Optoelectronic Memory Using Two-Dimensional Materials

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• 作者：Sidong Lei ; Fangfang Wen ; Bo Li ; Qizhong Wang ; Yihan Huang ; Yongji Gong ; Yongmin He ; Pei Dong ; James Bellah ; Antony George ; Liehui Ge ; Jun Lou ; Naomi J. Halas ; Robert Vajtai ; Pulickel M. Ajayan
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：January 14, 2015
• 年：2015
• 卷：15
• 期：1
• 页码：259-265
• 全文大小：376K
• ISSN：1530-6992

文摘

An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn₇Se₁₁ and extended to InSe and MoS₂ atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage.