Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?
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- 作者：R. Peibsta ; b ; peibst@isfh.de" class="auth_mail" title="E-mail the corresponding author ; U. Rö ; mera ; Y. Larionovaa ; M. Rienä ; ckera ; A. Merklea ; N. Folcherta ; S. Reitera ; M. Turcua ; B. Mina ; J. Krü ; generb ; D. Tetzlaffb ; E. Bugielb ; T. Wietlerb ; c ; R. Brendela ; d
- 关键词：Passivating contact ; Polysilicon ; Passivating contact ; Passivation ; Modelling ; Silicon solar cell
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：158
- 期：part_P1
- 页码：60-67
- 全文大小：2072 K
文摘
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Plausible arguments for additional current transport mechanisms in POLO junctions besides tunneling.
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Presentation of an alternative picture based on local current flow.
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Excellent agreement between model and experimental data for reasonable input parameters.
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Deduction of an optimization strategy for p+ poly-Si/c-Si junctions.
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Record J0 values for n+ POLO junctions with wet chemically (thermally) grown interfacial oxide – 1.5 (0.7) fA/cm2.
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Record J0 values for p+ POLO junctions with wet chemically grown interfacial oxides – 8 fA/cm2.
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