SiO_x渐变折射率薄膜与ZnO透明导电薄膜的反应磁控溅射工艺及机理研究
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摘要
光学薄膜被广泛应用于科研、国防军事以及民用产品等各个领域。随着光通信、平板显示等技术的出现与发展,以及军事、科学研究等领域新的需求,对光学薄膜性能的要求越来越高,对光学薄膜材料也提出了新的挑战。
SiO_x和ZnO材料体系都是储量丰富,绿色环保的新型光学薄膜材料,在光学及半导体电器件等工业领域具有广泛的应用前景。SiO_x具有折射率在大范围可调,红外光波段透明性好的特点;掺杂的ZnO可以具有良好的透明导电性能。磁控溅射技术是一种已经被广泛采用的成熟的产业化生产技术。精确及可重复地控制SiO_x薄膜材料的折射率及膜厚,抑制ZnO薄膜制备过程中的反溅射现象,是决定这两种材料体系能否真正获得产业化应用的关键问题。
本论文以SiO_x和ZnO材料体系为研究对象,系统地研究了磁控溅射工艺条件对薄膜的化学成分、微结构及光学特性等的影响。从应用的角度重点研究了用反应磁控溅射稳定地获得SiO_x中间折射率材料及相关光学薄膜器件的工艺,分析了利用自由基辅助磁控溅射技术制备ZnO薄膜的反溅射现象和机理。通过大量的实验和分析,取得了如下一些结果:
1.SiO_x渐变折射率材料的反应磁控溅射工艺研究及SiO_x/SiO_2多层膜红外滤波片光学薄膜器件的制备:
(1)利用反应磁控溅射镀膜技术,通过改变氧气流速或溅射功率,精确可重复地获得了折射率在3.69到1.44(@λ=1550 nm)之间可任意调控的SiO_x(0≦x≦2)薄膜材料;
(2)利用SiO_x/SiO_2材料组合,成功地演示了具有高折射率比的多层膜带通和反射红外滤光片光学薄膜器件;
(3)从原理和实验上证明了采用单一的硅溅射靶材可以制备具有良好光学特性的红外光学器件,为产业化生产提供了一种经济而实用的技术和方法。
2.用SiO_x制备渐变折射率Rugate Filter的理论及工艺研究:
(1)从理论分析的角度讨论了材料的选择及折射率分布的设计对rugate filter光学性质的影响。结果表明,选择合适的折射率振幅调制函数及引入界面折射率匹配层,可以使rugate filter的光学特性得到很大的改善。
(2)通过调节SiO_x中的氧含量,成功地制备了具有较好光学性能的渐变折射率rugate filter光学薄膜器件。
3.用自由基辅助磁控反应溅射法制备ZnO透明导电薄膜过程中的反溅射现象研究:
(1)溅射损失主要来源于扩散沉积和反溅射两种机制;
(2)在溅射区高能氧负离子对低氧化状态ZnO_x膜的轰击是导致反溅射的主要因素。反溅射效应的强弱取决于沉积ZnO_x膜的溅射阈值以及溅射区氧负离子的浓度。
(3)提出了通过调节真空室中溅射区和氧化区的氧平衡分布抑制ZnO反溅射现象的方法。为下一步制备高质量的ZnO透明导电薄膜提供了实验和理论方面的依据。
Optical coating technologies have been widely applied in many areas,such as scientific research,national defense,military and civilian products etc.To match the fast growing application requirements of optical communication,flat panel display etc, the performance requirements of optical coating is became more and more stringent, which issue new challenge in optical coating materials.
The SiO_x and ZnO are both abundant,environmentally friendly and non-toxic new type optical coating materials,which have a wide application prospect in optical and semiconductor device industry.SiO_x materials have a wide range tunable refractive index and high transparency in infrared band,and doped ZnO has a good transparent conductive performance,make them win widespread attention.Magnetron sputtering is a widely used,mature and industrialized production technology.The two importance problem,about how to precisely and repeatedly control refractive index and thickness variation of fabricated SiO_x films,and how to suppress the resputtering effect during the sputtering process of ZnO,are crucial in applying to the industrialized production.
The main purpose of this article is about a comprehensive study on the SiO_x and ZnO materials,concerning how magnetron sputtering parameters affect the chemical composition,microstructure and optical properties of deposited films.We do some research from view of application mainly about using reactive magnetron sputtering to get a steady SiO_x material with middle-refractive index and optical coating devices related,analyzing the resputtering phenomenon and the cause in the ways using radical assisted sputtering to prepare ZnO films.From plenty of experiments and careful analysis,we get the following result:
1.The art to fabricate SiO_x graded refractive index material and relative SiO_x/SiO_2 multilayer infrared filters by reactive magnetron sputtering:
(1) Graded refractive index SiO_x(0≦x≦2) thin film material with precisely controlled refractive index ranging from 3.69 to 1.44(@λ=1550 nm) have been obtained by changing the oxygen flow rate or sputtering power through reactive magnetron sputtering.
(2) Successfully demonstrated SiO_x/SiO_2 multilayered band-pass filters and infrared reflective filters by combining the high refractive index SiO_2 and low refractive SiO_x(0≦x≦2) materials together as multilayer thin films.
(3) Proved the feasibility to fabricate high quality infrared optical filters by using Si targets only,which provides a practical and economical technology for industrial fabrication.
2.Theoretical and practical research on fabricating Rugate Filter by using SiO_x graded refractive index material:
(1) Theoretically discussed the effect of material choice and refractive index distribution design on the optical property of rugate filter.It is shown by the experimental results that the optical property of rugate filter can by improved greatly by choosing proper refractive index amplitude modulation function and introducing refractive index matching layer on the interface.
(2) Successfully manufactured high optical quality graded refractive index rugate filter by adjusting the oxygen content of the SiO_x layers.
3.Research on the resputtering phenomena in radical assisted magnetron sputtering of ZnO transparent conductive film:
(1) Sputtering loss mainly orients from diffused deposition and resputtering mechanisms.
(2) The bombardment of negative oxygen ions on the deposited low oxide degree ZnO_x film is the main reason yielding the resputtering phenomena. The degree of reputtering is determined by the sputtering threshold of the as deposited ZnO_x film and the concentration of negative oxygen ions in sputtering zone.
(3) Suggested a method to suppress the resputtering effect in ZnO film sputtering by adjusting the balance of oxygen distribution between sputtering zone and oxidation zone,provide guidance in both theory and experiment for preparing high quality ZnO transparent conductive film in future.
SiO_x和ZnO材料体系都是储量丰富,绿色环保的新型光学薄膜材料,在光学及半导体电器件等工业领域具有广泛的应用前景。SiO_x具有折射率在大范围可调,红外光波段透明性好的特点;掺杂的ZnO可以具有良好的透明导电性能。磁控溅射技术是一种已经被广泛采用的成熟的产业化生产技术。精确及可重复地控制SiO_x薄膜材料的折射率及膜厚,抑制ZnO薄膜制备过程中的反溅射现象,是决定这两种材料体系能否真正获得产业化应用的关键问题。
本论文以SiO_x和ZnO材料体系为研究对象,系统地研究了磁控溅射工艺条件对薄膜的化学成分、微结构及光学特性等的影响。从应用的角度重点研究了用反应磁控溅射稳定地获得SiO_x中间折射率材料及相关光学薄膜器件的工艺,分析了利用自由基辅助磁控溅射技术制备ZnO薄膜的反溅射现象和机理。通过大量的实验和分析,取得了如下一些结果:
1.SiO_x渐变折射率材料的反应磁控溅射工艺研究及SiO_x/SiO_2多层膜红外滤波片光学薄膜器件的制备:
(1)利用反应磁控溅射镀膜技术,通过改变氧气流速或溅射功率,精确可重复地获得了折射率在3.69到1.44(@λ=1550 nm)之间可任意调控的SiO_x(0≦x≦2)薄膜材料;
(2)利用SiO_x/SiO_2材料组合,成功地演示了具有高折射率比的多层膜带通和反射红外滤光片光学薄膜器件;
(3)从原理和实验上证明了采用单一的硅溅射靶材可以制备具有良好光学特性的红外光学器件,为产业化生产提供了一种经济而实用的技术和方法。
2.用SiO_x制备渐变折射率Rugate Filter的理论及工艺研究:
(1)从理论分析的角度讨论了材料的选择及折射率分布的设计对rugate filter光学性质的影响。结果表明,选择合适的折射率振幅调制函数及引入界面折射率匹配层,可以使rugate filter的光学特性得到很大的改善。
(2)通过调节SiO_x中的氧含量,成功地制备了具有较好光学性能的渐变折射率rugate filter光学薄膜器件。
3.用自由基辅助磁控反应溅射法制备ZnO透明导电薄膜过程中的反溅射现象研究:
(1)溅射损失主要来源于扩散沉积和反溅射两种机制;
(2)在溅射区高能氧负离子对低氧化状态ZnO_x膜的轰击是导致反溅射的主要因素。反溅射效应的强弱取决于沉积ZnO_x膜的溅射阈值以及溅射区氧负离子的浓度。
(3)提出了通过调节真空室中溅射区和氧化区的氧平衡分布抑制ZnO反溅射现象的方法。为下一步制备高质量的ZnO透明导电薄膜提供了实验和理论方面的依据。
Optical coating technologies have been widely applied in many areas,such as scientific research,national defense,military and civilian products etc.To match the fast growing application requirements of optical communication,flat panel display etc, the performance requirements of optical coating is became more and more stringent, which issue new challenge in optical coating materials.
The SiO_x and ZnO are both abundant,environmentally friendly and non-toxic new type optical coating materials,which have a wide application prospect in optical and semiconductor device industry.SiO_x materials have a wide range tunable refractive index and high transparency in infrared band,and doped ZnO has a good transparent conductive performance,make them win widespread attention.Magnetron sputtering is a widely used,mature and industrialized production technology.The two importance problem,about how to precisely and repeatedly control refractive index and thickness variation of fabricated SiO_x films,and how to suppress the resputtering effect during the sputtering process of ZnO,are crucial in applying to the industrialized production.
The main purpose of this article is about a comprehensive study on the SiO_x and ZnO materials,concerning how magnetron sputtering parameters affect the chemical composition,microstructure and optical properties of deposited films.We do some research from view of application mainly about using reactive magnetron sputtering to get a steady SiO_x material with middle-refractive index and optical coating devices related,analyzing the resputtering phenomenon and the cause in the ways using radical assisted sputtering to prepare ZnO films.From plenty of experiments and careful analysis,we get the following result:
1.The art to fabricate SiO_x graded refractive index material and relative SiO_x/SiO_2 multilayer infrared filters by reactive magnetron sputtering:
(1) Graded refractive index SiO_x(0≦x≦2) thin film material with precisely controlled refractive index ranging from 3.69 to 1.44(@λ=1550 nm) have been obtained by changing the oxygen flow rate or sputtering power through reactive magnetron sputtering.
(2) Successfully demonstrated SiO_x/SiO_2 multilayered band-pass filters and infrared reflective filters by combining the high refractive index SiO_2 and low refractive SiO_x(0≦x≦2) materials together as multilayer thin films.
(3) Proved the feasibility to fabricate high quality infrared optical filters by using Si targets only,which provides a practical and economical technology for industrial fabrication.
2.Theoretical and practical research on fabricating Rugate Filter by using SiO_x graded refractive index material:
(1) Theoretically discussed the effect of material choice and refractive index distribution design on the optical property of rugate filter.It is shown by the experimental results that the optical property of rugate filter can by improved greatly by choosing proper refractive index amplitude modulation function and introducing refractive index matching layer on the interface.
(2) Successfully manufactured high optical quality graded refractive index rugate filter by adjusting the oxygen content of the SiO_x layers.
3.Research on the resputtering phenomena in radical assisted magnetron sputtering of ZnO transparent conductive film:
(1) Sputtering loss mainly orients from diffused deposition and resputtering mechanisms.
(2) The bombardment of negative oxygen ions on the deposited low oxide degree ZnO_x film is the main reason yielding the resputtering phenomena. The degree of reputtering is determined by the sputtering threshold of the as deposited ZnO_x film and the concentration of negative oxygen ions in sputtering zone.
(3) Suggested a method to suppress the resputtering effect in ZnO film sputtering by adjusting the balance of oxygen distribution between sputtering zone and oxidation zone,provide guidance in both theory and experiment for preparing high quality ZnO transparent conductive film in future.
引文
1.H.A.Macleod,Thin-Film Optical Filters,Third ed.Institute of Physics Publishing,London,2001.
2.H.A.麦克劳德著,周九林,尹树百译,光学薄膜技术,北京:国防工业出版社,1974.
3.唐晋发,顾培夫编,薄膜光学与技术,北京:机械工业出版社,1989.
4.顾培夫,薄膜技术,浙江:浙江大学出版社,1990.
5.田民波,刘德令编译,薄膜科学与技术手册,北京:机械工业出版社,1991.
6.林永昌,卢维强编,光学薄膜原理,北京:国防工业出版社,1990.
7.赖发春,中国科学技术大学博士学位论文,2005.5.
8.卢维强,王华清,肖畅,杨朝佳,现代显示,73,6-9,2007.
9.洪冬梅,朱震,刘国喜,光学仪器,26,198-203,2004.
10.马汶伟,光学仪器,26,222-224,2004.
11.袁一方,陈桂莲,陈抱雪等,光学仪器,23,110-113,2001.
12.杨军,明海,王沛,唐麟,光电子技术与信息,16,10-14,2003.
13.屠海令,杜军,稀有金属,31,265-278,2007.
14.顾培夫,李海峰,章岳光等,光学仪器,23,105-109,2001.
15.B.Y.Oh,M.C.Jeong,T.H.Moon,W.Lee,J.M.Myoung,J.Y.Hwang and D.S.Seo,J.APPL.PHYS.99,124505,2.006.
16.V.Sittinger,F.Ruske,W.Wemer,B.Szyszka,B.Rech,J.H(u|¨)pkes,G.Sch(o|¨)pe and H.Stiebig,Thin Solid Films 496,16-25,2006.
17.X.Jiang,F.L.Wong,M.K.Fung,and S.T.Lee,Appl.Phys.Lett.83,1875-1877,2003.
18.H.Kim,C.M.Gilmore et al.,Appl.Phys.Lett.76,259-261,2000.
19.王永仲,现代军用光学技术,北京:科学出版社,2003.
20.杨家德,纤维光学技术在军事中的应用,北京:科学技术文献出版社,1998.
21.Argus.Macleod,Optical Interference Coatings,MA 1,Optical Society of America,Washington,DC,2004.
22.S.M.Reiss,Opt.Photonies News 8,31 1997.
23.J.A.Dobrowolski,K.M.Baird,P.D.Carman,and A.Wardorf,Opt.Acta 20,925,1973.
24.J.A.Dobrowolski,F.C.Ho,and A.Wardorf,Appl.Opt.28,2702,1989.
25.R.W.Phillips and A.F.Bleikolm,Appl.Opt.35,5529,1996.
26.R.Szip6cs,K.Ferencz,C.Spielmaun,and F.Krausz,Opt.Lett.19,201,1994.
27.C.Agashe,O.Kluth,G.Schope,H.Siekmann,J.H(u|¨)pkes,B.Rech,Thin Solid Films,442,167-172,2003.
28.C.M.Lampert,working document for the International Energy Agency,task 18,advanced glazing,1994.
29.B.Hackman-Franclin,T.J.Hauser.,and J.D.Jameson,U.S.Industrial Outlook 1993—Section 7,construction materials.
30.L.Martinu and D.Poitras,J.Vac.Sci.Technol.A,18,2619-2645,2000.
31.J.A.Dobrowolski,Optical Society of America's Handbook of Optics,edited by M.Bass McGraw-Hill,New York,1995,Chap.42.
32.F.R.Flory,Marcel Dekker,Thin Films for Optical Systems,New York,1995.
33.CHIP《新电脑》杂志社,2005.http://www.chip.cn/infolshowArticle.isp?article_id=495
34.杨基南编译,微细加工技术,1,3-9,1994.
35.沈自才,王英剑,范正修,邵建达,中国激光,32,829-834,2005.
36.沈自才,沈建,刘世杰,孔伟金,邵建达,范正修,物理学报,56,1325-1328.
37.B.G.Bovard,Appl.Opt,32,5427-5442,1993.
38.W.E.Johnson and R.L.Crane,Proc.SPIE 2046,88-108,1993.
39.H.Yoda,D.Tanaka,O.Hanalzumi,Y.Kogami,and K.Shiraishi,Appl.Opt.45,184,2006.
40.W.H.Southwell and R.L.Hall,Appl.Opt,28,2949-2951,1989.
41.V.Janicki,S.Wilbrandt,O.Stenze,D.G(a|¨)bler,N.Kaiser,A.Tikhonravov,M.Trubetskov,and T.Amotchkina,J.Opt.A,Pure Appl.Opt.7,L9-L 12,2005.
42.W.H.Southwell,Opt.Lett.8,584-586,1983.
43.J.A.Dobrowolsld,D.Poitras,P.Ma,H.Vakil,and M.Acree,Appl.Opt.41, 3075-3083,2002.
44.A.Herpin,Compt.rend.225,182,1947.
45.L.I.Epstein,J.Opt.Soc.Am,42,806-810,1952.
46.P.H.Beming,J.Opt.Soc.Am,52,431-436,1962.
47.J.A.Dobrowolski,S.H.C.Piotrowski,Appl.Opt,21,1512-1521,1981.
48.J.Allen,B.Herrington,Proe.SPIE 2046,126-131,1993.
49.W.J.Gunning,R.L.Hail,F.J.Woodberry,W.H.Southwell and N.Gluck,Appl.Opt,28,2945-2948,1989.
50.C.C.Lee,C.J.Tang,and J.Y.Wu,Appl.Opt,45,1333-1337,2006.
51.Q.Tang,H.Matsuda,and K.Kikuchi and S.Ogura,J.Vac.Sci.Teehnol.A,16,3384-3388,1998.
52.X.R.Wang,H.Masumoto,Y.Someno and T.Hirai,Appl.Phys.Lett,72,3264-3266,1998.
53.H.Bartzsch,S.Lange,P.Fraeh,and K.Goedieke,Surf& Coat Teclmol,180-181,616-620,2004.
54.H.Yoda,D.Tanaka,O.Hanaizumi,Y.Kogami,and K.Shiraishi,Appl.Opt,45,184-190,2006.
55.E.P.Donovan,D.Van Veehten,A.D.F.Kahn,C.A.Carosella,and G.K.Hubler,Appl.Opt.28,2940-2944,1989.
56.P.L.Swart,P.V.Bulkin and B.M.Lacquet,Opt.Eng,35,1214-1219,1997.
57.P.L.Swart,B.M.Lacquer,A.A.Chteherbakov,and P.V.Bulkin,J.Vac.Sci.Teehnol.A,18,74-78,2000.
58.A.Feldman,E.N.Farabaugh,W.K.Hailer,D.M.Sanders and R.A.Stempniak,J.Vac.Sei.Teclmol.A,4,2969-2964,1986.
59.F.C.Lai,M.Li,H.Q.Wang.Y.S.Jiang and Y.Z.Song,CHINESE OPTICS LETTERS,3,490-492,2005.
60.V.M.Burlakov,G.A.D.Briggs,A.P.Sutton,A.Bongiomo and A.Pasquarello,Phys.Rev.Lett.93,135501,2004.
61.Z.M.Jiang,B.Shi,D.T.Zhao,J.Liu,and X.Wang,Appl.Phys.Lett,79,3395-3397,2001.
62.L.X.Yi,J.Heitmann,R.Scholz,and M.Zacharias,Appl.Phys.Lett,81,4248-4250,2002.
63.M.Zaeharias,J.Heitmann,R.Scholz,U.Kahler,M.Sehmidt and J.Bl(a|¨)sing,Appl.Phys.Lett,80,661-663,2002.
64.H.Shibayama,S.Hasuo,T.Yamaoka,Appl.Phys.Lett,47,429-430,1985.
65.X.Y.Chen,Y.F.Lu,L.J.Tang,Y.H.Wu,B.J.Cho,X.J.Xu,J.R.Dong,W.D.Song,J.Appl.Phys,97,014913,2005.
66.M.J.O'Leary,J.H.Thmas.Ⅲ,J.Vac.Sci.Technol,A.5,106-109,1987.
67.L.J.Guo,E.Leobandung,and S.Y.Chou,Appl.Phys.Lett,70,850-852,1997.
68.M.S.Hedenqvista,K.S.Johanssonb,Surf& Coat Technol,172,7-12,2003.
69.A.Hohl,T.Wieder et al.,J.Non-Cryst.Solids,320,255-280,2003.
70.J.U.Schmidt,B.Schmidt,Mater Sci & Engine B,101,28-33,2003.
71.K.Sato,T.Izumia et al.,Appl.Surf.Sci,216,376-381,2003.
72.C.C.Umbach,J.M.Blakely,Appl.Surf.Sci,175-176,746-752,2001.
73.M.Yamada,Y.Ohmori,K.Takada,M.Kobatashi,Appl,Opt,30,682-688,1991.
74.C.J.Zhong,H.Tanaka,S.Sugawa,T.Ohmi,J.Non-Cryst.Solids,351,2232-2237,2005.
75.G.Perez,A.M.Bernal-Oliva,E.Marquez,J.M.Gonzalez-Leal,C.Morant,I.Genova,J.F.Trigo,J.M.Sanz,Thin Solid Films,485,274-283,2005.
76.A.P.Braford and G.Hass,J.Opt.Soc.Am.53,1096-1100,1963.
77.N.M.Ravindra,J.Narayan,J.Appl.Phys,60,1139-1146,1986.
78.E.Dehan,P.Temple-Boyer,R.Henda,J.J.Pedroviejo,E.Scheid,Thin Solid Films,266,14-19,1995.
79.P.G.Pai,S.S.Chao,Y.Takagi,G.Lucovsky,J.Vac.Sci.Technol.A,4,689-684,1986.
80.G.Hass AND C.Salzberg,J.Opt.Soc.Am.44,181-187,1954.
81.V.E.Vamvakas,D.Davazoglou,Microelectronics Reliability,45,986-989,2005.
82.E.Ritter,Optica Acta,9,197-202,1962.
83.M.Kitagawa and M.Tateda,Appl.Opt,24,3359-3362,1985.
84.K.L.Chopra,S.Major,D.K.Pandya,Thin Solid films,102,1-46,1983.
85.T.J.Coutts,J.D.Perkins,D.S.Ginley,T.O.Mason,in the 195~(th) Meeting of the Electrochemical Society,Seattle,Washington,1999.
86.J.Robertson,J.Non-Cryst.Sol,354,2791-2795,2008.
87.李世涛,乔学亮,陈建国,激光与光电子学进展,40,53-59,2003.
88.R.J.Cava,J.M.Philips,J.Kwo,G.A.Tomas et al.,Appl.Phys.Lett,64,2071-2072,1994.
89.J.M.Philips,J.Kwo,G.A.Tomas,S.A.Carter et al.,Appl.Phys.Lett,65,115-117,1994.
90.M.A.Aegerter,A.Reich,D.Ganz,G.Gasparro,J.P(u|¨)tz,T.Krajewski,J.Non-Crys.Sol,218,123-128,1997.
91.A.S.Ryzhikov,R.B.Vasiliev,M.N.Rumyantseva,L.I.Ryabova et al.,Mater.Sci.Eng.B,96,268-274,2002.
92.T.Minami,H.Sonohara,T.Kakumu and S.Takata,Jpn.J.Appl.Phys,34,L971-L974,1995.
93.K.H.Seo,D.H.Park,J.H.Lee,J.J.Kim,Sol.Stat.Ion,177,601-605,2006.
94.D.R.Aeosta,E.P.Zironi,E.Montoya,W.Estrada,Thin Solid Films,288,1-7,1996.
95.T.Minami,T.Kakumu,Y.Takeda and S.Takata,Thin Solid Films,290-291,1-5,1996.
96.T.Minami,Y.Takeda,S.Takata and T.Kakumu,Thin Solid Films,308-309,12-18,1997.
97.T.Minami,T.Kakumu,Y.Takeda and S.Takata,Thin Solid Films,317,326-329,1998.
98.R.Martins,P.Barquinha,A.Pimentel,L.Pereira,E.Fortunato,Thin Solid Films,516,1322-1325,2008.
99.K.Ellmer,J.Phys.D:Appl.Phys,34,3097-3108,2001.
100.Y.lgasaki and H.Saito,J.Appl.Phys,70,3613-3619,1991.
101.徐颖,高劲松,王笑夷,陈红,王彤彤,光子学报,34,1187-1189,2005.
102.ITO透明导电玻璃可行性报告,国际光电产业咨询编制,2005.2
103.H.Mbarek,M.Saadoun,B.Bessa(i|¨)s,Mater.Sci.Eng.C,26,500-504,2006.
104.M.I.Baraton,L.Merhari,H.Ferkel,J.F.Castagnet,Mater.Sci.Eng.C,19,315-321,2002.
105.C.G.Granqvist,Solar Energy Materials & Solar Cells,91,1529-1598,2007.
106.K.L.Chopral,P.D.Paulson,y and V.Dutta,Prog.Photovolt:Res.Appl,12,69-92,2004.
107.汤安东,光学精密工程,9,273-278,2001.
108.胡炳森,王剑锋,马春华,顾子平,真空科学与技术,15,135-139,1995.
109.吴华夏,洪光烈,董戴,真空电子技术,4,15-21,2000
110.A.Shimizu,M.Kanbara,M.HadaandM.Kasuga,Jpn.J.Appl.Phys,17,1435-1436,1978.
111.R.L.Hoffman,B.J.Norrisand J.F.Wager,Appl.Phys.Lett,82,733-735,2003.
112.袭著有,许启明,赵鹏,田晓珍,西安建筑科技大学学报,36,119-112,2004.
113.刘世友,材料科学与工程,17,98-101,1999.
114.任豪,中国光学学会2006年学术大会,10-030,中国广州,2006.
115.J.H.Thomas Ⅲ,Appl.Phys.Lett,42,794-796,1983.
116.S.Major,S.Kumar,M.Bhatnagar and K.L.Chopra,Appl.Phys.Lett.49,394-396,1986.
117.L.Raniero,I.Ferreira,A.Pimentel,A.Goncatlves,P.Canhola,E.Fortunato,R.Martins,Thin Solid Films,511-512,295-298,2006.
118.黄佳木,董建华,张新元,太阳能学报,24,845-650,2003.
119.B.Szyszka,Thin Solid Films,351,164-169,1999.
120.H.Ohta,H.Mizoguehi,M.Hirano,S.Narushima,T.Kamiya and H.Hosono,Appl.Phys.Lett,82,823-825,2003.
121.C.X.Wang and G.W.Yang et al.,Appl.Phys.Lett,84,2427-2429,2004.
122.I.S.Jeong,J.H.Kim,and S.Im,Appl.Phys.Lett,83,2946-2948,2003.
123.Y.I.Alivov,J.E.Van.Nostrand,D.C.Look,M.V.Chuldehev,B.M.Ataev,Appl.Phys.Lett,83,2943-2945,2003.
124.Q.X.Yu,B.Xu,Q.H.Wu,Y.Liao,G.Z.Wang and R.C.Fang et al.,Appl. Phys.Lett,83,4713-4715,2003.
125.S.Masuda,K.Kitamura,Y.Okumura and S.Miyatake et al.,J.Appl.Phys,93,1624-1630,2003.
126.F.M.Hossain,J.Nishii,S.Takagi,A.Ohtomo,and T.Fukumura et al.,J.Appl.Phys,95,7768-7777,2003.
127.Y.Anno,T.Maekawa,J.Tamaki,Y.Asano,K.Hayashi,N.Miura and N.Yamazoe,Sensor & Actuators B,24-25,623-627,1995.
128.K.Ellmer,J.Phys.D:Appl.Phys,33,R17-R32,2000.
129.S.J.Pearton,D.P.Norton,K.Ip,Y.W.Heo,T.Steiner,Prog.in Mater.Sci,50,293-340,2005.
130.J.Mass,P.Bhattacharya,R.S.katiyar,Mater.Sci & Engine.B,103,9-15,2003.
131.S.S.Lin,J.L.Huang,P,Sajgalik,Surf & Coat.Teehnol,190,49-47,2005.
132.T.Minami,H.Sato,H.Nanto and S.Tanaka,Jpn.J.Appl.Phys,24,L781-L784,1985.
133.C.Agashe,O.Kluth,J.H(u|¨)pkesm U.Zastrow,B,Rech and M.Wuttig,J.Appl.Phys,95,1911-1917,2004.
134.K.H.Kim,K.C.Park,D.Y.Ma,J.Appl.Phys,81,7764-7772,1997.
135.余俊,赵青南,赵修建,硅酸盐学报,32,1241-1245,2004.
136.M.Chen,Z.L.Pei,X.Wang,C.Sun,L.S.Wen,J.Vae.Sci.technol.A,19,963-970,2001.
137.S.Zafar,C.S.Ferekides and D.L.Morel,J.Vae.Sei.Technol.A,13,2177-2182,1995.
138.K.Tominaga,N.Umezu,I.Mori,T.Ushiro,T.Moriga,I.nakabavashi,Thin Solid Films,334,35-39,1998.
139.Y.F.Sun,W.F.Liu,S.L.Liu,Z.Y.Zou,G.T.Du,Vacuum,80,981-984,2006.
140.D.G.Lima,D.H.Kim,J.K.Kim et al.,Supedattices and Microstructures,39,107-114,2006.
141.G.J.Fang,D.J.Li and B.L.Yao,J.Crys.Grow,247,393-400,2003.
142.AZO:Transparent Conductive Coating,www.cerac.com/pubs/proddata/AZO.pdf
143.Fuji Chimera Research Institute,Inc.Market Research Report,Oct.2007.http://www.fcr.co.ip/en/
144.G..J.Ockenfuss and N.A.O'Brien,Optical Fiber Communication Conference,FA8-1,2002 OSA Trends in Optics and Photonics Series Vol.70,Optical Society of America,Washington,DC,2002.
145.X.Y.Chen,Y.F.Lu,L.J.Tang et al.,J.Appl.Phys,97,014913,2005.
146.S.Spiga,G.Tallarida,A.Borghesi,A.Sassella,G.De Santi,Thin Solid Films,325,36-41,1998.
147.T.Inokuma,Y.Wakayama,T.Muramoto,R.Aoki,Y.Kurata,and S.Hasegawa,J.Appl.Phys,83,2228-2234,1998.
148.J.Y.Zhang and Ian W.Boyd,Appl.Phys.Lett,77,3574-3576,2000.
149.Y.Z.Song,T.Sakurai,K.Kishimoto,K.Maruta,S.Matsumoto and K.Kikuchi,Thin Solid Films,334,92-97,1998.
150.J.G.Hidalgo,R.Sema,E.H.Poniatowski and C.N.Afonso,Appl.Phys.A 79,915-918(2004).
151.K.Sturm and H.U.Krebs,J.Appl.Phys,90,1061-1063,2001.
152.S.F(a|¨)thler,K.Sturm,and H.-U.Krebs,Appl.Phys.Lett,75,3766-3768,1999.
153.M.Leskel and M.Ritala,Angew.Chem.Int.Ed.42,5548-5554,2003.
154.D.Riihel(a|¨),M.Ritala,R.Matero,M.Leskel(a|¨) Thin Solid Films,259,250-255,1996.
155.J.Lu,J.Sundqvist,M.Ottosson,A.Tarre,A.Rosental,J.Aarik and A.Harsta,J.Crystal Growth,260,191-200,2004.
156.S.W.Xue,X.T.Zua,W.G.Zheng,H.X.Deng,X.Xiang,Physica B,351,209-213,2006.
157.U.Kahler and H.Hofmeister,Appl.Phys.Lett,75,641-643,1999.
158.H.Eilers,Materials Letters,62,967-969,2008.
159.H.E.Atyia,Physica B,403,16-24,2008.
160.M.M.El-Nahass,A.A.M.Farag,E.M.Ibrahim,S.Abd-El-Rahman,Vacuum,72,453-460,2004.
161.P.Patsalas,S.Logothetidis and C.Metaxa,Appl.Phys.Lett.81,466-468,2002.
162.M.Rebien,W.Henrion,M.Hong and J.P.Mannaerts,Appl.Phys.Lett.81,250-252,2002.
163.A.Kuroyanagi,Jpn.J.Appl.Phys.28,219-222,1989.
164.M.F.Al-Kuhaili,S.M.A.Durrani and E.E.Khawaja,Appl.Phys.Lett.83,4533-4535,2003.
165.M.Passlack,E.F.Schubert,W.S.Hobson,M.Hong,N.Moriya,S.N.G.Chu,K.Konstadinidis,J.P.Mannaerts,M.L.Sehnoes,and G.J.Zydzik,J.Appl.Phys,77,686-693,1995.
166.D.H.Zhang,R.W.Gao and H.L.Ma,Thin Solid Films,295,83-86,1997.
167.E.P.Donovan,D.V.Vechten,A.D.F.Kahn,C.A.Carosella,and G.K.Hubler,Appl.Opt,28,2940-2944,1989.
168.Yasumi and Yamada,Thin Solid Films,377-378,92-96,2000.
169.B.Fan,M.Suzuki,and K.Tang,Appl.Opt,45,1461-1465,2006.
170.W.D.Sproul,D.J.Christie,D.C.Carter,Thin Solid Films,491,1-17,2005.
171.S.Karanth,G.H.Shanbhogue,and C.L.Nagendra,Appl.Opt,44,6186-6192,2005.
172.J.J.Ho,C.Y.Chen,C.M.Huang,W.J.Lee,W.R.Liou,and C.C.Chang,Appl.Opt,44,6176-6180,2005.
173.R.Y.Tsai,C.S.Chang,C.W.Chu,T.Chen,F.Dai,D.Lin,S.F.Yan,and A.Chang,Appl.Opt,40,1953-1958,2001.
174.H.Y.Kumagai,IEEE TRANSACTIONS ON Parts,Hybrids,and Packaging,Vol.PHP-8,no.3,September 1972.
175.T.Yoshida,K.Nishimoto,K.Sekine,and K.Etoh,Appl.Opt,45,1375-1379,2006.
176.F.C.Lai,M.Li,K.Chen,H.Q.Wang,Y.Z.Song,and Y.S.Jiang,Appl.Opt, 44,6181-6185,2005.
177.Q.M.Song,F.Huang,M.Li,B.Xie,H.Q.Wang,Y.S.Jiang and Y.Z.Song,J.Vac.Sci.technol.A,26,265-269,.2008.
178.F.C.Lai,M.Li,H.Q.Wang,H.L.Hu,X.P Wang,J.G.Hou,Y.Z.Song,Y.S.Jiang,Thin Solid films,488,314-320,2005.
179.Y.Z.Song,T.Sakural,K.Maruta,A.Matusita,S.Matsumoto,S.Saisho and K.Kikuehi,Vacuum 59,755-763,2000.
180.Y.Z.Song,T.Sakurai,Vacuum,74,409-415,2004.
181.Y.Z.Song,Y.S.Jiang,M.Li,H.Q.Wang,J.G.Hou,Optical Interference Coatings,ME4,Optical Society of America,Washington,DC,2004.
182.J.Rodriguez,M.Gomez,J.Ederth,G.A.Niklasson,C.G.Granqvist,Thin Solid Films,365,119-125,2000.
183.D.Guerin,S.Ismat.Shah,J.Vac.Sei.Teehnol.A,15,712-715,1997.
184.K.Ellmer,R.Wendt,Surf & Coatings Technol,93,21-26,1997.
185.S.Ben Amor,L.Guedri,G.Baud,M.Jacquet,M.Ghedira,Materials Chemistry & Physics,77,903-911,2002.
186.A.Yamamoto,Y.Abe,M.Kawamura,K.Sasaki,Vacuum,66,269-273,2002.
187.S.H.Jeong,J.K.Kim et al.,Vacuum,76,507-515,2004.
1.J.U.Schmidt,B.Schmidt,Mater Sci & Engine B,101,28-33,2003.
2.K.Sato,T.Izumia et al.,Appl.Surf.Sci,216,376-381,2003.
3.M.Kitagawa and M.Tateda,Appl.Opt,24,3359-3362,1985.
4.R.Y.Tsai,C.S.Chang,C.W.Chu,T.Chen,F.Dai,D.Lin,S.F.Yan,and A.Chang,Appl.Opt,40,1593-1598,2001.
5.H.Yoda,K.Shiraishi,Y.Hiratani and O.Hanaizumi,Appl.Opt.43,3548-3554,2004.
6.赖发春,中国科学技术大学博士学位论文,2005.5.
7.F.C.Lai,M.Li,H.Q.Wang.Y.S.Jiang and Y.Z.Song,CHINESE OPTICS LETTERS,3,490-492,2005.
8.S.H.Jeong,J.K.Kim,B.S.Kim,S.H.Shim,B.T.Lee,Vacuum,76,507-515,2004.
9.L.X.Yi,J.Heitmann,R.Scholz,and M.Zacharias,Appl.Phys.Lett,81,4248-4250,2002.(2-3)
10.M.Zacharias,J.Heitmann,R.Scholz,U.Kahler,M.Schmidt and J.Bl(a|¨)sing,Appl.Phys.Lett,80,661-663,2002.
11.H.Shibayama,S.Hasuo,T.Yamaoka,Appl.Phys.Lett,47,429-430,1985.
12.M.J.O'Leary,J.H.Thmas,Ⅲ,J.Vac.Sci.Technol,A.5,106-109,1987.
13.X.Y.Chen,Y.F.Lu,L.J.Tang,Y.H.Wu,B.J.Cho,X.J.Xu,J.R.Dong,W.D.Song,J.Appl.Phys,97,014913,2005.
14.Y.Z.Song,T.Sakurai,K.Kishimoto,K.Maruta,S.Matsumoto and K.Kikuchi,Thin Solid Films 334,92-97,1998.
15.T.Roschuk,J.Wojcik,X.Tan,J.A.Davies and P.Mascher,J.Vac.Sci.Technol.A,22,883-886,2004.
16.R.R.Willey,Appl.Opt,35,4982-4986,1996.
17.E.P.Donovan,D.Van Vechten,A.D.F.Kahn,C.A.Carosella,and G.K.Hubler,Appl.Opt.28,2940-2944,1989.
18.F.Richter,H.Kupfer,P.Schlott,T.Gessner,and C.Kaufmann,Thin Solid Films 389,278-283,2001.
19.G.J.Ockenfuss and N.A.O'Brien,Optical Fiber Communication Conference,FA8-1,2002 OSA Trends in Optics and Photonics Series Vol.70,Optical Society of America,Washington,DC,2002.
20.F.C.Lal,M.Li,K.Chen,H.Q.Wang,Y.Z.Song,and Y.S.Jiang,Appl.Opt,44,6181-6185,2005.
21.R.Swanepoel,J.Phys.E 16,1214-1222,1983.
22.W.K.Choi,C.K.Choo,K.K.Han,J.H.Chen,F.C.Loh and K.L.Tan,J.Appl.Phys.83,2308-2314,1998.
23.A.Feldman,E.N.Farabaugh,W.K.Haller,D.M.Sanders and R.A.Stempniak,J.Vac.Sci.Technol.A,4,2969-2964,1986.
24.K.Kanaya,K.Hojou,K.Koga.K.Toki,Jap.J.Appl.Phys,12,1297-1296,1973.
25.H.W.Kim,Dissertation for Doctor's degree of Massachusetts Institute of Technology,1994.
26.K.Ellmer,J.Phys.D:Appl.Phys.33,R17-R32,2000.
27.Y.Yamamura and N.Itoh,Ion Beam Assisted Film Growth.ed T.Itoh (Amsterdam:Elsevier) pp 59-100,1989.
28.Vienna University of Technology,"A Simple Sputter Yield Calculator,"http://eaps4.iap.tuwien.ac.at/www/surface/script/sputteryield.html.
29.C.C.Lee,D.T.Wei,J.C.Hsu and C.H.Shen,Thin Solid Films,290-291,88-93,1996.
30.A.Yamamoto,Y.Abe,M.Kawamura,K.Sasaki,Vacuum,66,269-273,2002.
31.J.M.Ngaruiya,S.Venkataraj,R.Drese,O.Kappertz,T.P.Leervad Pedersen and M.Wuttig,Phys.Stat.Sol.(a) 198,99-110,2003.
32.W.D.Sproul,D.J.Christie,D.C.Carter,Thin Solid Films,491,1-17,2005.
33.N.Malkomes,M.Verg(o|¨)hl and B.Szyszka,J.Vac.Sci.Technol.A,19,414-419,2001.
34.张盛武,中国科学技术大学硕士学位论文,2008.5.
35.唐晋发,顾培夫编,薄膜光学与技术,北京:机械工业出版社,1989.
1.B.G Bovard,Appl.Opt,28,5427-5442,1993.
2.W.E.Johnson and R.L.Crane,Proc.SPIE 2046,88-108,1993.
3.W.H.Southwell,J.Opt.Soc.Am.A,5,1558-1554,1988.
4.A.V.Tikhonravov,M.K.Trubetskov et al.,Appl.Opt,45,1515-1424,2006.
5.W.H.Southwell,R.L.Hall,and W.J.Gunning,Proc.SPIE 2046,46-59,1993.
6.W.H.Southwell,Appl.Opt,28,5091-5094,1989.
7.W.H.Southwell,Appl.Opt,36,314-318,1997.
8.J.Allen,B.Herrington,Proc.SPIE 2046,126-131,1993.
9.H.Bartzsch,S.Lange,P.Frach,and K.Goedicke,Surf& Coat Technol,180-181,616-620,2004.
10.W.H.Southwell,Opt.Lett,8,584-586,1983.
11.H.Sankur and W.H.Southwell,Appl.Opt,28,2770-2773,1989.
12.H.Yoda,D.Tanaka,O.Hanaizumi,Y.Kogami,and K.Shiralshi,Appl.Opt,45,184-190,2006.
13.E.P.Donovan,D.Van Vechten,A.D.F.Kahn,C.A.Carosella,and G.K.Hubler,Appl.Opt.28,2940-2944,1989.
14.W.J.Gunning,R.L.Hall,F.J.Woodberry,W.H.Southwell and N.Gluek,Appl.Opt,28,2945-2948,1989.
15.H.A.Abu-Safia,A.I.Al-Sharif and I.O.Aljarayesh.Appl.Opt,32,4831-4835,1993.
16.O.Heavens,Optical Properties of Thin Solid Films,Dover,New York,1965.
17.W.H.Southwell and R.L.Hall,Appl.Opt,28,2949-2951,1989.
18.杨思远,中国科学技术大学本科论文
19.P.L.Swart,P.V.Bulkin and B.M.Laequet,Opt.Eng,35,1214-1219,1997.
20.P.L.Swart,B.M.Lacquet,A.A.Chtcherbakov,and P.V.Bulkin,J.Vac.Sci.Technol.A,18,74-78,2000.
21.C.C.Lee,C.J.Tang,and J.Y.Wu,Appl.Opt,45,1333-1337,2006.
22.Q.Tang,H.Matsuda,and K.Kikuchi and S.Ogura,J.Vac.Sci.Technol.A,16, 3384-3388,1998.
23.X.R.Wang,H.Masumoto,Y.Someno and T.Hirai,Appl.Phys.Lett,72,3264-3266,1998.
24.K.Kaminska,T.Brown,G.Beydaghyan,and K.Robbie,Proc.SPIE 4833,633-639,2002.
25.K.Robbie,Y.Cui,C.Elliott,and K.Katninska,Appl.Opt,45,8298-8303,2006.
26.X.R.Wang,H.Masumoto,Y.Someno,L.D.Chen and T.Hirai,J.Vac.Sci.Technol.A,18,933-937,2000
27.X.R.Wang,H.Masumoto,Y.Someno,and T.Hirai,J.Vac.Sci.Technol.A,17,206-211,1999.
1.K.Ellmer,R.Wendt,Surf & Coating Technol,93,21-26,1997.
2.M.Chen,Z.L.Pei,X.Wang,C.Sun,L.S.Wen,J.Vac.Sci.technol.A,19,963-970,2001.
3.S.Zafar,C.S.Ferekides and D.L.Morel,J.Vac.Sci.Technol.A,13,2177-2182,1995.
4.K.Tominaga,N.Umezu,I.Mori,T.Ushiro,T.Moriga,I.nakabavashi,Thin Solid Films,334,35-39,1998.
5.K.Tominaga,T.Murayama,Y.Sato,I.Mori,Thin Solid Films,343-344,81-84,1999.
6.Vienna University of Technology,"A Simple Sputter Yield Calculator,"http://eaps4.iap.tuwien.ac.at/www/surface/script/sputteryield.html
7.K.Ellmer,J.Phys.D:Appl.Phys,33,R17-R32,2000.
8.V.Tvarozek,I.Novotny,P.Sutta,S.Flickyngerova,K.Schtereva,E.Vavrinsky,Thin Solid Films,515,8756-8760,2007.
9.O.Kappertz,R.Drese,J.M.Ngaruiya and M.Wuttig,Thin Solid Films 484,64-67,2005.
10.P.D.Rack,M.D.Potter,A.Woodard and S.Kurinec,J.Vac.Sci.Technol.A 17,2805-2810,1999.
11.J.G.Hidalgo,R.Serna,E.H.Poniatowski and C.N.Afonso,Appl.Phys.A 79,915-918,2004.
12.K.Tominaga,N.Ueshiba,Y.Shintani and O.Tada,Jpn.J.Appl.Phys.20,519-526,1981.
13.L.W.Rieth and P.H.Holloway,J.Vac.Sci.Technol.A 22,20-29,2004.
14.T.Minami,H.Sato,H.imamoto,S.Takata,Jpn.J.Appl.Phys,31,L257-L260, 1992.
15.S.Zafar,C.S.Ferekides,and D.L.Morel,J.Vac.Sci.technol.A,13,2177-2182,1995.
16.K.Tominaga,S.Iwamura,I.Fujita,Y.Shintani and O.Tada,Jpn.J.Appl.Phys.21,999-1002,1982.
17.Y.Z.Song,T.Sakurai,Vacuum,74,409-415,2004.
18.Y.Z.Song,T.Sakurai,K.Maruta,A.Matusita,S.Matsumoto,S.Saisho and K.Kikuchi,Vacuum,59,755-763,2000.
19.R.Swanepoel,J.Phys.E 16,1214-1222,1983.
20.L.J.van der Pauw,Philips Res.Repts.13,1-9,1958.
21.L.J.van der Pauw,Philips Tech.Rev.20,220-224,1958.
22.Y.J.Chen,B.Chi,H.Z.Zhang,H.Chen,Y.Chen,Mater Lett,61,144-147,2007.
23.T.P.Dr(u|¨)sedau,M.L(o|¨)hmann and B.Garke,J.Vac.Sci.Technol.A,16,2728-2732,1998.
24.S.Mahieu and D.Depla,Applied Physics Letter,90,121117-121118,2007.
25.T.P.Dr(u|¨)sedau,M.L(o|¨)hmann and B.Garke,J.Vac.Sci.Technol.A 16,2728-2732,1998.
26.J.H.Keller and R.G.Simmons,IBM J.Res.Develop.23,24-32,1979.
27.吴锦雷,纳米光电功能薄膜,北京:北京大学出版社,2006.
28.R.S.Robinson,J.Vac.Sci.technol.16,185-188,1979.
29.S.Mahieu and D.Depla,Applied Physics Letter 90,121117-121118,2007.
2.H.A.麦克劳德著,周九林,尹树百译,光学薄膜技术,北京:国防工业出版社,1974.
3.唐晋发,顾培夫编,薄膜光学与技术,北京:机械工业出版社,1989.
4.顾培夫,薄膜技术,浙江:浙江大学出版社,1990.
5.田民波,刘德令编译,薄膜科学与技术手册,北京:机械工业出版社,1991.
6.林永昌,卢维强编,光学薄膜原理,北京:国防工业出版社,1990.
7.赖发春,中国科学技术大学博士学位论文,2005.5.
8.卢维强,王华清,肖畅,杨朝佳,现代显示,73,6-9,2007.
9.洪冬梅,朱震,刘国喜,光学仪器,26,198-203,2004.
10.马汶伟,光学仪器,26,222-224,2004.
11.袁一方,陈桂莲,陈抱雪等,光学仪器,23,110-113,2001.
12.杨军,明海,王沛,唐麟,光电子技术与信息,16,10-14,2003.
13.屠海令,杜军,稀有金属,31,265-278,2007.
14.顾培夫,李海峰,章岳光等,光学仪器,23,105-109,2001.
15.B.Y.Oh,M.C.Jeong,T.H.Moon,W.Lee,J.M.Myoung,J.Y.Hwang and D.S.Seo,J.APPL.PHYS.99,124505,2.006.
16.V.Sittinger,F.Ruske,W.Wemer,B.Szyszka,B.Rech,J.H(u|¨)pkes,G.Sch(o|¨)pe and H.Stiebig,Thin Solid Films 496,16-25,2006.
17.X.Jiang,F.L.Wong,M.K.Fung,and S.T.Lee,Appl.Phys.Lett.83,1875-1877,2003.
18.H.Kim,C.M.Gilmore et al.,Appl.Phys.Lett.76,259-261,2000.
19.王永仲,现代军用光学技术,北京:科学出版社,2003.
20.杨家德,纤维光学技术在军事中的应用,北京:科学技术文献出版社,1998.
21.Argus.Macleod,Optical Interference Coatings,MA 1,Optical Society of America,Washington,DC,2004.
22.S.M.Reiss,Opt.Photonies News 8,31 1997.
23.J.A.Dobrowolski,K.M.Baird,P.D.Carman,and A.Wardorf,Opt.Acta 20,925,1973.
24.J.A.Dobrowolski,F.C.Ho,and A.Wardorf,Appl.Opt.28,2702,1989.
25.R.W.Phillips and A.F.Bleikolm,Appl.Opt.35,5529,1996.
26.R.Szip6cs,K.Ferencz,C.Spielmaun,and F.Krausz,Opt.Lett.19,201,1994.
27.C.Agashe,O.Kluth,G.Schope,H.Siekmann,J.H(u|¨)pkes,B.Rech,Thin Solid Films,442,167-172,2003.
28.C.M.Lampert,working document for the International Energy Agency,task 18,advanced glazing,1994.
29.B.Hackman-Franclin,T.J.Hauser.,and J.D.Jameson,U.S.Industrial Outlook 1993—Section 7,construction materials.
30.L.Martinu and D.Poitras,J.Vac.Sci.Technol.A,18,2619-2645,2000.
31.J.A.Dobrowolski,Optical Society of America's Handbook of Optics,edited by M.Bass McGraw-Hill,New York,1995,Chap.42.
32.F.R.Flory,Marcel Dekker,Thin Films for Optical Systems,New York,1995.
33.CHIP《新电脑》杂志社,2005.http://www.chip.cn/infolshowArticle.isp?article_id=495
34.杨基南编译,微细加工技术,1,3-9,1994.
35.沈自才,王英剑,范正修,邵建达,中国激光,32,829-834,2005.
36.沈自才,沈建,刘世杰,孔伟金,邵建达,范正修,物理学报,56,1325-1328.
37.B.G.Bovard,Appl.Opt,32,5427-5442,1993.
38.W.E.Johnson and R.L.Crane,Proc.SPIE 2046,88-108,1993.
39.H.Yoda,D.Tanaka,O.Hanalzumi,Y.Kogami,and K.Shiraishi,Appl.Opt.45,184,2006.
40.W.H.Southwell and R.L.Hall,Appl.Opt,28,2949-2951,1989.
41.V.Janicki,S.Wilbrandt,O.Stenze,D.G(a|¨)bler,N.Kaiser,A.Tikhonravov,M.Trubetskov,and T.Amotchkina,J.Opt.A,Pure Appl.Opt.7,L9-L 12,2005.
42.W.H.Southwell,Opt.Lett.8,584-586,1983.
43.J.A.Dobrowolsld,D.Poitras,P.Ma,H.Vakil,and M.Acree,Appl.Opt.41, 3075-3083,2002.
44.A.Herpin,Compt.rend.225,182,1947.
45.L.I.Epstein,J.Opt.Soc.Am,42,806-810,1952.
46.P.H.Beming,J.Opt.Soc.Am,52,431-436,1962.
47.J.A.Dobrowolski,S.H.C.Piotrowski,Appl.Opt,21,1512-1521,1981.
48.J.Allen,B.Herrington,Proe.SPIE 2046,126-131,1993.
49.W.J.Gunning,R.L.Hail,F.J.Woodberry,W.H.Southwell and N.Gluck,Appl.Opt,28,2945-2948,1989.
50.C.C.Lee,C.J.Tang,and J.Y.Wu,Appl.Opt,45,1333-1337,2006.
51.Q.Tang,H.Matsuda,and K.Kikuchi and S.Ogura,J.Vac.Sci.Teehnol.A,16,3384-3388,1998.
52.X.R.Wang,H.Masumoto,Y.Someno and T.Hirai,Appl.Phys.Lett,72,3264-3266,1998.
53.H.Bartzsch,S.Lange,P.Fraeh,and K.Goedieke,Surf& Coat Teclmol,180-181,616-620,2004.
54.H.Yoda,D.Tanaka,O.Hanaizumi,Y.Kogami,and K.Shiraishi,Appl.Opt,45,184-190,2006.
55.E.P.Donovan,D.Van Veehten,A.D.F.Kahn,C.A.Carosella,and G.K.Hubler,Appl.Opt.28,2940-2944,1989.
56.P.L.Swart,P.V.Bulkin and B.M.Lacquet,Opt.Eng,35,1214-1219,1997.
57.P.L.Swart,B.M.Lacquer,A.A.Chteherbakov,and P.V.Bulkin,J.Vac.Sci.Teehnol.A,18,74-78,2000.
58.A.Feldman,E.N.Farabaugh,W.K.Hailer,D.M.Sanders and R.A.Stempniak,J.Vac.Sei.Teclmol.A,4,2969-2964,1986.
59.F.C.Lai,M.Li,H.Q.Wang.Y.S.Jiang and Y.Z.Song,CHINESE OPTICS LETTERS,3,490-492,2005.
60.V.M.Burlakov,G.A.D.Briggs,A.P.Sutton,A.Bongiomo and A.Pasquarello,Phys.Rev.Lett.93,135501,2004.
61.Z.M.Jiang,B.Shi,D.T.Zhao,J.Liu,and X.Wang,Appl.Phys.Lett,79,3395-3397,2001.
62.L.X.Yi,J.Heitmann,R.Scholz,and M.Zacharias,Appl.Phys.Lett,81,4248-4250,2002.
63.M.Zaeharias,J.Heitmann,R.Scholz,U.Kahler,M.Sehmidt and J.Bl(a|¨)sing,Appl.Phys.Lett,80,661-663,2002.
64.H.Shibayama,S.Hasuo,T.Yamaoka,Appl.Phys.Lett,47,429-430,1985.
65.X.Y.Chen,Y.F.Lu,L.J.Tang,Y.H.Wu,B.J.Cho,X.J.Xu,J.R.Dong,W.D.Song,J.Appl.Phys,97,014913,2005.
66.M.J.O'Leary,J.H.Thmas.Ⅲ,J.Vac.Sci.Technol,A.5,106-109,1987.
67.L.J.Guo,E.Leobandung,and S.Y.Chou,Appl.Phys.Lett,70,850-852,1997.
68.M.S.Hedenqvista,K.S.Johanssonb,Surf& Coat Technol,172,7-12,2003.
69.A.Hohl,T.Wieder et al.,J.Non-Cryst.Solids,320,255-280,2003.
70.J.U.Schmidt,B.Schmidt,Mater Sci & Engine B,101,28-33,2003.
71.K.Sato,T.Izumia et al.,Appl.Surf.Sci,216,376-381,2003.
72.C.C.Umbach,J.M.Blakely,Appl.Surf.Sci,175-176,746-752,2001.
73.M.Yamada,Y.Ohmori,K.Takada,M.Kobatashi,Appl,Opt,30,682-688,1991.
74.C.J.Zhong,H.Tanaka,S.Sugawa,T.Ohmi,J.Non-Cryst.Solids,351,2232-2237,2005.
75.G.Perez,A.M.Bernal-Oliva,E.Marquez,J.M.Gonzalez-Leal,C.Morant,I.Genova,J.F.Trigo,J.M.Sanz,Thin Solid Films,485,274-283,2005.
76.A.P.Braford and G.Hass,J.Opt.Soc.Am.53,1096-1100,1963.
77.N.M.Ravindra,J.Narayan,J.Appl.Phys,60,1139-1146,1986.
78.E.Dehan,P.Temple-Boyer,R.Henda,J.J.Pedroviejo,E.Scheid,Thin Solid Films,266,14-19,1995.
79.P.G.Pai,S.S.Chao,Y.Takagi,G.Lucovsky,J.Vac.Sci.Technol.A,4,689-684,1986.
80.G.Hass AND C.Salzberg,J.Opt.Soc.Am.44,181-187,1954.
81.V.E.Vamvakas,D.Davazoglou,Microelectronics Reliability,45,986-989,2005.
82.E.Ritter,Optica Acta,9,197-202,1962.
83.M.Kitagawa and M.Tateda,Appl.Opt,24,3359-3362,1985.
84.K.L.Chopra,S.Major,D.K.Pandya,Thin Solid films,102,1-46,1983.
85.T.J.Coutts,J.D.Perkins,D.S.Ginley,T.O.Mason,in the 195~(th) Meeting of the Electrochemical Society,Seattle,Washington,1999.
86.J.Robertson,J.Non-Cryst.Sol,354,2791-2795,2008.
87.李世涛,乔学亮,陈建国,激光与光电子学进展,40,53-59,2003.
88.R.J.Cava,J.M.Philips,J.Kwo,G.A.Tomas et al.,Appl.Phys.Lett,64,2071-2072,1994.
89.J.M.Philips,J.Kwo,G.A.Tomas,S.A.Carter et al.,Appl.Phys.Lett,65,115-117,1994.
90.M.A.Aegerter,A.Reich,D.Ganz,G.Gasparro,J.P(u|¨)tz,T.Krajewski,J.Non-Crys.Sol,218,123-128,1997.
91.A.S.Ryzhikov,R.B.Vasiliev,M.N.Rumyantseva,L.I.Ryabova et al.,Mater.Sci.Eng.B,96,268-274,2002.
92.T.Minami,H.Sonohara,T.Kakumu and S.Takata,Jpn.J.Appl.Phys,34,L971-L974,1995.
93.K.H.Seo,D.H.Park,J.H.Lee,J.J.Kim,Sol.Stat.Ion,177,601-605,2006.
94.D.R.Aeosta,E.P.Zironi,E.Montoya,W.Estrada,Thin Solid Films,288,1-7,1996.
95.T.Minami,T.Kakumu,Y.Takeda and S.Takata,Thin Solid Films,290-291,1-5,1996.
96.T.Minami,Y.Takeda,S.Takata and T.Kakumu,Thin Solid Films,308-309,12-18,1997.
97.T.Minami,T.Kakumu,Y.Takeda and S.Takata,Thin Solid Films,317,326-329,1998.
98.R.Martins,P.Barquinha,A.Pimentel,L.Pereira,E.Fortunato,Thin Solid Films,516,1322-1325,2008.
99.K.Ellmer,J.Phys.D:Appl.Phys,34,3097-3108,2001.
100.Y.lgasaki and H.Saito,J.Appl.Phys,70,3613-3619,1991.
101.徐颖,高劲松,王笑夷,陈红,王彤彤,光子学报,34,1187-1189,2005.
102.ITO透明导电玻璃可行性报告,国际光电产业咨询编制,2005.2
103.H.Mbarek,M.Saadoun,B.Bessa(i|¨)s,Mater.Sci.Eng.C,26,500-504,2006.
104.M.I.Baraton,L.Merhari,H.Ferkel,J.F.Castagnet,Mater.Sci.Eng.C,19,315-321,2002.
105.C.G.Granqvist,Solar Energy Materials & Solar Cells,91,1529-1598,2007.
106.K.L.Chopral,P.D.Paulson,y and V.Dutta,Prog.Photovolt:Res.Appl,12,69-92,2004.
107.汤安东,光学精密工程,9,273-278,2001.
108.胡炳森,王剑锋,马春华,顾子平,真空科学与技术,15,135-139,1995.
109.吴华夏,洪光烈,董戴,真空电子技术,4,15-21,2000
110.A.Shimizu,M.Kanbara,M.HadaandM.Kasuga,Jpn.J.Appl.Phys,17,1435-1436,1978.
111.R.L.Hoffman,B.J.Norrisand J.F.Wager,Appl.Phys.Lett,82,733-735,2003.
112.袭著有,许启明,赵鹏,田晓珍,西安建筑科技大学学报,36,119-112,2004.
113.刘世友,材料科学与工程,17,98-101,1999.
114.任豪,中国光学学会2006年学术大会,10-030,中国广州,2006.
115.J.H.Thomas Ⅲ,Appl.Phys.Lett,42,794-796,1983.
116.S.Major,S.Kumar,M.Bhatnagar and K.L.Chopra,Appl.Phys.Lett.49,394-396,1986.
117.L.Raniero,I.Ferreira,A.Pimentel,A.Goncatlves,P.Canhola,E.Fortunato,R.Martins,Thin Solid Films,511-512,295-298,2006.
118.黄佳木,董建华,张新元,太阳能学报,24,845-650,2003.
119.B.Szyszka,Thin Solid Films,351,164-169,1999.
120.H.Ohta,H.Mizoguehi,M.Hirano,S.Narushima,T.Kamiya and H.Hosono,Appl.Phys.Lett,82,823-825,2003.
121.C.X.Wang and G.W.Yang et al.,Appl.Phys.Lett,84,2427-2429,2004.
122.I.S.Jeong,J.H.Kim,and S.Im,Appl.Phys.Lett,83,2946-2948,2003.
123.Y.I.Alivov,J.E.Van.Nostrand,D.C.Look,M.V.Chuldehev,B.M.Ataev,Appl.Phys.Lett,83,2943-2945,2003.
124.Q.X.Yu,B.Xu,Q.H.Wu,Y.Liao,G.Z.Wang and R.C.Fang et al.,Appl. Phys.Lett,83,4713-4715,2003.
125.S.Masuda,K.Kitamura,Y.Okumura and S.Miyatake et al.,J.Appl.Phys,93,1624-1630,2003.
126.F.M.Hossain,J.Nishii,S.Takagi,A.Ohtomo,and T.Fukumura et al.,J.Appl.Phys,95,7768-7777,2003.
127.Y.Anno,T.Maekawa,J.Tamaki,Y.Asano,K.Hayashi,N.Miura and N.Yamazoe,Sensor & Actuators B,24-25,623-627,1995.
128.K.Ellmer,J.Phys.D:Appl.Phys,33,R17-R32,2000.
129.S.J.Pearton,D.P.Norton,K.Ip,Y.W.Heo,T.Steiner,Prog.in Mater.Sci,50,293-340,2005.
130.J.Mass,P.Bhattacharya,R.S.katiyar,Mater.Sci & Engine.B,103,9-15,2003.
131.S.S.Lin,J.L.Huang,P,Sajgalik,Surf & Coat.Teehnol,190,49-47,2005.
132.T.Minami,H.Sato,H.Nanto and S.Tanaka,Jpn.J.Appl.Phys,24,L781-L784,1985.
133.C.Agashe,O.Kluth,J.H(u|¨)pkesm U.Zastrow,B,Rech and M.Wuttig,J.Appl.Phys,95,1911-1917,2004.
134.K.H.Kim,K.C.Park,D.Y.Ma,J.Appl.Phys,81,7764-7772,1997.
135.余俊,赵青南,赵修建,硅酸盐学报,32,1241-1245,2004.
136.M.Chen,Z.L.Pei,X.Wang,C.Sun,L.S.Wen,J.Vae.Sci.technol.A,19,963-970,2001.
137.S.Zafar,C.S.Ferekides and D.L.Morel,J.Vae.Sei.Technol.A,13,2177-2182,1995.
138.K.Tominaga,N.Umezu,I.Mori,T.Ushiro,T.Moriga,I.nakabavashi,Thin Solid Films,334,35-39,1998.
139.Y.F.Sun,W.F.Liu,S.L.Liu,Z.Y.Zou,G.T.Du,Vacuum,80,981-984,2006.
140.D.G.Lima,D.H.Kim,J.K.Kim et al.,Supedattices and Microstructures,39,107-114,2006.
141.G.J.Fang,D.J.Li and B.L.Yao,J.Crys.Grow,247,393-400,2003.
142.AZO:Transparent Conductive Coating,www.cerac.com/pubs/proddata/AZO.pdf
143.Fuji Chimera Research Institute,Inc.Market Research Report,Oct.2007.http://www.fcr.co.ip/en/
144.G..J.Ockenfuss and N.A.O'Brien,Optical Fiber Communication Conference,FA8-1,2002 OSA Trends in Optics and Photonics Series Vol.70,Optical Society of America,Washington,DC,2002.
145.X.Y.Chen,Y.F.Lu,L.J.Tang et al.,J.Appl.Phys,97,014913,2005.
146.S.Spiga,G.Tallarida,A.Borghesi,A.Sassella,G.De Santi,Thin Solid Films,325,36-41,1998.
147.T.Inokuma,Y.Wakayama,T.Muramoto,R.Aoki,Y.Kurata,and S.Hasegawa,J.Appl.Phys,83,2228-2234,1998.
148.J.Y.Zhang and Ian W.Boyd,Appl.Phys.Lett,77,3574-3576,2000.
149.Y.Z.Song,T.Sakurai,K.Kishimoto,K.Maruta,S.Matsumoto and K.Kikuchi,Thin Solid Films,334,92-97,1998.
150.J.G.Hidalgo,R.Sema,E.H.Poniatowski and C.N.Afonso,Appl.Phys.A 79,915-918(2004).
151.K.Sturm and H.U.Krebs,J.Appl.Phys,90,1061-1063,2001.
152.S.F(a|¨)thler,K.Sturm,and H.-U.Krebs,Appl.Phys.Lett,75,3766-3768,1999.
153.M.Leskel and M.Ritala,Angew.Chem.Int.Ed.42,5548-5554,2003.
154.D.Riihel(a|¨),M.Ritala,R.Matero,M.Leskel(a|¨) Thin Solid Films,259,250-255,1996.
155.J.Lu,J.Sundqvist,M.Ottosson,A.Tarre,A.Rosental,J.Aarik and A.Harsta,J.Crystal Growth,260,191-200,2004.
156.S.W.Xue,X.T.Zua,W.G.Zheng,H.X.Deng,X.Xiang,Physica B,351,209-213,2006.
157.U.Kahler and H.Hofmeister,Appl.Phys.Lett,75,641-643,1999.
158.H.Eilers,Materials Letters,62,967-969,2008.
159.H.E.Atyia,Physica B,403,16-24,2008.
160.M.M.El-Nahass,A.A.M.Farag,E.M.Ibrahim,S.Abd-El-Rahman,Vacuum,72,453-460,2004.
161.P.Patsalas,S.Logothetidis and C.Metaxa,Appl.Phys.Lett.81,466-468,2002.
162.M.Rebien,W.Henrion,M.Hong and J.P.Mannaerts,Appl.Phys.Lett.81,250-252,2002.
163.A.Kuroyanagi,Jpn.J.Appl.Phys.28,219-222,1989.
164.M.F.Al-Kuhaili,S.M.A.Durrani and E.E.Khawaja,Appl.Phys.Lett.83,4533-4535,2003.
165.M.Passlack,E.F.Schubert,W.S.Hobson,M.Hong,N.Moriya,S.N.G.Chu,K.Konstadinidis,J.P.Mannaerts,M.L.Sehnoes,and G.J.Zydzik,J.Appl.Phys,77,686-693,1995.
166.D.H.Zhang,R.W.Gao and H.L.Ma,Thin Solid Films,295,83-86,1997.
167.E.P.Donovan,D.V.Vechten,A.D.F.Kahn,C.A.Carosella,and G.K.Hubler,Appl.Opt,28,2940-2944,1989.
168.Yasumi and Yamada,Thin Solid Films,377-378,92-96,2000.
169.B.Fan,M.Suzuki,and K.Tang,Appl.Opt,45,1461-1465,2006.
170.W.D.Sproul,D.J.Christie,D.C.Carter,Thin Solid Films,491,1-17,2005.
171.S.Karanth,G.H.Shanbhogue,and C.L.Nagendra,Appl.Opt,44,6186-6192,2005.
172.J.J.Ho,C.Y.Chen,C.M.Huang,W.J.Lee,W.R.Liou,and C.C.Chang,Appl.Opt,44,6176-6180,2005.
173.R.Y.Tsai,C.S.Chang,C.W.Chu,T.Chen,F.Dai,D.Lin,S.F.Yan,and A.Chang,Appl.Opt,40,1953-1958,2001.
174.H.Y.Kumagai,IEEE TRANSACTIONS ON Parts,Hybrids,and Packaging,Vol.PHP-8,no.3,September 1972.
175.T.Yoshida,K.Nishimoto,K.Sekine,and K.Etoh,Appl.Opt,45,1375-1379,2006.
176.F.C.Lai,M.Li,K.Chen,H.Q.Wang,Y.Z.Song,and Y.S.Jiang,Appl.Opt, 44,6181-6185,2005.
177.Q.M.Song,F.Huang,M.Li,B.Xie,H.Q.Wang,Y.S.Jiang and Y.Z.Song,J.Vac.Sci.technol.A,26,265-269,.2008.
178.F.C.Lai,M.Li,H.Q.Wang,H.L.Hu,X.P Wang,J.G.Hou,Y.Z.Song,Y.S.Jiang,Thin Solid films,488,314-320,2005.
179.Y.Z.Song,T.Sakural,K.Maruta,A.Matusita,S.Matsumoto,S.Saisho and K.Kikuehi,Vacuum 59,755-763,2000.
180.Y.Z.Song,T.Sakurai,Vacuum,74,409-415,2004.
181.Y.Z.Song,Y.S.Jiang,M.Li,H.Q.Wang,J.G.Hou,Optical Interference Coatings,ME4,Optical Society of America,Washington,DC,2004.
182.J.Rodriguez,M.Gomez,J.Ederth,G.A.Niklasson,C.G.Granqvist,Thin Solid Films,365,119-125,2000.
183.D.Guerin,S.Ismat.Shah,J.Vac.Sei.Teehnol.A,15,712-715,1997.
184.K.Ellmer,R.Wendt,Surf & Coatings Technol,93,21-26,1997.
185.S.Ben Amor,L.Guedri,G.Baud,M.Jacquet,M.Ghedira,Materials Chemistry & Physics,77,903-911,2002.
186.A.Yamamoto,Y.Abe,M.Kawamura,K.Sasaki,Vacuum,66,269-273,2002.
187.S.H.Jeong,J.K.Kim et al.,Vacuum,76,507-515,2004.
1.J.U.Schmidt,B.Schmidt,Mater Sci & Engine B,101,28-33,2003.
2.K.Sato,T.Izumia et al.,Appl.Surf.Sci,216,376-381,2003.
3.M.Kitagawa and M.Tateda,Appl.Opt,24,3359-3362,1985.
4.R.Y.Tsai,C.S.Chang,C.W.Chu,T.Chen,F.Dai,D.Lin,S.F.Yan,and A.Chang,Appl.Opt,40,1593-1598,2001.
5.H.Yoda,K.Shiraishi,Y.Hiratani and O.Hanaizumi,Appl.Opt.43,3548-3554,2004.
6.赖发春,中国科学技术大学博士学位论文,2005.5.
7.F.C.Lai,M.Li,H.Q.Wang.Y.S.Jiang and Y.Z.Song,CHINESE OPTICS LETTERS,3,490-492,2005.
8.S.H.Jeong,J.K.Kim,B.S.Kim,S.H.Shim,B.T.Lee,Vacuum,76,507-515,2004.
9.L.X.Yi,J.Heitmann,R.Scholz,and M.Zacharias,Appl.Phys.Lett,81,4248-4250,2002.(2-3)
10.M.Zacharias,J.Heitmann,R.Scholz,U.Kahler,M.Schmidt and J.Bl(a|¨)sing,Appl.Phys.Lett,80,661-663,2002.
11.H.Shibayama,S.Hasuo,T.Yamaoka,Appl.Phys.Lett,47,429-430,1985.
12.M.J.O'Leary,J.H.Thmas,Ⅲ,J.Vac.Sci.Technol,A.5,106-109,1987.
13.X.Y.Chen,Y.F.Lu,L.J.Tang,Y.H.Wu,B.J.Cho,X.J.Xu,J.R.Dong,W.D.Song,J.Appl.Phys,97,014913,2005.
14.Y.Z.Song,T.Sakurai,K.Kishimoto,K.Maruta,S.Matsumoto and K.Kikuchi,Thin Solid Films 334,92-97,1998.
15.T.Roschuk,J.Wojcik,X.Tan,J.A.Davies and P.Mascher,J.Vac.Sci.Technol.A,22,883-886,2004.
16.R.R.Willey,Appl.Opt,35,4982-4986,1996.
17.E.P.Donovan,D.Van Vechten,A.D.F.Kahn,C.A.Carosella,and G.K.Hubler,Appl.Opt.28,2940-2944,1989.
18.F.Richter,H.Kupfer,P.Schlott,T.Gessner,and C.Kaufmann,Thin Solid Films 389,278-283,2001.
19.G.J.Ockenfuss and N.A.O'Brien,Optical Fiber Communication Conference,FA8-1,2002 OSA Trends in Optics and Photonics Series Vol.70,Optical Society of America,Washington,DC,2002.
20.F.C.Lal,M.Li,K.Chen,H.Q.Wang,Y.Z.Song,and Y.S.Jiang,Appl.Opt,44,6181-6185,2005.
21.R.Swanepoel,J.Phys.E 16,1214-1222,1983.
22.W.K.Choi,C.K.Choo,K.K.Han,J.H.Chen,F.C.Loh and K.L.Tan,J.Appl.Phys.83,2308-2314,1998.
23.A.Feldman,E.N.Farabaugh,W.K.Haller,D.M.Sanders and R.A.Stempniak,J.Vac.Sci.Technol.A,4,2969-2964,1986.
24.K.Kanaya,K.Hojou,K.Koga.K.Toki,Jap.J.Appl.Phys,12,1297-1296,1973.
25.H.W.Kim,Dissertation for Doctor's degree of Massachusetts Institute of Technology,1994.
26.K.Ellmer,J.Phys.D:Appl.Phys.33,R17-R32,2000.
27.Y.Yamamura and N.Itoh,Ion Beam Assisted Film Growth.ed T.Itoh (Amsterdam:Elsevier) pp 59-100,1989.
28.Vienna University of Technology,"A Simple Sputter Yield Calculator,"http://eaps4.iap.tuwien.ac.at/www/surface/script/sputteryield.html.
29.C.C.Lee,D.T.Wei,J.C.Hsu and C.H.Shen,Thin Solid Films,290-291,88-93,1996.
30.A.Yamamoto,Y.Abe,M.Kawamura,K.Sasaki,Vacuum,66,269-273,2002.
31.J.M.Ngaruiya,S.Venkataraj,R.Drese,O.Kappertz,T.P.Leervad Pedersen and M.Wuttig,Phys.Stat.Sol.(a) 198,99-110,2003.
32.W.D.Sproul,D.J.Christie,D.C.Carter,Thin Solid Films,491,1-17,2005.
33.N.Malkomes,M.Verg(o|¨)hl and B.Szyszka,J.Vac.Sci.Technol.A,19,414-419,2001.
34.张盛武,中国科学技术大学硕士学位论文,2008.5.
35.唐晋发,顾培夫编,薄膜光学与技术,北京:机械工业出版社,1989.
1.B.G Bovard,Appl.Opt,28,5427-5442,1993.
2.W.E.Johnson and R.L.Crane,Proc.SPIE 2046,88-108,1993.
3.W.H.Southwell,J.Opt.Soc.Am.A,5,1558-1554,1988.
4.A.V.Tikhonravov,M.K.Trubetskov et al.,Appl.Opt,45,1515-1424,2006.
5.W.H.Southwell,R.L.Hall,and W.J.Gunning,Proc.SPIE 2046,46-59,1993.
6.W.H.Southwell,Appl.Opt,28,5091-5094,1989.
7.W.H.Southwell,Appl.Opt,36,314-318,1997.
8.J.Allen,B.Herrington,Proc.SPIE 2046,126-131,1993.
9.H.Bartzsch,S.Lange,P.Frach,and K.Goedicke,Surf& Coat Technol,180-181,616-620,2004.
10.W.H.Southwell,Opt.Lett,8,584-586,1983.
11.H.Sankur and W.H.Southwell,Appl.Opt,28,2770-2773,1989.
12.H.Yoda,D.Tanaka,O.Hanaizumi,Y.Kogami,and K.Shiralshi,Appl.Opt,45,184-190,2006.
13.E.P.Donovan,D.Van Vechten,A.D.F.Kahn,C.A.Carosella,and G.K.Hubler,Appl.Opt.28,2940-2944,1989.
14.W.J.Gunning,R.L.Hall,F.J.Woodberry,W.H.Southwell and N.Gluek,Appl.Opt,28,2945-2948,1989.
15.H.A.Abu-Safia,A.I.Al-Sharif and I.O.Aljarayesh.Appl.Opt,32,4831-4835,1993.
16.O.Heavens,Optical Properties of Thin Solid Films,Dover,New York,1965.
17.W.H.Southwell and R.L.Hall,Appl.Opt,28,2949-2951,1989.
18.杨思远,中国科学技术大学本科论文
19.P.L.Swart,P.V.Bulkin and B.M.Laequet,Opt.Eng,35,1214-1219,1997.
20.P.L.Swart,B.M.Lacquet,A.A.Chtcherbakov,and P.V.Bulkin,J.Vac.Sci.Technol.A,18,74-78,2000.
21.C.C.Lee,C.J.Tang,and J.Y.Wu,Appl.Opt,45,1333-1337,2006.
22.Q.Tang,H.Matsuda,and K.Kikuchi and S.Ogura,J.Vac.Sci.Technol.A,16, 3384-3388,1998.
23.X.R.Wang,H.Masumoto,Y.Someno and T.Hirai,Appl.Phys.Lett,72,3264-3266,1998.
24.K.Kaminska,T.Brown,G.Beydaghyan,and K.Robbie,Proc.SPIE 4833,633-639,2002.
25.K.Robbie,Y.Cui,C.Elliott,and K.Katninska,Appl.Opt,45,8298-8303,2006.
26.X.R.Wang,H.Masumoto,Y.Someno,L.D.Chen and T.Hirai,J.Vac.Sci.Technol.A,18,933-937,2000
27.X.R.Wang,H.Masumoto,Y.Someno,and T.Hirai,J.Vac.Sci.Technol.A,17,206-211,1999.
1.K.Ellmer,R.Wendt,Surf & Coating Technol,93,21-26,1997.
2.M.Chen,Z.L.Pei,X.Wang,C.Sun,L.S.Wen,J.Vac.Sci.technol.A,19,963-970,2001.
3.S.Zafar,C.S.Ferekides and D.L.Morel,J.Vac.Sci.Technol.A,13,2177-2182,1995.
4.K.Tominaga,N.Umezu,I.Mori,T.Ushiro,T.Moriga,I.nakabavashi,Thin Solid Films,334,35-39,1998.
5.K.Tominaga,T.Murayama,Y.Sato,I.Mori,Thin Solid Films,343-344,81-84,1999.
6.Vienna University of Technology,"A Simple Sputter Yield Calculator,"http://eaps4.iap.tuwien.ac.at/www/surface/script/sputteryield.html
7.K.Ellmer,J.Phys.D:Appl.Phys,33,R17-R32,2000.
8.V.Tvarozek,I.Novotny,P.Sutta,S.Flickyngerova,K.Schtereva,E.Vavrinsky,Thin Solid Films,515,8756-8760,2007.
9.O.Kappertz,R.Drese,J.M.Ngaruiya and M.Wuttig,Thin Solid Films 484,64-67,2005.
10.P.D.Rack,M.D.Potter,A.Woodard and S.Kurinec,J.Vac.Sci.Technol.A 17,2805-2810,1999.
11.J.G.Hidalgo,R.Serna,E.H.Poniatowski and C.N.Afonso,Appl.Phys.A 79,915-918,2004.
12.K.Tominaga,N.Ueshiba,Y.Shintani and O.Tada,Jpn.J.Appl.Phys.20,519-526,1981.
13.L.W.Rieth and P.H.Holloway,J.Vac.Sci.Technol.A 22,20-29,2004.
14.T.Minami,H.Sato,H.imamoto,S.Takata,Jpn.J.Appl.Phys,31,L257-L260, 1992.
15.S.Zafar,C.S.Ferekides,and D.L.Morel,J.Vac.Sci.technol.A,13,2177-2182,1995.
16.K.Tominaga,S.Iwamura,I.Fujita,Y.Shintani and O.Tada,Jpn.J.Appl.Phys.21,999-1002,1982.
17.Y.Z.Song,T.Sakurai,Vacuum,74,409-415,2004.
18.Y.Z.Song,T.Sakurai,K.Maruta,A.Matusita,S.Matsumoto,S.Saisho and K.Kikuchi,Vacuum,59,755-763,2000.
19.R.Swanepoel,J.Phys.E 16,1214-1222,1983.
20.L.J.van der Pauw,Philips Res.Repts.13,1-9,1958.
21.L.J.van der Pauw,Philips Tech.Rev.20,220-224,1958.
22.Y.J.Chen,B.Chi,H.Z.Zhang,H.Chen,Y.Chen,Mater Lett,61,144-147,2007.
23.T.P.Dr(u|¨)sedau,M.L(o|¨)hmann and B.Garke,J.Vac.Sci.Technol.A,16,2728-2732,1998.
24.S.Mahieu and D.Depla,Applied Physics Letter,90,121117-121118,2007.
25.T.P.Dr(u|¨)sedau,M.L(o|¨)hmann and B.Garke,J.Vac.Sci.Technol.A 16,2728-2732,1998.
26.J.H.Keller and R.G.Simmons,IBM J.Res.Develop.23,24-32,1979.
27.吴锦雷,纳米光电功能薄膜,北京:北京大学出版社,2006.
28.R.S.Robinson,J.Vac.Sci.technol.16,185-188,1979.
29.S.Mahieu and D.Depla,Applied Physics Letter 90,121117-121118,2007.
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