5.8GHz RFID系统中介质振荡器的设计
|
摘要
射频识别(Radio Frequency Identification, RFID)是一种利用射频信号自动识别目标对象并获取相关信息的技术。RFID系统所具有的非接触性优点使其在当前常用的自动识别系统中占据主导地位。在RFID系统应用中,它的本振源必须具有低相位噪声来满足数字调制方案和误码率(Bit Error Rate, BER)的要求。介质振荡器(Dielectric Resonator Oscillator, DRO)毙够满足这一要求,同时DRO还具有温度的变化会引起最小的频率漂移来保证接收机被锁定在目的信道和提供高的输出功率来直接驱动混频器工作。
本论文采用砷化镓场效应管对5.8GHz DRO进行设计。在对DRO的四种基本电路结构分析基础上,我们选择串联反馈型DRO电路结构。DRO有着优异的性能,关键在于介质谐振器(Dielectric Resonator, DR)的高Q值谐振回路和可以对振荡频率进行锁定。我们对DR建模的两种方法进行了仿真。为了使砷化镓场效应管具有建立振荡所需的负阻,我们将其配置为共源结构并在漏极添加合适的开路微带线。场效应管是否具有足够的负阻,是通过测试其S参数来获知的。S参数分析法在DRO的设计中具有十分重要的作用。
本课题从开始研究至今,经历反复的仿真实验,成功解决了DRO要求的高性能指标和达到在所要求的频率点振荡的问题。
Radio Frequency Identification (RFID), is a generic term for the technology using radio waves to automatically identify individual iter and collect associated information. RFID system has become the dominant in the current automatically identify systems for its advantage of non-contact. In a RFID system application, its local oscillator must have low phase noise in order to meet the digital modulation scheme and Bit Error Rate (BER) requirement. Dielectric Resonator Oscillator (DRO) can meet this requirement and the DRO also has the minimal frequency drift over temperature to keep the receiver locked into the selected channel and provide enough output power to directly drive the mixer. This thesis demonstrates a DRO design at 5.8GHz with one GaAs FET. Upon reviewing four kinds of the basic DRO topologies, we choose the series feedback DRO. The Dielectric Resonator (DR) is key to the performance of the DRO in that it defines the high Q of the resonator circuit and locks the oscillator frequency. We use two methods to simulate DR model. In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line. To know the FET whether have the enough negative resonator, we should test its S parameters. Using the method of S parameters analysis plays a very important role in the DRO design.
Since the project was established, this method has been continuously experimented through simulation, successfully solving the difficult problem of high-performance targets and achieving the requirement in the frequency point oscillation to the DRO.
本论文采用砷化镓场效应管对5.8GHz DRO进行设计。在对DRO的四种基本电路结构分析基础上,我们选择串联反馈型DRO电路结构。DRO有着优异的性能,关键在于介质谐振器(Dielectric Resonator, DR)的高Q值谐振回路和可以对振荡频率进行锁定。我们对DR建模的两种方法进行了仿真。为了使砷化镓场效应管具有建立振荡所需的负阻,我们将其配置为共源结构并在漏极添加合适的开路微带线。场效应管是否具有足够的负阻,是通过测试其S参数来获知的。S参数分析法在DRO的设计中具有十分重要的作用。
本课题从开始研究至今,经历反复的仿真实验,成功解决了DRO要求的高性能指标和达到在所要求的频率点振荡的问题。
Radio Frequency Identification (RFID), is a generic term for the technology using radio waves to automatically identify individual iter and collect associated information. RFID system has become the dominant in the current automatically identify systems for its advantage of non-contact. In a RFID system application, its local oscillator must have low phase noise in order to meet the digital modulation scheme and Bit Error Rate (BER) requirement. Dielectric Resonator Oscillator (DRO) can meet this requirement and the DRO also has the minimal frequency drift over temperature to keep the receiver locked into the selected channel and provide enough output power to directly drive the mixer. This thesis demonstrates a DRO design at 5.8GHz with one GaAs FET. Upon reviewing four kinds of the basic DRO topologies, we choose the series feedback DRO. The Dielectric Resonator (DR) is key to the performance of the DRO in that it defines the high Q of the resonator circuit and locks the oscillator frequency. We use two methods to simulate DR model. In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line. To know the FET whether have the enough negative resonator, we should test its S parameters. Using the method of S parameters analysis plays a very important role in the DRO design.
Since the project was established, this method has been continuously experimented through simulation, successfully solving the difficult problem of high-performance targets and achieving the requirement in the frequency point oscillation to the DRO.
引文
[1]黎飞鸿.远距离高频段RFID读写器系统研究与设计实现[D]华东师范大学,2007.
[2]陈冬萍.射频识别技术(RFID)应用研究[D].华东师范大学,2006.
[3]彭友斌,邓毅华.2.45GHz RFID阅读器的设计与实现[J].微计算机信息,2007,7(11):104～108.
[4]张华；魏臻.无线射频识别技术RFID及其应用[J].计算机安全,2008,20(6):74-77.
[5]胡小华.基于RFID的电子不停车收费系统研究[D].北方工业大学,2008.
[6]杨会彩,樊延虎.RFID技术及其在ETC系统中的应用[J].现代电子技术,2008,15(10):63～65.
[7]白洁、高速公路不停车收费系统的研制[D].郑州大学,2006.
[8]潘勇.高速公路联网电子不停车收费系统安全体系的设计与实现[D].上海交通大学,2007.
[9]高永森,唐宗熙.X频段介质谐振振荡器的设计[J].电讯技术,2008,03(11):164～167
[10]宋红江,尹哲.Ku频段低相噪锁相介质振荡器[J].半导体技术,2008,07(9):156～158.
[11]曲燕霞,唐宗熙.C频段介质稳频振荡器的设计[J].电讯技参,2007,04(7):14～16.
[12]李英.电磁介质谐振器理论与应用[M].北京:电子工业出版社,1988.
[13]梁建刚,王海平.传输型耦合介质振荡器的计算机辅助设计[J].现代电子技术,2007,21(8):135～138.
[14]冯恩信.电磁场与电磁波[M].西安:西安交通大学出版社,2006.
[15]毕岗.电磁场与微波[M].杭州：浙江大学出版社,2006.
[16]I.Bahl.微波固态电路设计[M].北京：电子工业出版社, 2006.
[17]顾茂章,张克潜.微波技术[M]北京：清华大学出版社,1989.
[18]沈致远.微波技术[M].北京:国防工业出版社,1980.
[19]周清一.高稳定度锁相介质振荡器的研究与设计微波测量技术[M].北京：国防工业出版社,1964.
[20]廖承恩.微波技术基础[M].北京:国防工业出版社,1979.
[21]汤世贤.微波技术测量[M].北京:国防工业出版社,1979.
[22]刘学观,郭辉萍.微波技术与天线[M].西安:西安电子科技大学出版社,2006.
[23]任伟,赵家升.电磁场与微波技术[M].北京:电子工业出版社,2005.
[24]D. M. Pozar.微波工程[M].北京：电子工业出版社,2006.
[25]王晓岚.高速公路不停车收费系统的研制[D],西安电子科技大学,2007.
[26]陈永康.高稳定度锁相介质振荡器微波源的设计[D].武汉大学,2007.
[27]葛建民.低相噪介质稳频振荡器的设计[J].安徽大学学报(自然科学版),2006,21(6):233～235.
[28]J. Everard. Fundamentals of RF circuit design with low noise oscillator [M]. New York: Wiley,2002.
[29]F. Gao, Z. Zhou, M. Feng, M. Scharen, A. Cardona, and R. Forse. Hysteresis effect in microwave power transmission of high temperature superconducting coplanar transmission lines [J]. Appl. Phys. Lett,1995,67(9):2229-2232.
[30]I. J. Bahl and P. Bhartia. Microstrip Antennas [M]. Dedham MA:Aretch House,1980.
[31]逯贵祯.射频电路的分析和设计[M].北京：北京广播学院出版社,2002.
[32]廖娟.低相噪介质振荡的设计理论与实践[D].电子科技大学,2004.
[33]B. S. Virdec. Current techniques for tuning dielectric resonators [J]. Microwave Journal, 1998,34(7):130～138.
[34]F. Gao, M. V. Klein, J. Kruse, and M. Feng. Mode Coupling in Superconducting Parallel Plate Resonator in a Cavity with Outer Conductive Enclosure [J]. IEEE Transaction on Microwave Theory and Techniques,1996,44(11):6-10.
[35]T. Shen, K. A. Zaki, C. Wang, and J. Deriso. Tunable dielectric resonators with dielectric tuning disks in cylindrical enclosures [J]. Microwave Theory,2000,28(3):1441～1444.
[36]G. Molin and J. Repei. A study on the optical control of dielectric resonator stabilized FET oscillator [C]. Asia Pacific Microwave Conference,1997,23(13):565-568.
[37]J. Y. Lee and U. S. Hong. Voltage controlled dielectric resonator oscillator using three-terminal MESFET [J]. IEEE Electron,1994,30(16):1320～1324.
[38]R. L. Kautz. Picosecond pulses on superconducting strip lines [J]. Appl. Phys,1978,49(4): 308～312.
[39]黄玉兰.电磁场与微波技术[M].北京：人民邮电出版社,2007.
[40]吴礼群,夏牟,郑毅.C波段微波低相位噪声介质振荡器[J].固体电子研究与进展,2007,01(10)：157-160.
[41]曲燕霞.C波段点频频率源的研究[D].电子科技大学,2007.
[42]范寿康.微波技术与微波电流[M].北京：机械工业出版社,2003.
[43]J.A.Kong.电磁波理论[M].北京：电子工业出版社,2003.
[44]G. L. Patton and J. H. Comfort.75GHz fT SiGe-base HBT's [J]. IEEE Electron Device Lett, 1990,11(6):171.
[45]王嘉,林勇,何庆国.Ka波段介质谐振器的研究[J].半导体技术,2008,10(9):337～340.
[46]C. Tsitonis, V. Pauker. Temperature stabilization of GaAs MESFET oscillators using dielectric resonators [J]. IEEE Trans. Microwave theory Tech,1983,31(8):312～314.
[47]N. Tellmann, N. Klein, U. Dahne, etc. High-Q LaA103 dielectric resonators shielded by YBCO-films [J]. IEEE Trans. Appl. Supercond,1994,4(9):143～146.
[48]王晓岚.高稳定度锁相介质振荡器的研究与设计[D].西安电子科技大学,2007.
[49]S. Y. Yngvesson, Microwave Semiconductor Devices [M]. San Francisco:Kluwer Academic Publishers,1991.
[50]I. Bahl and P.Bhartia, Microwave Solid-State Circuit Design [M]. New York:Wiley Interscience,1988.
[51]G. D. Vendelin and A. M. Pavio, Microwave Circuit Design Using Linear and Nonlinear Techniques [M]. New York:Wiley,1990.
[52]G.Gonzalez, Microwave Transistor Amplifiers:Analysis and Design,2nd edition [M]. New York:Prentice-Hall,1997.
[53]K. Chang, Handbook of Microwave and Optical Components [M]. New York:Wiley Interscience,1990.
[54]R.E. Collin, Foundations for Microwave Engineering [M]. New York:John & Wiley,2006.
[55]I. Bahl,Microwave Solid State Circuit Design [M], New York:Wiley Interscienct,2003.
[56]G.Gonzalez, Microwave Transistor Amplifers, Analysis and Design [M]. Ottawa: Prentice-Hall,1997.
[57]J. Wenger,U:Guttich. Ka and W-Band PM-HFET DRO's [J]. IEEE Microwave Guided Wave Lett,1993,3(11):191-193.
[2]陈冬萍.射频识别技术(RFID)应用研究[D].华东师范大学,2006.
[3]彭友斌,邓毅华.2.45GHz RFID阅读器的设计与实现[J].微计算机信息,2007,7(11):104～108.
[4]张华；魏臻.无线射频识别技术RFID及其应用[J].计算机安全,2008,20(6):74-77.
[5]胡小华.基于RFID的电子不停车收费系统研究[D].北方工业大学,2008.
[6]杨会彩,樊延虎.RFID技术及其在ETC系统中的应用[J].现代电子技术,2008,15(10):63～65.
[7]白洁、高速公路不停车收费系统的研制[D].郑州大学,2006.
[8]潘勇.高速公路联网电子不停车收费系统安全体系的设计与实现[D].上海交通大学,2007.
[9]高永森,唐宗熙.X频段介质谐振振荡器的设计[J].电讯技术,2008,03(11):164～167
[10]宋红江,尹哲.Ku频段低相噪锁相介质振荡器[J].半导体技术,2008,07(9):156～158.
[11]曲燕霞,唐宗熙.C频段介质稳频振荡器的设计[J].电讯技参,2007,04(7):14～16.
[12]李英.电磁介质谐振器理论与应用[M].北京:电子工业出版社,1988.
[13]梁建刚,王海平.传输型耦合介质振荡器的计算机辅助设计[J].现代电子技术,2007,21(8):135～138.
[14]冯恩信.电磁场与电磁波[M].西安:西安交通大学出版社,2006.
[15]毕岗.电磁场与微波[M].杭州：浙江大学出版社,2006.
[16]I.Bahl.微波固态电路设计[M].北京：电子工业出版社, 2006.
[17]顾茂章,张克潜.微波技术[M]北京：清华大学出版社,1989.
[18]沈致远.微波技术[M].北京:国防工业出版社,1980.
[19]周清一.高稳定度锁相介质振荡器的研究与设计微波测量技术[M].北京：国防工业出版社,1964.
[20]廖承恩.微波技术基础[M].北京:国防工业出版社,1979.
[21]汤世贤.微波技术测量[M].北京:国防工业出版社,1979.
[22]刘学观,郭辉萍.微波技术与天线[M].西安:西安电子科技大学出版社,2006.
[23]任伟,赵家升.电磁场与微波技术[M].北京:电子工业出版社,2005.
[24]D. M. Pozar.微波工程[M].北京：电子工业出版社,2006.
[25]王晓岚.高速公路不停车收费系统的研制[D],西安电子科技大学,2007.
[26]陈永康.高稳定度锁相介质振荡器微波源的设计[D].武汉大学,2007.
[27]葛建民.低相噪介质稳频振荡器的设计[J].安徽大学学报(自然科学版),2006,21(6):233～235.
[28]J. Everard. Fundamentals of RF circuit design with low noise oscillator [M]. New York: Wiley,2002.
[29]F. Gao, Z. Zhou, M. Feng, M. Scharen, A. Cardona, and R. Forse. Hysteresis effect in microwave power transmission of high temperature superconducting coplanar transmission lines [J]. Appl. Phys. Lett,1995,67(9):2229-2232.
[30]I. J. Bahl and P. Bhartia. Microstrip Antennas [M]. Dedham MA:Aretch House,1980.
[31]逯贵祯.射频电路的分析和设计[M].北京：北京广播学院出版社,2002.
[32]廖娟.低相噪介质振荡的设计理论与实践[D].电子科技大学,2004.
[33]B. S. Virdec. Current techniques for tuning dielectric resonators [J]. Microwave Journal, 1998,34(7):130～138.
[34]F. Gao, M. V. Klein, J. Kruse, and M. Feng. Mode Coupling in Superconducting Parallel Plate Resonator in a Cavity with Outer Conductive Enclosure [J]. IEEE Transaction on Microwave Theory and Techniques,1996,44(11):6-10.
[35]T. Shen, K. A. Zaki, C. Wang, and J. Deriso. Tunable dielectric resonators with dielectric tuning disks in cylindrical enclosures [J]. Microwave Theory,2000,28(3):1441～1444.
[36]G. Molin and J. Repei. A study on the optical control of dielectric resonator stabilized FET oscillator [C]. Asia Pacific Microwave Conference,1997,23(13):565-568.
[37]J. Y. Lee and U. S. Hong. Voltage controlled dielectric resonator oscillator using three-terminal MESFET [J]. IEEE Electron,1994,30(16):1320～1324.
[38]R. L. Kautz. Picosecond pulses on superconducting strip lines [J]. Appl. Phys,1978,49(4): 308～312.
[39]黄玉兰.电磁场与微波技术[M].北京：人民邮电出版社,2007.
[40]吴礼群,夏牟,郑毅.C波段微波低相位噪声介质振荡器[J].固体电子研究与进展,2007,01(10)：157-160.
[41]曲燕霞.C波段点频频率源的研究[D].电子科技大学,2007.
[42]范寿康.微波技术与微波电流[M].北京：机械工业出版社,2003.
[43]J.A.Kong.电磁波理论[M].北京：电子工业出版社,2003.
[44]G. L. Patton and J. H. Comfort.75GHz fT SiGe-base HBT's [J]. IEEE Electron Device Lett, 1990,11(6):171.
[45]王嘉,林勇,何庆国.Ka波段介质谐振器的研究[J].半导体技术,2008,10(9):337～340.
[46]C. Tsitonis, V. Pauker. Temperature stabilization of GaAs MESFET oscillators using dielectric resonators [J]. IEEE Trans. Microwave theory Tech,1983,31(8):312～314.
[47]N. Tellmann, N. Klein, U. Dahne, etc. High-Q LaA103 dielectric resonators shielded by YBCO-films [J]. IEEE Trans. Appl. Supercond,1994,4(9):143～146.
[48]王晓岚.高稳定度锁相介质振荡器的研究与设计[D].西安电子科技大学,2007.
[49]S. Y. Yngvesson, Microwave Semiconductor Devices [M]. San Francisco:Kluwer Academic Publishers,1991.
[50]I. Bahl and P.Bhartia, Microwave Solid-State Circuit Design [M]. New York:Wiley Interscience,1988.
[51]G. D. Vendelin and A. M. Pavio, Microwave Circuit Design Using Linear and Nonlinear Techniques [M]. New York:Wiley,1990.
[52]G.Gonzalez, Microwave Transistor Amplifiers:Analysis and Design,2nd edition [M]. New York:Prentice-Hall,1997.
[53]K. Chang, Handbook of Microwave and Optical Components [M]. New York:Wiley Interscience,1990.
[54]R.E. Collin, Foundations for Microwave Engineering [M]. New York:John & Wiley,2006.
[55]I. Bahl,Microwave Solid State Circuit Design [M], New York:Wiley Interscienct,2003.
[56]G.Gonzalez, Microwave Transistor Amplifers, Analysis and Design [M]. Ottawa: Prentice-Hall,1997.
[57]J. Wenger,U:Guttich. Ka and W-Band PM-HFET DRO's [J]. IEEE Microwave Guided Wave Lett,1993,3(11):191-193.