富硅氮化硅薄膜体系电致发光器件研究
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摘要
随着半导体芯片集成度的进一步提高,以电子为信息载体的金属互联存在的RC延迟及热耗散成为制约超大规模集成电路发展的瓶颈。采用光互连代替电互联将有效解决这一问题,而寻找高效的硅基光源更是解决这一问题的关键。近年来,富硅氮化硅(SiN_x)薄膜由于其良好的发光特性及制备工艺与传统CMOS工艺兼容而受到广泛关注,成为硅基光源的候选材料之一。
本论文研究了富硅氮化硅薄膜体系的电致发光器件,包括基于单层SiN_x薄膜、SiN_x/a-Si/SiN_x三明治结构薄膜以及引入SiO_2电子加速层的SiO_2 on SiN_x结构薄膜的三种电致发光器件,取得以下主要成果:
(1)SIN_x薄膜电致发光源于禁带内的缺陷态能级的复合,发光峰位位于600nm处,主要来自于E_c→≡Si~-之间的电子辐射跃迁;相同的输入功率下,采用p~-Si作为衬底能够提高器件的EL强度,采用p~+/p Si作为衬底能够有效降低器件的开启电压;经三步热处理后器件的开启电压降低。
(2)对于SiN_x/a-Si/SiN_x三明治结构薄膜,当a-Si层沉积时间为60s时,高温热处理后器件的开启电压降低且EL积分强度提高。可能原因是a-Si层经过高温热处理后形成了颗粒尺寸较小的Si的非晶纳米颗粒,有利于载流子注入SiN_x薄膜,载流子的浓度提高,一定程度上使得电子与空穴的复合效率提高,EL发光出现增强。
(3)SiO_2电子加速层的引入能够提高器件的EL强度,原因在于经SiO_2层加速后的高能电子进入发光层后,将对SiN_x进行轰击离化,激发出更多的载流子,导带上的电子浓度提高,电子与空穴的注入水平趋于平衡,使得电子与空穴的复合效率提高;EL强度与SiO_2电子加速层的厚度有关,当SiO_2层厚度减小为25nm,EL强度进一步增强,说明一定厚度范围内,在保证电子加速作用的同时,SiO_2层厚度的减小有利于电子的注入。
With the further improvement of the integration level of semiconductor chip, the traditional electrical interconnection becomes a bottleneck for the development of ultra large scale integrated circuits. Light interconnection is supposed to be an effective solution. The key point is to seek for an efficient silicon-based light source. For the past few years, silicon-rich silicon nitride (SiN_x) has received extensive attention as a candidate material for silicon-based light source because of its good luminescence properties and compatible with CMOS techniques.
In this thesis, three structrure of the light-emitting devices (LEDs) based on SiNx thin films were investigated. The main results are summarized as follows:
(1) Electroluminescence (EL) of light-emitting devices consited by single SiNx film wasfound centered at 600nm, which originated from the electronic transitions of E_c→≡Si~- iscentered at 600nm. Using a lightly doped p type silicon wafer as substrate would enhance the EL intensity of LEDs at the same input power, while an epitaxial p-type silicon wafer would reduce the turn on voltage.
(2) Current of LEDs consited by SiN_x/a-Si/SiN_x film is increased at the same forward bias after post-annealing, meanwhile, the EL integrated intensity is enhanced at the same current density when the deposition time of a-Si layer is 60 seconds. Small amorphous Si clusters which are favorable to the tunneling of carriers formed during the annealing process, result in the raise of electronic injection and recombination efficiency of electronic-hole pairs finally.
(3) EL intensity is significantly enhanced while SiO_2 electron accelerating layer is introduced to LEDs based on SiN_x film owing to the impact ionization process which inspire more carriers and result in the trend to balance the electron and hole injection. Moreover, EL intensity is closely related to the thickness of SiO_2 layer, the thinner the easier to inject the high energy electrons.
本论文研究了富硅氮化硅薄膜体系的电致发光器件,包括基于单层SiN_x薄膜、SiN_x/a-Si/SiN_x三明治结构薄膜以及引入SiO_2电子加速层的SiO_2 on SiN_x结构薄膜的三种电致发光器件,取得以下主要成果:
(1)SIN_x薄膜电致发光源于禁带内的缺陷态能级的复合,发光峰位位于600nm处,主要来自于E_c→≡Si~-之间的电子辐射跃迁;相同的输入功率下,采用p~-Si作为衬底能够提高器件的EL强度,采用p~+/p Si作为衬底能够有效降低器件的开启电压;经三步热处理后器件的开启电压降低。
(2)对于SiN_x/a-Si/SiN_x三明治结构薄膜,当a-Si层沉积时间为60s时,高温热处理后器件的开启电压降低且EL积分强度提高。可能原因是a-Si层经过高温热处理后形成了颗粒尺寸较小的Si的非晶纳米颗粒,有利于载流子注入SiN_x薄膜,载流子的浓度提高,一定程度上使得电子与空穴的复合效率提高,EL发光出现增强。
(3)SiO_2电子加速层的引入能够提高器件的EL强度,原因在于经SiO_2层加速后的高能电子进入发光层后,将对SiN_x进行轰击离化,激发出更多的载流子,导带上的电子浓度提高,电子与空穴的注入水平趋于平衡,使得电子与空穴的复合效率提高;EL强度与SiO_2电子加速层的厚度有关,当SiO_2层厚度减小为25nm,EL强度进一步增强,说明一定厚度范围内,在保证电子加速作用的同时,SiO_2层厚度的减小有利于电子的注入。
With the further improvement of the integration level of semiconductor chip, the traditional electrical interconnection becomes a bottleneck for the development of ultra large scale integrated circuits. Light interconnection is supposed to be an effective solution. The key point is to seek for an efficient silicon-based light source. For the past few years, silicon-rich silicon nitride (SiN_x) has received extensive attention as a candidate material for silicon-based light source because of its good luminescence properties and compatible with CMOS techniques.
In this thesis, three structrure of the light-emitting devices (LEDs) based on SiNx thin films were investigated. The main results are summarized as follows:
(1) Electroluminescence (EL) of light-emitting devices consited by single SiNx film wasfound centered at 600nm, which originated from the electronic transitions of E_c→≡Si~- iscentered at 600nm. Using a lightly doped p type silicon wafer as substrate would enhance the EL intensity of LEDs at the same input power, while an epitaxial p-type silicon wafer would reduce the turn on voltage.
(2) Current of LEDs consited by SiN_x/a-Si/SiN_x film is increased at the same forward bias after post-annealing, meanwhile, the EL integrated intensity is enhanced at the same current density when the deposition time of a-Si layer is 60 seconds. Small amorphous Si clusters which are favorable to the tunneling of carriers formed during the annealing process, result in the raise of electronic injection and recombination efficiency of electronic-hole pairs finally.
(3) EL intensity is significantly enhanced while SiO_2 electron accelerating layer is introduced to LEDs based on SiN_x film owing to the impact ionization process which inspire more carriers and result in the trend to balance the electron and hole injection. Moreover, EL intensity is closely related to the thickness of SiO_2 layer, the thinner the easier to inject the high energy electrons.
引文
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[2] J. W. Goodman. Optical interconnections for VLSI systems. Proceeding of IEEE. 1984, 72, 850-866.
[3] http://en.wikipedia.org/wiki/Silicon_photonics.
[4] D.A.G.Bruggeman, Ann. Physik. 1935, 24, 636.
[5] http://techresearch.intel.com/articles/Tera-Scale/1419.htm.
[6] A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia and J. E. Bowers. Electrically pumped hybrid AlGaInAs-silicon evanescent laser. Opt Express. 2006, 14 (20), 9203-9210.
[7] X. K. Sun, A. Zadok, M. J. Shearn, K. A. Diest, A. Ghaffari, H. A. Atwater, A. Scherer and A. Yariv. Electrically pumped hybrid evanescent Si/InGaAsP lasers. Opt Lett. 2009, 34 (9), 1345-1347.
[8] S. S. Iyer and Y. H. Xie. Light Emission from Silicon. Science. 1993, 260 (5104), 40-46.
[9] L. Pavesi. Routes toward silicon-based lasers. Materials Today. 2005, 8 (1), 18-25.
[10] L. T. Canham. Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers. Appl Phys Lett. 1990, 57 (10), 1046-1048.
[11] J. X. JM Shainline. Optics and Photonics News. 2008, May, 35-39.
[12] N. M. Park, T. S. Kim and S. J. Park. Band gap engineering of amorphous silicon quantum dots for light-emitting diodes. Applied Physics Letters. 2001, 78 (17), 2575-2577.
[13] J. F. Liu, X. C. Sun, L. C. Kimerling and J. Michel. Direct-gap optical gain of Ge on Si at room temperature.Optics Letters. 2009, 34 (11), 1738-1740.
[14] J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling and J. Michel. Ge-on-Si laser operating at room temperature. Opt. Lett. 2010, 35 (5), 679-681.
[15] J. M. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz and F. Capasso. Point defect engineered Si sub-bandgap light-emitting diode. Optics Express. 2007, 15 (11), 6727-6733.
[16] Y. Yasutake, J. Igarashi, N. Tana-ami and S. Fukatsu. An electric-field-active 1377-nm narrow-line Si light-emitting diode at 150 K. Optics Express. 2009, 17 (19), 16739-16744.
[17] M. Jamei, F. Karbassian, S. Mohajerzadeh, Y. Abdi, M. D. Robertson and S. Yuill. The preparation of nanocrystalline silicon by plasma-enhanced hydrogenation for the fabrication of light-emitting diodes. Ieee Electron Device Letters. 2007, 28 (3), 207-210.
[18] G. R. Lin, C. J. Lin and H. C. Kuo. Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array. Applied Physics Letters. 2007, 91 (9).
[19] T.-S. K. N.-M. Park, and S.-J. Park. Appl. Phys. Lett. 2001, 78, 2575.
[20] T.-C. W. J.-J. Wu, and C.-C. Yu. Adv. Mater. sWeinheim, Ger.d. 2002, 12, 1643.
[21] T. P. K. Lutervá, I. Mikulskas, R. Tomasiuas, D.Muller, J.-J. Grob, J.-L. Rehspringer, and B. J. H(o|¨)nerlage. J.Appl. Phys. 2002,91,2896.
[22] K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung and J. H. Shin. High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer. Applied Physics Letters. 2005, 86 (7).
[23] R. Huang, K. J. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Y. Ma and X. F. Huang. Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films. Applied Physics Letters. 2006,89 (22).
[24] R. Huang, K. J. Chen, P. G. Han, H. P. Dong, X. Wang, D. Y. Chen, W. Li, J. Xu, Z. Y. Ma and X. F. Huang. Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices.Applied Physics Letters.2007,90(9).
[25]K.C.Min Dai,Xinfan Huang,et al.Formation and charging effect of Si nanocrystals in a-SiNx/a-Si/a-SiNx structures.Journal of Applied Physics.2004,95(2),640-645.
[26]J.Warga,R.Li,S.N.Basu and L.Dal Negro.Electroluminescence from silicon-rich nitride/silicon superlattice structures.Appl Phys Lett.2008,93(15).
[27]J.Zhou,G.R.Chen,Y.Liu,J.Xu,T.Wang,N.Wan,Z.Y.Ma,W.Li,C.Song and K.J.Chen.Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures.Optics Express.2009,17(1),156-162.
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