大功率半导体激光器阵列温度分布模型建立与实验验证
摘要
大功率半导体激光器具有高转换效率、高可靠性及较长的使用寿命,在泵浦固体激光器、打印、材料加工、通信等方面都有着广泛的应用。但是,尽管半导体激光器具有较高的转换效率,还是有大部分的电功率被转化生成了热,导致激光二极管工作结温的升高。而温度升高必然带来半导体激光器阈值电流增加,发射波长红移,造成模式的不稳定,同时还增加了内部缺陷,对器件的寿命有严重影响。
在本文中,首先从理论分析和实验数据两个方面入手,分析温度对激光器各个性能参数的影响。然后从基本概念出发,分析大功率激光器的热源分布、热阻及热耗散功率。利用ANSYS软件模拟半导体激光器阵列芯片及载体中的稳态及瞬态热分布是本论文的重点。ANSYS(Analysis Systems)软件是国际流行的融结构、热力、流体、电磁、声学于一体的大型通用有限元分析软件,可以广泛地应用于结构分析、热传导分析、电磁场分析、流体分析以及耦合场分析(CFD)等多个领域。
通过实验对模拟结果进行检验也是本论文的一个重要方面。温升测量的方法及手段依测量原理不同可分为两类:一类是利用半导体激光器本身电学或光学参数随温度变化的特性而将其作为温敏参数。但这种方法依据温度对半导体激光器某一特性的影响,给出其某种意义上的平均温度;另一类是利用一些常规的测量技术,测量半导体激光器的腔面温度的分布。本文主要利用第一类方法,对半导体激光器阵列的稳态热阻进行测量,并详细介绍了半导体激光器各个参数的测量方法。
在本文的最后部分,介绍了如何对半导体激光器的热参数进行优化及半导体激光器常用的散热技术。这两方面揭示了对热特性进行研究、模拟的目的所在,即减少产热和增加散热,这也是在半导体激光器阵列芯片及载体的设计中必须要考虑的关键问题。
High-power semiconductor lasers have the properties of high converting efficiency, high dependability and much longer life, so they are widely used in the fields of pumping solid lasers, printing, processing the material and communicating. Although semiconductor lasers have high converting efficiency, there is still much electric power that is converted to heat, which leads to higher knot temperature on the laser diode. And temperature rising will result in the increasing of threshold current , the moving of wavelength to infrared, the changing of mode and the increasing of inside objection, which will influence the life of the apparatus badly.
In this article, firstly we have analysed the influence of the temperature to the properties of the lasers, by the hands of theory and testing data. Secondly, we have analysed the thermal fountain distribution, thermal resistance and thermal power based on the basic conception. The important part of this article is to simulate the stable and transient thermal distribution using the Analysis system (ANSYS) software. The ANSYS software is a software that based on the theory of finite element, and it can be used in the fields of configuration analysis, thermal analysis, electromagnetic analysis, fluid analysis and couple field analysis.
Another important part of this article is to prove the simulating result by the method of test. Based on the testing theory, there are two kinds of testing methods for testing the rising temperature. The first one uses the trait that the electric or optic parameters of semiconductor lasers can change with the temperature. This method only gives the average temperature according to one of the parameter’s changing with the temperature. The other one uses some conventional testing method to test the facet temperature of the semiconductor lasers. In this article, we used the first method to test the stable thermal resistance, and we introduced some testing methods to test the parameters of semiconductor lasers.
In the last part, we introduced the technology of optimizing the thermal parameters and dispersing heat. In this part, we can see the aim to analyse and simulate the thermal character, and that also is the important part to be considered when designing the chip and heatsink.
在本文中,首先从理论分析和实验数据两个方面入手,分析温度对激光器各个性能参数的影响。然后从基本概念出发,分析大功率激光器的热源分布、热阻及热耗散功率。利用ANSYS软件模拟半导体激光器阵列芯片及载体中的稳态及瞬态热分布是本论文的重点。ANSYS(Analysis Systems)软件是国际流行的融结构、热力、流体、电磁、声学于一体的大型通用有限元分析软件,可以广泛地应用于结构分析、热传导分析、电磁场分析、流体分析以及耦合场分析(CFD)等多个领域。
通过实验对模拟结果进行检验也是本论文的一个重要方面。温升测量的方法及手段依测量原理不同可分为两类:一类是利用半导体激光器本身电学或光学参数随温度变化的特性而将其作为温敏参数。但这种方法依据温度对半导体激光器某一特性的影响,给出其某种意义上的平均温度;另一类是利用一些常规的测量技术,测量半导体激光器的腔面温度的分布。本文主要利用第一类方法,对半导体激光器阵列的稳态热阻进行测量,并详细介绍了半导体激光器各个参数的测量方法。
在本文的最后部分,介绍了如何对半导体激光器的热参数进行优化及半导体激光器常用的散热技术。这两方面揭示了对热特性进行研究、模拟的目的所在,即减少产热和增加散热,这也是在半导体激光器阵列芯片及载体的设计中必须要考虑的关键问题。
High-power semiconductor lasers have the properties of high converting efficiency, high dependability and much longer life, so they are widely used in the fields of pumping solid lasers, printing, processing the material and communicating. Although semiconductor lasers have high converting efficiency, there is still much electric power that is converted to heat, which leads to higher knot temperature on the laser diode. And temperature rising will result in the increasing of threshold current , the moving of wavelength to infrared, the changing of mode and the increasing of inside objection, which will influence the life of the apparatus badly.
In this article, firstly we have analysed the influence of the temperature to the properties of the lasers, by the hands of theory and testing data. Secondly, we have analysed the thermal fountain distribution, thermal resistance and thermal power based on the basic conception. The important part of this article is to simulate the stable and transient thermal distribution using the Analysis system (ANSYS) software. The ANSYS software is a software that based on the theory of finite element, and it can be used in the fields of configuration analysis, thermal analysis, electromagnetic analysis, fluid analysis and couple field analysis.
Another important part of this article is to prove the simulating result by the method of test. Based on the testing theory, there are two kinds of testing methods for testing the rising temperature. The first one uses the trait that the electric or optic parameters of semiconductor lasers can change with the temperature. This method only gives the average temperature according to one of the parameter’s changing with the temperature. The other one uses some conventional testing method to test the facet temperature of the semiconductor lasers. In this article, we used the first method to test the stable thermal resistance, and we introduced some testing methods to test the parameters of semiconductor lasers.
In the last part, we introduced the technology of optimizing the thermal parameters and dispersing heat. In this part, we can see the aim to analyse and simulate the thermal character, and that also is the important part to be considered when designing the chip and heatsink.
引文
[1] 江剑平.半导体激光器.北京:电子工业出版社,2000:1-7,46-48
[2] 黄德修,刘雪峰.半导体激光器及其应用.北京:国防工业出版社,1999:1-7,185-188
[3] Volker Raab and Ralf Menzel.Phase-locked array of 25 broad-area lasers.Proceedings of SPIE,laser Resonators and Beam Control,2002,4629:24-30
[4] David F Welch.A Brief History of High-Power Semiconductor Laser.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUW ELECTRONICS,2000,6(6):1470-1477
[5] 黄德修.半导体光电子学.成都:电子科技大学出版社,1994:120-158
[6] P.Lacovara,H.Choi,C.A.Wang.Room temperature diode-pumped YB:YAG laser.IEEE Optical Letters,1991,16(14):32-34
[7] X.He,A.Ovtchinnikov,S.Yang.Efficient high power reliable InGaAs/AlGaAs (940nm) monolithic laser diode arrays[J].IEEE Electronics letters,1999,35(20):1739-1740
[8] C.A.Wang,S.H.Groves,New material for diode laser pumping of solid-state lasers[J].Journal of Quantum Electronics,1992,28(4):942-951
[9] Shawn A Hall,Ramon Lane,Han-chung Wang,et al.Assembly of laser-fiber arrays.JOURNAL OF LIGHTWAVE TECHNOLOGY,1994,12(10):1820-1826
[10] p Chanclon,M Thual,J Lostec,et al.Highly efficient collective coupling between laser diode array and lensed fibre ribbon.ELECTRONICS LETTERS,1998,34(3):273-274
[11] H Honmou and M Itoh.Optical coupling of laser diode array to singlemode-fibre array with heat-treated hemispherical micromens.ELECTRONICS LETTERS,1995,31(10):793-794
[12] David S Sumida,Alexander A Betin,Hans Bruesselbach.Diode-pumped Yb:YAG catches up with Nd:YAG[J].Laser Focus World,1995,35(6):63-70
[13] Yasukazu Izawa,Masanobu Yamanaka and Sadao Nakai.Development of high-power DPSSL and its application.CLEO Pacific Rim’99/213
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[22] 陈国鹰,马祖光,孙以材.量子阱激光器中的热分布对光输出特性的影响.河北工业大学学报, 1999,28(1):42-46
[23] 陈国鹰.高功率量子阱激光器及其诸特性相互耦合影响的研究.博士论文.哈尔滨:哈尔滨工业大学,1998
[24] Ali M.Drawish,Andrew Bayba,and H. Alfred Hung.Thermal Resistance Calculation of AlGaN/GaN on SiC Devices.IEEE MTT-S Digest,2004:2039-2042
[25] 杨强生.高等传热学.上海:上海交通大学出版社,1996
[26] H.Ribot,K.W.Lee,R.J.Simes.Disordering of GaAs/AlGaAs multiple quantum well structure by thermal annealing for monolithic integrationof laser and phase modulator.Applied Physics Letter.1989,55(7):672-674
[27] V.V Bezotosnyi,Kh Kumykov,N.V Markova.Ultimate output parameters of laser diode bars and arrays[J].Quantum Electronics,1997,Vol27:481-484
[28] R.P.Sarzala,W.Nakawaski.Thermal properties of buried heterostructure diode lasers [J].Journal of Optoelectronics,1993,97(8):705-725
[29] R.Puchert,A.Barwolff,M.VoB.Influence of the mounting configuration on the transient thermal behavior of high power laser diode arrays.1997Electronic Components and Technology Conference,1254-1259
[30] Y.Lu,S.Zhang,J.Cheng.Theoretical study of transient thermal conduction and temperature distribution generated by pulsed laser.Applied Physics,2000,70(4):85-90
[31] Roland Puchert,Artur Barwollf,Michael Vob.Transient thermal behavior of high power diode laser arrays.IEEE Transactions on Components,2000,23(1):95-100
[32] Massayuki Ishikawa,Hideo Shiozawa,Kazuhiko Itaya.Temperature dependence of the threshold current for InGaAlP visible laser Diodes[J].IEEE Journal of Quantum Electronics.1991,27(1):23-28
[33] 孔祥谦.有限单元法在传热学中的应用,北京:科学出版社,1998
[34] Kimio Shigihara.High power operation of broad area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping.IEEE Journal of Quantum Electronics. 1991,27(6):1537-1543
[35] 唐兴伦,范群波,张朝晖等.ANSYS 工程应用教程-热与电磁学篇.北京:中国铁道出版社,2003
[36] 谭建国.使用 ANSYS6.0 进行有限元分析.北京:北京大学出版社,2002
[37] 嘉木工作室.NSYS5.7 有限元实例分析教程.北京:机械工业出版社,2002
[38] Kazuhiko Nemoto , Masamichi Ogawa , Toshimass Kobayashi et al . hybtid-integrated two-dimensional (3*24) high-efficiency high-power laser diode array . CLEO/PACIFIC RIM/THURSDAY AFTERNOON.THO2:1545
[39] A.Syrbu,A.Mereutza,G.Suruceau et al.AlGaAs/InGaAs buried heterostructure laser diode for pumping solid state lasers.IEEE 1995:453-456
[40] J.W.Tomm,A.Barwolff,R.Puchert et al.heating of high-power laser diode arrays:from temperature data to power management and failure mechanism.CLEO’98/WEDNESDAY AFTERNOON,CWF21
[41] J.F.P Dabkowski,temperature profile along the cavity axis of power quMmtum well lasers during operation,1994,Appl.Phys.Lett,64(1):13-15
[42] W C.Tang,Raman mincroprobe study of the time development of AlGaAs single quantum well lasers facet temperature on route to catastrophic breakdown,1991,Appl.Phys.Lett,58(6):557-559
[43] C.H.Henry.catastrophic damage of Ga1-xAlxAs double-heterostructure laser material.Journal of Applied Physics,1979,50(5):3721-3732
[44] J.M.Rommel.photoluminescence measurment of the facet temperature of 1W gain-guided AlGaAs/GaAs lasers diodes.Journal of Applied Physics,1996,80(11):6547-6549
[45] Hans.Brugger.mapping of local temperatures on mirrors of AlGaAs/GaAs laser Diodes.Appl Phys Lett,1990,56(11):1049-1051
[46] 谢红云.高占空比(20%)大功率激光器阵列设计制作及其热特性分析.硕士论文.天津:河北工业大学,2003
[47] Kimio Shigihara.High power operation of broad area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping.IEEE Journal of Quantum Electronics.1991,27(6):1537-1543
[48] John G.Endriz,Mitral Vakili,Gerald S.Brower.High power diode laser arrays[J].IEEE Journal of quantum electronics,1992,28(4):952-965
[49] V.V Bezotosnyi,Kh Kumykov,N.V Markova.Ultimate output parameters of laser diode bars and arrays[J].Quantum Electronics,1997,27:481-484
[50] Nils W.Carlson.Monolithic Diode Laser Arrays.Springer-Verlag,1994
[51] 顾长志,金曾孙,吕宪义,等.使用金刚石膜热沉的半导体激光器特性研究.半导体学报,1997,18(11):840-843
[52] Roland Puchert,Artur B?rwolff,Michael Vo?,et al.Transient Thermal Behavior of High Power Diode Laser Arrays.IEEE TRANSACTIONS ON COMPONENTS,PACKAGING AND MANUFACTURING TECHNOLOGY PART A,2000,23(1):95-100
[53] Ray Beach,William J.Benett,Barry L.Modular Microchannel Cooled Heatsinks for High Average Power Laser Diode Arrays.IEEE JOURNAL OF QUANTUM ELECTRONICS,1992,28(4):966-976
[54] Jennijer J. Huddle Louis C. Chow Shuy e Lei et al.Thermal Management of Diode Laser Arrays. IEEE SEMI-THERM Symposium,2000:154-162
[2] 黄德修,刘雪峰.半导体激光器及其应用.北京:国防工业出版社,1999:1-7,185-188
[3] Volker Raab and Ralf Menzel.Phase-locked array of 25 broad-area lasers.Proceedings of SPIE,laser Resonators and Beam Control,2002,4629:24-30
[4] David F Welch.A Brief History of High-Power Semiconductor Laser.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUW ELECTRONICS,2000,6(6):1470-1477
[5] 黄德修.半导体光电子学.成都:电子科技大学出版社,1994:120-158
[6] P.Lacovara,H.Choi,C.A.Wang.Room temperature diode-pumped YB:YAG laser.IEEE Optical Letters,1991,16(14):32-34
[7] X.He,A.Ovtchinnikov,S.Yang.Efficient high power reliable InGaAs/AlGaAs (940nm) monolithic laser diode arrays[J].IEEE Electronics letters,1999,35(20):1739-1740
[8] C.A.Wang,S.H.Groves,New material for diode laser pumping of solid-state lasers[J].Journal of Quantum Electronics,1992,28(4):942-951
[9] Shawn A Hall,Ramon Lane,Han-chung Wang,et al.Assembly of laser-fiber arrays.JOURNAL OF LIGHTWAVE TECHNOLOGY,1994,12(10):1820-1826
[10] p Chanclon,M Thual,J Lostec,et al.Highly efficient collective coupling between laser diode array and lensed fibre ribbon.ELECTRONICS LETTERS,1998,34(3):273-274
[11] H Honmou and M Itoh.Optical coupling of laser diode array to singlemode-fibre array with heat-treated hemispherical micromens.ELECTRONICS LETTERS,1995,31(10):793-794
[12] David S Sumida,Alexander A Betin,Hans Bruesselbach.Diode-pumped Yb:YAG catches up with Nd:YAG[J].Laser Focus World,1995,35(6):63-70
[13] Yasukazu Izawa,Masanobu Yamanaka and Sadao Nakai.Development of high-power DPSSL and its application.CLEO Pacific Rim’99/213
[14] James J,Coleman,Kevin J.Threshold current density in strained layer InGaAs/GaAs quantum well heterostructure lasers.IEEE Journal of Quantum Electronics.1992,28(10):1983-1989
[15] 张丽.新型半导体激光器热特性的研究及常规量子阱激光器的优化.硕士论文.北京:北京工业大学,2002
[16] 杜宝勋.半导体激光器原理.北京:兵器工业出版社,2001:264-269
[17] 曹玉璋.传热学.北京:北京航空航天大学出版社,2001:1-5
[18] 刘恩科,朱秉升,罗晋升,等.半导体物理学.北京:国防工业出版社,1994
[19] 蔡伯荣,陈铮,刘旭.半导体激光器.北京:电子工业出版社,1995
[20] 李家泽.光电子学基础.北京:北京理工大学出版社,1998
[21] Guo Changzhi.Semiconductor quantum well lasers.Guangzhou,1991
[22] 陈国鹰,马祖光,孙以材.量子阱激光器中的热分布对光输出特性的影响.河北工业大学学报, 1999,28(1):42-46
[23] 陈国鹰.高功率量子阱激光器及其诸特性相互耦合影响的研究.博士论文.哈尔滨:哈尔滨工业大学,1998
[24] Ali M.Drawish,Andrew Bayba,and H. Alfred Hung.Thermal Resistance Calculation of AlGaN/GaN on SiC Devices.IEEE MTT-S Digest,2004:2039-2042
[25] 杨强生.高等传热学.上海:上海交通大学出版社,1996
[26] H.Ribot,K.W.Lee,R.J.Simes.Disordering of GaAs/AlGaAs multiple quantum well structure by thermal annealing for monolithic integrationof laser and phase modulator.Applied Physics Letter.1989,55(7):672-674
[27] V.V Bezotosnyi,Kh Kumykov,N.V Markova.Ultimate output parameters of laser diode bars and arrays[J].Quantum Electronics,1997,Vol27:481-484
[28] R.P.Sarzala,W.Nakawaski.Thermal properties of buried heterostructure diode lasers [J].Journal of Optoelectronics,1993,97(8):705-725
[29] R.Puchert,A.Barwolff,M.VoB.Influence of the mounting configuration on the transient thermal behavior of high power laser diode arrays.1997Electronic Components and Technology Conference,1254-1259
[30] Y.Lu,S.Zhang,J.Cheng.Theoretical study of transient thermal conduction and temperature distribution generated by pulsed laser.Applied Physics,2000,70(4):85-90
[31] Roland Puchert,Artur Barwollf,Michael Vob.Transient thermal behavior of high power diode laser arrays.IEEE Transactions on Components,2000,23(1):95-100
[32] Massayuki Ishikawa,Hideo Shiozawa,Kazuhiko Itaya.Temperature dependence of the threshold current for InGaAlP visible laser Diodes[J].IEEE Journal of Quantum Electronics.1991,27(1):23-28
[33] 孔祥谦.有限单元法在传热学中的应用,北京:科学出版社,1998
[34] Kimio Shigihara.High power operation of broad area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping.IEEE Journal of Quantum Electronics. 1991,27(6):1537-1543
[35] 唐兴伦,范群波,张朝晖等.ANSYS 工程应用教程-热与电磁学篇.北京:中国铁道出版社,2003
[36] 谭建国.使用 ANSYS6.0 进行有限元分析.北京:北京大学出版社,2002
[37] 嘉木工作室.NSYS5.7 有限元实例分析教程.北京:机械工业出版社,2002
[38] Kazuhiko Nemoto , Masamichi Ogawa , Toshimass Kobayashi et al . hybtid-integrated two-dimensional (3*24) high-efficiency high-power laser diode array . CLEO/PACIFIC RIM/THURSDAY AFTERNOON.THO2:1545
[39] A.Syrbu,A.Mereutza,G.Suruceau et al.AlGaAs/InGaAs buried heterostructure laser diode for pumping solid state lasers.IEEE 1995:453-456
[40] J.W.Tomm,A.Barwolff,R.Puchert et al.heating of high-power laser diode arrays:from temperature data to power management and failure mechanism.CLEO’98/WEDNESDAY AFTERNOON,CWF21
[41] J.F.P Dabkowski,temperature profile along the cavity axis of power quMmtum well lasers during operation,1994,Appl.Phys.Lett,64(1):13-15
[42] W C.Tang,Raman mincroprobe study of the time development of AlGaAs single quantum well lasers facet temperature on route to catastrophic breakdown,1991,Appl.Phys.Lett,58(6):557-559
[43] C.H.Henry.catastrophic damage of Ga1-xAlxAs double-heterostructure laser material.Journal of Applied Physics,1979,50(5):3721-3732
[44] J.M.Rommel.photoluminescence measurment of the facet temperature of 1W gain-guided AlGaAs/GaAs lasers diodes.Journal of Applied Physics,1996,80(11):6547-6549
[45] Hans.Brugger.mapping of local temperatures on mirrors of AlGaAs/GaAs laser Diodes.Appl Phys Lett,1990,56(11):1049-1051
[46] 谢红云.高占空比(20%)大功率激光器阵列设计制作及其热特性分析.硕士论文.天津:河北工业大学,2003
[47] Kimio Shigihara.High power operation of broad area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping.IEEE Journal of Quantum Electronics.1991,27(6):1537-1543
[48] John G.Endriz,Mitral Vakili,Gerald S.Brower.High power diode laser arrays[J].IEEE Journal of quantum electronics,1992,28(4):952-965
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