高温低气压动态压力测试研究方法及实现
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摘要
本文对一种高温压力传感器及测试电路进行了介绍,该压力传感器以MEMS硅压力敏感元件为核心元件,在其外部加特殊隔热材料和吸热材料,通过采用一系列的密封等工艺制成。这种传感器克服了普通压力传感器不耐高温的缺点和特制高温压力传感器价格高的缺点。工艺简单、制作周期短、耐高温、特别适合特殊环境使用。本文的主要内容包括:
(1)详细介绍了高温压力传感器整体的设计思路,对所设及的理论原理和计算有较为详细的说明。
(2)对传感器的热学计算进行了深入的分析,详细介绍了计算所依据的理论和相关参数的选取,并且通过热学仿真和实验对理论进行了验证,找到了最合适的方案。
(3)在理论分析的基础上,充分介绍了传感器的静态和动态标定的实验方法及实验结果。
(4)为保证传感器在实际工作环境中正常工作,对传感器整体结构做振动试验。
(5)对传感器的相应测试电路做了完整的介绍。对信号调理、采集电路和相关软件都进行了介绍,并给出了采集结果。
最后对全文做了总结,并对所设计的高温压力传感器做出了展望。
In this paper, a new type of high-temperature pressure sensors and circuit have been studied, the silicon mems pressure sensor is the core of the pressure sensor,increase in its external special insulation materials and heat-absorbing material,the pressure sensors was made through the use of technology such as a sealed,this pressure sensor over come the common short comings of the sensor is not temperature,and high temperature pressure sensors made of the shortcomings of high prices, technology simple,short production cycle, high temperature, particularly suitable for the use of the special environment, the main contents of this article, including:
1 introduce the design ideas of high-temperature pressure sensor, description the theory Based on and principle and calculation。
2 analysis the calculation of thermal ,introduce the theory of calculation is based on and the selection of relevant parameters, through thermal simulation and experimental validation of the theory,,found the most appropriate idea。
3 in the basis of theoretical analysis, fully introduced the static and dynamic sensor calibration of the experimental method and experimental results。
4 accordance with the actual working environment with the sensor,the sensor were sealed and vibration tested, ensure the sensors can work in practice the normal work environment
5 complete presentation of the sensor circuit,the signal condition, acquisition circuits and related software have been introduced,given the collected results。Finally, the full summarized of the text,make the prospect of high temperature pressure sensors。
(1)详细介绍了高温压力传感器整体的设计思路,对所设及的理论原理和计算有较为详细的说明。
(2)对传感器的热学计算进行了深入的分析,详细介绍了计算所依据的理论和相关参数的选取,并且通过热学仿真和实验对理论进行了验证,找到了最合适的方案。
(3)在理论分析的基础上,充分介绍了传感器的静态和动态标定的实验方法及实验结果。
(4)为保证传感器在实际工作环境中正常工作,对传感器整体结构做振动试验。
(5)对传感器的相应测试电路做了完整的介绍。对信号调理、采集电路和相关软件都进行了介绍,并给出了采集结果。
最后对全文做了总结,并对所设计的高温压力传感器做出了展望。
In this paper, a new type of high-temperature pressure sensors and circuit have been studied, the silicon mems pressure sensor is the core of the pressure sensor,increase in its external special insulation materials and heat-absorbing material,the pressure sensors was made through the use of technology such as a sealed,this pressure sensor over come the common short comings of the sensor is not temperature,and high temperature pressure sensors made of the shortcomings of high prices, technology simple,short production cycle, high temperature, particularly suitable for the use of the special environment, the main contents of this article, including:
1 introduce the design ideas of high-temperature pressure sensor, description the theory Based on and principle and calculation。
2 analysis the calculation of thermal ,introduce the theory of calculation is based on and the selection of relevant parameters, through thermal simulation and experimental validation of the theory,,found the most appropriate idea。
3 in the basis of theoretical analysis, fully introduced the static and dynamic sensor calibration of the experimental method and experimental results。
4 accordance with the actual working environment with the sensor,the sensor were sealed and vibration tested, ensure the sensors can work in practice the normal work environment
5 complete presentation of the sensor circuit,the signal condition, acquisition circuits and related software have been introduced,given the collected results。Finally, the full summarized of the text,make the prospect of high temperature pressure sensors。
引文
[1]苑伟政.微机械与微细加工技术.西安:西北工业大学出版社,2000.1～31,36
[2]李德胜.MEMS技术及其应用.哈尔滨:哈尔滨工业大学出版社,2002.1~58
[3]梅涛,伍小平.微机电系统.北京:化学工业出版社,2003.1~13
[4]孙以材,刘玉岭,孟庆浩.压力传感器的设计、制造与应用.北京:冶金工业出版社,2000.114~115,366~382
[5]王元庆.新型传感器原理及应用.北京:机械工业出版社,2002.1~10
[6]赵锡钦.溅射薄膜技术的应用.电子机械工程,1999(6):58~60
[7]谢大刚.金属薄膜压敏技术探讨.仪表技术与传感器,1996(1):43~46
[8]刘金生.离子束沉积溅射技术及应用.北京:国防工业出版社,1986.13~20
[9]Stephen A.Campbell.微电子制造科学原理与工程技术.第二版.曾莹,严利人,王纪民等.北京:电子工业出版社,2003.304~320
[10]Y.I.Yoshiharu. Chip Integrated Software Calibrated CMOS Pressure Sensor with MCU,A/D Converter, Digital Communication Port, Signal Conditioning Circuit and Temperature Sensor. Proceedings of Transducers’97,1997(16-19):1484~1487
[11]E.Euikos, Nelson. Three dimensional for ng fibre-chip.Journal 2000 (10):492~497
[12]Klause kasten. CMOS-compatible capacitive high temperature pressure Sensors and Actuators,2000(85):147~152
[13]张世荣,文彬.双膜片的硅-蓝宝石高温压力传感器.黑龙江大学自然科学学报,2001(11):56~60
[14]刘艳艳.高性能高温压力传感器.半导体技术,2001(5):13~14
[15]Loder E. Polycrystalline silicon–based sensors. Sensors and Actuators,1996(10):9~23
[16]赵玉龙,赵立波,蒋庄德.高温压力传感器技术研究.机械工程学报,2002(12):70~72
[17]K.Petersen,J.Brown,T.Vermeulen.Ultra-stable,high-temperaturefusion bonding. Sensors and Actuators,1990(A21~A23):96~101
[18]曾永红,易新建.CYBJ-971型溅射金属薄膜压力传感器及其在自容式下井系统中的应用.传感器世界,2002(1):24~26
[19]马丽杰.溅射型应变计与传感器.传感器技术,1989(3):29~33
[20]王洪业,安志超.离子束溅射薄膜压力传感器.传感器技术学报,1993(6):47~50
[21]S.M.Rossnagel.Sputter deposition for semiconductor manufacturing. IBM Journal of Research and Development,1999(1-3):163~167
[22]陶宝祺,王妮.电阻压力应变式传感器.北京:国防工业出版社,1993.41~55
[23]沈观林,马良珵.电阻应变计及其应用.北京:清华大学出版社,1983.5~26
[24]K.Rajanna,S.Mohan,M.M.Nayak.Pressure transducer with Au-Ni tgauges. IEEE transactions on electron,1993,40(3):521~525
[25]M.M.Nayak,K.Rajanna.Performances study of a pressure transducer with meandering-path thin film strain gauges. Thin Solid Films,1990(193/194):1023~1029
[26]董玉荣,王晔,王金文.高温压力传感器的温度补偿.传感器技术,2001(10): 50~51
[27]李晶晶,岳瑞峰,刘理天.压阻式压力传感器零点输出研究.传感器技术,2002 (1):9~11
[28]Masaru Matsuno,Shinobu Abachi,Masakatsu Nakayama.A Bridge Circuit Temperature Drift Cancellation.IEEE Transactions on Instrumentation Measurement,1993,42(4):871~873
[29]C.D.Johnson,C.Chen.Bridge-to-computer data acquisition system with nulling. IEEE Trans.Instrum.Meas,1990,39(6):531~534
[30]张国瑞.有限元法.北京:机械工业出版社,1992.1~18
[31]刘国庆,杨庆东.ANSYS工程应用教程机械篇.北京:中国铁道出版社,2003. 150~298
[32]易日.使用ANSYS 6.0进行静力学分析.北京:北京大学出版社,2002.48~105
[33]颜鹰,史铁林.基于MEMS压力传感器的研究.仪表技术与传感器,2005(2):7~8
[34]魏永广,刘存.现代传感技术.沈阳:东北大学出版社,2001.70~82
[35]W.Kern,D.A.Puotinen.Cleaning Solution Based on Hydrogen Peroxide for Semiconductor Technology.RCA Rev.,1970(6):187
[36](美)徐泰然(Tai-Ran Hsu).MEMS和微系统—设计与制造.王晓浩.北京:机械工业出版社,2004.250~254
[37]郑伟涛.薄膜材料与薄膜技术.北京:化学工业出版社,2004.1~29,79~86
[38]M.Konuma.FilmDeposition by.Berlin:Springer-Verlag,1992.1~51
[39]R.V.Stuart.Vacuum Sputtering.New York:AcademicPress,1983.10~32
[40] M.A.Nicolet.Diffusion Barriers in Thin Films. Solid Films, 1978, 52:415~417
[41] J.L.Vossen,W.Kern.Thin Film ProcessesⅡ.Boston:Academic Press, 1991.52~60
[42]黄庆安.硅微机械加工技术.北京:科学出版社,1996.51~103
[43]沈桂芳,吴春瑜,姚朋军等.各向异性腐蚀技术研究与分析.传感技术学报,2001(2):140~146
[44]Lee D B.Anisotropic etching of silicon.J Appl Phys,1969,40:4569~457
[45]Oliver Powell,H Barry Harrison.Anisotropic Etching Micromechanics and Microengineering,2001(11):217~220
[2]李德胜.MEMS技术及其应用.哈尔滨:哈尔滨工业大学出版社,2002.1~58
[3]梅涛,伍小平.微机电系统.北京:化学工业出版社,2003.1~13
[4]孙以材,刘玉岭,孟庆浩.压力传感器的设计、制造与应用.北京:冶金工业出版社,2000.114~115,366~382
[5]王元庆.新型传感器原理及应用.北京:机械工业出版社,2002.1~10
[6]赵锡钦.溅射薄膜技术的应用.电子机械工程,1999(6):58~60
[7]谢大刚.金属薄膜压敏技术探讨.仪表技术与传感器,1996(1):43~46
[8]刘金生.离子束沉积溅射技术及应用.北京:国防工业出版社,1986.13~20
[9]Stephen A.Campbell.微电子制造科学原理与工程技术.第二版.曾莹,严利人,王纪民等.北京:电子工业出版社,2003.304~320
[10]Y.I.Yoshiharu. Chip Integrated Software Calibrated CMOS Pressure Sensor with MCU,A/D Converter, Digital Communication Port, Signal Conditioning Circuit and Temperature Sensor. Proceedings of Transducers’97,1997(16-19):1484~1487
[11]E.Euikos, Nelson. Three dimensional for ng fibre-chip.Journal 2000 (10):492~497
[12]Klause kasten. CMOS-compatible capacitive high temperature pressure Sensors and Actuators,2000(85):147~152
[13]张世荣,文彬.双膜片的硅-蓝宝石高温压力传感器.黑龙江大学自然科学学报,2001(11):56~60
[14]刘艳艳.高性能高温压力传感器.半导体技术,2001(5):13~14
[15]Loder E. Polycrystalline silicon–based sensors. Sensors and Actuators,1996(10):9~23
[16]赵玉龙,赵立波,蒋庄德.高温压力传感器技术研究.机械工程学报,2002(12):70~72
[17]K.Petersen,J.Brown,T.Vermeulen.Ultra-stable,high-temperaturefusion bonding. Sensors and Actuators,1990(A21~A23):96~101
[18]曾永红,易新建.CYBJ-971型溅射金属薄膜压力传感器及其在自容式下井系统中的应用.传感器世界,2002(1):24~26
[19]马丽杰.溅射型应变计与传感器.传感器技术,1989(3):29~33
[20]王洪业,安志超.离子束溅射薄膜压力传感器.传感器技术学报,1993(6):47~50
[21]S.M.Rossnagel.Sputter deposition for semiconductor manufacturing. IBM Journal of Research and Development,1999(1-3):163~167
[22]陶宝祺,王妮.电阻压力应变式传感器.北京:国防工业出版社,1993.41~55
[23]沈观林,马良珵.电阻应变计及其应用.北京:清华大学出版社,1983.5~26
[24]K.Rajanna,S.Mohan,M.M.Nayak.Pressure transducer with Au-Ni tgauges. IEEE transactions on electron,1993,40(3):521~525
[25]M.M.Nayak,K.Rajanna.Performances study of a pressure transducer with meandering-path thin film strain gauges. Thin Solid Films,1990(193/194):1023~1029
[26]董玉荣,王晔,王金文.高温压力传感器的温度补偿.传感器技术,2001(10): 50~51
[27]李晶晶,岳瑞峰,刘理天.压阻式压力传感器零点输出研究.传感器技术,2002 (1):9~11
[28]Masaru Matsuno,Shinobu Abachi,Masakatsu Nakayama.A Bridge Circuit Temperature Drift Cancellation.IEEE Transactions on Instrumentation Measurement,1993,42(4):871~873
[29]C.D.Johnson,C.Chen.Bridge-to-computer data acquisition system with nulling. IEEE Trans.Instrum.Meas,1990,39(6):531~534
[30]张国瑞.有限元法.北京:机械工业出版社,1992.1~18
[31]刘国庆,杨庆东.ANSYS工程应用教程机械篇.北京:中国铁道出版社,2003. 150~298
[32]易日.使用ANSYS 6.0进行静力学分析.北京:北京大学出版社,2002.48~105
[33]颜鹰,史铁林.基于MEMS压力传感器的研究.仪表技术与传感器,2005(2):7~8
[34]魏永广,刘存.现代传感技术.沈阳:东北大学出版社,2001.70~82
[35]W.Kern,D.A.Puotinen.Cleaning Solution Based on Hydrogen Peroxide for Semiconductor Technology.RCA Rev.,1970(6):187
[36](美)徐泰然(Tai-Ran Hsu).MEMS和微系统—设计与制造.王晓浩.北京:机械工业出版社,2004.250~254
[37]郑伟涛.薄膜材料与薄膜技术.北京:化学工业出版社,2004.1~29,79~86
[38]M.Konuma.FilmDeposition by.Berlin:Springer-Verlag,1992.1~51
[39]R.V.Stuart.Vacuum Sputtering.New York:AcademicPress,1983.10~32
[40] M.A.Nicolet.Diffusion Barriers in Thin Films. Solid Films, 1978, 52:415~417
[41] J.L.Vossen,W.Kern.Thin Film ProcessesⅡ.Boston:Academic Press, 1991.52~60
[42]黄庆安.硅微机械加工技术.北京:科学出版社,1996.51~103
[43]沈桂芳,吴春瑜,姚朋军等.各向异性腐蚀技术研究与分析.传感技术学报,2001(2):140~146
[44]Lee D B.Anisotropic etching of silicon.J Appl Phys,1969,40:4569~457
[45]Oliver Powell,H Barry Harrison.Anisotropic Etching Micromechanics and Microengineering,2001(11):217~220