Few-layer arsenic trichalcogenides: Emerging two-dimensional semiconductors with tunable indirect-direct band-gaps

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• 作者：Naihua Miao^a ; ^b ; Jian Zhou^a ; ^{jzhou@buaa.edu.cn} ; Baisheng Sa^c ; ^a ; Bin Xu^d ; Zhimei Sun^a ; ^b ; ^{zmsun@buaa.edu.cn}
• 关键词：Indirect-direct band-gap transition ; Arsenic trichalcogenides ; First-principles calculations
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：30 March 2017
• 年：2017
• 卷：699
• 期：Complete
• 页码：554-560
• 全文大小：1536 K
• 卷排序：699

文摘

Prediction of few-layer arsenic trichalcogenides with broad and tunable band-gaps. Strain-induced indirect to direct band-gap transition in these layered compounds. Low exfoliation energy renders them attractive for artificial hetrostructures. Promising candidates for applications in photocatalysis and optoelectronics.