脉冲激光沉积制备Cu掺杂ZnO薄膜的研究
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摘要
ZnO是一种宽禁带化合物直接带隙半导体材料,其室温时禁带宽度为3.37eV,具有良好的热稳定性和化学稳定性,优良的光电性能使得该材料有着广泛用途。在纯氧化锌研究了一段时间已经趋于成熟后,将其进行掺杂并研究其掺杂以后的性质己成为现在研究氧化锌这个材料的新课题。本论文系统地研究了采用KrF准分子脉冲激光沉积技术制备铜掺杂氧化锌薄膜,在不同的生长条件下和退火温度处理后研究薄膜的结构特性和发光性质。论文的主要内容有:
在氧压为5Pa,退火温度为400℃的统一条件下,我们改变n-Si(111)衬底温度来制备铜掺杂氧化锌薄膜。本实验所研究的衬底温度分别为室温、100℃、200℃、300℃,样品的XRD结果显示其具有c轴取向的生长特性。铜掺杂氧化锌薄膜的(002)衍射峰的半高宽随着衬底温度的升高而减小;衍射峰的强度增加,表明薄膜的晶体质量有所提高。
在氧压为5Pa,n-Si(111)衬底温度为100℃,退火2个小时的统一条件下,改变退火温度制各了铜掺杂氧化锌薄膜。退火温度分别为200℃、250℃、300℃、350℃,400℃样品的XRD结果显示在氧压5Pa,衬底温度为100℃,退火温度为300℃时,半高宽较小,晶粒尺寸较大,表明薄膜结晶比较好。
以上面两种生长条件在玻璃衬底上制备了铜掺杂氧化锌薄膜,并研究了其透射光谱。结果显示样品的透过率随着衬底生长温度的升高表现出先增大后减小的趋势;却随着退火温度的升高表现出先减小后增大的趋势,但是变化的幅度相对衬底温度变化时的要小。我们从中得到结论,在优化生长温度下与退火温度的条件下可以得到透射率比较高的铜掺杂氧化锌薄膜。
ZnO is a direct wide band-gap semiconductor material,and its band-gap is 3.37eV at room temperature.Besides promising thermal and chemical stability,excellent optical and electrical properties make it widely used in many fields.Such as ultraviolet light-emitting diodes, laser diodes and photodetectors.After a long time research for pure ZnO,it becomes significative to investigate ZnO film doped with rare material.In this paper,we explored pulse laser deposition(PLD) technology by KrF excimer laser to obtain Cu-doped ZnO thin films. Microstrueture and optical properties were studied systemically under different substrates temperature and annealing temperature.
1.Cu-doped ZnO thin films were prepared by PLD technology in different substrate temperature under 5Pa oxygen pressure.Annealed treatment in 400℃has been explored.The results suggest that the Cu-doped ZnO films can obtain wurtzite structure with strong c-axis orientation.Although the FWHM becomes smaller with the rise of the substrates temperature, the intensity of the XRD diffraction peaks of(002) crystal direction enhance observably,these indicated that the quality of the films was improved.
2.Films were prepared on silicon substrates at 5Pa oxygen pressures.different annealed substrate temperatures such as 200℃,250℃,300℃,350℃and400℃were taken for 2h.The results indicated that the Cu-doped ZnO film which was deposited at 100℃and annealed at 300℃has the minimal FWHM.So it's obviously that it is the perfect condition for Cu-ZnO thin films to improve the quality of crystalline mierostructure.
3.High quality thin films were deposited on pure glass substrates under the same condition which was used on silicon before.The transmission spectrum of Cu-doped ZnO/Glass films were surveyed by the UV-visible spectrophotometer.The results revealed that the transmission coefficient of thin films varied with the rise of the growth temperature.It displays the aggrandizement firstly then decreased finally.But on the contrary,It shows the decrease at the first then increased at the last when thin films annealed at different temperature.So it gives us a new direction to optimize the grown condition to improve the quality of crystal.
在氧压为5Pa,退火温度为400℃的统一条件下,我们改变n-Si(111)衬底温度来制备铜掺杂氧化锌薄膜。本实验所研究的衬底温度分别为室温、100℃、200℃、300℃,样品的XRD结果显示其具有c轴取向的生长特性。铜掺杂氧化锌薄膜的(002)衍射峰的半高宽随着衬底温度的升高而减小;衍射峰的强度增加,表明薄膜的晶体质量有所提高。
在氧压为5Pa,n-Si(111)衬底温度为100℃,退火2个小时的统一条件下,改变退火温度制各了铜掺杂氧化锌薄膜。退火温度分别为200℃、250℃、300℃、350℃,400℃样品的XRD结果显示在氧压5Pa,衬底温度为100℃,退火温度为300℃时,半高宽较小,晶粒尺寸较大,表明薄膜结晶比较好。
以上面两种生长条件在玻璃衬底上制备了铜掺杂氧化锌薄膜,并研究了其透射光谱。结果显示样品的透过率随着衬底生长温度的升高表现出先增大后减小的趋势;却随着退火温度的升高表现出先减小后增大的趋势,但是变化的幅度相对衬底温度变化时的要小。我们从中得到结论,在优化生长温度下与退火温度的条件下可以得到透射率比较高的铜掺杂氧化锌薄膜。
ZnO is a direct wide band-gap semiconductor material,and its band-gap is 3.37eV at room temperature.Besides promising thermal and chemical stability,excellent optical and electrical properties make it widely used in many fields.Such as ultraviolet light-emitting diodes, laser diodes and photodetectors.After a long time research for pure ZnO,it becomes significative to investigate ZnO film doped with rare material.In this paper,we explored pulse laser deposition(PLD) technology by KrF excimer laser to obtain Cu-doped ZnO thin films. Microstrueture and optical properties were studied systemically under different substrates temperature and annealing temperature.
1.Cu-doped ZnO thin films were prepared by PLD technology in different substrate temperature under 5Pa oxygen pressure.Annealed treatment in 400℃has been explored.The results suggest that the Cu-doped ZnO films can obtain wurtzite structure with strong c-axis orientation.Although the FWHM becomes smaller with the rise of the substrates temperature, the intensity of the XRD diffraction peaks of(002) crystal direction enhance observably,these indicated that the quality of the films was improved.
2.Films were prepared on silicon substrates at 5Pa oxygen pressures.different annealed substrate temperatures such as 200℃,250℃,300℃,350℃and400℃were taken for 2h.The results indicated that the Cu-doped ZnO film which was deposited at 100℃and annealed at 300℃has the minimal FWHM.So it's obviously that it is the perfect condition for Cu-ZnO thin films to improve the quality of crystalline mierostructure.
3.High quality thin films were deposited on pure glass substrates under the same condition which was used on silicon before.The transmission spectrum of Cu-doped ZnO/Glass films were surveyed by the UV-visible spectrophotometer.The results revealed that the transmission coefficient of thin films varied with the rise of the growth temperature.It displays the aggrandizement firstly then decreased finally.But on the contrary,It shows the decrease at the first then increased at the last when thin films annealed at different temperature.So it gives us a new direction to optimize the grown condition to improve the quality of crystal.
引文
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