多晶硅TFTs晶粒间界能态的OEMS分析
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摘要
多晶硅薄膜晶体管(Poly-Si TFT)由于具有高迁移率、更快的开关速度和更高的电流驱动能力,在有源矩阵液晶显示(AMLCD)等领域具有广阔的应用前景。但由于多晶硅薄膜材料存在晶粒间界,间界的带隙上产生大量的悬挂键和缺陷,形成可作为陷阱的连续型及离散型带隙能态,使多晶硅TFT呈现出十分复杂的电学特性。因此,对多晶硅薄膜晶体管晶粒间界微观陷阱能态信息有效获取技术的研究开发,及其定量分析理论的建构,便成为多晶硅薄膜材料及其器件研究和应用的基础,以及亟需解决的核心问题。
本文将光电子调制谱(OEMS)技术应用于固相晶化(SPC)方法制备的Poly-Si TFTs,对多晶硅薄膜材料的晶界陷阱态和界面态分布进行研究。首先,以波长被调制的红外光波循环激发晶界带隙态和界面态上的电子,获取光电子跃迁形成的高分辨率OEMS响应谱,以及与光学调制信号之间OEMS相延谱。其次,在Swanson等人建立的OEMS唯象理论基础上,建立Poly-Si TFTs的OEMS分析理论：分析了多晶硅TFTs的器件模型,计算了直流偏置与光调制下的沟道电流,讨论了OEMS电流调制效应并给出了对不同带隙能态OEMS电流一阶响应的表达式。再次,通过定量分析光激发函数,确定了利用OEMS响应谱与相延谱分析陷阱态性质的方法。最后,将所建立的分析方法应用于实验获得的多晶硅薄膜OEMS谱,在0～1.2eV之间探测到了四个离散型晶界陷阱态与一个连续型界面态；同时,对于OEMS谱1.2～2.4eV之间中出现的带隙展宽现象,提出了晶间氢化非晶硅模型,分析并给出了四个离散型晶界陷阱态与一个连续型界面态。所提取的带隙能态与文献结果较好地吻合,进一步验证了OEMS技术的可靠性。
因此,OEMS技术为深入研究多晶硅薄膜场效应器件晶粒间界的能态分布与能态性质,以及进一步揭示Poly-Si TFTs的物理机理,提供了一种既全面又直接的分析方法。
Polycrystalline silicon thin film transistor (Poly-Si TFT) has broad application prospect in AMLCD for its high mobility, faster swith vilosity and higher current driving ability. However, owing to grain boundary (GB) existing in poly-Si thin film which generates a large number of dangling bonds and defectes in the band gap, poly-Si TFT appears very complex electrical properties as continuous and discrete band gap states formed to be traps. Therefore, research and development on effective acquisition of GB microscopic trap states information in poly-Si TFT and construction of quantitative analysis theory has been the foundation of research and application in both poly-Si thin film material and device. It also becomes a key problem need to be solved as soon as possible.
In this paper, Opto-electronic modulation spectroscopy (OEMS) technique is applied in poly-Si TFTs fabricated by SPC method to study the distribution of GB traps and interface states in poly-Si thin film material. Firstly, electrons in GB traps and interface states are excited circularly by infrared light with modulated wavelength to obtain high resolution OEMS response spectrum formed by photon transition and OEMS phase spectrum between optical modulated signals. Secondly, analytical theory of OEMS in poly-Si is built in the foundation of Swanson's theory. Device model of poly-Si TFTs is analyzed, channel current under bias and optical modulation is calculated, OEMS current modulation effect is discussed and expressions of OEMS current first order response to different band gap states are given. Once again, judgement of traps properties using OEMS response and phase spectrums is given through quantitative analysis in optical emission function. Finally, applying the established theory to analyse OEMS spectrum, four discrete GB trap states and one continuous interface state are obtained from 0 eV to 2.4 eV. Meanwhile, model of hydrogenated amorphous silicon between GB is proposed to explain phenomenon of band gap broadening in OEMS from 1.2 eV to 2.4 eV, and four discrete GB trap states and one continuous interface state are obtained. Extracted trap states are in good agreement with documents, and the reliability of OEMS technique is further verified.
Therefore, OEMS technique provides a comprehensive and direct analytical method for deep study GB states distribution and characteristics in poly-Si TFT device and further reveal physical mechanism of poly-Si TFTs.
本文将光电子调制谱(OEMS)技术应用于固相晶化(SPC)方法制备的Poly-Si TFTs,对多晶硅薄膜材料的晶界陷阱态和界面态分布进行研究。首先,以波长被调制的红外光波循环激发晶界带隙态和界面态上的电子,获取光电子跃迁形成的高分辨率OEMS响应谱,以及与光学调制信号之间OEMS相延谱。其次,在Swanson等人建立的OEMS唯象理论基础上,建立Poly-Si TFTs的OEMS分析理论：分析了多晶硅TFTs的器件模型,计算了直流偏置与光调制下的沟道电流,讨论了OEMS电流调制效应并给出了对不同带隙能态OEMS电流一阶响应的表达式。再次,通过定量分析光激发函数,确定了利用OEMS响应谱与相延谱分析陷阱态性质的方法。最后,将所建立的分析方法应用于实验获得的多晶硅薄膜OEMS谱,在0～1.2eV之间探测到了四个离散型晶界陷阱态与一个连续型界面态；同时,对于OEMS谱1.2～2.4eV之间中出现的带隙展宽现象,提出了晶间氢化非晶硅模型,分析并给出了四个离散型晶界陷阱态与一个连续型界面态。所提取的带隙能态与文献结果较好地吻合,进一步验证了OEMS技术的可靠性。
因此,OEMS技术为深入研究多晶硅薄膜场效应器件晶粒间界的能态分布与能态性质,以及进一步揭示Poly-Si TFTs的物理机理,提供了一种既全面又直接的分析方法。
Polycrystalline silicon thin film transistor (Poly-Si TFT) has broad application prospect in AMLCD for its high mobility, faster swith vilosity and higher current driving ability. However, owing to grain boundary (GB) existing in poly-Si thin film which generates a large number of dangling bonds and defectes in the band gap, poly-Si TFT appears very complex electrical properties as continuous and discrete band gap states formed to be traps. Therefore, research and development on effective acquisition of GB microscopic trap states information in poly-Si TFT and construction of quantitative analysis theory has been the foundation of research and application in both poly-Si thin film material and device. It also becomes a key problem need to be solved as soon as possible.
In this paper, Opto-electronic modulation spectroscopy (OEMS) technique is applied in poly-Si TFTs fabricated by SPC method to study the distribution of GB traps and interface states in poly-Si thin film material. Firstly, electrons in GB traps and interface states are excited circularly by infrared light with modulated wavelength to obtain high resolution OEMS response spectrum formed by photon transition and OEMS phase spectrum between optical modulated signals. Secondly, analytical theory of OEMS in poly-Si is built in the foundation of Swanson's theory. Device model of poly-Si TFTs is analyzed, channel current under bias and optical modulation is calculated, OEMS current modulation effect is discussed and expressions of OEMS current first order response to different band gap states are given. Once again, judgement of traps properties using OEMS response and phase spectrums is given through quantitative analysis in optical emission function. Finally, applying the established theory to analyse OEMS spectrum, four discrete GB trap states and one continuous interface state are obtained from 0 eV to 2.4 eV. Meanwhile, model of hydrogenated amorphous silicon between GB is proposed to explain phenomenon of band gap broadening in OEMS from 1.2 eV to 2.4 eV, and four discrete GB trap states and one continuous interface state are obtained. Extracted trap states are in good agreement with documents, and the reliability of OEMS technique is further verified.
Therefore, OEMS technique provides a comprehensive and direct analytical method for deep study GB states distribution and characteristics in poly-Si TFT device and further reveal physical mechanism of poly-Si TFTs.
引文
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