混合型直流断路器用IGBT测试平台建模与分析
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摘要
为准确得到绝缘栅双极型晶体管(IGBT)在混合型直流断路器下的性能参数,测试平台的设计非常重要。结合断路器的特殊工况,对测试平台关键部件模型进行分析,并考虑寄生参数建立测试平台精细化电路模型。仿真分析了测试平台寄生参数对被测IGBT测试电气应力的影响。结果表明,寄生电阻对测试应力影响很小,而缓冲电容换流回路寄生电感对IGBT关断能量影响显著,金属氧化物可变电阻器(MOV)放电回路寄生电感对IGBT的过电压影响显著,且各支路寄生电感对IGBT过电压的影响存在耦合性。建立的平台模型和寄生参数分析可以有效指导断路器用功率器件测试平台设计。
In order to accurately obtain the performance parameters of the insulated gate bipolar transistor(IGBT)under the hybrid DC circuit breaker, the design of the test platform is very important. Combined with the special working conditions of the circuit breaker, the key component model of the test platform was analyzed, and the parasitic parameters were considered to establish a refined circuit model for the test platform. The influence of the parasitic parameters of the test platform on the electrical stress of the tested IGBT was simulated and analyzed. The results show that the parasitic resistance has little effect on the test stress, and the parasitic inductance of the snubber capacitor commutation loop significantly affects the IGBT turn-off energy, the parasitic inductance of the metal oxide varistor(MOV)discharge loop significantly affects the IGBT overvoltage, and the influence of the parasitic inductance of each branch on the IGBT overvoltage is coupled. The platform model and parasitic parameter impact analysis can effectively guide the design of power device test platform for circuit breakers.
In order to accurately obtain the performance parameters of the insulated gate bipolar transistor(IGBT)under the hybrid DC circuit breaker, the design of the test platform is very important. Combined with the special working conditions of the circuit breaker, the key component model of the test platform was analyzed, and the parasitic parameters were considered to establish a refined circuit model for the test platform. The influence of the parasitic parameters of the test platform on the electrical stress of the tested IGBT was simulated and analyzed. The results show that the parasitic resistance has little effect on the test stress, and the parasitic inductance of the snubber capacitor commutation loop significantly affects the IGBT turn-off energy, the parasitic inductance of the metal oxide varistor(MOV)discharge loop significantly affects the IGBT overvoltage, and the influence of the parasitic inductance of each branch on the IGBT overvoltage is coupled. The platform model and parasitic parameter impact analysis can effectively guide the design of power device test platform for circuit breakers.
引文
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[14] 丁骁, 汤广福, 韩民晓,等. IGBT串联阀混合式高压直流断路器分断应力分析[J]. 中国电机工程学报, 2018, 36(6):1846-1868.DING X, TANG G F, HAN M X, et al. Analysis of the turn-off stress on hybrid DC circuit breaker with IGBT series valve[J]. Proceedings of the CSEE, 2018, 36(6):1846-1868 (in Chinese).
[15] 赵芬. IGBT模型仿真研究[D]. 合肥:合肥工业大学, 2010.
[16] MARTINEZ J A,DURBAK D W.Parameter determination for modeling systems transients-part V: surge arresters[J].IEEE Transactions on Power Delivery,2005,20(3):2073-2078.
[17] JONES R A, CLIFTON P R, GROTZ G, et al. Modeling of metal oxide surge arresters[J]. IEEE Transactions on Power Delivery, 1992, 7(1):302-309.
[2] 顾益磊, 唐庚, 黄晓明,等. 含多端柔性直流输电系统的交直流电网动态特性分析[J]. 电力系统自动化, 2013, 37(15):27-34.GU Y L, TANG G, HUANG X M, et al. Dynamic characteristic analysis of hybrid AC/DC power grid with multi-terminal HVDC based on modular multilevel converter[J]. Automation of Electric Power Systems, 2013, 37(15):27-34(in Chinese).
[3] FRANCK C M. HVDC circuit breakers: a review identi-fying future research needs[J]. IEEE Transactions on Power Delivery, 2011, 26(2):998-1007.
[4] 张祖安, 黄瑜珑, 温伟杰,等. 基于VSC的直流输电系统中快速直流断路器的重要性和研究[C]//首届直流输电与电力电子专委会学术年会. 北京,中国,2012:512-519.
[5] 冷国庆,赵哿,金锐,等. 高关断能力压接型IGBT器件研制[J].大功率变流技术,2017(5):70-73.LENG G Q, ZHAO G, JIN R, et al. Research on the press-pack IGBT with high SCSOA[J]. High Power Converter Technology, 2017 (5):70-73 (in Chinese).
[6] DUGAL F, BASCHNAGEL A, RAHIMO M, et al. The next generation 4 500 V/3 000 A BIGT stakpak modules[C]// Proceedings of the International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nuremberg, Germany, 2017:1-5.
[7] CALLAVIK M, BLOMBERG A, H?FNER J, et al. The hybrid HVDC breaker an innovation breakthrouth enabling reliable HVDC grids[R]. 2012.
[8] BELDA N A, SMEETS R P P. Test circuits for HVDC circuit breakers[J]. IEEE Transactions on Power Deli-very, 2017, 32(1):285-293.
[9] CHEN Z Y, YU Z Q, ZHANG X Y, et al. Analysis and experiments for IGBT, IEGT, and IGCT in hybrid DC circuit breaker[J]. IEEE Transactions on Industrial Electronics, 2018, 65(4):2883-2892.
[10] 赵志斌, 邓二平, 张朋,等. 换流阀用与直流断路器用压接型IGBT器件差异分析[J]. 电工技术学报, 2017, 32(19):125-133.ZHAO Z B, DENG E P, ZHANG P, et al. Review of the difference between the press pack IGBT using for converter valve and for DC breaker[J]. Transactions of China Electrotechnical Society, 2017, 32(19):125-133 (in Chinese).
[11] 邹凯凯. 高压IGBT模块动态特性测试与建模[D]. 北京:华北电力大学, 2015.
[12] 马义勇. 压接式IGBT开关特性测试平台的设计[D]. 北京:北京交通大学, 2017.
[13] FINK K, BERNET S. Advanced gate drive unit with closed-loop di/dt control [J]. IEEE Transactions on Power Electronics, 2013, 28(5):2587-2595.
[14] 丁骁, 汤广福, 韩民晓,等. IGBT串联阀混合式高压直流断路器分断应力分析[J]. 中国电机工程学报, 2018, 36(6):1846-1868.DING X, TANG G F, HAN M X, et al. Analysis of the turn-off stress on hybrid DC circuit breaker with IGBT series valve[J]. Proceedings of the CSEE, 2018, 36(6):1846-1868 (in Chinese).
[15] 赵芬. IGBT模型仿真研究[D]. 合肥:合肥工业大学, 2010.
[16] MARTINEZ J A,DURBAK D W.Parameter determination for modeling systems transients-part V: surge arresters[J].IEEE Transactions on Power Delivery,2005,20(3):2073-2078.
[17] JONES R A, CLIFTON P R, GROTZ G, et al. Modeling of metal oxide surge arresters[J]. IEEE Transactions on Power Delivery, 1992, 7(1):302-309.