InAs/GaAs量子点生长及两段式半导体光放大器研制
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摘要
经过近半个世纪的发展,半导体光放大器(SOA)在光电子器件和光通信领域内已经得到了广泛的研究和应用,体材料SOA和量子阱SOA都已经实现了商品化生产。但是由于体材料SOA自身性能的限制,没有在光通信系统中得到大规模使用。低维纳米材料特别是量子点材料是当前国际研究热点,受到了广泛的关注和重视。为了提高SOA的性能,增强其在光通信系统中使用的灵活性,本文研制了新型低维纳米结构两段式量子阱SOA,测试了SOA器件性能,并对基于交叉增益的两段式SOA波长转换器进行了模拟仿真；本文还对量子点和量子点分子的金属有机化合物气相沉积(MOCVD)生长及其光学性质进行了研究。具体研究内容如下：
(1)成功研制了两段式量子阱SOA。在InP衬底上,采用MOCVD设备生长了混合应变InGaAsP量子阱有源区和SOA其他结构,并对生长材料进行了测试分析。成功制作了两段式量子阱SOA,对SOA器件性能进行了测试,测试结果表明,改变两段的注入电流能调整两段式量子阱SOA的中心波长、增益和饱和输出功率,从而适用不同的应用场合。
(2)理论研究了两段式SOA在波长转换器上的应用。针对两段式SOA特点,在Connelly宽带模型基础上,建立了两段式SOA理论模型,模拟了两段式SOA交叉增益调制波长转换器性能,结果表明,调节两段的注入电流,能有效加速载流子恢复,抑制转换光的码型效应。
(3)研究了InAs/GaAs量子点的生长。首先研究了量子点的生长机理,以及MOCVD生长参数对InAs/GaAs量子点的影响。然后系统地调查了盖层对量子点结构和光学性质的改善,实验结果表明,低温和高温的双盖层结构对量子点性能有较大提升；In组分渐变的InGaAs盖层有利于提高量子点发光效率,改善量子点均匀性。最后还生长了一种光致发光光谱宽度高达183nm的多模量子点,并研究了InGaAs应力减小层和InAs沉积厚度对多模量子点的影响。
(4)研究了侧向耦合InAs/GaAs量子点分子的制备。提出了一种自组装生长方法,该方法采用MOCVD设备通过合适选择生长参数制作量子点分子,不需要采用特殊的模板或者特别的工艺流程,具有实现简单的优点。实验发现,量子点分子的形成和特性对生长温度和InAs沉积厚度非常敏感,且量子点分子的形成会导致发光波长红移。研究了InGaAs盖层对InAs量子点分子的影响,随着InGaAs盖层中In组分和厚度的增加,量子点分子的发光波长发生红移。获得了光致发光光谱宽为209m,发光效率较高的宽谱量子点分子,这种宽光谱量子点分子有望在宽光谱器件中得到应用。
Semiconductor optical amplifiers (SOAs) have achieved extensive research and wide applications in optoelectronic devices and optical networks after nearly half a century of development, and bulk SOAs and quantum well SOAs have already realized commercial production. However, bulk SOAs have not been widely used in practical optical communication systems due to the performance limitation. The low-dimensional nanostructure, especially the zero-dimensional quantum dot (QD) structure, is the present research focus all over the world, and it has attracted considerable interest and has been studied intensively in optoelectronic device applications. In this dissertation, in order to improve the performance of SOA and enhance the application flexibility in optical communication systems, a low-dimensional nanostructural SOA--two-section quantum well SOA is fabricated, and the performance of the SOA is analyzed. The wavelength converter using two-electrode SOA is simulated. In addition, we also investigate the structural and optical properties of the QDs and quantum dot molecules (QDMs) grown by metal-organic chemical vapor deposition (MOCVD). The research contents are summarized as follows:
(1) Two-electrode quantum well SOAs are successfully fabricated. At first, strain compensated InGaAsP quantum well active region and other SOA's structures are grown by MOCVD on InP substrates, and characteristics of the wafers are measured and analyzed. Secondly, two-electrode quantum well SOAs are successfully fabricated and the performance of the SOA is measured. The results show that the peak wavelength, gain and saturated output power of the SOA can be tuned through the change of the injection current of the two segments. Therefore, the SOA with adjustable performances can adapt different applications.
(2) Wavelength converter by using two-electrode SOA is theoretically investigated. According to features of two-electrode SOA, the simulation model, which takes into account carrier diffusion process, is set up on the basis of Connelly's broadband model, and the performance of wavelength converter is simulated by using this model. The results show that the carrier recovery time can be effectively reduced, and the pattern effect of converted light can be greatly suppressed.
(3) The growth of InAs/GaAs QDs is studied. At first, the growth mechanism of QD growth is analyzed, and the effects of growth parameters on the QD properties are discussed. Secondly, the InAs QD characteristics with different cap layers are systematically investigated, the results show that the double cap layer structure with low-temperature and high-temperature layer can greatly improve the QDs'performance. In addition, the In graded InGaAs cap layer can increase photoluminescence intensity and improve the uniformity of the QD size. Finally, an InAs/GaAs QD structure with the full width at half maximum (FWHM) of 183nm is obtained. The influences of In composition of InGaAs strain-reducing layer and the InAs coverage on the optical properties of multi-modal QDs are studied.
(4) The preparation of laterally aligned InAs/GaAs QDMs is studied. A self-assembled growth method is proposed, which does not require special template and process, and QDMs are fabricated by MOCVD through appropriately selecting growth parameters. So the method has the advantage of simple implementation. The experiment results show that the formation of QDMs is very sensitive to growth temperature and InAs coverage, and it causes the redshift of emission wavelength. The effects of InGaAs cap layer on the optical properties are also investigated, and the results show that redshift of PL wavelength is observed with increasing the In composition and thickness of InGaAs SRL. Finally, a QDM sample with high emission efficiency and FWHM of 209 nm is grown. It is very promising for the broad-spectrum QDMs to employ in broad-spectrum devices.
(1)成功研制了两段式量子阱SOA。在InP衬底上,采用MOCVD设备生长了混合应变InGaAsP量子阱有源区和SOA其他结构,并对生长材料进行了测试分析。成功制作了两段式量子阱SOA,对SOA器件性能进行了测试,测试结果表明,改变两段的注入电流能调整两段式量子阱SOA的中心波长、增益和饱和输出功率,从而适用不同的应用场合。
(2)理论研究了两段式SOA在波长转换器上的应用。针对两段式SOA特点,在Connelly宽带模型基础上,建立了两段式SOA理论模型,模拟了两段式SOA交叉增益调制波长转换器性能,结果表明,调节两段的注入电流,能有效加速载流子恢复,抑制转换光的码型效应。
(3)研究了InAs/GaAs量子点的生长。首先研究了量子点的生长机理,以及MOCVD生长参数对InAs/GaAs量子点的影响。然后系统地调查了盖层对量子点结构和光学性质的改善,实验结果表明,低温和高温的双盖层结构对量子点性能有较大提升；In组分渐变的InGaAs盖层有利于提高量子点发光效率,改善量子点均匀性。最后还生长了一种光致发光光谱宽度高达183nm的多模量子点,并研究了InGaAs应力减小层和InAs沉积厚度对多模量子点的影响。
(4)研究了侧向耦合InAs/GaAs量子点分子的制备。提出了一种自组装生长方法,该方法采用MOCVD设备通过合适选择生长参数制作量子点分子,不需要采用特殊的模板或者特别的工艺流程,具有实现简单的优点。实验发现,量子点分子的形成和特性对生长温度和InAs沉积厚度非常敏感,且量子点分子的形成会导致发光波长红移。研究了InGaAs盖层对InAs量子点分子的影响,随着InGaAs盖层中In组分和厚度的增加,量子点分子的发光波长发生红移。获得了光致发光光谱宽为209m,发光效率较高的宽谱量子点分子,这种宽光谱量子点分子有望在宽光谱器件中得到应用。
Semiconductor optical amplifiers (SOAs) have achieved extensive research and wide applications in optoelectronic devices and optical networks after nearly half a century of development, and bulk SOAs and quantum well SOAs have already realized commercial production. However, bulk SOAs have not been widely used in practical optical communication systems due to the performance limitation. The low-dimensional nanostructure, especially the zero-dimensional quantum dot (QD) structure, is the present research focus all over the world, and it has attracted considerable interest and has been studied intensively in optoelectronic device applications. In this dissertation, in order to improve the performance of SOA and enhance the application flexibility in optical communication systems, a low-dimensional nanostructural SOA--two-section quantum well SOA is fabricated, and the performance of the SOA is analyzed. The wavelength converter using two-electrode SOA is simulated. In addition, we also investigate the structural and optical properties of the QDs and quantum dot molecules (QDMs) grown by metal-organic chemical vapor deposition (MOCVD). The research contents are summarized as follows:
(1) Two-electrode quantum well SOAs are successfully fabricated. At first, strain compensated InGaAsP quantum well active region and other SOA's structures are grown by MOCVD on InP substrates, and characteristics of the wafers are measured and analyzed. Secondly, two-electrode quantum well SOAs are successfully fabricated and the performance of the SOA is measured. The results show that the peak wavelength, gain and saturated output power of the SOA can be tuned through the change of the injection current of the two segments. Therefore, the SOA with adjustable performances can adapt different applications.
(2) Wavelength converter by using two-electrode SOA is theoretically investigated. According to features of two-electrode SOA, the simulation model, which takes into account carrier diffusion process, is set up on the basis of Connelly's broadband model, and the performance of wavelength converter is simulated by using this model. The results show that the carrier recovery time can be effectively reduced, and the pattern effect of converted light can be greatly suppressed.
(3) The growth of InAs/GaAs QDs is studied. At first, the growth mechanism of QD growth is analyzed, and the effects of growth parameters on the QD properties are discussed. Secondly, the InAs QD characteristics with different cap layers are systematically investigated, the results show that the double cap layer structure with low-temperature and high-temperature layer can greatly improve the QDs'performance. In addition, the In graded InGaAs cap layer can increase photoluminescence intensity and improve the uniformity of the QD size. Finally, an InAs/GaAs QD structure with the full width at half maximum (FWHM) of 183nm is obtained. The influences of In composition of InGaAs strain-reducing layer and the InAs coverage on the optical properties of multi-modal QDs are studied.
(4) The preparation of laterally aligned InAs/GaAs QDMs is studied. A self-assembled growth method is proposed, which does not require special template and process, and QDMs are fabricated by MOCVD through appropriately selecting growth parameters. So the method has the advantage of simple implementation. The experiment results show that the formation of QDMs is very sensitive to growth temperature and InAs coverage, and it causes the redshift of emission wavelength. The effects of InGaAs cap layer on the optical properties are also investigated, and the results show that redshift of PL wavelength is observed with increasing the In composition and thickness of InGaAs SRL. Finally, a QDM sample with high emission efficiency and FWHM of 209 nm is grown. It is very promising for the broad-spectrum QDMs to employ in broad-spectrum devices.
引文
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