大功率半导体激光器列阵的热特性研究
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摘要
随着科学技术的不断进步,光电子技术已经与人们生产和生活息息相关。其中,半导体激光器技术作为光电子技术的重要组成部分也起着非常重要的作用。现在,半导体激光器技术已经成为二十世纪发展快、成果多、学科渗透广的综合性高新技术,并广泛应用于光纤通信、工业材料处理、激光医疗、国防建设等领域。本论文从大功率半导体激光器的热特性出发,研究了800nm大功率半导体激光器列阵的结构设计、工艺制作、热特性和封装引入应变特性。在博士论文期间,取得的主要成绩和创新性成果是:
1.系统介绍了半导体激光器的基本原理和基本组成,包括光增益、量子阱结构、侧向限制、光波导和谐振腔的基本理论。
2.设计了800nm半导体激光器列阵结构。为了减小阈值电流,降低热阻和串联电阻,采用GaAs_(0.86)P_(0.14)应变单量子阱作为有源区,Al_(0.35)Ga_(0.65)As作为波导层,Al_(0.7)Ga_(0.3)As作为包层。采用大光腔波导结构,减少进入到包层的光强度,降低光损耗和热阻。提高包层掺杂能级,减小热阻和串联电阻。为了提高输出功率,列阵的填充因子为50%,腔长为1mm。为了抑制假模的出现,通过刻蚀沟道深隔离,并在沟槽上沉积SiO_2介质绝缘层,增加沟槽对假模的吸收。
3.优化了刻蚀技术、P、N面欧姆接触,研制出800nm大功率半导体激光器列阵,当占空比为20%的脉冲电流为106.5A时,峰值功率达到100.9W。
4.阈值电流方法测量有源区温度的理论基础是阈值电流随温度呈现指数变化,斜率效率随温度呈现线性变化。实际上,斜率效率随温度也呈现指数变化。我们对阈值电流方法进行修正,提出了测量有源区温度的功率-阈值电流方法,其最大偏差为4.2K,而用阈值电流法计算的偏差值最小也在9K以上。
5.将双边冷却技术引入到CS封装中,优化后的CS封装形式具有更好的散热性能,热阻更小。通过实验证实,改进后的CS封装激光器在占空比为20%时,热阻为0.1588K/W,与传统的CS封装激光器相比热阻减小了0.03K/W。
6.对激光器封装过程产生的应变进行研究,在理论上和实验上证实电致发光谱可以定性和定量测量封装引入应变和焊料层的缺陷。测量结果证实了激光器芯片焊接中由于芯片和热沉的热膨胀系数不同,封装引入应变不可避免的被引入到有源区中。此外,通过实验证实增加铟焊接层的界面厚度,可以减小封装引入应变。
With the advancement of science and technology, optoelectronic technology has been closely linked with the people’s production and livings. Semiconductor laser technology, which is an integral part of optoelectronic technology, also plays an important role. Nowadays, semiconductor laser technology has become the comprehensive, high and new technology with the more rapid development, the more results, and the wider discipline permeability in the twentieth century. It has been widely used in optical fiber communication, industrial materials processing, laser medicine, military and many other fields. In this paper, the structure design, the manufacture, the thermal characteristics and the packaging-induced strain of 800nm high power diode laser arrays were studied, taking account for the thermal characteristics, and some innovative achievements are listed as below:
The first one:the paper showed systematically the basic principles and the fundamental aspects of diode laser operation, including optical gain, quantum well structures, lateral confinement, optical waveguides and resonators.
The second one: we designed an 800nm semiconductor laser array structure. In order to reduce the threshold current, the thermal resistance and the series resistance, we used strained GaAs_(0.86)P_(0.14) single quantum well, Al_(0.35)Ga_(0.65)As material and Al_(0.7)Ga_(0.3)As material as the active region, the waveguide layer and the cladding layers, respectively. By manufacturing large optical cavity, the energy being transported in the cladding layers was very small, which leaded to small thermal and series resistances. The cladding layers could be highly doped to reduce the thermal and series resistances. To improve the output power of the diode laser arrays, the fill factor was 50% and the cavity length was 1mm. In order to suppress the appearance of so-called spurious modes, we etched deep grooves and deposited SiO2 in the grooves. These could have a sufficiently high absorption.
The third one: 800nm diode laser arrays were provided after optimizing on the etching technique and metallization The peak power can reach to 100.9W at 106.5A at the duty cycle of 20%.
The fourth one: the theoretical principle was that the threshold current and slope efficiency could be expressed as an approximately empirical and linear function of temperature. However, the temperature variation of the slope efficiency was an empirical expression indeed. After the optimization of the threshold current method, a method for the temperature of the active region, which was called power-threshold current, was provided, and the deviation was decreased to 4K.
The fifth one: Double-side cooling was induced in the CS packaging diode laser arrays. The optimized CS packaging diode laser arrays dissipated the waste heat more efficiently. The thermal resistance of the optimized diode laser arrays was 0.1588K/W and reduced 0.03K/W compared to the traditional CS packaging diode lasers.
The last one: The strain caused by device packaging was studied in high power semiconductor laser arrays. In the theory and experiment, we demonstrated that the electroluminescence microscopy could show the qualitative information for the packaging-induced strain and defects on the solder layers. After soldering, Due to the different thermal expansion coefficients of laser bar and Cu heat sink, the packaging-induced strain was induced to the active region inevitably. Furthermore, in experiments, we showed that the maximum strain level could be reduced by increasing the solder interface thickness.
1.系统介绍了半导体激光器的基本原理和基本组成,包括光增益、量子阱结构、侧向限制、光波导和谐振腔的基本理论。
2.设计了800nm半导体激光器列阵结构。为了减小阈值电流,降低热阻和串联电阻,采用GaAs_(0.86)P_(0.14)应变单量子阱作为有源区,Al_(0.35)Ga_(0.65)As作为波导层,Al_(0.7)Ga_(0.3)As作为包层。采用大光腔波导结构,减少进入到包层的光强度,降低光损耗和热阻。提高包层掺杂能级,减小热阻和串联电阻。为了提高输出功率,列阵的填充因子为50%,腔长为1mm。为了抑制假模的出现,通过刻蚀沟道深隔离,并在沟槽上沉积SiO_2介质绝缘层,增加沟槽对假模的吸收。
3.优化了刻蚀技术、P、N面欧姆接触,研制出800nm大功率半导体激光器列阵,当占空比为20%的脉冲电流为106.5A时,峰值功率达到100.9W。
4.阈值电流方法测量有源区温度的理论基础是阈值电流随温度呈现指数变化,斜率效率随温度呈现线性变化。实际上,斜率效率随温度也呈现指数变化。我们对阈值电流方法进行修正,提出了测量有源区温度的功率-阈值电流方法,其最大偏差为4.2K,而用阈值电流法计算的偏差值最小也在9K以上。
5.将双边冷却技术引入到CS封装中,优化后的CS封装形式具有更好的散热性能,热阻更小。通过实验证实,改进后的CS封装激光器在占空比为20%时,热阻为0.1588K/W,与传统的CS封装激光器相比热阻减小了0.03K/W。
6.对激光器封装过程产生的应变进行研究,在理论上和实验上证实电致发光谱可以定性和定量测量封装引入应变和焊料层的缺陷。测量结果证实了激光器芯片焊接中由于芯片和热沉的热膨胀系数不同,封装引入应变不可避免的被引入到有源区中。此外,通过实验证实增加铟焊接层的界面厚度,可以减小封装引入应变。
With the advancement of science and technology, optoelectronic technology has been closely linked with the people’s production and livings. Semiconductor laser technology, which is an integral part of optoelectronic technology, also plays an important role. Nowadays, semiconductor laser technology has become the comprehensive, high and new technology with the more rapid development, the more results, and the wider discipline permeability in the twentieth century. It has been widely used in optical fiber communication, industrial materials processing, laser medicine, military and many other fields. In this paper, the structure design, the manufacture, the thermal characteristics and the packaging-induced strain of 800nm high power diode laser arrays were studied, taking account for the thermal characteristics, and some innovative achievements are listed as below:
The first one:the paper showed systematically the basic principles and the fundamental aspects of diode laser operation, including optical gain, quantum well structures, lateral confinement, optical waveguides and resonators.
The second one: we designed an 800nm semiconductor laser array structure. In order to reduce the threshold current, the thermal resistance and the series resistance, we used strained GaAs_(0.86)P_(0.14) single quantum well, Al_(0.35)Ga_(0.65)As material and Al_(0.7)Ga_(0.3)As material as the active region, the waveguide layer and the cladding layers, respectively. By manufacturing large optical cavity, the energy being transported in the cladding layers was very small, which leaded to small thermal and series resistances. The cladding layers could be highly doped to reduce the thermal and series resistances. To improve the output power of the diode laser arrays, the fill factor was 50% and the cavity length was 1mm. In order to suppress the appearance of so-called spurious modes, we etched deep grooves and deposited SiO2 in the grooves. These could have a sufficiently high absorption.
The third one: 800nm diode laser arrays were provided after optimizing on the etching technique and metallization The peak power can reach to 100.9W at 106.5A at the duty cycle of 20%.
The fourth one: the theoretical principle was that the threshold current and slope efficiency could be expressed as an approximately empirical and linear function of temperature. However, the temperature variation of the slope efficiency was an empirical expression indeed. After the optimization of the threshold current method, a method for the temperature of the active region, which was called power-threshold current, was provided, and the deviation was decreased to 4K.
The fifth one: Double-side cooling was induced in the CS packaging diode laser arrays. The optimized CS packaging diode laser arrays dissipated the waste heat more efficiently. The thermal resistance of the optimized diode laser arrays was 0.1588K/W and reduced 0.03K/W compared to the traditional CS packaging diode lasers.
The last one: The strain caused by device packaging was studied in high power semiconductor laser arrays. In the theory and experiment, we demonstrated that the electroluminescence microscopy could show the qualitative information for the packaging-induced strain and defects on the solder layers. After soldering, Due to the different thermal expansion coefficients of laser bar and Cu heat sink, the packaging-induced strain was induced to the active region inevitably. Furthermore, in experiments, we showed that the maximum strain level could be reduced by increasing the solder interface thickness.
引文
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