脉冲激光沉积法制备红外光学SiC薄膜特性研究
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摘要
采用脉冲激光沉积法在锗基底制备无氢SiC薄膜,研究了激光能量对SiC薄膜显微结构、成分和红外光学性能的影响规律。利用傅里叶红外光谱仪测量了锗基底SiC薄膜样品的红外透射光谱,其在785 cm~(-1)附近有一个强烈Si-C键特征吸收峰,并在红外波数4 000～1 300 cm~(-1)之间具有良好的透过性。通过对透射光谱拟合计算可知:在红外波段2.5～7.7μm之间,SiC薄膜的折射率和消光系数均随着激光能量的增加而增大,折射率大约从2.15上升到2.33,激光能量从400 mJ增加到600 mJ,且当激光能量为400、500 mJ时,消光系数均在10~(-3)量级以内,光学吸收很小。研究表明,SiC薄膜在红外2.5～7.7μm波段是一种优异的光学薄膜材料。
Non-hydrogen silicon carbide(SiC) films were deposited on germanium substrate by pulsed laser deposition. The effects of laser energy on the microstructure, composition and infrared optical properties of SiC films were investigated. The infrared transmittance spectrums of SiC films were measured by Fourier transform infrared spectroscopy(FTIR). The spectroscopy analysis showed that the characteristic absorption peak of Si-C bonding was found at 785 cm~(-1), and the SiC films had good transmittance in the range of 4 000-1 300 cm~(-1). The optical constants of the SiC films were derived by fitting transmittance spectrum curves. It was found that the refractive index and the extinction coefficient of SiC films increased monotonicly with laser energies increasing in the range of 2.5-7.7 μm. The refractive index changed from 2.15 to 2.33 as laser energies increased from 400 mJ to 600 m J. The extinction coefficient was of the order of 10~(-3) when laser energies were of 400 m J and 500 m J. This study indicates that the SiC film is an excellent optical film material between 2.5 μm to 7.7 μm.
Non-hydrogen silicon carbide(SiC) films were deposited on germanium substrate by pulsed laser deposition. The effects of laser energy on the microstructure, composition and infrared optical properties of SiC films were investigated. The infrared transmittance spectrums of SiC films were measured by Fourier transform infrared spectroscopy(FTIR). The spectroscopy analysis showed that the characteristic absorption peak of Si-C bonding was found at 785 cm~(-1), and the SiC films had good transmittance in the range of 4 000-1 300 cm~(-1). The optical constants of the SiC films were derived by fitting transmittance spectrum curves. It was found that the refractive index and the extinction coefficient of SiC films increased monotonicly with laser energies increasing in the range of 2.5-7.7 μm. The refractive index changed from 2.15 to 2.33 as laser energies increased from 400 mJ to 600 m J. The extinction coefficient was of the order of 10~(-3) when laser energies were of 400 m J and 500 m J. This study indicates that the SiC film is an excellent optical film material between 2.5 μm to 7.7 μm.
引文
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[2]Craciun D,Socol G,Cristea D V,et al.Mechanical properties of pulsed laser deposited nanocrystalline SiCfilms[J].Applied Surface Science,2015,336:391-395.
[3]Li Zhuolin,Lee W B.Study on removal characteristic of silicon carbide surface in precision mechanical polishing[J].Infrared and Laser Engineering,2016,45(2):0220003.(in Chinese)李卓霖,李荣彬.精密数控抛光碳化硅表面去除特性研究[J].红外与激光工程,2016,45(2):0220003.
[4]Wang Sicong,Ji Lingfei,Wu Yan,et al.Progress in research on luminescence properties and modification of SiC[J].Journal of Materials Engineering,2017,45(2):102-111.(in Chinese)王思聪,季凌飞,吴燕,等.SiC发光特性及其调控研究进展[J].材料工程,2017,45(2):102-111.
[5]Zhao Rucheng,Bao Jianxun.Investigation and application of lar ge scale lightweight SiC mirror[J].Chinese Optics,2014,7(4):552-558.(in Chinese)赵汝成,包建勋.大口径轻质SiC反射镜的研究与应用[J].中国光学,2014,7(4):552-558.
[6]Chen Hong,Gao Jinsong,Song Qi,et al.Si modified coating on SiC substrate by ion beam assisted deposition[J].Optics and Precision Engineering,2008,16(3):381-385.(in Chinese)陈红,高劲松,宋琦,等.离子束辅助制备碳化硅改性薄膜[J].光学精密工程,2008,16(3):381-385.
[7]Sun Wenli,Xu Jun,Lu Wenqi.Chemical structure and growth mechanism of a-SixC1-x:H films prepared by plasma enhanced magnetron sputtering[J].Acta Physico-Chimica Sinica,2010,26(8):2311-2316.(in Chinese)孙文立,徐军,陆文琪.等离子体增强磁控溅射沉积碳化硅薄膜的化学结构与成膜机理[J].物理化学学报,2010,26(8):2311-2316.
[8]Li Shuxin,Cao Yunqing,Rui Yunjun,et al.Effect of hydrogen plasma treatment on the photoelectric properties of single layer silicon carbide thin films[C]//13th National Conference on Thin Solid Films,2012,8:178.(in Chinese)李淑鑫,曹蕴清,芮云军,等.氢逐层等离子体处理对单层碳化硅薄膜光电性质的影响[C]//第十三届全国固体薄膜学术会议论文集,2012,8:178.
[9]Chang Yong.Diamond Like Film Deposition by Pulsed Laser Deposition[M].Beijing:Science Press,2017:67-68.(in Chinese)程勇.脉冲激光沉积类金刚石膜技术[M].北京:科学出版社,2017:67-68.
[10]Reitano R,Baeri P,Marino N.Excimer laser induced thermal evaporation and ablation of silicon carbide[J].Applied Surface Science,1996,(96-98):302-308.
[11]Socola G,Galcab A C,Craciuna D,et al.Pulsed laser deposition of nanocrystalline SiC films[J].Applied Surface Science,2014,306:66-69.
[12]Liu Huasong,Yang Xiao,Liu Dandan,et al.Physical model of optical constants of SiO2thin films[J].Infrared and Laser Engineering,2017,46(9):0921003.(in Chinese)刘华松,杨霄,刘丹丹,等.SiO2薄膜光学常数物理模型[J].红外与激光工程,2017,46(9):0921003.
[13]Shen Zhenfeng.Preparation of a specific refractive index material by doping for optical thin films[J].Chinese Optics,2013,6(6):900-904.(in Chinese)申振峰.特定折射率材料及光学薄膜制备[J].中国光学,2013,6(6):900-904.
[14]Wang Fengli,Zhang Zhuangzhuang,Wang Zhanshan,et al.Optical contast of MgF2coatings for Al/MgF2mirror in vacuum ultraviolet region[J].Optics and Precision Engineering,2017,25(11):2823-2828.(in Chinese)王风丽,张壮壮,王占山,等.真空紫外波段Al膜保护层MgF2的光学常数[J].光学精密工程,2017,25(11):2823-2828.
[15]Pan Yongqiang,Wu Zhensen.Infrared optical properties of hydrogenated amorphous carbon films(a-C:H)[J].Infrared and Laser Engineering,2006,35(6):777-779.(in Chinese)潘永强,吴振森.含氢非晶碳膜(a-C:H)红外光学特性的研究[J].红外与激光工程,2006,35(6):777-779.