一维碳化硅纳米材料的制备与性能的基础研究
摘要
一维纳米材料具有新颖的物理、化学和生物特性以及在纳电子器件中的潜在应用，日益成为当今纳米研究领域中的热点。利用它不仅可以深入地理解低维材料的基本现象，更重要的是它可以作为功能模块来构筑纳米电子器件。在众多的半导体材料中，SiC半导体材料的禁带宽度大、击穿电场高、热导率大、饱和漂移速度高等特点使其在高频、高温、高功率、抗辐射等方面有良好的性能，被认为是新一代微电子器件和集成电路的半导体材料，因此研究SiC一维纳米半导体材料具有重要意义。目前国内外对SiC纳米线的研究还处于初步阶段，主要集中在两个方面：用不同的方法制备SiC纳米线；对SiC纳米线性能进行简单的表征，如光学，场发射等。但是目前制备SiC纳米线方法中主要存在以下缺点：产物量少，有金属催化剂颗粒的污染，成本高，合成时间长，制备当中有如SiH_4、CH_4等之类的剧毒易燃易爆危险气体潜在危险。因此，简单、批量和成本低廉制备SiC纳米线的方法对于其能否走向大规模应用具有重要的意义。
鉴于以上，本文主要利用新工艺和新方法高质量地、简单和可控制性大规模地合成了β-SiC纳米线，通过XRD、SEM、TEM、HRTEM等分析测试方法，系统地研究了纳米材料的形貌、尺寸、结构和性能，并提出了生长机制，最后对β-SiC纳米线的应用做了初步应用研究。通过这些工作，我们就为实现β-SiC纳米材料的功能化应用打下基础。论文主要包括以下几个方面：
首先采用自行设计的高频感应加热设备来合成β-SiC纳米线，实验时将系统气压保持在50～100Torr，1450℃时加热SiO粉末15min。实验结束后，在活性碳纤维的表面得到了一层亮蓝色的物质(β-SiC纳米线)。此种方法具有简单、快速等优点，可以用来合成其它半导体纳米材料。制备出来的SiC纳米线性能均一、产率较高、表面光滑，结构为
One-dimensional (1D) nanostructures have become the focus of intensive research owing to their novel physical, chemical, and biological properties as well as the potential applications in nanodevices. It was of not only their importance in understanding fundamental physical phenomenon, e.g. electron transportation, but also the promising applications such as interconnects and functional building blocks for novel electrical, optical and magnetic nanodevices. Moreover, large-scale, cost-effective, simple and practical synthesis and assembly of 1D nanomaterials is of importance for the fundamental research and application. Among the semiconductor materials which are suitable for high frequency, high temperature, high power and radio-resistance applications, silicon carbide (SiC) holds the most promising because of its wide energy bandgap, high breakout field, high thermal conductivity and high drift velocity. The combination of these properties shows promise for next generation microelectronic devices and ICs fabricated in SiC. The study of SiC material is of great importance to future nanoscale electronic devices as well as fundamental research. At present, the research on SiC nanowire is just in a tentative stage, and has been focused on two aspects: a simple and easy preparation of SiC nanowires, and the testing of SiC nanowires properties of optical, filed emission and so on. However, these products are available at the cost of either high-purity or expensive CNT or the hazardous and easily explosive silicon (carbon) precursor of SiH_4 or CH_4. In addition, the synthesized materials were low yield and purity and time-consuming. Thus, large-scale synthesis of β-SiC nanowires still remain a challenge to be consider for above mentioned disadvantage. Hence, the simple, large quantity and low cost
鉴于以上，本文主要利用新工艺和新方法高质量地、简单和可控制性大规模地合成了β-SiC纳米线，通过XRD、SEM、TEM、HRTEM等分析测试方法，系统地研究了纳米材料的形貌、尺寸、结构和性能，并提出了生长机制，最后对β-SiC纳米线的应用做了初步应用研究。通过这些工作，我们就为实现β-SiC纳米材料的功能化应用打下基础。论文主要包括以下几个方面：
首先采用自行设计的高频感应加热设备来合成β-SiC纳米线，实验时将系统气压保持在50～100Torr，1450℃时加热SiO粉末15min。实验结束后，在活性碳纤维的表面得到了一层亮蓝色的物质(β-SiC纳米线)。此种方法具有简单、快速等优点，可以用来合成其它半导体纳米材料。制备出来的SiC纳米线性能均一、产率较高、表面光滑，结构为
One-dimensional (1D) nanostructures have become the focus of intensive research owing to their novel physical, chemical, and biological properties as well as the potential applications in nanodevices. It was of not only their importance in understanding fundamental physical phenomenon, e.g. electron transportation, but also the promising applications such as interconnects and functional building blocks for novel electrical, optical and magnetic nanodevices. Moreover, large-scale, cost-effective, simple and practical synthesis and assembly of 1D nanomaterials is of importance for the fundamental research and application. Among the semiconductor materials which are suitable for high frequency, high temperature, high power and radio-resistance applications, silicon carbide (SiC) holds the most promising because of its wide energy bandgap, high breakout field, high thermal conductivity and high drift velocity. The combination of these properties shows promise for next generation microelectronic devices and ICs fabricated in SiC. The study of SiC material is of great importance to future nanoscale electronic devices as well as fundamental research. At present, the research on SiC nanowire is just in a tentative stage, and has been focused on two aspects: a simple and easy preparation of SiC nanowires, and the testing of SiC nanowires properties of optical, filed emission and so on. However, these products are available at the cost of either high-purity or expensive CNT or the hazardous and easily explosive silicon (carbon) precursor of SiH_4 or CH_4. In addition, the synthesized materials were low yield and purity and time-consuming. Thus, large-scale synthesis of β-SiC nanowires still remain a challenge to be consider for above mentioned disadvantage. Hence, the simple, large quantity and low cost
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