基于Doherty技术的HBT功率放大器设计
摘要
随着现代移动通信技术的发展,高峰均比信号的非恒包络调制方式得到广泛应用,例如OFDM、64QAM、QPSK等。传统的A类或AB类功放在放大这类高峰均比信号时,为了保证线性度必须采取功率回退的办法,这样又使得功放的效率降到很低。功放的低效率不仅导致资源的浪费,还会减少功放的使用寿命。因此功率回退下功率放大器效率的提升是当前功放研究的热点和难点。
本论文针对上述问题,首先介绍了异质结双极性晶体管(HBT)的发展和特性,接着以Doherty结构为主要研究对象,理论上详细推导了Doherty功率放大器的基本工作原理,简单介绍了Doherty衍生结构的基本原理。
接着,根据功率放大器系统设计指标对系统实现方法进行了分析,仿真了各级电路,末级功放采用Triquint公司的第二代HV-HBT器件TG2H214220,从单管放大器设计入手,对输入输出匹配电路做了仿真设计。制作了一个平均输出功率为80W的对称Doherty功率放大器系统。
最后对功放放大器系统的各级电路调试与测试进行了介绍,特别是末级Doherty功率放大器的调试与测试。测试结果达到设计目标,其中Doherty功率放大器在输出功率为49dBm时(功率回退7.4dB),效率大于43%。
With the development of modern mobile communication technology, the high peak-to-average ratio non-constant envelope modulation signal is widely used, such as OFDM, 64QAM, QPSK, etc. In order to satisfy the linearity of the power, the traditional class A or class AB power amplifier must operate at a power back-off region from saturation when the signal is high peak-to-average ratio. However, the power amplifier efficiency reduces to very low when power is back off. Power amplifier wastes of resources, not only led to low efficiency but also reduces the life of the amplifier. Therefore in current power amplifier research the power amplifier efficiency improvement has become the hot and difficult issue when power is back off.
This paper aims to find the way to solve this problem. Firstly, it introduces the heterojunction bipolar transistor (HBT) development and characteristics of the structure and then takes Doherty as the main subject, in theory, deduces the basic principle of Doherty amplifier, briefly introduces the basic principles of derivative structure of Doherty.
Then, according to design specifications of the power amplifier system the implementation method is analyzed, and the circuits at all levels are simulated. The Triquint’s Gen2 HV-HBT TG2H214220 is used for designing the Doherty amplifier. From the design of single-chip amplifier, input and output matching circuits are analyzed. Then, a symmetrical Doherty amplifier system with average output power 80Watt is presented.
Finally, at all levels of the system amplifier circuit’s debugging and testing are introduced, especially the final Doherty power amplifier. Test results meet the design objectives. When the Doherty power amplifier output power reaches to 49dBm(the power back-off 7.4dB from saturation), the efficiency is more than 43%.
本论文针对上述问题,首先介绍了异质结双极性晶体管(HBT)的发展和特性,接着以Doherty结构为主要研究对象,理论上详细推导了Doherty功率放大器的基本工作原理,简单介绍了Doherty衍生结构的基本原理。
接着,根据功率放大器系统设计指标对系统实现方法进行了分析,仿真了各级电路,末级功放采用Triquint公司的第二代HV-HBT器件TG2H214220,从单管放大器设计入手,对输入输出匹配电路做了仿真设计。制作了一个平均输出功率为80W的对称Doherty功率放大器系统。
最后对功放放大器系统的各级电路调试与测试进行了介绍,特别是末级Doherty功率放大器的调试与测试。测试结果达到设计目标,其中Doherty功率放大器在输出功率为49dBm时(功率回退7.4dB),效率大于43%。
With the development of modern mobile communication technology, the high peak-to-average ratio non-constant envelope modulation signal is widely used, such as OFDM, 64QAM, QPSK, etc. In order to satisfy the linearity of the power, the traditional class A or class AB power amplifier must operate at a power back-off region from saturation when the signal is high peak-to-average ratio. However, the power amplifier efficiency reduces to very low when power is back off. Power amplifier wastes of resources, not only led to low efficiency but also reduces the life of the amplifier. Therefore in current power amplifier research the power amplifier efficiency improvement has become the hot and difficult issue when power is back off.
This paper aims to find the way to solve this problem. Firstly, it introduces the heterojunction bipolar transistor (HBT) development and characteristics of the structure and then takes Doherty as the main subject, in theory, deduces the basic principle of Doherty amplifier, briefly introduces the basic principles of derivative structure of Doherty.
Then, according to design specifications of the power amplifier system the implementation method is analyzed, and the circuits at all levels are simulated. The Triquint’s Gen2 HV-HBT TG2H214220 is used for designing the Doherty amplifier. From the design of single-chip amplifier, input and output matching circuits are analyzed. Then, a symmetrical Doherty amplifier system with average output power 80Watt is presented.
Finally, at all levels of the system amplifier circuit’s debugging and testing are introduced, especially the final Doherty power amplifier. Test results meet the design objectives. When the Doherty power amplifier output power reaches to 49dBm(the power back-off 7.4dB from saturation), the efficiency is more than 43%.
引文
[1] W.H.Doherty A new high efficiency power amplifier for modulated waves.Pro.IRE,2003,vol.24:1163-1182
[2] F.H.Raab. Efficiency of Doherty RF power amplifier system. IEEE Trans. Broadcast, Sep 1987,Vol.BC-33,No.3:77–83
[3] Jangheon Kim,Jeonghyeon Cha,Ildu Kim.Optimum operation of asymmetrical-cells-based linear doherty power amplifiers-uneven power drive and power matching.IEEE Transaction on Microwave Theory and Techniques,2005,vol.53(5):1802-1809
[4] A.Z.Markos,P.Colantonio,F.Giannini,et al.A 6W Uneven Doherty Power Amplifier in GaN Technology,European Conference on Wireless Technologies,2007,Page(s):379;382
[5] Yong-Sub Lee,Mun-Woo Lee,Yoon-Ha Jeong.Unequal-Cells Based GaN HEMT Doherty amplifier with an extended efficiency range.IEEE Microwave and Wireless Components Letters,2008,vol.18(8):536-538
[6] Daehyun Kang,Jinsung Choi,Daekyu Yu,et al.Input power divideing of Doherty power amplifiers for handset applications.IEEE MTT-S,2009,Page(s):421-424
[7] Sung-Chan Jung,O.Hammi,F.M.Ghannouchi,.Design Optimization and DPD linearization of GaN-Based unsymmetrical doherty power amplifiers for 3G Multi-carrier applications.IEEE Transactions on Microwave Theory and Techniques,2009,vol.57(9):2105-2113
[8] Youngoo Yang,Jeonghyeon Cha,Bumjae Shin,et al.A fully match N-way doherty amplifier with optimized linearity.IEEE Transactions on Microwave Theory and Techniques,2003,vol.51(3):986-993
[9] N.Srirattana,A.Raghavan,D.Heo,et al.A high efficiency multistage Doherty power amplifier for WCDMA.Radio and Wireless Conference,2003,Page(s):397-400
[10] Suo Hai-lei;Bao Jing-fu.Three-way doherty power amplifier with uneven power drive.IEEE International Conference on Communication Technology,2008,Page(s):293-296
[11] K.W.Eccleston.Analysis of a multi-transistor interleaved doherty amplifier.Asia Pacific Microwave Conference,2009,Page(s):1581-1584
[12] Yong-Sub Lee,Mun-Woo Lee,Sang-Ho Kam.A new wideband distributed doherty amplifier for WCDMA repeater applications.IEEE Microwave and Wireless ComponentsLetters,2009,vol.19(10):668-670
[13] Jangheon Kim,Bumman Kim,Young Yun Woo.Advanced design of linear doherty amplifier for high efficiency using saturation amplifier.IEEE MTT-S,2007,Page(s):1573-1576
[14] Gil Wong Choi,Hyoung Jong Kim,Woong Jae Hwang.High efficiency class-E tuned doherty amplifier using GaN HEMT.IEEE MTT-S,2009,Page(s):925-928
[15] P.Colantonio, F.Giannini, F,R.Giofre, R.Theory an experimental results of a class F AB-C Doherty power amplifier. IEEE Transactionson Microwave Theory and Techniques,2009.vol.57(8):1936-194
[16]陈雷东InGaAs/InP HBT的直流特性分析与设计:[硕士学位论文],上海:中国科学院,2003
[17] W.S.hockley,US patent,2569347,1951
[18]林玲InGaP/GaAs微波HBT器件及VCO电路的研究:[博士学位论文],上海:中国科学院,2007
[19] G.I.Haddad.R.J. Trew.Mocrowave solid-start active devices.microwave Theory and Techniques.IEEE Transactions on.2002.50(3):760-779
[20] H.Howe.Microwave Integrated Circuits-An Historical Perspective.Microwave Theory and Techniques.IEEE Transactions on.1984.32:991-996
[21] H.Fukui.Optimal noise figure of microwave GaAs MESFET’s.Electron Devices,IEEE Transactions, 1979,26(7);1032-1037
[22] R.L.Van Tuyl,C.A. Liechti.Hign-speed integrated logic with GaAs MESFET’s. Solid-State Circuits, IEEE Journal of, 1974,9(5):269-276
[23] M.JMondry H.Kromer. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base,grown by molecular beam epitaxy. Electron Device Letters, IEEE, 1985,6(4):175-177
[24] S.L.Deelage,M.A.di Forte-Poisson, H.Blanck, C.Brylinski, E.Chartier, P.Collot.First microwave characterization of LP-MOCVD grown GaInP/GaAs self-aligned HBT.Electeonics Letters,1991,27(3):253-254
[25] D.A.Ahmari,M.T. Fresina, Q.J. Hartmann, D.W.Barlage, P.J. Mares, M feng, G.E. Stillman.High-speed InGaP/GaAs HBTs with a strained In X Ga1 ? x As base. Electron Device Letters,IEEE,1996,17(5):226-228
[26] Craig Steinbeiser, Thomas Landon, Charles Suckling 250W HVHBT Doherty with 57% WCDMA Efficiency Linearized to -55dBc for 2c11 6.5dB PAR Compound Semiconductor Integrated Circuit Symposium,2007.CSIC 2007.IEEE
[27] M.Iwamoto&All,"An extended Doherty Amplifier with High Efficiency over a Wide Power Range",IEEE-MTT,12/01
[28] James Sean Kim,PhD.Charly Jeung,Ph.D.Peter Shin in Ansoft Corporation,Advanced Power Amplifier Design Using Doherty Configurations,Ansoft 2003/Global Seminars
[2] F.H.Raab. Efficiency of Doherty RF power amplifier system. IEEE Trans. Broadcast, Sep 1987,Vol.BC-33,No.3:77–83
[3] Jangheon Kim,Jeonghyeon Cha,Ildu Kim.Optimum operation of asymmetrical-cells-based linear doherty power amplifiers-uneven power drive and power matching.IEEE Transaction on Microwave Theory and Techniques,2005,vol.53(5):1802-1809
[4] A.Z.Markos,P.Colantonio,F.Giannini,et al.A 6W Uneven Doherty Power Amplifier in GaN Technology,European Conference on Wireless Technologies,2007,Page(s):379;382
[5] Yong-Sub Lee,Mun-Woo Lee,Yoon-Ha Jeong.Unequal-Cells Based GaN HEMT Doherty amplifier with an extended efficiency range.IEEE Microwave and Wireless Components Letters,2008,vol.18(8):536-538
[6] Daehyun Kang,Jinsung Choi,Daekyu Yu,et al.Input power divideing of Doherty power amplifiers for handset applications.IEEE MTT-S,2009,Page(s):421-424
[7] Sung-Chan Jung,O.Hammi,F.M.Ghannouchi,.Design Optimization and DPD linearization of GaN-Based unsymmetrical doherty power amplifiers for 3G Multi-carrier applications.IEEE Transactions on Microwave Theory and Techniques,2009,vol.57(9):2105-2113
[8] Youngoo Yang,Jeonghyeon Cha,Bumjae Shin,et al.A fully match N-way doherty amplifier with optimized linearity.IEEE Transactions on Microwave Theory and Techniques,2003,vol.51(3):986-993
[9] N.Srirattana,A.Raghavan,D.Heo,et al.A high efficiency multistage Doherty power amplifier for WCDMA.Radio and Wireless Conference,2003,Page(s):397-400
[10] Suo Hai-lei;Bao Jing-fu.Three-way doherty power amplifier with uneven power drive.IEEE International Conference on Communication Technology,2008,Page(s):293-296
[11] K.W.Eccleston.Analysis of a multi-transistor interleaved doherty amplifier.Asia Pacific Microwave Conference,2009,Page(s):1581-1584
[12] Yong-Sub Lee,Mun-Woo Lee,Sang-Ho Kam.A new wideband distributed doherty amplifier for WCDMA repeater applications.IEEE Microwave and Wireless ComponentsLetters,2009,vol.19(10):668-670
[13] Jangheon Kim,Bumman Kim,Young Yun Woo.Advanced design of linear doherty amplifier for high efficiency using saturation amplifier.IEEE MTT-S,2007,Page(s):1573-1576
[14] Gil Wong Choi,Hyoung Jong Kim,Woong Jae Hwang.High efficiency class-E tuned doherty amplifier using GaN HEMT.IEEE MTT-S,2009,Page(s):925-928
[15] P.Colantonio, F.Giannini, F,R.Giofre, R.Theory an experimental results of a class F AB-C Doherty power amplifier. IEEE Transactionson Microwave Theory and Techniques,2009.vol.57(8):1936-194
[16]陈雷东InGaAs/InP HBT的直流特性分析与设计:[硕士学位论文],上海:中国科学院,2003
[17] W.S.hockley,US patent,2569347,1951
[18]林玲InGaP/GaAs微波HBT器件及VCO电路的研究:[博士学位论文],上海:中国科学院,2007
[19] G.I.Haddad.R.J. Trew.Mocrowave solid-start active devices.microwave Theory and Techniques.IEEE Transactions on.2002.50(3):760-779
[20] H.Howe.Microwave Integrated Circuits-An Historical Perspective.Microwave Theory and Techniques.IEEE Transactions on.1984.32:991-996
[21] H.Fukui.Optimal noise figure of microwave GaAs MESFET’s.Electron Devices,IEEE Transactions, 1979,26(7);1032-1037
[22] R.L.Van Tuyl,C.A. Liechti.Hign-speed integrated logic with GaAs MESFET’s. Solid-State Circuits, IEEE Journal of, 1974,9(5):269-276
[23] M.JMondry H.Kromer. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base,grown by molecular beam epitaxy. Electron Device Letters, IEEE, 1985,6(4):175-177
[24] S.L.Deelage,M.A.di Forte-Poisson, H.Blanck, C.Brylinski, E.Chartier, P.Collot.First microwave characterization of LP-MOCVD grown GaInP/GaAs self-aligned HBT.Electeonics Letters,1991,27(3):253-254
[25] D.A.Ahmari,M.T. Fresina, Q.J. Hartmann, D.W.Barlage, P.J. Mares, M feng, G.E. Stillman.High-speed InGaP/GaAs HBTs with a strained In X Ga1 ? x As base. Electron Device Letters,IEEE,1996,17(5):226-228
[26] Craig Steinbeiser, Thomas Landon, Charles Suckling 250W HVHBT Doherty with 57% WCDMA Efficiency Linearized to -55dBc for 2c11 6.5dB PAR Compound Semiconductor Integrated Circuit Symposium,2007.CSIC 2007.IEEE
[27] M.Iwamoto&All,"An extended Doherty Amplifier with High Efficiency over a Wide Power Range",IEEE-MTT,12/01
[28] James Sean Kim,PhD.Charly Jeung,Ph.D.Peter Shin in Ansoft Corporation,Advanced Power Amplifier Design Using Doherty Configurations,Ansoft 2003/Global Seminars