摘要
有机薄膜场效应晶体管(OTFT)是有机电子学中的重要前沿课题,对于晶体管的性能和载流子传输机理的研究是该领域的重要研究方向。本论文研究了影响OTFT性能的主要因素和在气体氛围下OTFT的载流子传输机理。
论文分析了影响OTFT性能的主要因素,进而优化了相关工艺条件,研制得到高性能的OTFT,并研究了它们的相关特性。主要成果包括:⑴分析了陷阱浓度、半导体层内电场强度、载流子分布区域和并五苯薄膜晶形对OTFT性能的影响,制备了高纯度的半导体材料,优化了绝缘层厚度、半导体层厚度和半导体层沉积速率等器件制备工艺参数。⑵采用优化后的制备工艺,在玻璃基片上制备了载流子迁移率达到0.7cm2/Vs、开关电流比超过104的OTFT,器件结构为ITO/PMMA/并五苯/Au,并制备了柔性OTFT。⑶研究了柔性OTFT的卷曲特性,研究了不同卷曲方向和卷曲方式对于器件的影响。⑷研究了单个OTFT和OTFT组成的有源驱动电路的驱动特性。利用两个OTFT和一个电容组成了有源驱动电路,实现了有机发光二极管的有源驱动。
论文第二部分工作在分析OTFT载流子传输机理的基础上,研究了环境气氛对于晶体管载流子传输的影响。主要成果包括:⑴研究了H2O对OTFT稳定性的影响,揭示了水在并五苯薄膜的表面吸附是导致OTFT性能下降的一个重要原因。通过对OTFT进行封装,有效提高了器件的稳定性。⑵研究了OTFT在不同气压的空气、氮气和氮氧混合气氛下载流子迁移率的变化和响应特性,发现了晶体管载流子迁移率和气压的特定关系。OTFT对不同的气体组成有着不同的响应,有望充当有机气体传感器。⑶建立了气体分子影响OTFT中载流子传输的模型,分析了自由气体分子和吸附在半导体层表面的气体分子对载流子传输的不同影响。通过模型分析得到了在气体中OTFT的源漏电流公式。
Much attention has been attracted by organic thin-film field-effect transistors (OTFTs) in the past decade. Research on the performance of OTFTs and the mechanism of the carrier transport in tunnel is not only a significant topic related to physical chemistry, solid-state physics and microelectronics, but alsoone of the frontiers in the field of organic molecular electronics.
In this dissertation, the effects of concentration of defeats, the inner electric field in tunnels, carrier distribution in semiconductor layer and the crystalline form of pentacene film on the performance of OTFTs have been studied. Fabrication conditions of OTFTs have been optimized and high performance OTFT based on glass substrate with a field-effect mobility of 0.71 cm2/Vs and on/off ratio of 104 have been obtained. At the same time, the optimum conditions were applied in fabrication process of flexible OTFTs based on plastic substrate.
The curving characteristics of soft OTFTs were measured. It was found that the curvature paralleled to tunnel length would affect the performance of soft OTFTs due to the change of the pentacene layer morphology. Driving characteristics of OTFTs have also been measured. Organic lighting-emitting diodes (OLEDs) driven by one OTFT or an active-matrix driving circuit based on two OTFTs and one capacitance have been prepared. The change of the source-drain current of OTFTs connected in circuits, stability of OTFTs with long-time operation, responding and holding characteristics of active matrix driving circuits were investigated.
Based on the discussion of the carrier transport mechanism in the tunnel, the effect of gas on the performance of OTFTs has also been studied. It was found that OTFTs degraded fast when exposed in atmosphere, the adsorption of H2O on pentacene surface was determined to be the main reason of the degradation. Remarkable improvement in the device stability was achieved by device encapsulation with UV curable resin. In addition, our work demonstrated that the carrier mobility of OTFTs increased with gas pressure in high pressure region,
however, the mobility decreased with gas pressure in low pressure region. Bump of free gas molecules on pentacene particle and adsorption of gas molecules on pentacene film were considerd to be the two main factors that affected the carrier mobility.
A model of gas related transports, including gas-assisted transport and barrier-blocked transport, was proposed. The relationship between gas pressure and source-drain current was presented by an equation.
引文
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