溶胶—凝胶法制备ZnO:Sn(TZO)透明导电薄膜及其性能研究
|
摘要
透明导电氧化物薄膜由于具有良好的电学性质和光学性质已被广泛应用于透明电极、液晶显示器、太阳能电池、防静电涂层以及各种光电设备中。目前,透明导电氧化物薄膜主要包括SnO2、In2O3、ZnO及其氧化物的掺杂体系。现在应用最广泛的透明导电氧化物薄膜是ITO,但因为其有毒、价格昂贵以及在氢等离子体中不稳定等缺点,人们开始寻求新的材料来代替它。而掺杂的ZnO基薄膜价格低廉,在氢等离子体中稳定性高,同时具有与ITO薄膜相比拟的光电性能,已成为替代ITO透明导电薄膜的研究热点材料。
本文采用溶胶-凝胶旋涂法在普通玻璃载玻片上成功的制备出了低电阻率和在可见光范围内高透射率的ZnO:Sn (TZO)透明导电薄膜。用二水合醋酸锌(Zn(CH3COO)2·2H2O)作为前躯体,乙二醇甲醚(CH3OCH2CH2OH)作为溶剂,乙醇胺(HOCH2CH2NH2)作为稳定剂,五水四氯化锡(SnCl4·5H2O)作为掺杂剂。通过系统的实验确定了用溶胶-凝胶法制备最佳光电性能的TZO导电薄膜的具体参数值：溶胶浓度0.5 M、Sn掺杂浓度3 at.%、旋涂层数为8层、干燥温度300℃、热处理温度500℃、在-15℃环境中快速冷却。制备的TZO在可见光范围内的平均透光率为85%以上,最低电阻率可达8.2×10-1Ω·cm。
我们分别利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针以及紫外-可见分光光度计(UV-VIS)等手段,系统的研究了Sn掺杂浓度、热处理温度和溶胶浓度对TZO薄膜的晶体结构、表面形貌、电学性能和光学性能的影响。研究结果表明：TZO薄膜为六角纤锌矿结构,具有C轴择优取向。薄膜的Sn掺杂浓度、热处理温度和溶胶浓度对薄膜的光电性能都有不同程度的影响。
Transparent conductive oxide thin films are widely used in transparent electrodes, liquid crystal displays, solar cells, anti-static coatings and various electrical and optical devices. It is because of transparent conductive oxide thin films exhibit outstanding optical and electrical properties. At present, transparent conductive oxide thin films include chiefly SnO2、In2O3、ZnO and their dopant systems. Nowadays, indium tin oxide films (ITO) has been widely studied. However, it has some problems such as high cost, toxicity and low stability to hydrogen plasma. So it is necessary to search for new materials. Doped ZnO thin films are a potential candidate for ITO films, which is not only because of their comparable optical and electrical properties to ITO films, but also because of their low price and their higher thermal and chemical stability under the exposure to hydrogen plasma.
In this paper, the Sn-doped ZnO (TZO) thin films are deposited on glass substrate by Sol-Gel spin-coating method. Zinc acetate dihydrate (Zn(CH3COO)2.2H2O) is used as a starting material; 2-methoxyethanol and monoethanolamine are used as solvent and stabilizer respectively; the dopant source of tin is tin chloride hexahydrate. The optimum technological parameters for preparing TZO thin films with the best optical and electrical properties are:the sol concentration is 0.5 M, the dopant concentration is 3 at.%, the drying temperature is 300℃, the heat treatment temperature is 500℃, and the cooling condition is-15℃. The resistivity attains 8.2×10-1Ω·cm and the average transmittance attains 85%in the visible range.
The structural, morphological, optical and electrical properties of TZO thin films are investigated by X-ray diffraction (XRD)、scanning electron microscope (SEM)、four-point probe method and UV-VIS spectrophotometer respectively. The results prove that the films are all polycrystalline with a structure of ZnO hexagonal wurtzite type and a preferred orientation of c-axis. The electrical and optical properties of the TZO thin films are influenced by the sol concentration, the dopant concentration and the heat treatment temperature.
本文采用溶胶-凝胶旋涂法在普通玻璃载玻片上成功的制备出了低电阻率和在可见光范围内高透射率的ZnO:Sn (TZO)透明导电薄膜。用二水合醋酸锌(Zn(CH3COO)2·2H2O)作为前躯体,乙二醇甲醚(CH3OCH2CH2OH)作为溶剂,乙醇胺(HOCH2CH2NH2)作为稳定剂,五水四氯化锡(SnCl4·5H2O)作为掺杂剂。通过系统的实验确定了用溶胶-凝胶法制备最佳光电性能的TZO导电薄膜的具体参数值：溶胶浓度0.5 M、Sn掺杂浓度3 at.%、旋涂层数为8层、干燥温度300℃、热处理温度500℃、在-15℃环境中快速冷却。制备的TZO在可见光范围内的平均透光率为85%以上,最低电阻率可达8.2×10-1Ω·cm。
我们分别利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针以及紫外-可见分光光度计(UV-VIS)等手段,系统的研究了Sn掺杂浓度、热处理温度和溶胶浓度对TZO薄膜的晶体结构、表面形貌、电学性能和光学性能的影响。研究结果表明：TZO薄膜为六角纤锌矿结构,具有C轴择优取向。薄膜的Sn掺杂浓度、热处理温度和溶胶浓度对薄膜的光电性能都有不同程度的影响。
Transparent conductive oxide thin films are widely used in transparent electrodes, liquid crystal displays, solar cells, anti-static coatings and various electrical and optical devices. It is because of transparent conductive oxide thin films exhibit outstanding optical and electrical properties. At present, transparent conductive oxide thin films include chiefly SnO2、In2O3、ZnO and their dopant systems. Nowadays, indium tin oxide films (ITO) has been widely studied. However, it has some problems such as high cost, toxicity and low stability to hydrogen plasma. So it is necessary to search for new materials. Doped ZnO thin films are a potential candidate for ITO films, which is not only because of their comparable optical and electrical properties to ITO films, but also because of their low price and their higher thermal and chemical stability under the exposure to hydrogen plasma.
In this paper, the Sn-doped ZnO (TZO) thin films are deposited on glass substrate by Sol-Gel spin-coating method. Zinc acetate dihydrate (Zn(CH3COO)2.2H2O) is used as a starting material; 2-methoxyethanol and monoethanolamine are used as solvent and stabilizer respectively; the dopant source of tin is tin chloride hexahydrate. The optimum technological parameters for preparing TZO thin films with the best optical and electrical properties are:the sol concentration is 0.5 M, the dopant concentration is 3 at.%, the drying temperature is 300℃, the heat treatment temperature is 500℃, and the cooling condition is-15℃. The resistivity attains 8.2×10-1Ω·cm and the average transmittance attains 85%in the visible range.
The structural, morphological, optical and electrical properties of TZO thin films are investigated by X-ray diffraction (XRD)、scanning electron microscope (SEM)、four-point probe method and UV-VIS spectrophotometer respectively. The results prove that the films are all polycrystalline with a structure of ZnO hexagonal wurtzite type and a preferred orientation of c-axis. The electrical and optical properties of the TZO thin films are influenced by the sol concentration, the dopant concentration and the heat treatment temperature.
引文
[1]王金库,陈军,林薇薇.透明导电聚苯胺复合膜的研究进展.材料科学与工程.2001,1：121-124.
[2]韩雪,夏慧,吴丽君.透明导电膜及靶材.电子元件与材料.1998,17：30-35.
[3]Weijtens C. H. L., Van Loon P. A. C., Influence of annealing on the optical properties of indium tin oxide. Thin Solid Films.1991,196:1-10.
[4]Nagatomo T., Maruta Y., Omoto O., Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobility. Thin Solid Films.1990,192:17-25.
[5]方国家,刘黎祖,张杰,姚凯伦Sol-Gel法制备ZrO2-SnO2薄膜的常温气敏机理.材料研究学报.1997,11：357-361.
[6]田民波,刘德令.薄膜科学与技术手册.北京：机械工业出版社.1991：599-604.
[7]Nobuaki N. S., Koji T. C., Preparation of TiO2 thin film photocatalysts by dip coating using a highly viscous solvent. Journal of Sol-Gel Science and Technology.2001,22:23-31.
[8]Baik D. G., Cho S. M., Application of sol-gel derived films for ZnO/n-Si junction solar cells. Thin Solid Films.1999,354:227-231.
[9]Hong S. K., Hanada T. S., Ko H. J., et al. Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy:Zn-and O-polar ZnO films on Ga-palor GaN templates. Appl. Phys. Lett.,2000,77:3571-3573.
[10]Koch M. H., Hartmann A. J., Lamb R. N., et al. Self-texture in the initial stages of ZnO film growth. J. Phys. Chem. B,1997,101:8231-8236.
[11]王三坡,沈杰,章壮健,杨锡良,张群.新型透明导电ZnO:Mo薄膜.真空科技与技术学报.2008,28：1-5.
[12]Ohtomo A., et al. Mg1-xZnxO as a Ⅱ- Ⅵ wide gap semiconductor alloy. Appl. Phys. Lett.,1998,72:2466-2468.
[13]Tabuchi K., Wenas W. W., Optimization of ZnO films for amorphous silicon solar cells. Jap. Appl. Phys.,1993,32:3764-3769.
[14]Look D. C., Reynolds D. C., Hemsky J. W., et al. Production and annealing of electron irradiation damage in ZnO. Appl. Phys. Lett.,1999,75:811-813.
[15]段学臣,杨向萍.新材料ITO薄膜的应用和发展.稀有金属与硬质合金.1999,138：58-60.
[16]康昌鹤,康省五.气、湿敏传感器件及其应用.北京：科学出版社.1998.
[17]Minami T., Nanto H., Takata S., Highly conductive and transparent zinc oxide films prepared by r.f. magnetron sputtering under an applied external magnetic field. App. Phys. Lett.,1982,41:958-960.
[18]Jeong S. H., Lee J. W., Boo J. H., Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their structural, electrical and optical properties. Thin Solid Films,2006,435:78-82.
[19]方泽波,朋兴平,谭永胜等ZnO:Tb透明导电薄膜的制备及其特性研究.稀有金属.2004,28：502-504.
[20]吕建国,叶志镇.ZnO薄膜的最新研究进展.功能材料.2002,33：581-587.
[21]袁国栋,叶志镇,曾星嘉,吕建国等.直流反应磁控溅射Al,N共掺方法生长P型ZnO薄膜及其特性.半导体学报.2004,25：668-673.
[22]Hong R. J., Helming K., Jiang X., et al. Texture analysis of Al-doped ZnO thin films prepared by in-line reactive MF magnetron sputtering. Appl. Surf. Sci., 2004,226:378-386.
[23]郭爱云,薛亦渝,夏志林,朱选敏等.电子束蒸发沉积ZAO薄膜正交试验.半导体技术.2005,30：56-59.
[24]Ma Jin, Feng J., et al. Optical and electronic properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method. Thin Solid Film,1999, 357:98-101.
[25]Li W., Mao D. S., Zhang Z. H., Wang X., et al. ZnO/Zn phosphor thin films prepared by IBED. Surface and Coatings Technology,2000,128-129:346-350.
[26]Zhu Z. Q., Li A. Z., Molecular beam epitaxy of ZnO for photonic application. Functional Materials and Devices,1999,5:161-168.
[27]Shan F. K., Yu Y. S., Optical properties of pure and Al doped ZnO thin films fabricated with plasma produced by excimer laser. Thin Solid Films,2003,435:
174-178.
[28]Ortiz A., Falcony C., Hernandez A. J., et al. Photoluminescent characteristics of lithium-doped zinc oxide films deposited by spray pyrolysis. Thin Solid Film, 1997,293:103-107.
[29]Studenikin S. A., Golego N., Cocivera M., Fabrication of green and orange photo luminescent undoped ZnO films using spray pyrolysis. J. Appl. Phys.,1998, 794:2287-2294.
[30]Wang X. Q., Yang S. R., Wang J. Z., et al. Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition. J.Cryst. Growth,2001, 226:123-129.
[31]边超,姚宁,张兰,杨仕娥,张兵临.ZnO薄膜发光特性的研究进展.真空与低温.2003,9：113-118.
[32]黄剑锋.溶胶-凝胶原理与技术.北京：化学工业出版社.2005,9：13-16.
[33]朱冬生等.溶胶-凝胶法制备纳米薄膜的研究进展.材料导报.2003,9：53-55.
[34]洪新华,李保国.溶胶-凝胶法(Sol-gel)方法的原理与应用.天津师范大学学报.2001,21：5-6.
[35]Jae H. C., Hitoshi T., Tomoj K., et al. Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition. J. Cryst. Growth,2001,226:493-500.
[36]Jin B. J., Bae S. H., et al. Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition. Materials Science and Engineering B,2000,71:301-305.
[37]王德宪.溶胶-凝胶法的化学原理简述.玻璃.1998,25：35-38.
[38]何振杰.P型透明导电二氧化锡薄膜的制备及性能研究.浙江：浙江大学.2002.
[39]巩锋.溶胶-凝胶法制备AZO薄膜及性能研究.北京工业大学硕士学位论文.2003.
[40]Joshi R. N., Singh V. P., Mcclure J. C., Characteristics of indium tin oxide films deposited by r.f. magnetron sputtering. Thin Solid Films,1995,257:32-35.
[41]Choong H. Y., Itaru Y., Shigesato Y., Effects of tin concentrations on structural
characteristics and electro optical properties of tin-doped indium oxide films prepared by r.f. magnetron sputtering. Jpn. J. Appl. Phys.,1995,134:600-605.
[42]Chopra K. L., Major S., Pandya D. K., Transparent conductors-A status review. Thin Solid Films,1993,102:1-46.
[43]Tang Z. K., Wong G. K. L, Yu P., et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films. Appl. Phys. lett., 1998,72:3270
[44]赵谢群.透明导电氧化物薄膜研究现状与产业化进展.电子元件与材料.2000,19：40-41.
[45]Liu Y, Gorla C. R., Liang S., et al. Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD. Electron Mater,2000,29:69-74.
[46]Fu E. G., Zhuang D. M., Zhang G., et al. Substrate temperature dependence of the properties of ZAO thin films deposited by magnetron sputtering, Applied Surface Science,2003,217:88-94.
[47]Lee J. H., Lin p., et al. Zn1-xZrxO films prepared by Sol-gel process and its application in thin film transistors. Electrochemical and Solid State letters,2006, 9:117-120.
[48]Wang X. H., Shi J. L., Dai S. G., et al. A sol-gel method to prepare pure and gold colloid doped ZnO films. Thin Solid Films,2003,429:102-107.
[49]E.利弗森.材料的特征检测.北京：科学出版社.1998.
[50]吕建国,叶志镇,黄靖云等.退火处理对ZnO薄膜结晶性能的影响.半导体学报.2003,24：729-736.
[51]张有刚,张永祥,许恒先.电子材料现代分析概论.北京：国防工业出版社.1993.
[52]SX1 934型数字式四探针测试仪使用说明书.
[53]黄佳木.ZnO:Al透明导电薄膜的制备及其特性研究.电子元件与材料.2002,21：8-11.
[54]TU-1901型紫外-可见(UV-VIS)分光光度计说明书.
[55]杨南如.无机非金属材料测试方法.武汉：武汉工业大学出版社.1993：223-271.
[56]Lee H. W., Lau S. P., Wang Y. G., et al. Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique. J. Cryst. Growth,2004,268:596-601.
[57]Lu J. G., Fujit S., Kawaharamura T., et al. Carrier concentration dependence of band gap shift in n-type ZnO:Al films. J.Appl. Phys.,2007,101:83-105.
[2]韩雪,夏慧,吴丽君.透明导电膜及靶材.电子元件与材料.1998,17：30-35.
[3]Weijtens C. H. L., Van Loon P. A. C., Influence of annealing on the optical properties of indium tin oxide. Thin Solid Films.1991,196:1-10.
[4]Nagatomo T., Maruta Y., Omoto O., Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobility. Thin Solid Films.1990,192:17-25.
[5]方国家,刘黎祖,张杰,姚凯伦Sol-Gel法制备ZrO2-SnO2薄膜的常温气敏机理.材料研究学报.1997,11：357-361.
[6]田民波,刘德令.薄膜科学与技术手册.北京：机械工业出版社.1991：599-604.
[7]Nobuaki N. S., Koji T. C., Preparation of TiO2 thin film photocatalysts by dip coating using a highly viscous solvent. Journal of Sol-Gel Science and Technology.2001,22:23-31.
[8]Baik D. G., Cho S. M., Application of sol-gel derived films for ZnO/n-Si junction solar cells. Thin Solid Films.1999,354:227-231.
[9]Hong S. K., Hanada T. S., Ko H. J., et al. Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy:Zn-and O-polar ZnO films on Ga-palor GaN templates. Appl. Phys. Lett.,2000,77:3571-3573.
[10]Koch M. H., Hartmann A. J., Lamb R. N., et al. Self-texture in the initial stages of ZnO film growth. J. Phys. Chem. B,1997,101:8231-8236.
[11]王三坡,沈杰,章壮健,杨锡良,张群.新型透明导电ZnO:Mo薄膜.真空科技与技术学报.2008,28：1-5.
[12]Ohtomo A., et al. Mg1-xZnxO as a Ⅱ- Ⅵ wide gap semiconductor alloy. Appl. Phys. Lett.,1998,72:2466-2468.
[13]Tabuchi K., Wenas W. W., Optimization of ZnO films for amorphous silicon solar cells. Jap. Appl. Phys.,1993,32:3764-3769.
[14]Look D. C., Reynolds D. C., Hemsky J. W., et al. Production and annealing of electron irradiation damage in ZnO. Appl. Phys. Lett.,1999,75:811-813.
[15]段学臣,杨向萍.新材料ITO薄膜的应用和发展.稀有金属与硬质合金.1999,138：58-60.
[16]康昌鹤,康省五.气、湿敏传感器件及其应用.北京：科学出版社.1998.
[17]Minami T., Nanto H., Takata S., Highly conductive and transparent zinc oxide films prepared by r.f. magnetron sputtering under an applied external magnetic field. App. Phys. Lett.,1982,41:958-960.
[18]Jeong S. H., Lee J. W., Boo J. H., Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their structural, electrical and optical properties. Thin Solid Films,2006,435:78-82.
[19]方泽波,朋兴平,谭永胜等ZnO:Tb透明导电薄膜的制备及其特性研究.稀有金属.2004,28：502-504.
[20]吕建国,叶志镇.ZnO薄膜的最新研究进展.功能材料.2002,33：581-587.
[21]袁国栋,叶志镇,曾星嘉,吕建国等.直流反应磁控溅射Al,N共掺方法生长P型ZnO薄膜及其特性.半导体学报.2004,25：668-673.
[22]Hong R. J., Helming K., Jiang X., et al. Texture analysis of Al-doped ZnO thin films prepared by in-line reactive MF magnetron sputtering. Appl. Surf. Sci., 2004,226:378-386.
[23]郭爱云,薛亦渝,夏志林,朱选敏等.电子束蒸发沉积ZAO薄膜正交试验.半导体技术.2005,30：56-59.
[24]Ma Jin, Feng J., et al. Optical and electronic properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method. Thin Solid Film,1999, 357:98-101.
[25]Li W., Mao D. S., Zhang Z. H., Wang X., et al. ZnO/Zn phosphor thin films prepared by IBED. Surface and Coatings Technology,2000,128-129:346-350.
[26]Zhu Z. Q., Li A. Z., Molecular beam epitaxy of ZnO for photonic application. Functional Materials and Devices,1999,5:161-168.
[27]Shan F. K., Yu Y. S., Optical properties of pure and Al doped ZnO thin films fabricated with plasma produced by excimer laser. Thin Solid Films,2003,435:
174-178.
[28]Ortiz A., Falcony C., Hernandez A. J., et al. Photoluminescent characteristics of lithium-doped zinc oxide films deposited by spray pyrolysis. Thin Solid Film, 1997,293:103-107.
[29]Studenikin S. A., Golego N., Cocivera M., Fabrication of green and orange photo luminescent undoped ZnO films using spray pyrolysis. J. Appl. Phys.,1998, 794:2287-2294.
[30]Wang X. Q., Yang S. R., Wang J. Z., et al. Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition. J.Cryst. Growth,2001, 226:123-129.
[31]边超,姚宁,张兰,杨仕娥,张兵临.ZnO薄膜发光特性的研究进展.真空与低温.2003,9：113-118.
[32]黄剑锋.溶胶-凝胶原理与技术.北京：化学工业出版社.2005,9：13-16.
[33]朱冬生等.溶胶-凝胶法制备纳米薄膜的研究进展.材料导报.2003,9：53-55.
[34]洪新华,李保国.溶胶-凝胶法(Sol-gel)方法的原理与应用.天津师范大学学报.2001,21：5-6.
[35]Jae H. C., Hitoshi T., Tomoj K., et al. Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition. J. Cryst. Growth,2001,226:493-500.
[36]Jin B. J., Bae S. H., et al. Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition. Materials Science and Engineering B,2000,71:301-305.
[37]王德宪.溶胶-凝胶法的化学原理简述.玻璃.1998,25：35-38.
[38]何振杰.P型透明导电二氧化锡薄膜的制备及性能研究.浙江：浙江大学.2002.
[39]巩锋.溶胶-凝胶法制备AZO薄膜及性能研究.北京工业大学硕士学位论文.2003.
[40]Joshi R. N., Singh V. P., Mcclure J. C., Characteristics of indium tin oxide films deposited by r.f. magnetron sputtering. Thin Solid Films,1995,257:32-35.
[41]Choong H. Y., Itaru Y., Shigesato Y., Effects of tin concentrations on structural
characteristics and electro optical properties of tin-doped indium oxide films prepared by r.f. magnetron sputtering. Jpn. J. Appl. Phys.,1995,134:600-605.
[42]Chopra K. L., Major S., Pandya D. K., Transparent conductors-A status review. Thin Solid Films,1993,102:1-46.
[43]Tang Z. K., Wong G. K. L, Yu P., et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films. Appl. Phys. lett., 1998,72:3270
[44]赵谢群.透明导电氧化物薄膜研究现状与产业化进展.电子元件与材料.2000,19：40-41.
[45]Liu Y, Gorla C. R., Liang S., et al. Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD. Electron Mater,2000,29:69-74.
[46]Fu E. G., Zhuang D. M., Zhang G., et al. Substrate temperature dependence of the properties of ZAO thin films deposited by magnetron sputtering, Applied Surface Science,2003,217:88-94.
[47]Lee J. H., Lin p., et al. Zn1-xZrxO films prepared by Sol-gel process and its application in thin film transistors. Electrochemical and Solid State letters,2006, 9:117-120.
[48]Wang X. H., Shi J. L., Dai S. G., et al. A sol-gel method to prepare pure and gold colloid doped ZnO films. Thin Solid Films,2003,429:102-107.
[49]E.利弗森.材料的特征检测.北京：科学出版社.1998.
[50]吕建国,叶志镇,黄靖云等.退火处理对ZnO薄膜结晶性能的影响.半导体学报.2003,24：729-736.
[51]张有刚,张永祥,许恒先.电子材料现代分析概论.北京：国防工业出版社.1993.
[52]SX1 934型数字式四探针测试仪使用说明书.
[53]黄佳木.ZnO:Al透明导电薄膜的制备及其特性研究.电子元件与材料.2002,21：8-11.
[54]TU-1901型紫外-可见(UV-VIS)分光光度计说明书.
[55]杨南如.无机非金属材料测试方法.武汉：武汉工业大学出版社.1993：223-271.
[56]Lee H. W., Lau S. P., Wang Y. G., et al. Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique. J. Cryst. Growth,2004,268:596-601.
[57]Lu J. G., Fujit S., Kawaharamura T., et al. Carrier concentration dependence of band gap shift in n-type ZnO:Al films. J.Appl. Phys.,2007,101:83-105.