微型压力传感器芯片的力学性能分析与研究
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摘要
传感器技术是现代科学技术发展水平的重要标志,是构成现代信息产业的三大支柱之一。在各种传感器中,硅压力传感器是应用最为广泛的一种,主要包括压阻式、电容式和谐振式三种类型。目前应用最广泛的是压阻式,其中主要是扩散硅压力传感器,其扩散电阻与硅衬底之间是PN结隔离,但当工作温度超过120℃时,PN结漏电加剧,使传感器特性严重恶化以至失效。
随着MEMS中新工艺和新材料的出现,压力传感器向微型化和低量程发展,必须进一步提高传感器的灵敏度,在不增加压力和芯片面积的情况下增加电阻上受到的应力,即使硅膜应力集中在电阻上。通常的做法是减小硅膜的厚度。但这样做一方面难以在工艺上控制薄膜的厚度,增大不均匀性;另外,当膜厚度小时,硅膜弯曲属于大挠度的非线性弯曲,导致传感器的非线性急剧增加,从而降低了测量精度,为了同时获得较高灵敏度和较好的线性度,必须对硅膜结构加以改进,代替原来的PN结,提高耐高温性能和稳定性。本文开展微型压力传感器芯片的力学性能分析与研究,为微型高温压力传感器的研究与开发提供理论依据。
首先,运用材料力学、弹性力学和板壳理论,分析对比了C型平膜、E型膜和双岛膜三种应变膜结构的应力分布,为下一步的计算机模拟分析和力敏电阻在应变膜上的布置提供理论依据。
其次,用有限元分析方法并借助ANSYS仿真软件,对上述三种应变膜进行了计算机模拟,探讨了应变膜表面应力分布、应力模型简化的合理性、应变膜尺寸参数对应力分布,温度对应变膜温度场分布和热应力分布的影响。
接着,研究如何用ANSYS软件实现芯片的结构优化,建立了双岛型应变膜结构的简化力学模型、优化参数和数学模型、优化分析和控制文件。在设计空间内获得最优结果及其输出输入关系,设计变量和目标函数的变化关系。并设计了传感器上力敏电阻的分布、尺寸及其阻值大小和传感器的制作工艺流程。
最后,运用ANSYS软件分别从模态分析、谐响应分析、瞬态结构动力学三个方面对传感器芯片的动态特性进行了研究,得出其动态响应特性。
Sensor technology is important in the development of modern science and technology. It is one of three greatest technique of the information industry. Silicon pressure sensor is the mostly widely used among all the kinds of sensors, which includes piezoresistive, capacitive and resonant sensors. At present, piezoresistive pressure sensors are applied most widely, that mostly are made by forming diffused strain gauges on the thin silicon diaphragm. This sensor uses isolation by reverse biased pn-juncitons, whose junction leakage current rises at elevated temperature over 120℃, which deteriorate sensor characteristic so serious that it would disable the sensor.
With the emergence of new technology and new materials in MEMS industry, pressure sensor develops along the direction of microminiaturization and low range. In order to improve the device's sensitivity, the stress on the resistance must be increased at the same pressure and chip area, namely make the stress concentrate on the resistance. The usually used method is to reduce the thickness of silicon membrane. But on the one hand, it would be more difficult to control the thickness in process, and increase the uneven of thickness. On the other hand, when the thickness is very small, silicon membrane bending is the nonlinear bending of large deflection, resulting in sharp increase in nonlinearity, consequently reduces the accuracy of device. To obtain higher sensitivity and better linearity simultaneously, the structure of silicon diaphragm must be improved to replace original pn-juncitons, to enhance the working temperature and stability. In this thiesis analysis and research on Mechanical properties of micro pressure sensor chip is to provide theoretical basis for the research and development of micro high temperature pressure sensor.
Firstly, stress distributions of three types of strain diaphragm: C-type flat diaphragm, E-type diaphragm and double-island diaphragm are analyzed and compared by material mechanics, elastic mechanics theory and theory of plates and shells to provide theoretical basis for simulation, analysis and the disposition of sensing resister on strain membrane.
Secondly, three types of pressure sensor chips are simulated by using ANSYS software on the account of Finite Element Analysis (FEA) theory. The stress distribution of strain diaphragm, rationality of the simplified model, the effect of dimension of strain diaphragm on the difference between stresses and temperature on the distribution of thermal stress and temperature field on the strain membrane is discussed.
Then, the paper investigates how to realize the structure optimization of chip by using the ANSYS software. The simplified mechanics model of double-island diaphragm is established, parameter model and mathematics model are optimized, and analysis file and control document are also optimized. The optimal result, the output-input relation of optimum design and the relation between design variables and object function are obtained by using ANSYS. The distribution, dimensions and resistance of sensitive resistor on sensor and the manufacture technology process are designed.
At last, dynamic characteristic of sensor chip is studied in modal, harmonic and transient structure dynamics by ANSYS software, and dynamic response characteristic is attained from the analysis result.
随着MEMS中新工艺和新材料的出现,压力传感器向微型化和低量程发展,必须进一步提高传感器的灵敏度,在不增加压力和芯片面积的情况下增加电阻上受到的应力,即使硅膜应力集中在电阻上。通常的做法是减小硅膜的厚度。但这样做一方面难以在工艺上控制薄膜的厚度,增大不均匀性;另外,当膜厚度小时,硅膜弯曲属于大挠度的非线性弯曲,导致传感器的非线性急剧增加,从而降低了测量精度,为了同时获得较高灵敏度和较好的线性度,必须对硅膜结构加以改进,代替原来的PN结,提高耐高温性能和稳定性。本文开展微型压力传感器芯片的力学性能分析与研究,为微型高温压力传感器的研究与开发提供理论依据。
首先,运用材料力学、弹性力学和板壳理论,分析对比了C型平膜、E型膜和双岛膜三种应变膜结构的应力分布,为下一步的计算机模拟分析和力敏电阻在应变膜上的布置提供理论依据。
其次,用有限元分析方法并借助ANSYS仿真软件,对上述三种应变膜进行了计算机模拟,探讨了应变膜表面应力分布、应力模型简化的合理性、应变膜尺寸参数对应力分布,温度对应变膜温度场分布和热应力分布的影响。
接着,研究如何用ANSYS软件实现芯片的结构优化,建立了双岛型应变膜结构的简化力学模型、优化参数和数学模型、优化分析和控制文件。在设计空间内获得最优结果及其输出输入关系,设计变量和目标函数的变化关系。并设计了传感器上力敏电阻的分布、尺寸及其阻值大小和传感器的制作工艺流程。
最后,运用ANSYS软件分别从模态分析、谐响应分析、瞬态结构动力学三个方面对传感器芯片的动态特性进行了研究,得出其动态响应特性。
Sensor technology is important in the development of modern science and technology. It is one of three greatest technique of the information industry. Silicon pressure sensor is the mostly widely used among all the kinds of sensors, which includes piezoresistive, capacitive and resonant sensors. At present, piezoresistive pressure sensors are applied most widely, that mostly are made by forming diffused strain gauges on the thin silicon diaphragm. This sensor uses isolation by reverse biased pn-juncitons, whose junction leakage current rises at elevated temperature over 120℃, which deteriorate sensor characteristic so serious that it would disable the sensor.
With the emergence of new technology and new materials in MEMS industry, pressure sensor develops along the direction of microminiaturization and low range. In order to improve the device's sensitivity, the stress on the resistance must be increased at the same pressure and chip area, namely make the stress concentrate on the resistance. The usually used method is to reduce the thickness of silicon membrane. But on the one hand, it would be more difficult to control the thickness in process, and increase the uneven of thickness. On the other hand, when the thickness is very small, silicon membrane bending is the nonlinear bending of large deflection, resulting in sharp increase in nonlinearity, consequently reduces the accuracy of device. To obtain higher sensitivity and better linearity simultaneously, the structure of silicon diaphragm must be improved to replace original pn-juncitons, to enhance the working temperature and stability. In this thiesis analysis and research on Mechanical properties of micro pressure sensor chip is to provide theoretical basis for the research and development of micro high temperature pressure sensor.
Firstly, stress distributions of three types of strain diaphragm: C-type flat diaphragm, E-type diaphragm and double-island diaphragm are analyzed and compared by material mechanics, elastic mechanics theory and theory of plates and shells to provide theoretical basis for simulation, analysis and the disposition of sensing resister on strain membrane.
Secondly, three types of pressure sensor chips are simulated by using ANSYS software on the account of Finite Element Analysis (FEA) theory. The stress distribution of strain diaphragm, rationality of the simplified model, the effect of dimension of strain diaphragm on the difference between stresses and temperature on the distribution of thermal stress and temperature field on the strain membrane is discussed.
Then, the paper investigates how to realize the structure optimization of chip by using the ANSYS software. The simplified mechanics model of double-island diaphragm is established, parameter model and mathematics model are optimized, and analysis file and control document are also optimized. The optimal result, the output-input relation of optimum design and the relation between design variables and object function are obtained by using ANSYS. The distribution, dimensions and resistance of sensitive resistor on sensor and the manufacture technology process are designed.
At last, dynamic characteristic of sensor chip is studied in modal, harmonic and transient structure dynamics by ANSYS software, and dynamic response characteristic is attained from the analysis result.
引文
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[6]D.Niarchos.Magnetic MEMS:key issues and some applications.Sensors and Actuators A 2003(109):166-173
[7]苑伟政,马炳和.微机械与微细加工技术.西安:西北工业大学出版社,2000.1-31,36-40
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[16]Francesca Campabadal,Josep Lluis Carreras,Enric Cabruja.Flip-chip packaging of piezoresistive pressure sensors.Sensors and Actuators A,2006(132):415-419
[17]Per Dannemand Andersen,Birte Hoist J(?)rgensen,Lars Lading.Sensor foresight-technology and market.Technovation,2004(24):311-320
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