纳米氮化硅、氮化碳及碳材料的合成方法探索
|
摘要
本论文分别采用高温固相法及低温溶剂热法、气相热解法和溶剂热催化法探索了氮化硅、氮化碳和碳材料等多种纳米结构的合成方法。由于所用原料比较廉价、条件相对温和或者方法简便、产率较高,这几种方法均具有一定的工业应用前景。
1、以NaN_3,SiCl_4和Mg粉为原料,在200-350℃温度下于高压釜中合成了结晶良好的α相和β相混合的氮化硅粉体,该反应转化率为54.04%;对上述实验设计了正交实验,得到了合成氮化硅的优化条件;在1 L反应釜中进行了放大实验,反应转化率为50%,表明该方法存在很好的工业应用前景。相关研究工作的成果发表在International journal of applied ceramicstechnology。
2、以廉价的硅铁合金和氯化铵为原料,在600℃合成了α相的氮化硅纳米线束,单根纳米线直径8 nm,长达800 nm,考察了反应温度和反应时间对产物纯度和形貌的影响;以硅粉和铁粉为原料合成了纯度良好,直径为150～500 nm的α-Si_3N_4亚微粒子;以硅粉和铝粉为原料在400-600℃合成了直径为10 nm左右的α相氮化硅纳米线束。由于所用原料均为较廉价的工业产品,该合成方法存在一定的工业应用前景。
3、在400℃下,以三聚氰胺和镁为原料,通过热解反应制备了石墨相氮化碳纳米线束;以纳米线束为前躯体,550℃煅烧后得到长度约为几个微米,管径500-800 nm的六方氮化碳纳米管和氮化碳片状阵列。与其他方法相比,该方法步骤简单、条件温和,得到的氮化碳形貌新颖,为氮化碳材料的制备提供了一条思路。相关研究工作的成果发表在高等学校化学研究
4、以四氢呋喃为反应原料,以铁粉和镍粉为催化剂,通过溶剂热催化方法在500℃一步合成了平均直径为100 nm,长度达10μm以上的纳米碳纤维;以乙醇为原料,以NaBH_4为催化还原剂,在500℃一步合成出具有独特“烟斗状”形貌,直径约1μm,长度达10μm以上的碳胶囊。由于步骤简便和较高的产率,本方法经过进一步研究可以应用于一维碳材料的规模生产。相关研究工作的成果发表在无机化学学报(英文版)
This dissertation concentrates on the synthesis of silicon nitride,carbon nitride and carbon nanostructures through solid phase reaction,solvothermal route at low temperature,thermolysis and solvothermal catalytic methods.As the reactant is very cheap and the reaction condition is mild,these methods are promising in industrial application to some extent.
1.The mixtures ofα- andβ-Si_3N_4 nano-crystalline were prepared in 200-350℃using NAN_3,SiCl_4 and Mg powder as the starting materials.The conversion ratio was 54.04%calculated from the amount of limited reactant NAN_3. Orthogonal strategy was performed to find the optimized reaction condition. Magnified experiments were carried out in a 1000 ml autoclave.The conversion ratio was about 50%which indicated that it was a promising process in industrial application.
2.Starting from ferro-silicone alloy brezee and ammonium chloride,α-Si_3N_4 nanowires bundles have been obtained at 600℃.The nanowires have about 8 nm in diameter,up to 800 nm in length.The influence of reaction time and temperature on the products was investigated.Using silicon and metallic iron,α-Si_3N_4 olivary microparticles with a diameter of about 300～500 nm have been obtained at 650℃.When silicon and metallic aluminium were used to react with ammonium chloride,α-Si_3N_4 nanowire bundles with diameter of about 8 nm can be also obtained at 600℃.Since all of the starting materials used are relatively cheap,the methods will have potential prospect in industrial application.
3.Graphite-like carbon nitride nanowire bundles with diameters of 200-500 nm were synthesized from the solid state thermolysis of melamine at relatively low temperature(400℃).Hexagonal carbon nitride tubes with diameters of 500-800 nm and flake arrays were prepared by heating the nanowire bundles at 550℃in argon atmosphere.The products were characterized in detail and the forming process of tubes and transformation of the molecular structures from s-triazine rings to tri-s-triazine units was analyzed.Compared with other methods,it provides a new simple and mild route for synthesis of carbon nitride with new morphology.
4.Carbon nanofibers have been prepared through a simple catalytic route using tetrahydrofuran as the solvent and carbon source,Fe and Ni as catalyst,at 500℃. The carbon nanofibers have the average diameter of 100 nm and lengths ranging from hundreds of nanometers to several micrometers.Carbon micro-capsules with morphology of tobacco pipe have been synthesized through a catalytic solvothermal approach using ethanol as the solvent and carbon source,sodium borohydride as catalyst,at 500℃.The as-prepared carbon micro-capsules have the average diameter of 1μm and lengths of over ten micrometers.Due to the simplicity and large-scale synthesis,this work may have an opportunity to be applied in industrial production of one-demention carbon materials.
1、以NaN_3,SiCl_4和Mg粉为原料,在200-350℃温度下于高压釜中合成了结晶良好的α相和β相混合的氮化硅粉体,该反应转化率为54.04%;对上述实验设计了正交实验,得到了合成氮化硅的优化条件;在1 L反应釜中进行了放大实验,反应转化率为50%,表明该方法存在很好的工业应用前景。相关研究工作的成果发表在International journal of applied ceramicstechnology。
2、以廉价的硅铁合金和氯化铵为原料,在600℃合成了α相的氮化硅纳米线束,单根纳米线直径8 nm,长达800 nm,考察了反应温度和反应时间对产物纯度和形貌的影响;以硅粉和铁粉为原料合成了纯度良好,直径为150～500 nm的α-Si_3N_4亚微粒子;以硅粉和铝粉为原料在400-600℃合成了直径为10 nm左右的α相氮化硅纳米线束。由于所用原料均为较廉价的工业产品,该合成方法存在一定的工业应用前景。
3、在400℃下,以三聚氰胺和镁为原料,通过热解反应制备了石墨相氮化碳纳米线束;以纳米线束为前躯体,550℃煅烧后得到长度约为几个微米,管径500-800 nm的六方氮化碳纳米管和氮化碳片状阵列。与其他方法相比,该方法步骤简单、条件温和,得到的氮化碳形貌新颖,为氮化碳材料的制备提供了一条思路。相关研究工作的成果发表在高等学校化学研究
4、以四氢呋喃为反应原料,以铁粉和镍粉为催化剂,通过溶剂热催化方法在500℃一步合成了平均直径为100 nm,长度达10μm以上的纳米碳纤维;以乙醇为原料,以NaBH_4为催化还原剂,在500℃一步合成出具有独特“烟斗状”形貌,直径约1μm,长度达10μm以上的碳胶囊。由于步骤简便和较高的产率,本方法经过进一步研究可以应用于一维碳材料的规模生产。相关研究工作的成果发表在无机化学学报(英文版)
This dissertation concentrates on the synthesis of silicon nitride,carbon nitride and carbon nanostructures through solid phase reaction,solvothermal route at low temperature,thermolysis and solvothermal catalytic methods.As the reactant is very cheap and the reaction condition is mild,these methods are promising in industrial application to some extent.
1.The mixtures ofα- andβ-Si_3N_4 nano-crystalline were prepared in 200-350℃using NAN_3,SiCl_4 and Mg powder as the starting materials.The conversion ratio was 54.04%calculated from the amount of limited reactant NAN_3. Orthogonal strategy was performed to find the optimized reaction condition. Magnified experiments were carried out in a 1000 ml autoclave.The conversion ratio was about 50%which indicated that it was a promising process in industrial application.
2.Starting from ferro-silicone alloy brezee and ammonium chloride,α-Si_3N_4 nanowires bundles have been obtained at 600℃.The nanowires have about 8 nm in diameter,up to 800 nm in length.The influence of reaction time and temperature on the products was investigated.Using silicon and metallic iron,α-Si_3N_4 olivary microparticles with a diameter of about 300～500 nm have been obtained at 650℃.When silicon and metallic aluminium were used to react with ammonium chloride,α-Si_3N_4 nanowire bundles with diameter of about 8 nm can be also obtained at 600℃.Since all of the starting materials used are relatively cheap,the methods will have potential prospect in industrial application.
3.Graphite-like carbon nitride nanowire bundles with diameters of 200-500 nm were synthesized from the solid state thermolysis of melamine at relatively low temperature(400℃).Hexagonal carbon nitride tubes with diameters of 500-800 nm and flake arrays were prepared by heating the nanowire bundles at 550℃in argon atmosphere.The products were characterized in detail and the forming process of tubes and transformation of the molecular structures from s-triazine rings to tri-s-triazine units was analyzed.Compared with other methods,it provides a new simple and mild route for synthesis of carbon nitride with new morphology.
4.Carbon nanofibers have been prepared through a simple catalytic route using tetrahydrofuran as the solvent and carbon source,Fe and Ni as catalyst,at 500℃. The carbon nanofibers have the average diameter of 100 nm and lengths ranging from hundreds of nanometers to several micrometers.Carbon micro-capsules with morphology of tobacco pipe have been synthesized through a catalytic solvothermal approach using ethanol as the solvent and carbon source,sodium borohydride as catalyst,at 500℃.The as-prepared carbon micro-capsules have the average diameter of 1μm and lengths of over ten micrometers.Due to the simplicity and large-scale synthesis,this work may have an opportunity to be applied in industrial production of one-demention carbon materials.
引文
1 R.P.Feynman,Science,1991,254,1300.
2(a)张立德,牟季美,纳米材料和纳米结构,科学出版,2001
(b)王世敏,许祖勋,傅晶,纳米材料制备技术,化学工业出版社,2001.
3(a) C.Suiyanarayana,F.H.Froes,Metall.Trams.,1992,A23,1071
(b) A.D.Yoffe,Advancees in Physics,1993,2,173.
4 A.Henglein,Chem.Rev.,1989,89,1861.
5(a) R.A.Webb,Phys.Rev.Lett.1985,54,2696
(b) H.W.Kroto,Nature,1985,318,162.
6(a) K.J.Klabunde,J.Stark,O.Koper,et al.,J.Phys.Chem.1996,100,12142
(b) A.Henglein,Chem.Rev.1989,89,1861
(c) L.E.Brus,J.Phys.Chem.1986,90,2555.
7 M.L.Steigerwald,L.E.Brus,Ace.Chem.Res.1990,23,183.
8 Y.Wang,J.Chem.Phys.1987,87,7315.
9 R.E.Cavicchi,R.H.Silsbee,Phys.Rew.Lett.1971,26,707.
10 P.Ball,Li Garwin,Nature 1992,355,761.
11 张立德,牟季美,物理1992,21,167.
12 A.J.Legget,S.Chakravarty,et al.,Rev.Mod.Phys.1987,59,1.
13 D.D.Amschalom,M.A.McCord,et al.,Phys.Rev.Lett.1990,65,783.
14 T.Takagahara,Phys.Rev.B 1993,47,4569.
15 K.A.Litau,P.J.Szajowski,A.J.Muller,et al.,J.Phys.Chem.,1993,97,1224.
16 Y.Kanemitsu,Appl.Phys.Lett,1992,18,2187.
17 Y.Masumoto,J.Lumin.,1994,60,256.
18 R.N.Bhargagra,D.Gallagher,Phys.Rev.Lett.1994,15,1234.
19(a) A.I.Ekimov,A.I.L.Efroc,A.A.Onushchenko,Solid State Commun.1985,56,921
(b) R.Roussignool,D.Ricard,Phys.Rev.Lett.1989,62,312.
20(a) X.Ai,H.Fei,Y.Yang,et al.,J Lumin.1994,60,364
(b) Y.Wang,Ace.Chem.Res.1991,24,133.
21 T.Takagahara,Phys.Rev.B 1993,47,4569.
22(a) H.Uchida,Chem.Mater.,1993,5,716
(b) H.Uchida,J.Phys.Chem.1993,96, 1868
23 S.Ohtsuka,Appl.Phys.Lett.1992,25,2953.
24(a) A.Henglein,Topics in Current Chem.1988,143,115
(b) J.K.Leland,J.Phys.Chem.1987,91,5076
(c) M.A.Chamarro,Solid State Commun.1992,10,967
(d)H.Miyoshi,J.Electron.Chem.1990,295,71.
25 H.Zhang,X.Li,S.Li,Y Xin,M.Zhao,Nanostr.Mater.1994,4,285.
26 张池明,化学通报,1993,8,20.
27(a)M.Mark et al.,Catal.Today 1991,8,467
(b)H.F.Schaefer,R.Wurschum,Phys.Lett.1987,119,370
(c)裘式纶,瞿庆洲,肖丰收,张宗涛,化学研究与应用,1998,10,331
(d)S.C.Tsang,Y.K.Chen,P.J.Harris,Nature,1994,372,159.
28(a) A.Henglein,Pure Appl.Chem.1984,56,1215
(b) G.T.Brow,J.R.Daffwent,J.Phys.Chem.1984,88,4995
(c) M.Anpo,T.Shima,S.Kodama et al.,J.Phys.Chem.1987,91,4305
(d)钟子宜,陈立刚,颜其洁等,科学通报,1995,40,1279
(e)王彦妮,张志棍,崔作林,催化学报,1995,16,304.
29(a) Y.Kanetsu,Appl.Phys.Lett.1992,18,2187
(b) Y.Masumoto,J.Lumin.1994,60,256
(e) R.N.Bhargagra,D.Gallagher,Phys.Rev.Lett.1994,15,1234
(d) A.Henglein,Topics in Current Chem.1988,143,115
(e) J.K.Leland,J.Phys.Chem.1987,91,5076
(f) M.A.Chamarro,Solid State Commun.1992,10,967.
30 王宝辉,王德军,崔毅等,高等学校化学学报,1995,16,1610.
31 沈耀春,陆祖宏,韦玉,科学通报,1994,39,2238.
32 G.Hodes,I.D.Howell,L.M.Peter,J.Electrochem.Soc.1992,139,3136.
33(a) A.E.Berkoowitz,J.R.Mitchell,M.J.Carey,Phys.Rev.Lett.1992,68,3745
(b)J.Q.Xiao,J.S.Jiang,C.L.Chien,Phys.Rev.Lett.1992,68,3749.
34(a) Z.H.Mai,Y.F.Lu,W.D.Song,et al.,Appl.Surf.Sci.,2000,154,360.
(b) A.Zaluska,L.Zaluski,J.O.S.Olsen,Appl.Phys.A,2001,72,157.
(c) M.Gratzel,Nature,2001,409,575.
(d) D.J.Beebe,F.S.Maoor,J.M.Bauer,Nature,2000,404,588.
35 E.Garmire,N.M.Jokerst,A.Kost,et al.,J.Opt.Soc.Am.B,1989,6,579.
36 费浩生,韩力等,科学通报,1992,37,1177.
37 吴凤清,徐宝琨等,高等学校化学学报,1994,15,803.
38 Brringer,R.Gleiter,H.Klein,H.P.Marquit,P.Phys.Lett.1984,102A,365.
39(a) J.Kuyama,H.Inui,S.Imaoka,et al.Jpn.J.Appl.Phys.1991,30,L864;
(b) M.S.El-Eskandarany,et al.J.Mater.Res.1992,7,888;
(c) M.S.El-Eskandarany,et al.Appl.Phys.Lett.1992,60,1562;
(d) C.C.Kock,Nanostructured Lett.1993,2,109;
(e) H.Yang,et al.J.Mater.Sci.Lett.1993,17,314;
(f) M.S.El-Eskandarany,et al.J.Mater.Res.1994,9,2891;
(g) G.T.Fei,L.Liu,X.Z.Ding,et al.J.Alloys and Compounds 1995,229,280.
40(a) K.N.Clson,R.L.Cook,J.Am.Ceram.Soc.1959,38,499;
(b) M.R.Guire,et al.J.Mater.Res.1993,8,2327;
(c) J.L.Shi,et al.J.Eur.Ceram.Soc.1993,13,265;
(d)C.W.Lu,J.L.Shi,et al.Thernochimica Acta 1994,232,77;
(e) J.L.Shi,et al.J.Mater.Sci.1995,30,793;
(f) D.Jezequel,et al.J.Mater.Res.1995,10,77.
41 J.A.Switzer,M.L.Shane,R.Phillips,Science1990,247,444.
42 P.Deshev,Mater.Res.Bull.1987,13,1167.
43(a) T.W.Shaw,et al.J.Am.Ceram.Soc.1986,69,979;
(b) H.Gleiter,Prog.Mater.Sci.1990,33,223;
(c) G.Pacheco-Malagon,et al.J.Mater.Res.1995,10,1264;
(d)X.Z.Ding,et al.J.Mater.Sci.Lett.1995,14,21;
(e) X.T.Dong,G.Y.Hong,et al.J.Mater.Sci.Technol.1997,13,113.
44 K.R.Venkatachari,et al.J.Mater.Res.1995,10,248.
45(a) H.Gleiter,Europhysics News 1989,20,130;
(b) Z.L.Cui,et al.Nanostructured Mater.1995,5,829;
(c) R.Birringer,H.Gleiter,et al.Phys.Lett.1984,102A,365.
46(a)高晓云,陈进,王冕等,无机材料学报1992,7,429;
(b)隋同波等,硅酸盐学报1993,21,33;
(c)郭广生等,无机材料学报1993,8,377;
(d)高晓云等,无机材料学报1993,8,57;
(e)蔺思惠,李新勇,郭跃华等,无机材料学报1996,11,157.
47 Webb.R.A.[J].Phys.Rev.Lett.,1985,54:2696.
[1]Komeya K,Matsui M.[M].Germany:Wiley-VCH,1994.
[2]Lee W E,Rainforth M W.[M].London,UK:Chapman & Hall,1994.
[3]Rodr(?)guez-Reinoso F,Narciso J.[J].Adv.Mater.1995,7:209.
[41]Ziegler G,Heinrich J,W(o|¨)tting G.[J].J.Mater.Sci.,1987,22:3041.
[5]K.Komeya and M.Matsui,Materials Science and Technology,Vol.11:Structure and Properties of Ceramics[M],Germany:Wiley-VCH,1994.
[6]Parth(?) E,Gelato L,Chabot B.[M].Si Suppl.B.5c,Berlin:Springer,1991.
[7]Yang P,Fun H K,Rahman I A,Saleh M I.[J].Ceram.Int 1995,21:137.
[8]乐红志,彭达岩,文洪杰.[J].耐火材料,2004,6:435.
[9]郭春丽.[J].陶瓷,2005,12:45.
[10]赵慧,徐征等.[J].太阳能学报,2002,5:142.
[11]叶小琴,许颖,李艳等.[J].北京师范大学学报(自然科学版),2004,40:221.
[12]苗赫濯.[J].中国有色金属学报,2004,14:237.
[13]吴明明,肖俊建.[J].机电产品开发与创新,2004,17:13.
[14]司文捷,李春光,苗赫濯.[J].材料科学与工程学报,2004,22:424.
[15]刘渝珍,石万全,赵玲莉,孙宝银等.[J].2000,21:517.
[16]陈俊芳,吴先球,等.[J].量子电子学报,2005,22:102.
[17]Carborundum Co.US Patent:2,626,828,1953.
[18]张景贤,江东亮等.[J].硅酸盐学报,2000,28:142.
[19]Yi H C,Moore J J.[J].J.Mater.Sci,1990,25:1159.
[20]Chukhlomina L N,Ivanov Y.F,Maksimov Yu M.[J].Inorg.Mater.2005,41:1294.
[21]Alcal(?) M D,Criado J M,Real C.[J].Solid State Ionics,2001,141-142:657.
[22]Alcal(?) M D,Criado J M,Real C.[J].J.Therm.Anal.,1992,38:313.
[23]刘学建,金承钰,张俊计等.[J].无机材料学报,2004,19:379.
[24]Orthner H R,Brink R,Roth P.[J].Int.J.Mater.Prod.Tec.,2000,15:495.
[25]Tang K B,Hu J Q,Lu Q Y,Xie Y,Zhu J S,Qian Y T.[J].Adv Mater,1999,8:653.
[26]Xu F,Zhang X,Wang X,Hong J,Xie Y.[J].Chem Lett,2003,7:600.
[27]Zou G F,Hu B,Xiong K.[J].Appl Phys Lett,2005,86:181901
[28]Luo Y M,Zheng Z M,et al.[J].Mater.Lett.,2004,58:2114.
[29]Seyferth D,Wiseman G H.[J].J.Am.Ceram.Soc.,1984,14:132.
[30]徐世峰,张立功等.[J].发光学报,2005,26:794.
[31]Gu Y L,Chen L Y,Qian Y T.[J].J.Am.Ceram.Soc.,2004,87:1810.
[32]Warner T E,Fray D J.[J].J.Mater.Sci.Lett.,2000,19:733.
[33]Vlasova M V,Lavrenko V A,Dyubova L Y.[J].J.Mater.Syn.Proc.,2001,9:111.
[34]Ortega A,Alcala' M D,Real C,J Mater Pro Tech[J],2008,195:224.
[35]Goto Y,Ohnuma Y.[J].J Mater Res,1998,12:3468.
[36]Bai Y J,Wang C G,Qi Y X,Zhu B,Wang Y X,Liu Y X,Geng G L[J].Scripta.Mater.,2006,54:447.
[37]Bai Y J,Bian J,Wang C G,Zhu B,Qi Y X,Wang Y X,Liu Y X,Geng G L[J].J.Mater.Chem.,2005,15:4832.
[38]Yang L S,Guo C L,Wang L C,Bai Z C,Fu L,Ma X J,Xu L Q,Qian Y T,[J].Chem. Lett,2008,37:302.
[39]C.L.Guo,Z.Xing,X.J.Ma,L.Q.Xu and Y.T.Qian,J.Am.Ceram.Soc,2008,91[5]:1725-8.
[40]J.Robertson and M.J.Powell,Appl.Phys.Lett.,1984,44[4]:415-7.
[41]L.D.Zhang,C.Y.Xia and T.Wang,J.Appl.Phys.,1993,73[10]:5185-8
[42]Finster J,Klinkenberg E D,Heeg J.[J].Vacuum,1990,41:1586.
[43]Taylor J A,Lancaster G M,Innatiev A,Rabalais J W.[J].J.Chem.Phys,1978,68:1776.
[44]Yan Y.L.,Helfand M A,Clayton C R.[J].Appl.Sur.Sci.,1989,37:395.
[45]Larsson C U S,Flodstrom A S,Nyholm R.[J].J.Vac.Sci.Tech.,1987,5:3321.
[1]Cohen M L.[J].Phys Rev B,1985,32:7988.
[2]Liu A Y,Cohen M L.[J].Science,1989,245(4920):841.
[3]Teter D M,Hemley R J.[J].Science,1996,271:53.
[4]Matusmoto S,Xie E Q,Izumi F.[J].Diam.Relat.Mater,1999,8(7):1175.
[5]Liu A Y,Cohen M L.[J].Phys.Rev.,1990,B41:10727.
[6]Corkill J L,Cohen M L.[J].Phys.Rev.B,1993,48(23):17622.
[7]Sjostrom H,Boman M,Stafstrom S,Sundgren J E,Phys.Rev.Lett.,1995,75:1336.
[8]Guo L P,Chen Y,Wang E G,Zhao Z X,Li L.Chem.Phys.Lett.,1997,268:26.
[9]Guo L P,Chen Y,Wang E G,Zhao Z X,Li L,J.Crystal Growth,1997,178:639.
[10]Fujimoto F,Ogata K.[J].Jpn.J Appl.Phys.,1993,32:L420.
[11]Sjostrom H,Stafstrom S,Boman M.[J].Phys.Rev.Lett.,1995,75:1336.
[12]陈光华,吴现成,贺德衍.[J].人工品体学报,2000,29:375.
[13]张永平,顾永松,常香荣.[J].功能材料,2000,31:172.
[14]Wei J,Hing P.[J].Thin Solid Films,2002,410:21.
[15]Khawwam A,JamaA C,Goudmand P.[J].Thin Solid Films,2002,408:15.
[16]Masami Aono,Shoji Nitta.[J].Diam.Relat Mater,2002,11:1219.
[17]Konofaos N,Evangelou E K,Logothetidis.S.[J].J Appl Phys,2002,91:9915.
[18]Robertson J,Reilly E P.[J].Phys.Rev.B,1987,35:2946.
[19]Robertson J.[J].Phys Rev B,1996,53:16302.
[20]Mutsukura N,Akita K.[J].Diam.Relat.Mater.,2000,9:761.
[21]Zhang Z J,Fan S S,Huang J.[J].Appl.Phys.Lett.,1996,68:2639.
[22]李超,曹传宝,吕强.[J].功能材料与器件学报,2004,1:9.
[23]Badding J V,Nesting D C.[J].Chemistry of materials,1996,8(2):536.
[24]Nesting D C,Badding J V.[J].Chemistry of materials,1996,8(7):1535.
[25]Kouvetakis J,Bandari A,Todd M.[J].Chem.Mater.,1994,6:811.
[26]Montigaud H,Tanguy B,Demazeau G.[J].Diam.Relat.Mater.,1999:8:1707.
[27]Zimmerman J L,Williams R,Khabas V.N.[J].Nano Lett.,2001,1:731.
[28]Gillan E G.[J].Chem.Mater.,2000,12:3906.
[29]Zhao Y C,Liu Z,Chu W G.[J].Adv.Mater.,2008,9999:1.
[30]王恩哥,陈岩,郭丽萍.[J].中国科学A辑,1997,27:154.
[31]Zhang Y F,Zhou Z H,Li H L.[J].Appl.Phys.Lett.,1996,68:634.
[32]Stephen Muhl,Adriana Gaona-Couto,Juan Manuel Mendez.[J].Thin Solid Films,1997,228:308.
[33]Chen LC,Yang C Y,Bhusari D M,Chen K H,Lin M C,Lin J C,Chuang T J.[J].Diam.Relat.Mater 1996,5:514.
[34]Bhusari D M,Chert C K,Chen K H,Chuang T J,Chen L C,Lin M C.[J].J.Mater.Res.1997,12:322.
[35]Sung S L,Tsai T G,Huang K P.[J].J Appl Phys,1998,37:148.
[36]Fogarassy E,Szorenyi T,Antoni F,et al.[J].Applied Physics A:Materials Science & Processing,2003,76:15.
[37]Fogarassy E,Szorenyi T,Antoni F.[J].Appl.Surf.Sci.,2002,197:316.
[38]Yu K.M.,Cohen M L,Haller E E,et al.[J].Phys.Rev.B.1994,49:5034.
[39]Kuo C T,Wu J Y.[J].Mater Chen Phys,2001,721:251.
[40]吴大维,付德君,毛先唯.[J].物理学报,1999,48:904.
[41]李超,曹传宝,朱鹤孙.[J].应用化学,2004,21:36.
[42]Fu Q,Cao C B,Li C.[J].J Mater Chem,2003,13:124.
[43]Lv Q,Cao C B,Li C.[J].Chem Phys Lett,2003,372:469.
[44]王金斌,刘秋香,杨国伟.[J].高等学校化学学报,1998:19:1719.
[45]谢二庆,金运范,王志光,等.[J].原子核物理评论,2000,17(3):172.
[46]曹培江,姜志刚,李俊杰,等.[J].吉林大学自然科学学报,2001,:49.
[47]顾永松,潘礼庆,赵学敏.[J].自然科学进展,1997,48:904.
[48]Chen Y,Guo L P,Wang E G.[J].Phil.Mag.Lett.1997,75:155.
[49]Su X W,Song H W,Cui F Z,Li W Z.[J].J.Phys.Condens.Matter,1995,7:L517.
[50]Yoshifumi A,Kojiro O,Kunio S,et al.[J].Thin Solid Films,2001,389:62.
[51]Wang E G,Chen Y,Guo L P.[J].Phys.Scr.T 1997,46:108.
[52]Ronning C,Feldermann H,Merk R,et al.[J].Phys Rev B,1998,58:2207.
[53]Ferrari A C,Rodil S E,Robertson J.[J].Phys Rev,2003,B67:155.
[54]Miller D R,Wang J J,Gillan EG.[J].J.Mater.Chem.2002,12:2463
[55]Komatsu T.[J].J.Mater.Chem.2001,11:799.
[56]Zhang Z,Leinenweber K,Bauer M,et al.[J],J Am Chem Soc,2001,123:7788.
[57]Wang J J,Gillan E G.[J].Thin Solid Films,2002,422:62.
[58]Gu Y L,Chen L Y,Shi L,et al.[J],Carbon,2003,41:2674.
[59]Zimmerman J L,Williams R,Khabashesku V N,et al.[J].Russ.Chem.Bull.2001,50:2020.
[60]Li C,Yang X G,Yang B J,et al.[J].Mater.Chem.Phys.2007,103:427.
[61]Guo Q X,Xie Y,Wang X J,et al.[J].Chem.Comm.,2004,1:26.
[62]Li J,Cao C B,Hao J W,Qiu H L,et al.[J].Diam.Relat.Mater,2006,15:1593.
[63]Lv Q,Cao C B,Zhang J T,Li C,Zhu H S.[J].Appl.Phys.A,2004,79:633.
[64]Wu D W,Fu D J,Guo H X,et al.[J].Phys.Rev.B,1997,56:4949.
[65]Srinivasu P,Vinu A,Hishita S,[J].Microporous and Mesoporous Materials,2008,108:340.
[66]Papadimitriou D,Roupakas G,Dimitriadis C A.[J].J.Appl.Phys.,2002,92:870.
[67]Miller D R,Swenson D C,Gillan E G.[J].J.Am.Chem.Soc,2004,123:5372.
[1]S.Iijima,Nature 354(1991) 56.
[2]Liu J W,Shao M W,Chen X Y,Yu W C,Liu X M,Qian Y T J Am Chem Soc 2003125 8088.
[3]Tang Y H,Wang N,Zhang Y F,Lee C S,Bello I,Lee S T Appl Phys Lett 1999 752921.
[4]Liu J W,Shao M W,Tang Q,Zhang S Y,Qian Y T J Phys Chem B 2003 107 6329.
[5]Liu Y Q,Hu W P,Wang X B,Long C F,Zhang J B,Zhu D B,Tang D S,Xie S S Chem Phys Lett 2000 331 31.
[6]Lee K Y,Katayama M,Honda S,Kuzuoka T,Miyake T,Terao Y,Lee J G,Mori H,Hirao T,Oura K Jpn J Appl Phys 2003 242 L804.
[7]Sato R,Dresselhaus G,Dresselhaus MS.Physical Properties of Carbon Nanotubes,Imperial College Press,Singapore,1998.
[8]Dresselhaus M.S.,Dresselhaus G..J.Electroceram 1997,1(3):273-86.
[9]Koyama T,Endo M.Jpn.J.Appl.Phys.1974,13(7):1933-9.
[10]Koyama T,Endo M.Jpn.J.Appl.Phys.1974,13(7):1175-6.
[11]Poirier E,Chahine R,Bose TK.Int.J.Hydrogen Energy 2001,26(8):831-5.
[12]Fan Y.Y,Liao B,Liu M,et al.Carbon 1999,37(10):1649-51.
[13]Bessette R.R.,Medeiros M.G.,Patrissi C.J.,et al.J.Power Sources 2001,96(1):240-4.
[14]Ando Y,Lijima S.Jpn J Appl Phys[J],1993,32:L107.
[15]Baughman R.H.,Zakhidov A.A.,deHeer W.A.Science[J],2002,297:787.
[16]Ci L.J,Wei J.Q,Wei BQ,et al.Carbon[J],2001,39(3):329-35.
[17]Yoon Y.J,Baik H.K.Diam.Relat.Mater.[J],2001,10(3-7):1214-7.
[18]Chen Y,Guo L.P.,Johnson D.J.,et al.J.Crystal Growth[J],1998,193(3):342-6.
[19]Tang Y.H,Wang N,Zhang YF,et al.Appl.Phys.Lett.[J],1999,75(19):2921-3.
[20]Jiang Y,Wu Y,Zhang SY,et al.J.Am.Chem.Soc.[J],2000,122(49):12383～4
[21]Shao M.W,Li Q,Wu J,et al.Carbon[J],2002,38(40):2961-3.
[22]Ebbesen T W,Ajayan P M.Nature[J],1992,358:220.
[23]Colbert.D.T.Science[J],1994,266:1218.
[24]Ando Y,ZhaoX,OhkohchiM.Carbon[J],1997,35:153.
[25]Zhao X.,Ohkohchi M.,Wang M.,et al.Carbon[J],1997,35:775.
[26]Ando Y.JpnJApplPhys[J],1998,37:L61.
[27]Zhao Y,Liu Y.,Inoue S.,et al.PhysRevLett[J],2004,92:125502.
[28]Lijima S,IchihashiT.Nature[J],1993,363:603.
[29]Bethune D.S.Nature[J],1993,363:605.
[30]Yudasaka M.,Kasuya Y.,Kokai F.,et al.Appl Phys A[J],2002,74:377.
[31]Hutchison J.L.,Kiselev N.A.,Krinichnaya E.P.,et al.Carbon[J],2001,39:761.
[32]Saito Y.,Nakahira T.,Uemura S..JPhysChemB[J],2003,107:931.
[33]Thess A.,Roland L.,Pavel N.,et al.Science[J],1996,273:483.
[34]Bandow S.,Rao A.M.,WilliamsKA,et al.JPhysChemB[J],1997,101:8839.
[35]Chiang I.W.,Brinson B.E.,Huang A.Y.,et al.JPhysChemB[J],2001,105:8297.
[36]Ishii H,Kataura H.,Shiozawa H.,et al.Nature[J],2003,426:540.
[37]Endo M.,J.Phys.Chem.Solids[J],1993,54:1841.
[38]Jose Yacaman M.,Miki,Yoshida M.,Rendon L.,etal.Appl Phys Lett[J],1993,62:657.
[39]Dai H,Rinzler A.G.,Nikolaev P.,et al.ChemPhysLett[J],1996,260:471.
[40]Li W.Z.,Xie S.S.,Qian.L.X.,et al.Science[J],1996,274:1701.
[41]Terrones H.,Kordates.K.,Hsu W.K.,et al.Nature[J],1997,388:52.
[42]Zhang R.,Ramanath G.,AjayanPM.Nature[J],2002,416:495.
[43]Cao A.,Ajayan P.M.,Ramanath G.,et al.Appl Phys Lett[J],2004,84:109.
[44]Wang Y.,Wei F.,LuoGH,et al.Chem Phys Lett[J],2002,364:568.
[45]Bronikowski M.J.,J.VacSciTechnol A[J],2001,19:1800.
[46]Hafner J.H.,CheungCL,LieberCM.Nature[J],1999,398:761.
[47]Kuang M.H,Wang ZL,Bai XD,et al.Appl.Phys.Lett.2000;76(10):1255-7.
[48]Oberlin A,Endo M,Koyama T.J.Cryst.Growth,1976;32(2),335-49.
[49]Dresselhaus M S,Dresselhaus G,Pimenta M A,Eklund P C In:Pelletier MJ editor Analytical applications of Raman spectroscopy Oxford:Blackwell Science,1999 Chapter 9
2(a)张立德,牟季美,纳米材料和纳米结构,科学出版,2001
(b)王世敏,许祖勋,傅晶,纳米材料制备技术,化学工业出版社,2001.
3(a) C.Suiyanarayana,F.H.Froes,Metall.Trams.,1992,A23,1071
(b) A.D.Yoffe,Advancees in Physics,1993,2,173.
4 A.Henglein,Chem.Rev.,1989,89,1861.
5(a) R.A.Webb,Phys.Rev.Lett.1985,54,2696
(b) H.W.Kroto,Nature,1985,318,162.
6(a) K.J.Klabunde,J.Stark,O.Koper,et al.,J.Phys.Chem.1996,100,12142
(b) A.Henglein,Chem.Rev.1989,89,1861
(c) L.E.Brus,J.Phys.Chem.1986,90,2555.
7 M.L.Steigerwald,L.E.Brus,Ace.Chem.Res.1990,23,183.
8 Y.Wang,J.Chem.Phys.1987,87,7315.
9 R.E.Cavicchi,R.H.Silsbee,Phys.Rew.Lett.1971,26,707.
10 P.Ball,Li Garwin,Nature 1992,355,761.
11 张立德,牟季美,物理1992,21,167.
12 A.J.Legget,S.Chakravarty,et al.,Rev.Mod.Phys.1987,59,1.
13 D.D.Amschalom,M.A.McCord,et al.,Phys.Rev.Lett.1990,65,783.
14 T.Takagahara,Phys.Rev.B 1993,47,4569.
15 K.A.Litau,P.J.Szajowski,A.J.Muller,et al.,J.Phys.Chem.,1993,97,1224.
16 Y.Kanemitsu,Appl.Phys.Lett,1992,18,2187.
17 Y.Masumoto,J.Lumin.,1994,60,256.
18 R.N.Bhargagra,D.Gallagher,Phys.Rev.Lett.1994,15,1234.
19(a) A.I.Ekimov,A.I.L.Efroc,A.A.Onushchenko,Solid State Commun.1985,56,921
(b) R.Roussignool,D.Ricard,Phys.Rev.Lett.1989,62,312.
20(a) X.Ai,H.Fei,Y.Yang,et al.,J Lumin.1994,60,364
(b) Y.Wang,Ace.Chem.Res.1991,24,133.
21 T.Takagahara,Phys.Rev.B 1993,47,4569.
22(a) H.Uchida,Chem.Mater.,1993,5,716
(b) H.Uchida,J.Phys.Chem.1993,96, 1868
23 S.Ohtsuka,Appl.Phys.Lett.1992,25,2953.
24(a) A.Henglein,Topics in Current Chem.1988,143,115
(b) J.K.Leland,J.Phys.Chem.1987,91,5076
(c) M.A.Chamarro,Solid State Commun.1992,10,967
(d)H.Miyoshi,J.Electron.Chem.1990,295,71.
25 H.Zhang,X.Li,S.Li,Y Xin,M.Zhao,Nanostr.Mater.1994,4,285.
26 张池明,化学通报,1993,8,20.
27(a)M.Mark et al.,Catal.Today 1991,8,467
(b)H.F.Schaefer,R.Wurschum,Phys.Lett.1987,119,370
(c)裘式纶,瞿庆洲,肖丰收,张宗涛,化学研究与应用,1998,10,331
(d)S.C.Tsang,Y.K.Chen,P.J.Harris,Nature,1994,372,159.
28(a) A.Henglein,Pure Appl.Chem.1984,56,1215
(b) G.T.Brow,J.R.Daffwent,J.Phys.Chem.1984,88,4995
(c) M.Anpo,T.Shima,S.Kodama et al.,J.Phys.Chem.1987,91,4305
(d)钟子宜,陈立刚,颜其洁等,科学通报,1995,40,1279
(e)王彦妮,张志棍,崔作林,催化学报,1995,16,304.
29(a) Y.Kanetsu,Appl.Phys.Lett.1992,18,2187
(b) Y.Masumoto,J.Lumin.1994,60,256
(e) R.N.Bhargagra,D.Gallagher,Phys.Rev.Lett.1994,15,1234
(d) A.Henglein,Topics in Current Chem.1988,143,115
(e) J.K.Leland,J.Phys.Chem.1987,91,5076
(f) M.A.Chamarro,Solid State Commun.1992,10,967.
30 王宝辉,王德军,崔毅等,高等学校化学学报,1995,16,1610.
31 沈耀春,陆祖宏,韦玉,科学通报,1994,39,2238.
32 G.Hodes,I.D.Howell,L.M.Peter,J.Electrochem.Soc.1992,139,3136.
33(a) A.E.Berkoowitz,J.R.Mitchell,M.J.Carey,Phys.Rev.Lett.1992,68,3745
(b)J.Q.Xiao,J.S.Jiang,C.L.Chien,Phys.Rev.Lett.1992,68,3749.
34(a) Z.H.Mai,Y.F.Lu,W.D.Song,et al.,Appl.Surf.Sci.,2000,154,360.
(b) A.Zaluska,L.Zaluski,J.O.S.Olsen,Appl.Phys.A,2001,72,157.
(c) M.Gratzel,Nature,2001,409,575.
(d) D.J.Beebe,F.S.Maoor,J.M.Bauer,Nature,2000,404,588.
35 E.Garmire,N.M.Jokerst,A.Kost,et al.,J.Opt.Soc.Am.B,1989,6,579.
36 费浩生,韩力等,科学通报,1992,37,1177.
37 吴凤清,徐宝琨等,高等学校化学学报,1994,15,803.
38 Brringer,R.Gleiter,H.Klein,H.P.Marquit,P.Phys.Lett.1984,102A,365.
39(a) J.Kuyama,H.Inui,S.Imaoka,et al.Jpn.J.Appl.Phys.1991,30,L864;
(b) M.S.El-Eskandarany,et al.J.Mater.Res.1992,7,888;
(c) M.S.El-Eskandarany,et al.Appl.Phys.Lett.1992,60,1562;
(d) C.C.Kock,Nanostructured Lett.1993,2,109;
(e) H.Yang,et al.J.Mater.Sci.Lett.1993,17,314;
(f) M.S.El-Eskandarany,et al.J.Mater.Res.1994,9,2891;
(g) G.T.Fei,L.Liu,X.Z.Ding,et al.J.Alloys and Compounds 1995,229,280.
40(a) K.N.Clson,R.L.Cook,J.Am.Ceram.Soc.1959,38,499;
(b) M.R.Guire,et al.J.Mater.Res.1993,8,2327;
(c) J.L.Shi,et al.J.Eur.Ceram.Soc.1993,13,265;
(d)C.W.Lu,J.L.Shi,et al.Thernochimica Acta 1994,232,77;
(e) J.L.Shi,et al.J.Mater.Sci.1995,30,793;
(f) D.Jezequel,et al.J.Mater.Res.1995,10,77.
41 J.A.Switzer,M.L.Shane,R.Phillips,Science1990,247,444.
42 P.Deshev,Mater.Res.Bull.1987,13,1167.
43(a) T.W.Shaw,et al.J.Am.Ceram.Soc.1986,69,979;
(b) H.Gleiter,Prog.Mater.Sci.1990,33,223;
(c) G.Pacheco-Malagon,et al.J.Mater.Res.1995,10,1264;
(d)X.Z.Ding,et al.J.Mater.Sci.Lett.1995,14,21;
(e) X.T.Dong,G.Y.Hong,et al.J.Mater.Sci.Technol.1997,13,113.
44 K.R.Venkatachari,et al.J.Mater.Res.1995,10,248.
45(a) H.Gleiter,Europhysics News 1989,20,130;
(b) Z.L.Cui,et al.Nanostructured Mater.1995,5,829;
(c) R.Birringer,H.Gleiter,et al.Phys.Lett.1984,102A,365.
46(a)高晓云,陈进,王冕等,无机材料学报1992,7,429;
(b)隋同波等,硅酸盐学报1993,21,33;
(c)郭广生等,无机材料学报1993,8,377;
(d)高晓云等,无机材料学报1993,8,57;
(e)蔺思惠,李新勇,郭跃华等,无机材料学报1996,11,157.
47 Webb.R.A.[J].Phys.Rev.Lett.,1985,54:2696.
[1]Komeya K,Matsui M.[M].Germany:Wiley-VCH,1994.
[2]Lee W E,Rainforth M W.[M].London,UK:Chapman & Hall,1994.
[3]Rodr(?)guez-Reinoso F,Narciso J.[J].Adv.Mater.1995,7:209.
[41]Ziegler G,Heinrich J,W(o|¨)tting G.[J].J.Mater.Sci.,1987,22:3041.
[5]K.Komeya and M.Matsui,Materials Science and Technology,Vol.11:Structure and Properties of Ceramics[M],Germany:Wiley-VCH,1994.
[6]Parth(?) E,Gelato L,Chabot B.[M].Si Suppl.B.5c,Berlin:Springer,1991.
[7]Yang P,Fun H K,Rahman I A,Saleh M I.[J].Ceram.Int 1995,21:137.
[8]乐红志,彭达岩,文洪杰.[J].耐火材料,2004,6:435.
[9]郭春丽.[J].陶瓷,2005,12:45.
[10]赵慧,徐征等.[J].太阳能学报,2002,5:142.
[11]叶小琴,许颖,李艳等.[J].北京师范大学学报(自然科学版),2004,40:221.
[12]苗赫濯.[J].中国有色金属学报,2004,14:237.
[13]吴明明,肖俊建.[J].机电产品开发与创新,2004,17:13.
[14]司文捷,李春光,苗赫濯.[J].材料科学与工程学报,2004,22:424.
[15]刘渝珍,石万全,赵玲莉,孙宝银等.[J].2000,21:517.
[16]陈俊芳,吴先球,等.[J].量子电子学报,2005,22:102.
[17]Carborundum Co.US Patent:2,626,828,1953.
[18]张景贤,江东亮等.[J].硅酸盐学报,2000,28:142.
[19]Yi H C,Moore J J.[J].J.Mater.Sci,1990,25:1159.
[20]Chukhlomina L N,Ivanov Y.F,Maksimov Yu M.[J].Inorg.Mater.2005,41:1294.
[21]Alcal(?) M D,Criado J M,Real C.[J].Solid State Ionics,2001,141-142:657.
[22]Alcal(?) M D,Criado J M,Real C.[J].J.Therm.Anal.,1992,38:313.
[23]刘学建,金承钰,张俊计等.[J].无机材料学报,2004,19:379.
[24]Orthner H R,Brink R,Roth P.[J].Int.J.Mater.Prod.Tec.,2000,15:495.
[25]Tang K B,Hu J Q,Lu Q Y,Xie Y,Zhu J S,Qian Y T.[J].Adv Mater,1999,8:653.
[26]Xu F,Zhang X,Wang X,Hong J,Xie Y.[J].Chem Lett,2003,7:600.
[27]Zou G F,Hu B,Xiong K.[J].Appl Phys Lett,2005,86:181901
[28]Luo Y M,Zheng Z M,et al.[J].Mater.Lett.,2004,58:2114.
[29]Seyferth D,Wiseman G H.[J].J.Am.Ceram.Soc.,1984,14:132.
[30]徐世峰,张立功等.[J].发光学报,2005,26:794.
[31]Gu Y L,Chen L Y,Qian Y T.[J].J.Am.Ceram.Soc.,2004,87:1810.
[32]Warner T E,Fray D J.[J].J.Mater.Sci.Lett.,2000,19:733.
[33]Vlasova M V,Lavrenko V A,Dyubova L Y.[J].J.Mater.Syn.Proc.,2001,9:111.
[34]Ortega A,Alcala' M D,Real C,J Mater Pro Tech[J],2008,195:224.
[35]Goto Y,Ohnuma Y.[J].J Mater Res,1998,12:3468.
[36]Bai Y J,Wang C G,Qi Y X,Zhu B,Wang Y X,Liu Y X,Geng G L[J].Scripta.Mater.,2006,54:447.
[37]Bai Y J,Bian J,Wang C G,Zhu B,Qi Y X,Wang Y X,Liu Y X,Geng G L[J].J.Mater.Chem.,2005,15:4832.
[38]Yang L S,Guo C L,Wang L C,Bai Z C,Fu L,Ma X J,Xu L Q,Qian Y T,[J].Chem. Lett,2008,37:302.
[39]C.L.Guo,Z.Xing,X.J.Ma,L.Q.Xu and Y.T.Qian,J.Am.Ceram.Soc,2008,91[5]:1725-8.
[40]J.Robertson and M.J.Powell,Appl.Phys.Lett.,1984,44[4]:415-7.
[41]L.D.Zhang,C.Y.Xia and T.Wang,J.Appl.Phys.,1993,73[10]:5185-8
[42]Finster J,Klinkenberg E D,Heeg J.[J].Vacuum,1990,41:1586.
[43]Taylor J A,Lancaster G M,Innatiev A,Rabalais J W.[J].J.Chem.Phys,1978,68:1776.
[44]Yan Y.L.,Helfand M A,Clayton C R.[J].Appl.Sur.Sci.,1989,37:395.
[45]Larsson C U S,Flodstrom A S,Nyholm R.[J].J.Vac.Sci.Tech.,1987,5:3321.
[1]Cohen M L.[J].Phys Rev B,1985,32:7988.
[2]Liu A Y,Cohen M L.[J].Science,1989,245(4920):841.
[3]Teter D M,Hemley R J.[J].Science,1996,271:53.
[4]Matusmoto S,Xie E Q,Izumi F.[J].Diam.Relat.Mater,1999,8(7):1175.
[5]Liu A Y,Cohen M L.[J].Phys.Rev.,1990,B41:10727.
[6]Corkill J L,Cohen M L.[J].Phys.Rev.B,1993,48(23):17622.
[7]Sjostrom H,Boman M,Stafstrom S,Sundgren J E,Phys.Rev.Lett.,1995,75:1336.
[8]Guo L P,Chen Y,Wang E G,Zhao Z X,Li L.Chem.Phys.Lett.,1997,268:26.
[9]Guo L P,Chen Y,Wang E G,Zhao Z X,Li L,J.Crystal Growth,1997,178:639.
[10]Fujimoto F,Ogata K.[J].Jpn.J Appl.Phys.,1993,32:L420.
[11]Sjostrom H,Stafstrom S,Boman M.[J].Phys.Rev.Lett.,1995,75:1336.
[12]陈光华,吴现成,贺德衍.[J].人工品体学报,2000,29:375.
[13]张永平,顾永松,常香荣.[J].功能材料,2000,31:172.
[14]Wei J,Hing P.[J].Thin Solid Films,2002,410:21.
[15]Khawwam A,JamaA C,Goudmand P.[J].Thin Solid Films,2002,408:15.
[16]Masami Aono,Shoji Nitta.[J].Diam.Relat Mater,2002,11:1219.
[17]Konofaos N,Evangelou E K,Logothetidis.S.[J].J Appl Phys,2002,91:9915.
[18]Robertson J,Reilly E P.[J].Phys.Rev.B,1987,35:2946.
[19]Robertson J.[J].Phys Rev B,1996,53:16302.
[20]Mutsukura N,Akita K.[J].Diam.Relat.Mater.,2000,9:761.
[21]Zhang Z J,Fan S S,Huang J.[J].Appl.Phys.Lett.,1996,68:2639.
[22]李超,曹传宝,吕强.[J].功能材料与器件学报,2004,1:9.
[23]Badding J V,Nesting D C.[J].Chemistry of materials,1996,8(2):536.
[24]Nesting D C,Badding J V.[J].Chemistry of materials,1996,8(7):1535.
[25]Kouvetakis J,Bandari A,Todd M.[J].Chem.Mater.,1994,6:811.
[26]Montigaud H,Tanguy B,Demazeau G.[J].Diam.Relat.Mater.,1999:8:1707.
[27]Zimmerman J L,Williams R,Khabas V.N.[J].Nano Lett.,2001,1:731.
[28]Gillan E G.[J].Chem.Mater.,2000,12:3906.
[29]Zhao Y C,Liu Z,Chu W G.[J].Adv.Mater.,2008,9999:1.
[30]王恩哥,陈岩,郭丽萍.[J].中国科学A辑,1997,27:154.
[31]Zhang Y F,Zhou Z H,Li H L.[J].Appl.Phys.Lett.,1996,68:634.
[32]Stephen Muhl,Adriana Gaona-Couto,Juan Manuel Mendez.[J].Thin Solid Films,1997,228:308.
[33]Chen LC,Yang C Y,Bhusari D M,Chen K H,Lin M C,Lin J C,Chuang T J.[J].Diam.Relat.Mater 1996,5:514.
[34]Bhusari D M,Chert C K,Chen K H,Chuang T J,Chen L C,Lin M C.[J].J.Mater.Res.1997,12:322.
[35]Sung S L,Tsai T G,Huang K P.[J].J Appl Phys,1998,37:148.
[36]Fogarassy E,Szorenyi T,Antoni F,et al.[J].Applied Physics A:Materials Science & Processing,2003,76:15.
[37]Fogarassy E,Szorenyi T,Antoni F.[J].Appl.Surf.Sci.,2002,197:316.
[38]Yu K.M.,Cohen M L,Haller E E,et al.[J].Phys.Rev.B.1994,49:5034.
[39]Kuo C T,Wu J Y.[J].Mater Chen Phys,2001,721:251.
[40]吴大维,付德君,毛先唯.[J].物理学报,1999,48:904.
[41]李超,曹传宝,朱鹤孙.[J].应用化学,2004,21:36.
[42]Fu Q,Cao C B,Li C.[J].J Mater Chem,2003,13:124.
[43]Lv Q,Cao C B,Li C.[J].Chem Phys Lett,2003,372:469.
[44]王金斌,刘秋香,杨国伟.[J].高等学校化学学报,1998:19:1719.
[45]谢二庆,金运范,王志光,等.[J].原子核物理评论,2000,17(3):172.
[46]曹培江,姜志刚,李俊杰,等.[J].吉林大学自然科学学报,2001,:49.
[47]顾永松,潘礼庆,赵学敏.[J].自然科学进展,1997,48:904.
[48]Chen Y,Guo L P,Wang E G.[J].Phil.Mag.Lett.1997,75:155.
[49]Su X W,Song H W,Cui F Z,Li W Z.[J].J.Phys.Condens.Matter,1995,7:L517.
[50]Yoshifumi A,Kojiro O,Kunio S,et al.[J].Thin Solid Films,2001,389:62.
[51]Wang E G,Chen Y,Guo L P.[J].Phys.Scr.T 1997,46:108.
[52]Ronning C,Feldermann H,Merk R,et al.[J].Phys Rev B,1998,58:2207.
[53]Ferrari A C,Rodil S E,Robertson J.[J].Phys Rev,2003,B67:155.
[54]Miller D R,Wang J J,Gillan EG.[J].J.Mater.Chem.2002,12:2463
[55]Komatsu T.[J].J.Mater.Chem.2001,11:799.
[56]Zhang Z,Leinenweber K,Bauer M,et al.[J],J Am Chem Soc,2001,123:7788.
[57]Wang J J,Gillan E G.[J].Thin Solid Films,2002,422:62.
[58]Gu Y L,Chen L Y,Shi L,et al.[J],Carbon,2003,41:2674.
[59]Zimmerman J L,Williams R,Khabashesku V N,et al.[J].Russ.Chem.Bull.2001,50:2020.
[60]Li C,Yang X G,Yang B J,et al.[J].Mater.Chem.Phys.2007,103:427.
[61]Guo Q X,Xie Y,Wang X J,et al.[J].Chem.Comm.,2004,1:26.
[62]Li J,Cao C B,Hao J W,Qiu H L,et al.[J].Diam.Relat.Mater,2006,15:1593.
[63]Lv Q,Cao C B,Zhang J T,Li C,Zhu H S.[J].Appl.Phys.A,2004,79:633.
[64]Wu D W,Fu D J,Guo H X,et al.[J].Phys.Rev.B,1997,56:4949.
[65]Srinivasu P,Vinu A,Hishita S,[J].Microporous and Mesoporous Materials,2008,108:340.
[66]Papadimitriou D,Roupakas G,Dimitriadis C A.[J].J.Appl.Phys.,2002,92:870.
[67]Miller D R,Swenson D C,Gillan E G.[J].J.Am.Chem.Soc,2004,123:5372.
[1]S.Iijima,Nature 354(1991) 56.
[2]Liu J W,Shao M W,Chen X Y,Yu W C,Liu X M,Qian Y T J Am Chem Soc 2003125 8088.
[3]Tang Y H,Wang N,Zhang Y F,Lee C S,Bello I,Lee S T Appl Phys Lett 1999 752921.
[4]Liu J W,Shao M W,Tang Q,Zhang S Y,Qian Y T J Phys Chem B 2003 107 6329.
[5]Liu Y Q,Hu W P,Wang X B,Long C F,Zhang J B,Zhu D B,Tang D S,Xie S S Chem Phys Lett 2000 331 31.
[6]Lee K Y,Katayama M,Honda S,Kuzuoka T,Miyake T,Terao Y,Lee J G,Mori H,Hirao T,Oura K Jpn J Appl Phys 2003 242 L804.
[7]Sato R,Dresselhaus G,Dresselhaus MS.Physical Properties of Carbon Nanotubes,Imperial College Press,Singapore,1998.
[8]Dresselhaus M.S.,Dresselhaus G..J.Electroceram 1997,1(3):273-86.
[9]Koyama T,Endo M.Jpn.J.Appl.Phys.1974,13(7):1933-9.
[10]Koyama T,Endo M.Jpn.J.Appl.Phys.1974,13(7):1175-6.
[11]Poirier E,Chahine R,Bose TK.Int.J.Hydrogen Energy 2001,26(8):831-5.
[12]Fan Y.Y,Liao B,Liu M,et al.Carbon 1999,37(10):1649-51.
[13]Bessette R.R.,Medeiros M.G.,Patrissi C.J.,et al.J.Power Sources 2001,96(1):240-4.
[14]Ando Y,Lijima S.Jpn J Appl Phys[J],1993,32:L107.
[15]Baughman R.H.,Zakhidov A.A.,deHeer W.A.Science[J],2002,297:787.
[16]Ci L.J,Wei J.Q,Wei BQ,et al.Carbon[J],2001,39(3):329-35.
[17]Yoon Y.J,Baik H.K.Diam.Relat.Mater.[J],2001,10(3-7):1214-7.
[18]Chen Y,Guo L.P.,Johnson D.J.,et al.J.Crystal Growth[J],1998,193(3):342-6.
[19]Tang Y.H,Wang N,Zhang YF,et al.Appl.Phys.Lett.[J],1999,75(19):2921-3.
[20]Jiang Y,Wu Y,Zhang SY,et al.J.Am.Chem.Soc.[J],2000,122(49):12383～4
[21]Shao M.W,Li Q,Wu J,et al.Carbon[J],2002,38(40):2961-3.
[22]Ebbesen T W,Ajayan P M.Nature[J],1992,358:220.
[23]Colbert.D.T.Science[J],1994,266:1218.
[24]Ando Y,ZhaoX,OhkohchiM.Carbon[J],1997,35:153.
[25]Zhao X.,Ohkohchi M.,Wang M.,et al.Carbon[J],1997,35:775.
[26]Ando Y.JpnJApplPhys[J],1998,37:L61.
[27]Zhao Y,Liu Y.,Inoue S.,et al.PhysRevLett[J],2004,92:125502.
[28]Lijima S,IchihashiT.Nature[J],1993,363:603.
[29]Bethune D.S.Nature[J],1993,363:605.
[30]Yudasaka M.,Kasuya Y.,Kokai F.,et al.Appl Phys A[J],2002,74:377.
[31]Hutchison J.L.,Kiselev N.A.,Krinichnaya E.P.,et al.Carbon[J],2001,39:761.
[32]Saito Y.,Nakahira T.,Uemura S..JPhysChemB[J],2003,107:931.
[33]Thess A.,Roland L.,Pavel N.,et al.Science[J],1996,273:483.
[34]Bandow S.,Rao A.M.,WilliamsKA,et al.JPhysChemB[J],1997,101:8839.
[35]Chiang I.W.,Brinson B.E.,Huang A.Y.,et al.JPhysChemB[J],2001,105:8297.
[36]Ishii H,Kataura H.,Shiozawa H.,et al.Nature[J],2003,426:540.
[37]Endo M.,J.Phys.Chem.Solids[J],1993,54:1841.
[38]Jose Yacaman M.,Miki,Yoshida M.,Rendon L.,etal.Appl Phys Lett[J],1993,62:657.
[39]Dai H,Rinzler A.G.,Nikolaev P.,et al.ChemPhysLett[J],1996,260:471.
[40]Li W.Z.,Xie S.S.,Qian.L.X.,et al.Science[J],1996,274:1701.
[41]Terrones H.,Kordates.K.,Hsu W.K.,et al.Nature[J],1997,388:52.
[42]Zhang R.,Ramanath G.,AjayanPM.Nature[J],2002,416:495.
[43]Cao A.,Ajayan P.M.,Ramanath G.,et al.Appl Phys Lett[J],2004,84:109.
[44]Wang Y.,Wei F.,LuoGH,et al.Chem Phys Lett[J],2002,364:568.
[45]Bronikowski M.J.,J.VacSciTechnol A[J],2001,19:1800.
[46]Hafner J.H.,CheungCL,LieberCM.Nature[J],1999,398:761.
[47]Kuang M.H,Wang ZL,Bai XD,et al.Appl.Phys.Lett.2000;76(10):1255-7.
[48]Oberlin A,Endo M,Koyama T.J.Cryst.Growth,1976;32(2),335-49.
[49]Dresselhaus M S,Dresselhaus G,Pimenta M A,Eklund P C In:Pelletier MJ editor Analytical applications of Raman spectroscopy Oxford:Blackwell Science,1999 Chapter 9
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |