Tuning Chemical Potential Difference across Alternately Doped Graphene p–n Junctions for High-Efficiency Photodetection

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• 作者：Li Lin ; Xiang Xu ; Jianbo Yin ; Jingyu Sun ; Zhenjun Tan ; Ai Leen Koh ; Huan Wang ; Hailin Peng ; Yulin Chen ; Zhongfan Liu
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：July 13, 2016
• 年：2016
• 卷：16
• 期：7
• 页码：4094-4101
• 全文大小：459K
• 年卷期：0
• ISSN：1530-6992

文摘

Being atomically thin, graphene-based p–n junctions hold great promise for applications in ultrasmall high-efficiency photodetectors. It is well-known that the efficiency of such photodetectors can be improved by optimizing the chemical potential difference of the graphene p–n junction. However, to date, such tuning has been limited to a few hundred millielectronvolts. To improve this critical parameter, here we report that using a temperature-controlled chemical vapor deposition process, we successfully achieved modulation-doped growth of an alternately nitrogen- and boron-doped graphene p–n junction with a tunable chemical potential difference up to 1 eV. Furthermore, such p–n junction structure can be prepared on a large scale with stable, uniform, and substitutional doping and exhibits a single-crystalline nature. This work provides a feasible method for synthesizing low-cost, large-scale, high efficiency graphene p–n junctions, thus facilitating their applications in optoelectronic and energy conversion devices.