄膜表面沉积纳米SiOx涂层的阻隔性能[J].中国表面工程,2015,28(3):36-41.SANG Lijun,WANG Min,CHEN Qiang,et al.Barrier properties of SiOx coatings desposited on polyelene films[J].China Surface Engineering,2015,28(3):36-41.
[11]李文耀,王瑞雪,章程,等.大气压弥散放电辅助Cu表面类SiO2薄膜沉积[J].中国电机工程学报,2016,36(24):6736-6742.LI Wenyao,WANG Ruixue,ZHANG Cheng,et al.Si O2-like film deposition on Cu surface assisted by atmospheric pressure diffuse discharge[J].Proceedings of the CSEE,2016,36(24):6736-6742.
[12]WANG R,CUI C,ZHANG C,et al.Deposition of SiOx film on electrode surface by DBD to improve the lift-off voltage of metal particles[J].IEEE Transactions on Dielectrics and Electrical Insulation,2018,25(4):1285-1292.
[13]WANG R,ZHANG K,SHEN Y,et al.Effect of pulse polarity on the temporal and spatial emission of an atmospheric pressure helium plasma jet[J].Plasma Sources Science&Technology,2016,25(1):015020.
[14]NING W,DAI D,ZHANG Y,et al.Effects of trace of nitrogen on the helium atmospheric pressure plasma jet interacting with a dielectric substrate[J].Journal of Physics D:Applied Physics,2018,51(12):125204.
[15]BABAEVA N Y,NAIDIS G V,PANOV V A,et al.Interaction of argon and helium plasma jets and jets arrays with account for gravity[J].Physics of Plasmas,2018,25(6):063507.
[16]WANG R,XU H,ZHAO Y,et al.Spatial-temporal evolution of a radial plasma jet array and its interaction with material[J].Plasma Chemistry and Plasma Processing,2019,39(1):187-203.
[17]杨微,周前红,董志伟.微波气体放电等离子体与余辉中的动理学研究[J].强激光与粒子束,2018,30(5):053007.YANG Wei,ZHOU Qianhong,DONG Zhiwei.Kinetic study on microwave discharge plasma and its afterglow[J].High Power Laser and Particle Beams,2018,30(5):053007.
[18]韩乾翰,郭颖,申亚军,等.脉冲放电射流辅助射频辉光放电研究[J].强激光与粒子束,2017,29(6):065003.HAN Qianhan,GUO Ying,SHEN Yajun,et al.Enhancement of radio-frequency atmospheric glow discharge by pulsed plasma jet[J].High Power Laser and Particle Beams,2017,29(6):065003.
[19]陈柬,杨静,阮陈,等.射流低温等离子体处理增强环氧表面憎水性研究[J].绝缘材料,2016(4):45-49.CHEN Jian,YANG Jing,RUAN Chen,et al.Study on improving surface hydrophobicity of epoxy resin treated by non-thermal jet plasma[J].Insulating Materials,2016(4):45-49.
[20]HOFMANN S,GILS K V,LINDEN S V D,et al.Time and spatial resolved optical and electrical characteristics of continuous and time modulated RF plasmas in contact with conductive and dielectric substrates[J].European Physical Journal D,2014,68(3):56.
[21]WANG R,XU H,ZHAO Y,et al.Effect of dielectric and conductive targets on plasma jet behavior and thin film properties[J].Journal of Physics D:Applied Physics,2019,52(7):074002.
[22]ABBASI-FIROUZJAH M,HOSSEINI S I,SHARIAT M,et al.The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms[J].Journal of Non-Crystalline Solids,2013,368(1):86-92.
[23]OUARAS K,MAGNE L,PASQUIERS S,et al.OH density measured by PLIF in a nanosecond atmospheric pressure diffuse discharge in humid air under steep high voltage pulses[J].Plasma Sources Science Technology,2018(27):045002.
[24]KOSAREV I N,KHORUNZHENKO V I,MINTOUSSOV E I,et al.Ananosecond surface dielectric barrier discharge at elevated pressures:time-resolved electric field and efficiency of initiation of combustion[J].Plasma Sources Science Technology,2012,21(4):045012.
[25]YOSUKE I,YUTAKA F,KEIICHIRO U,et al.Effect of series capacitance and accumulated charge on a substrate in a deposition process with an atmospheric-pressure plasma jet[J].Japanese Journal of Applied Physics,2010(49):066201.
[2]方欣,胡文成,董东.溶胶-凝胶法制备多孔SiO2薄膜开裂问题研究进展[J].材料导报,2008,22(增刊3):18-20.FANG Xin,HU Wencheng,DONG Dong.Research progress in cracking of porous silica films prepared by sol-gel process[J].Materials Review,2008,22(Supplement 3):18-20.
[3]蒋永锋,包晔峰,陈秉岩.溶液中微弧等离子体在材料表面处理的研究进展[J].高压电器,2017,53(4):41-44.JIANG Yongfeng,BAO Yefeng,CHEN Bingyan.Progress for surface treatment of plasma electrolysis on materials[J].High Voltage Apparatus,2017,53(4):41-44.
[4]程显,徐晖,王瑞雪,等.等离子体复合薄膜沉积抑制金属微粒启举[J].电工技术学报,2018,33(20):4672-4681.CHENG Xian,XU Hui,WANG Ruixue,et al.Composite thin film deposited by plasma to inhibit the lifting of metal particles[J].Transactions of China Electrotechnical Society,2018,33(20):4672-4681.
[5]马翊洋,章程,孔飞,等.等离子体射流阵列辅助薄膜沉积对环氧树脂表面电气特性的影响[J].高电压技术,2018,44(9):3089-3096.MA Yiyang,ZHANG Cheng,KONG Fei,et al.Effect of plasma jet array assisted film deposition on epoxy resin surface electrical characteristics[J].High Voltage Engineering,2018,44(9):3089-3096.
[6]方志,张波,周若瑜,等.HMDSO添加对大气压Ar等离子体射流阵列放电特性的影响[J].高电压技术,2017,43(6):1775-1783.FANG Zhi,ZHANG Bo,ZHOU Ruoyu,et al.Effect of HMDSO addition on discharge characteristics of atmospheric pressure plasma jet array in argon[J].High Voltage Engineering,2017,43(6):1775-1783.
[7]龙川,王黎明,戴罕奇,等.介质阻挡放电对RTV涂料憎水性的影响[J].高电压技术,2018,44(2):568-574.LONG Chun,WANG Liming,DAI Hanqi,et al.Effect of dielectric barrier discharge on hydrophobicity of RTV coatings[J].High Voltage Engineering,2018,44(2):568-574.
[8]邵涛,章程,王瑞雪,等.大气压脉冲气体放电与等离子体应用[J].高电压技术,2016,42(3):685-705.SHAO Tao,ZHANG Cheng,WANG Ruixue,et al.Atmospheric-pressure pulsed gas discharge and pulsed plasma application[J].High Voltage Engineering,2016,42(3):685-705.
[9]戴栋,宁文军,邵涛.大气压低温等离子体的研究现状与发展趋势[J].电工技术学报,2017,32(20):1-9.DAI Dong,NING Wenjun,SHAO Tao.A review on the state of art and future trends of atmospheric pressure low temperature plasmas[J].Transactions of China Electrotechnical Society,2017,32(20):1-9.
[10]桑利军,王敏,陈强,等.聚乙烯薄膜表面沉积纳米SiOx涂层的阻隔性能[J].中国表面工程,2015,28(3):36-41.SANG Lijun,WANG Min,CHEN Qiang,et al.Barrier properties of SiOx coatings desposited on polyelene films[J].China Surface Engineering,2015,28(3):36-41.
[11]李文耀,王瑞雪,章程,等.大气压弥散放电辅助Cu表面类SiO2薄膜沉积[J].中国电机工程学报,2016,36(24):6736-6742.LI Wenyao,WANG Ruixue,ZHANG Cheng,et al.Si O2-like film deposition on Cu surface assisted by atmospheric pressure diffuse discharge[J].Proceedings of the CSEE,2016,36(24):6736-6742.
[12]WANG R,CUI C,ZHANG C,et al.Deposition of SiOx film on electrode surface by DBD to improve the lift-off voltage of metal particles[J].IEEE Transactions on Dielectrics and Electrical Insulation,2018,25(4):1285-1292.
[13]WANG R,ZHANG K,SHEN Y,et al.Effect of pulse polarity on the temporal and spatial emission of an atmospheric pressure helium plasma jet[J].Plasma Sources Science&Technology,2016,25(1):015020.
[14]NING W,DAI D,ZHANG Y,et al.Effects of trace of nitrogen on the helium atmospheric pressure plasma jet interacting with a dielectric substrate[J].Journal of Physics D:Applied Physics,2018,51(12):125204.
[15]BABAEVA N Y,NAIDIS G V,PANOV V A,et al.Interaction of argon and helium plasma jets and jets arrays with account for gravity[J].Physics of Plasmas,2018,25(6):063507.
[16]WANG R,XU H,ZHAO Y,et al.Spatial-temporal evolution of a radial plasma jet array and its interaction with material[J].Plasma Chemistry and Plasma Processing,2019,39(1):187-203.
[17]杨微,周前红,董志伟.微波气体放电等离子体与余辉中的动理学研究[J].强激光与粒子束,2018,30(5):053007.YANG Wei,ZHOU Qianhong,DONG Zhiwei.Kinetic study on microwave discharge plasma and its afterglow[J].High Power Laser and Particle Beams,2018,30(5):053007.
[18]韩乾翰,郭颖,申亚军,等.脉冲放电射流辅助射频辉光放电研究[J].强激光与粒子束,2017,29(6):065003.HAN Qianhan,GUO Ying,SHEN Yajun,et al.Enhancement of radio-frequency atmospheric glow discharge by pulsed plasma jet[J].High Power Laser and Particle Beams,2017,29(6):065003.
[19]陈柬,杨静,阮陈,等.射流低温等离子体处理增强环氧表面憎水性研究[J].绝缘材料,2016(4):45-49.CHEN Jian,YANG Jing,RUAN Chen,et al.Study on improving surface hydrophobicity of epoxy resin treated by non-thermal jet plasma[J].Insulating Materials,2016(4):45-49.
[20]HOFMANN S,GILS K V,LINDEN S V D,et al.Time and spatial resolved optical and electrical characteristics of continuous and time modulated RF plasmas in contact with conductive and dielectric substrates[J].European Physical Journal D,2014,68(3):56.
[21]WANG R,XU H,ZHAO Y,et al.Effect of dielectric and conductive targets on plasma jet behavior and thin film properties[J].Journal of Physics D:Applied Physics,2019,52(7):074002.
[22]ABBASI-FIROUZJAH M,HOSSEINI S I,SHARIAT M,et al.The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms[J].Journal of Non-Crystalline Solids,2013,368(1):86-92.
[23]OUARAS K,MAGNE L,PASQUIERS S,et al.OH density measured by PLIF in a nanosecond atmospheric pressure diffuse discharge in humid air under steep high voltage pulses[J].Plasma Sources Science Technology,2018(27):045002.
[24]KOSAREV I N,KHORUNZHENKO V I,MINTOUSSOV E I,et al.Ananosecond surface dielectric barrier discharge at elevated pressures:time-resolved electric field and efficiency of initiation of combustion[J].Plasma Sources Science Technology,2012,21(4):045012.
[25]YOSUKE I,YUTAKA F,KEIICHIRO U,et al.Effect of series capacitance and accumulated charge on a substrate in a deposition process with an atmospheric-pressure plasma jet[J].Japanese Journal of Applied Physics,2010(49):066201.
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |