Single-step sulfo-selenization method for achieving low open circuit voltage deficit with band gap front-graded Cu₂ZnSn(S,Se)₄ thin films

详细信息    查看全文

• 作者：Dae-Kue Hwang^a ; ^{dkhwang@dgist.ac.kr} ; Byoung-Soo Ko^a ; Dong-Hwan Jeon^a ; Jin-Kyu Kang^a ; Shi-Joon Sung^a ; Kee-Jeong Yang^a ; Dahyun Nam^b ; Soyeon Cho^b ; Hyeonsik Cheong^b ; Dae-Hwan Kim^a ; ^{monolith@dgist.ac.kr}
• 关键词：CZTSSe thin films ; Sulfo-selenization ; Band gap front-grading ; Low open circuit voltage deficit
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：161
• 期：Complete
• 页码：162-169
• 全文大小：1242 K
• 卷排序：161

文摘

We investigate the properties of band gap front-graded CZTSSe thin films. The precursors are annealed by a modified single-step sulfo-selenization process. The CZTSSe thin-film solar cell exhibits power conversion efficiency of 10.33%. The high Voc and less loss of Jsc are attributed to the band gap front-grading.