(Sn,Al)Ox Films Grown by Atomic Layer Deposition

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• 作者：Jaeyeong Heo ; Yiqun Liu ; Prasert Sinsermsuksakul ; Zhefeng Li ; Leizhi Sun ; Wontae Noh ; Roy G. Gordon
• 刊名：Journal of Physical Chemistry C
• 出版年：2011
• 出版时间：May 26, 2011
• 年：2011
• 卷：115
• 期：20
• 页码：10277-10283
• 全文大小：924K
• 年卷期：v.115,no.20(May 26, 2011)
• ISSN：1932-7455

文摘

(Sn,Al)O_x composite films with various aluminum (Al) to tin (Sn) ratios were deposited using an atomic layer deposition technique. The chemisorption behavior of cyclic amide of tin(II) and trimethylaluminum were analyzed by Rutherford backscattering spectroscopy. Both precursors showed retarded and enhanced chemisorption on Al₂O₃ and SnO₂ surfaces, respectively. The films show highly anisotropic electrical conductivity, i.e., much higher resistivity in the direction through the film than parallel to the surface of the film. The cause of the anisotropy was investigated by cross-sectional transmission electron microscopy, which showed a nanolaminate structure of crystalline SnO₂ grains separated by thin, amorphous Al₂O₃ monolayers. When the Al concentration was higher than 35 atom %, the composite films became amorphous, and the vertical and lateral direction resistivity values converged toward one value. By properly choosing the ratio of SnO₂ and Al₂O₃ subcycles, controlled adjustment of film electrical resistivity over more than 15 orders of magnitude was successfully demonstrated.