Low pressure MOVPE growth and characterization of ZnTe homoepitaxial layers

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• 作者：Mitsuhiro Nishio ; Katsuhiko Saito ; Masakatsu Abiru ; Eiichiro Mori ; Yasuhiro Araki ; Daichi Tanaka ; Tooru Tanaka and Qixin Guo
• 刊名：physica status solidi (c)
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：13
• 期：7-9
• 页码：439-442
• 全文大小：383K
• ISSN：1610-1642a

文摘

The growth rate and photoluminescence (PL) spectrum of ZnTe homoepitaxial layer grown at a reactor pressure of 500 Torr by metalorganic vapor phase epitaxy have been clarified as a function of substrate temperature. An optimum substrate temperature for obtaining ZnTe layers with better PL property is determined by taking into account the growth rate behavior. Furthermore, the growth rate, PL spectrum, surface roughness and surface morphology of ZnTe layer have also been investigated by varying reactor pressure. With increasing reactor pressure, both the PL property and surface roughness of ZnTe layer are improved and subsequently become degraded, according as the growth rate increases monotonically and then shows saturated tendency. Change in the surface morphology of ZnTe layer with the increase of reactor pressure resembles that with the decrease of substrate temperature, probably due to the change from mass-transport regime to surface kinetics one. (