基于二极管端电压的IGBT模块键合线状态监测
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摘要
绝缘栅双极型晶体管(IGBT)模块键合线与芯片的热膨胀系数不匹配所引起的键合线故障是模块失效的重要因素。在此将通过分析IGBT功率模块中续流二极管的端电压与结温的关系曲线在键合线断裂前后的变化来监测IGBT模块部分键合线的健康状况。通过理论分析和实验验证,证明了IGBT模块中续流二极管的端电压值会随着键合线的脱落而增大,且随着键合线脱落根数的增加而严格递增,因此结温与二极管端电压关系曲线在键合线故障前后是上升的。通过实时测试二极管端电压与对应的结温值并与健康状态下相同结温下的二极管端电压值相比较,便可判断对应位置键合线的健康状态。
The wire bonding faults caused by the mismatching coefficients of thermal expansion between the chip and bonding wires is an important factor for the failure of the insulated gate bipolar transistor(IGBT) modules.This paper will research the change of the relation between diodes terminal voltage and junction temperature before and after the failure of bonding lines to monitor the health status of IGBT modules.Through theoretical analysis and experimental verification, it proved that the terminal voltage drop of freewheeling diodes in the IGBT module increases with the fall of the bonding lines,and increases strictly with the number of broken wires' increasing,which directly presented by the rise of the curves of relationship between junction temperature and terminal voltage.By testing the relationship between junction temperature and terminal voltage in real time, and comparing with the corresponding curves in health state, we can judge whether there is a fault in the bonding line of the corresponding position.
The wire bonding faults caused by the mismatching coefficients of thermal expansion between the chip and bonding wires is an important factor for the failure of the insulated gate bipolar transistor(IGBT) modules.This paper will research the change of the relation between diodes terminal voltage and junction temperature before and after the failure of bonding lines to monitor the health status of IGBT modules.Through theoretical analysis and experimental verification, it proved that the terminal voltage drop of freewheeling diodes in the IGBT module increases with the fall of the bonding lines,and increases strictly with the number of broken wires' increasing,which directly presented by the rise of the curves of relationship between junction temperature and terminal voltage.By testing the relationship between junction temperature and terminal voltage in real time, and comparing with the corresponding curves in health state, we can judge whether there is a fault in the bonding line of the corresponding position.
引文
[1]赖伟,陈民铀,冉立,等.老化实验条件下的IGBT失效机理分析[J].中国电机工程学报,2015,35(20):45-50.
[2] REIGPATH N,DAS D,GOEBEL K,et al.Identification of Failure Precursor Parameters for Insulated Gate Bipolar Transistors(IGBTs)[A].International Conference on Prognostics and Health Management[C].2008:1-5.
[3] WEI Kexin,DU Mingxing,XIE Linlin,et al.Study of Bonding Wire Failure Effects on External Measurable Signals of IGBT Module[J].IEEE Journals Magazines,2014,14(1):83-89.
[4] JI Bing,PICKERT V,CAO Wenping,et al.In Situ Diagnostics and Prognostics of Wire Bonding Faults in IGBT Modules for Electric Vehicle Drives[J].IEEE Trans. on Power Electronics.2013.28(12):45-50.
[2] REIGPATH N,DAS D,GOEBEL K,et al.Identification of Failure Precursor Parameters for Insulated Gate Bipolar Transistors(IGBTs)[A].International Conference on Prognostics and Health Management[C].2008:1-5.
[3] WEI Kexin,DU Mingxing,XIE Linlin,et al.Study of Bonding Wire Failure Effects on External Measurable Signals of IGBT Module[J].IEEE Journals Magazines,2014,14(1):83-89.
[4] JI Bing,PICKERT V,CAO Wenping,et al.In Situ Diagnostics and Prognostics of Wire Bonding Faults in IGBT Modules for Electric Vehicle Drives[J].IEEE Trans. on Power Electronics.2013.28(12):45-50.