磁控溅射制备B-C-N薄膜及其表征
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摘要
采用射频磁控溅射方法,分别以石墨靶材和甲烷气体作为碳源,通过调控石墨靶功率、基片溅射温度、基片的负偏压,CH4/N2/Ar气体流量比一系列实验参数,在硅基片上沉积非晶B-C-N薄膜。利用傅里叶变换红外光谱(FTIR),原子力显微镜(AFM), X射线衍射(XRD),台阶仪,纳米压痕测试仪等表征手段,分别对B-C-N薄膜的表面形貌粗糙度,成键,沉积速率以及硬度进行分析。主要工作及分析有以下四点：
(1)通过红外光谱测试表明,无论是石墨靶还是甲烷气体作为碳源时,沉积的B-C-N薄膜中B、C、N原子都两两成键。说明我们溅射沉积出来的B-C-N薄膜中的原子实现了原子级结合,是化合物而非混合物。通过分析得出结论：当碳源为石墨靶时：增加石墨靶的功率和提高沉积温度都有助于B-C-N薄膜中各种化学键(B-C、C-N、B-N、C=C和C=N)的形成；当碳源为甲烷时：增加甲烷的流量同样有助于B-C、C-N、B-N、C=C和C=N化学键的形成。
(2)通过原子力测试表明,我们沉积的B-C-N薄膜表面形貌都比较平整致密,方均根(RMS)粗糙度都相对较小。当碳源为石墨时：随着石墨靶溅射功率或溅射温度的增加,薄膜的致密度和方均根(RMS)粗糙度都越来越好：当碳源为甲烷时也得出同样的结果。
(3)通过台阶仪测试表明,当碳源为石墨时：随着溅射功率的增加薄膜的厚度逐渐增加；给基片加负偏压时由于随着偏压的增加,对基片的反溅射作用逐渐增强反而影响了沉积速率。当碳源为甲烷时：随着甲烷流量的增加,薄膜的厚度增加相应的沉积速率也增加;而随着氮气流量的增加,薄膜的厚度先增加后减小。
(4)通过纳米压痕测试表明,制备的薄膜硬度比较低,对基片进行研磨预处理并不能改善B-C-N薄膜的硬度。
By changing processing parameters, including sputtering power of graphite target, temperature, bias voltage and gas flow rate, amorphous B-C-N thin films were synthesized on silicon substrate via RF magnetron sputtering and Carbon target and CH4 gas were used as sputtering original source, respectively. The structure, morphology, film thickness, and hardness of B-C-N films were measured by FTIR, AFM, XRD, steps instrument and nanoindentation. In this study, our main work is as follows:
(1) Whether Carbon target and CH4 gas were used as sputtering original source, FTIR spectra reveal that all these synthesized B-C-N films are atomic-level hybrids composed of B, C and N atoms. Through the analysis conclude, when carbon source is graphite target, various chemical bonds can be enhanced by increasing the sputtering power of graphite target or increasing the substrate temperature; when carbon source is CH4 gas, various chemical bonds can also be enhanced by increasing CH4 flow.
(2) FTIR spectra show that all the samples are atomic-level compounds which were composed of B, C and N atoms. From the results, when carbon source is graphite target, chemical bonds enhanced as increasing the sputtering power of graphite target or substrate temperature; when carbon source is CH4 gas, surface morphology of B-C-N thin films become better and better by increasing CH4 flow.
(3) Steps instrument curve reveal change rule of film thickness by adjusting a series of experimental parameters when Carbon target and CH4 gas were used as sputtering original source, respectively.
(4) The results of nano-indentation tests indicated that the hardness of as-deposited B-C-N thin film has slightly increased, although the deposition substrates have been pretreated for abrasion.
(1)通过红外光谱测试表明,无论是石墨靶还是甲烷气体作为碳源时,沉积的B-C-N薄膜中B、C、N原子都两两成键。说明我们溅射沉积出来的B-C-N薄膜中的原子实现了原子级结合,是化合物而非混合物。通过分析得出结论：当碳源为石墨靶时：增加石墨靶的功率和提高沉积温度都有助于B-C-N薄膜中各种化学键(B-C、C-N、B-N、C=C和C=N)的形成；当碳源为甲烷时：增加甲烷的流量同样有助于B-C、C-N、B-N、C=C和C=N化学键的形成。
(2)通过原子力测试表明,我们沉积的B-C-N薄膜表面形貌都比较平整致密,方均根(RMS)粗糙度都相对较小。当碳源为石墨时：随着石墨靶溅射功率或溅射温度的增加,薄膜的致密度和方均根(RMS)粗糙度都越来越好：当碳源为甲烷时也得出同样的结果。
(3)通过台阶仪测试表明,当碳源为石墨时：随着溅射功率的增加薄膜的厚度逐渐增加；给基片加负偏压时由于随着偏压的增加,对基片的反溅射作用逐渐增强反而影响了沉积速率。当碳源为甲烷时：随着甲烷流量的增加,薄膜的厚度增加相应的沉积速率也增加;而随着氮气流量的增加,薄膜的厚度先增加后减小。
(4)通过纳米压痕测试表明,制备的薄膜硬度比较低,对基片进行研磨预处理并不能改善B-C-N薄膜的硬度。
By changing processing parameters, including sputtering power of graphite target, temperature, bias voltage and gas flow rate, amorphous B-C-N thin films were synthesized on silicon substrate via RF magnetron sputtering and Carbon target and CH4 gas were used as sputtering original source, respectively. The structure, morphology, film thickness, and hardness of B-C-N films were measured by FTIR, AFM, XRD, steps instrument and nanoindentation. In this study, our main work is as follows:
(1) Whether Carbon target and CH4 gas were used as sputtering original source, FTIR spectra reveal that all these synthesized B-C-N films are atomic-level hybrids composed of B, C and N atoms. Through the analysis conclude, when carbon source is graphite target, various chemical bonds can be enhanced by increasing the sputtering power of graphite target or increasing the substrate temperature; when carbon source is CH4 gas, various chemical bonds can also be enhanced by increasing CH4 flow.
(2) FTIR spectra show that all the samples are atomic-level compounds which were composed of B, C and N atoms. From the results, when carbon source is graphite target, chemical bonds enhanced as increasing the sputtering power of graphite target or substrate temperature; when carbon source is CH4 gas, surface morphology of B-C-N thin films become better and better by increasing CH4 flow.
(3) Steps instrument curve reveal change rule of film thickness by adjusting a series of experimental parameters when Carbon target and CH4 gas were used as sputtering original source, respectively.
(4) The results of nano-indentation tests indicated that the hardness of as-deposited B-C-N thin film has slightly increased, although the deposition substrates have been pretreated for abrasion.
引文
[1]Kester D. J., Ailey K. S., Lichtenwalner D. J., et al. Growth and characterization of cubic boron nitride thin films [J].J.Vac. Sci. Technol.A.1994,12:3074-3081.
[2]Karim M. Z., Cameron D. C.,Hashmi M. S. J. Characterization of mixed-phase BN thin films deposited by plasma CVD [J].Surf. Coat. Technol.1993,60:502-505
[3]Liu A Y., Wentzcovitch R. M., Cohen M. L. Atomic Arrangement and Electronic Structure of BC2N [J]. Phys. Rev. B,1989,39:1760-1765.
[4]Hoffman D. M., Doll F. L., Eklund P. C. Optical properties of pyrolytic boron nitride in the energy range 0.05-10eV[J]. Phys. Rev. B.1983,30:6051-6056.
[5]刘立华.硼碳氮薄膜的制备及性质研究[D].吉林：吉林大学出版社,2006.
[6]Q. Yang, C. B. Wang, S. Zhang, D. M. Zhang, et al. Effect of nitrogen pressure on structure and optical properties of pulsed laser deposited BCN thin films[J].Surface and Coatings Technology,2010,204:1863-1867.
[7]Z. F. Ying, D. Yu, H. Ling,et al. Synthesis of BCN thin films by nitrogen ion beam assisted pulsed laser deposition from a B4C target [J]. Diamond and Related Materials,2007,16: 1579-1585.
[8]Setsuo Nakao, Tsutomu Sonoda, Kazuo Tsugawa, et al. Effects of nitrogen gas ratio on composition and microstructure of BCN films prepared by RF magnetron sputtering [J]. Vacuum,2009,204:713-717.
[9]Fuchao Jia, Chunqiang Zhuang, Changyu Guan, et al. Preparation of B-C-N films by magnetron sputtering with different N2/Ar flow ratio[J]. Vacuum,2011,85:887-891.
[10]Z.Y Xie,J. H Edgar, T. L McCormick, et al. The effects of the simultaneous addition of diborane and ammonia on the hot-filament-assisted chemical vapor deposition of diamond II. Characterization of diamond and BCN film[J]. Diamond and Related Materials,1998, 7:1357-1363。
[11]张锐.现代材料分析方法[M].北京：化学工业出版社,2007.
[12]Pascual E, Mari'nez E, Esteve J,et al. Boron Carbide Thin Films Deposited by Tuned-substrate RF Magnetron Sputtering[J]. Diamond and Related Materials.1999,8:402-405.
[13]Wada Y, Yap Y K. Yoshimur M. The control of B-N and B-C bonds in BCN films synthesized using pulsed laser deposition [J]. Diamond and Related Materials.2000,9:620-624.
[14]Linss V, Rodil S E, Reinke P, et al. Bonding Characteristics of DC Magnetron Sputtered B-C-N Thin Films Investigated by Fourier-transformed Infrared Spectroscopy and X-ray Photoelectron Spectroscopy[J]. Thin Solid Films.2004,467(1-2):76-87.
[15]Yang T S,Tsai T H, Lee C H, et al. Deposition of Carbon-containing Cubic Boron Nitride Films by Pulsed-DC Magnetron Sputtering[J]. Thin Solid Films.2001,398-399:285-290.
[16]He D Y, Cheng W J, Qin J, et al. Relief of the internal stress in ternary boron carbon-nitride thin films[J]. Appl. Surf. Sci.2002,191:338.
[17]Linss V, Hermann I, Schwarzer N, et al. Mechanical properties of thin films in the ternary triangle B-C-N [J]. Surf. Coat. Technol. 2003,163-164:220.
[18]Essafti A., Ech-chamikh E., Fierro J. L. G. Structural and chemical analysis of amorphous B-N-C thin films deposited by RF sputtering[J]. Diam. Relat. Mater.2005,14:1663-1668.
[19]Chattopadhyay S., Chien S. C., Chen L. C., et al. Thermal diffusivity in diamond, SiCxNy and BCxNy [J].Diam. Relat. Mater.2002,11:708-713.[20]谢存毅.纳米压痕技术在材料科学中的应用[J].实验技术,2001,30：432-435.
[21]OLIVER W C, PHARR GM. An Improved Technique for Determining Hardness and Elastic Modulus Using load and Displacement Sensing Indentation Experiments[J]. J. Mater. Res, 1992,7:1564-1583.
[22]李明吉.大尺寸高质量金刚石厚膜制备及氮掺杂对金刚石生长的影响研究[[D].吉林：吉林大学,2006.
[23]Q. Yang,C. B. Wang, S.Zhang, et al. Effects of nitrogen pressure on structure and optical properties of pulsed laser deposited BCN thin films [J]. Surf. Coat. Technol.2010, 204:1863-1867.
[24]A. Lousa, J. Esteve, S. muhl, et al. BCN thin films near the B4C composition by radio frequency magnetron sputtering[J]. Diamond Relat. Mater,2002,9:502-505.
[25]E. Martinez, A. Lousa, J. Esteve, et al. Micromechanical and microtribological properties of BCN thin films near the B4C composition deposited by r.f magnetron sputtering [J]. Diamond Relat. Mater,2001,10:1892-1896.
[26]Chunqiang Zhuang, Jijun Zhao, Fuchao Jia, et al. Tuning bond contents in B-C-N films via temperature and bias voltage within RF magnetron sputtering [J]. Surface and Coatings Technology,2009,204:713-717.
[27]Eungsun Byon, Jong-Kuk Kim, Sunghun Lee, et al.Mechanical properties of B-C-N films deposited by dual cesium ion beam sputtering system[J]. Surf. Coat. Technol.2003, 167-170,340-343.
[28]Eungsun Byon,Myungsook Son, Nobuyoshi Hara, et al. Corrosion behavior of boron-carbon-nitride films grown by magnetron sputtering[J]. Thin Solid Films,2004, 447-448,197-200.
[29]Dong Ho Kim, Eungsun Byon, Sunghun Lee, et al. Characterization of ternary boron carbon nitride films synthesized by RF magnetron sputtering [J]. Thin Solid Films,2004, 447-448,192-196
[30]Youming Chen, Shengrong Yang,Junyan Zhang.The influence of processing gas on the mechanical properties of sputtered B-C-N-H films [J]. Applied Surface Science.2009, 255:8575-8581
[31]J.Yu, E. G.Wang. Turbostratic boron carbon nitride film and its field-emitting behavior[J]. App. Phys. Lett.1999,74:2948-2950
[32]J.Yu, E.G.Wang,J. Ahn, et al. Turbostratic boron carbon nitride films produced by bias-assisted hot filament chemical vapor deposition [J]. J.Appl.Phys.2000, 87:4022-4025
[33]C. Y. Zhi, X. D. Bai, E. G. Wang. Raman characterization of boron carbon nitride nanotubes [J]. App. Phys. Lett.2002,80:3590-3592
[34]Xiangyang Chen, Zenghui Wang, Shengli Ma, et al. Microstructure and tribological properties of ternary BCN thin films with different carbon contents [J]. Diamond and Related Materials,2010,19:1225-1229.
[35]Shengli Ma, Bin Xu, Guizhi Wu, Yanfeng Wang, et al. Microstructure and mechanical properties of SiCN hard films deposited by an arc enhanced magnetic sputtering hybrid system [J]. Surface and Coatings Technology,2008,202:5379-5382
[26]Kim D. H., Byon E., Lee S., et al. Characterization of ternary boron carbon nitride films synthesized by RF magnetron sputtering [J]. Thin Solid Films,2004, 447-448:192-196.
[27]Hasegawa T., Yamamoto K., Kakudate Y. Influence of raw gases on B-C-N films prepared by electron beam excited plasma CVD [J]. Diam. Relat. Mater.,2003,12:1045-1048.
[38]Chen Y. M., Zeng Z. X., Yang S. R., et al. The tribological performance of BCN films under ionic liquids lubrication [J]. Diam. Relat. Mater.2009,18:20-26.
[39]管昌雨.反应磁控溅射制备组分可控的B-C-N薄膜[D].大连：大连理工大学出版社,2010.
[40]吴占玲.磁控溅射法制备的Al-Mg-B薄膜的研究[D].大连：大连理工大学出版社,2011.
[41]Linss V. Comment on lihua liu" Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering" [J]. Applied Surface Science.2007,253(10):4814-4815.
[42]Z. F. Zhou, I.Bello, M.K. Lei.et al. Synthesis and characterization of boron carbon nitride films by radio frequency magnetron sputtering[J]. Surface and Coatings Technology,2000,128-129:334-340.
[43]V. Linss, I. Hermann, N. Schwarzer,et al. Mechanical properties of thin films in the ternary triangle B-C-N[J]. Surface and Coatings Technology,2003,163-164:220-226.
[44]徐淑艳,马欣新,孙明仁.磁控溅射制备BCN薄膜纳米力学和摩擦磨损行为的研究[J].摩擦学学报,2006,26：6.
[45]S. C. Chien, S. Chattopadhyay, L. C. Chen, et al. Mechanical properties of amorphous boron carbon nitride films produced by dual gun sputtering [J]. Diamond and Related Materials. 2003,12:1463.
[46]A. C. Ferrari, J. Robertson, M.G. Beghi, et al. Elastic Constants of Nanometer Thick Diamond-like Carbon Films [J]. Appl. Phys. Lett.1999,75:1893.
[47]Simone Andersa, Joel W Ager IIIa, George M Pharr, et al. Heat treatment of catholic arc deposited amorphous hard carbon films [J]. Thin Solid Films.1997,308-309:186-190.
[48]A.L.Liu, M.L.Cohen. Predietion of new low compressibility solids [J].Science.1989, 245:841-842.
[49]Hasegawa T, Yamamoto K, Kakudate Y. Synthesis of B-C-N thin films by electron beam excited plasma CVD[J]. Diamond and Related Materials.2002,11(3-6):1290-1294.
[50]Y. Kusano, J. E. Evetts, I. M. Hutching, et al. Deposition of boron carbon nitride films by dual cathode magnetron sputtering[J]. Thin Solid Films.1999,343-344:250-253.
[2]Karim M. Z., Cameron D. C.,Hashmi M. S. J. Characterization of mixed-phase BN thin films deposited by plasma CVD [J].Surf. Coat. Technol.1993,60:502-505
[3]Liu A Y., Wentzcovitch R. M., Cohen M. L. Atomic Arrangement and Electronic Structure of BC2N [J]. Phys. Rev. B,1989,39:1760-1765.
[4]Hoffman D. M., Doll F. L., Eklund P. C. Optical properties of pyrolytic boron nitride in the energy range 0.05-10eV[J]. Phys. Rev. B.1983,30:6051-6056.
[5]刘立华.硼碳氮薄膜的制备及性质研究[D].吉林：吉林大学出版社,2006.
[6]Q. Yang, C. B. Wang, S. Zhang, D. M. Zhang, et al. Effect of nitrogen pressure on structure and optical properties of pulsed laser deposited BCN thin films[J].Surface and Coatings Technology,2010,204:1863-1867.
[7]Z. F. Ying, D. Yu, H. Ling,et al. Synthesis of BCN thin films by nitrogen ion beam assisted pulsed laser deposition from a B4C target [J]. Diamond and Related Materials,2007,16: 1579-1585.
[8]Setsuo Nakao, Tsutomu Sonoda, Kazuo Tsugawa, et al. Effects of nitrogen gas ratio on composition and microstructure of BCN films prepared by RF magnetron sputtering [J]. Vacuum,2009,204:713-717.
[9]Fuchao Jia, Chunqiang Zhuang, Changyu Guan, et al. Preparation of B-C-N films by magnetron sputtering with different N2/Ar flow ratio[J]. Vacuum,2011,85:887-891.
[10]Z.Y Xie,J. H Edgar, T. L McCormick, et al. The effects of the simultaneous addition of diborane and ammonia on the hot-filament-assisted chemical vapor deposition of diamond II. Characterization of diamond and BCN film[J]. Diamond and Related Materials,1998, 7:1357-1363。
[11]张锐.现代材料分析方法[M].北京：化学工业出版社,2007.
[12]Pascual E, Mari'nez E, Esteve J,et al. Boron Carbide Thin Films Deposited by Tuned-substrate RF Magnetron Sputtering[J]. Diamond and Related Materials.1999,8:402-405.
[13]Wada Y, Yap Y K. Yoshimur M. The control of B-N and B-C bonds in BCN films synthesized using pulsed laser deposition [J]. Diamond and Related Materials.2000,9:620-624.
[14]Linss V, Rodil S E, Reinke P, et al. Bonding Characteristics of DC Magnetron Sputtered B-C-N Thin Films Investigated by Fourier-transformed Infrared Spectroscopy and X-ray Photoelectron Spectroscopy[J]. Thin Solid Films.2004,467(1-2):76-87.
[15]Yang T S,Tsai T H, Lee C H, et al. Deposition of Carbon-containing Cubic Boron Nitride Films by Pulsed-DC Magnetron Sputtering[J]. Thin Solid Films.2001,398-399:285-290.
[16]He D Y, Cheng W J, Qin J, et al. Relief of the internal stress in ternary boron carbon-nitride thin films[J]. Appl. Surf. Sci.2002,191:338.
[17]Linss V, Hermann I, Schwarzer N, et al. Mechanical properties of thin films in the ternary triangle B-C-N [J]. Surf. Coat. Technol. 2003,163-164:220.
[18]Essafti A., Ech-chamikh E., Fierro J. L. G. Structural and chemical analysis of amorphous B-N-C thin films deposited by RF sputtering[J]. Diam. Relat. Mater.2005,14:1663-1668.
[19]Chattopadhyay S., Chien S. C., Chen L. C., et al. Thermal diffusivity in diamond, SiCxNy and BCxNy [J].Diam. Relat. Mater.2002,11:708-713.[20]谢存毅.纳米压痕技术在材料科学中的应用[J].实验技术,2001,30：432-435.
[21]OLIVER W C, PHARR GM. An Improved Technique for Determining Hardness and Elastic Modulus Using load and Displacement Sensing Indentation Experiments[J]. J. Mater. Res, 1992,7:1564-1583.
[22]李明吉.大尺寸高质量金刚石厚膜制备及氮掺杂对金刚石生长的影响研究[[D].吉林：吉林大学,2006.
[23]Q. Yang,C. B. Wang, S.Zhang, et al. Effects of nitrogen pressure on structure and optical properties of pulsed laser deposited BCN thin films [J]. Surf. Coat. Technol.2010, 204:1863-1867.
[24]A. Lousa, J. Esteve, S. muhl, et al. BCN thin films near the B4C composition by radio frequency magnetron sputtering[J]. Diamond Relat. Mater,2002,9:502-505.
[25]E. Martinez, A. Lousa, J. Esteve, et al. Micromechanical and microtribological properties of BCN thin films near the B4C composition deposited by r.f magnetron sputtering [J]. Diamond Relat. Mater,2001,10:1892-1896.
[26]Chunqiang Zhuang, Jijun Zhao, Fuchao Jia, et al. Tuning bond contents in B-C-N films via temperature and bias voltage within RF magnetron sputtering [J]. Surface and Coatings Technology,2009,204:713-717.
[27]Eungsun Byon, Jong-Kuk Kim, Sunghun Lee, et al.Mechanical properties of B-C-N films deposited by dual cesium ion beam sputtering system[J]. Surf. Coat. Technol.2003, 167-170,340-343.
[28]Eungsun Byon,Myungsook Son, Nobuyoshi Hara, et al. Corrosion behavior of boron-carbon-nitride films grown by magnetron sputtering[J]. Thin Solid Films,2004, 447-448,197-200.
[29]Dong Ho Kim, Eungsun Byon, Sunghun Lee, et al. Characterization of ternary boron carbon nitride films synthesized by RF magnetron sputtering [J]. Thin Solid Films,2004, 447-448,192-196
[30]Youming Chen, Shengrong Yang,Junyan Zhang.The influence of processing gas on the mechanical properties of sputtered B-C-N-H films [J]. Applied Surface Science.2009, 255:8575-8581
[31]J.Yu, E. G.Wang. Turbostratic boron carbon nitride film and its field-emitting behavior[J]. App. Phys. Lett.1999,74:2948-2950
[32]J.Yu, E.G.Wang,J. Ahn, et al. Turbostratic boron carbon nitride films produced by bias-assisted hot filament chemical vapor deposition [J]. J.Appl.Phys.2000, 87:4022-4025
[33]C. Y. Zhi, X. D. Bai, E. G. Wang. Raman characterization of boron carbon nitride nanotubes [J]. App. Phys. Lett.2002,80:3590-3592
[34]Xiangyang Chen, Zenghui Wang, Shengli Ma, et al. Microstructure and tribological properties of ternary BCN thin films with different carbon contents [J]. Diamond and Related Materials,2010,19:1225-1229.
[35]Shengli Ma, Bin Xu, Guizhi Wu, Yanfeng Wang, et al. Microstructure and mechanical properties of SiCN hard films deposited by an arc enhanced magnetic sputtering hybrid system [J]. Surface and Coatings Technology,2008,202:5379-5382
[26]Kim D. H., Byon E., Lee S., et al. Characterization of ternary boron carbon nitride films synthesized by RF magnetron sputtering [J]. Thin Solid Films,2004, 447-448:192-196.
[27]Hasegawa T., Yamamoto K., Kakudate Y. Influence of raw gases on B-C-N films prepared by electron beam excited plasma CVD [J]. Diam. Relat. Mater.,2003,12:1045-1048.
[38]Chen Y. M., Zeng Z. X., Yang S. R., et al. The tribological performance of BCN films under ionic liquids lubrication [J]. Diam. Relat. Mater.2009,18:20-26.
[39]管昌雨.反应磁控溅射制备组分可控的B-C-N薄膜[D].大连：大连理工大学出版社,2010.
[40]吴占玲.磁控溅射法制备的Al-Mg-B薄膜的研究[D].大连：大连理工大学出版社,2011.
[41]Linss V. Comment on lihua liu" Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering" [J]. Applied Surface Science.2007,253(10):4814-4815.
[42]Z. F. Zhou, I.Bello, M.K. Lei.et al. Synthesis and characterization of boron carbon nitride films by radio frequency magnetron sputtering[J]. Surface and Coatings Technology,2000,128-129:334-340.
[43]V. Linss, I. Hermann, N. Schwarzer,et al. Mechanical properties of thin films in the ternary triangle B-C-N[J]. Surface and Coatings Technology,2003,163-164:220-226.
[44]徐淑艳,马欣新,孙明仁.磁控溅射制备BCN薄膜纳米力学和摩擦磨损行为的研究[J].摩擦学学报,2006,26：6.
[45]S. C. Chien, S. Chattopadhyay, L. C. Chen, et al. Mechanical properties of amorphous boron carbon nitride films produced by dual gun sputtering [J]. Diamond and Related Materials. 2003,12:1463.
[46]A. C. Ferrari, J. Robertson, M.G. Beghi, et al. Elastic Constants of Nanometer Thick Diamond-like Carbon Films [J]. Appl. Phys. Lett.1999,75:1893.
[47]Simone Andersa, Joel W Ager IIIa, George M Pharr, et al. Heat treatment of catholic arc deposited amorphous hard carbon films [J]. Thin Solid Films.1997,308-309:186-190.
[48]A.L.Liu, M.L.Cohen. Predietion of new low compressibility solids [J].Science.1989, 245:841-842.
[49]Hasegawa T, Yamamoto K, Kakudate Y. Synthesis of B-C-N thin films by electron beam excited plasma CVD[J]. Diamond and Related Materials.2002,11(3-6):1290-1294.
[50]Y. Kusano, J. E. Evetts, I. M. Hutching, et al. Deposition of boron carbon nitride films by dual cathode magnetron sputtering[J]. Thin Solid Films.1999,343-344:250-253.
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