高垂直度和低沉积的MEMS陀螺梳齿结构释放工艺
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摘要
梳齿型微机电系统(MEMS)陀螺的释放要求结构具有垂直度高、释放过程沉积聚合物少的特点,通过优化深硅刻蚀的工艺参数,包括钝化气体八氟环丁烷(C_4F_8)的流量、衬底温度、刻蚀气体六氟化硫(SF_6)的流量和钝化气体C_4F_8的压力,实现了结构垂直度为90.0°、支撑层表面沉积物厚度为87.1nm的梳齿结构释放工艺。深硅刻蚀工艺的优化为高性能MEMS陀螺的加工提供了基础。
The comb shaped MEMS gyroscopes should be made with high vertical degree and less deposition polymer.By optimizing the parameters of deep silicon etching including C_4 F_8 flow,platen temperature,SF_6 flow and C_4 F_8 pressure,the structure with vertical degree of 90.0°and production thickness of 87.1 nm can be achieved.The optimization of deep silicon etching process is the basic for the MEMS gyroscopes manufacturing with high properties.
The comb shaped MEMS gyroscopes should be made with high vertical degree and less deposition polymer.By optimizing the parameters of deep silicon etching including C_4 F_8 flow,platen temperature,SF_6 flow and C_4 F_8 pressure,the structure with vertical degree of 90.0°and production thickness of 87.1 nm can be achieved.The optimization of deep silicon etching process is the basic for the MEMS gyroscopes manufacturing with high properties.
引文
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[2]LABELLE C B,DONNELLY V M,BOGART G R,et al.Investigation of fluorocarbon plasma deposition from c-C4F8for use as passivation during deep silicon etching[J].Journal of Vacuum Science&Technology A:Vacuum Surfaces and Films,2004,22(6):2500-2507.
[3]张旭,张迪雅.梳齿型深硅刻蚀工艺研究[J].仪表技术与传感器,2018,2:1-3,27.ZHANG X,ZHANG D Y.Process Study of Comb-shaped Deep Silicon Etching[J].Instrument Technique and Sensor,2018,2:1-3,27(in Chinese).
[4]LAI S L,JOHNSON D,WESTERMAN R.Aspect ratio dependent etching lag reduction in deep silicon etch processes[J].Journal of Vacuum Science&Technology A:Vacuum Surfaces&Films.2006,24(4):1283-1288.
[5]李伟忠,孙鹏.战术导弹用MEMS陀螺仪研制进展及关键技术[J].导航与控制,2017,16(3):97-104.LI W Z,SUN P.Research on progress and the key technology of MEMS gyroscope in tactical missile[J].Navigation and Control,2017,16(3):97-104(in Chinese).
[6]张洪海,苑伟政,马志波.一种硅深刻蚀中抑制Lag效应的新方法[J].航空精密制造技术,2010,46(3):9-11.ZHANG H H,YUAN W Z,MA Z B.Method to avoid ARDE lag of silicon DRIE[J].Aviation Precision Manufacturing Technology,2010,46(3):9-11(in Chinese).
[7]刘方方,展明浩,许高斌,等.ICP硅深刻蚀槽壁垂直度的研究[J].微纳电子技术,2015,52(3):185-190.LIU F F,ZHAN M H,XU G B,et al.Study on vertical degree of ICP silicon deep etching groove wall[J].Micronanoelectronic Technology,2015,52(3):185-190(in Chinese).
[8]张丹,郑志霞,冯勇建.硅的凸角补偿尺寸及腐蚀中避免削角的新方法[J].微纳电子技术,2004,41(8):42-44.ZHANG D,ZHENG Z X,FENG Y J.Dimension of convex corner compensation and a new method of avoiding corner undercutting in etching of Si[J].Micronanoelectronic Technology,2004,41(8):42-44(in Chinese).