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新型光刻胶及玻璃刻蚀应用研究
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摘要
本论文是关于环氧树脂改性超支化感光聚合物的合成、以该感光树脂制备厚型光刻胶极其在玻璃刻蚀加工方面的应用研究。以偏苯三酸酐、环氧氯丙烷和甲基丙烯酸缩水甘油酯一步反应制备了羧基功能化的感光超支化聚酯,通过环氧树脂两端的环氧基与超支化聚酯的羧基反应制备了改性感光聚合物,改变反应物配比,合成了不同感光特性的树脂。GPC、DSC、TGA及力学性能结果表明:当改性环氧树脂用量为70%(官能团比)时,聚合物的性能最佳。通过残膜率—曝光时间曲线表征了以超支化感光树脂配制的光刻胶的感光特性。初始曝光时间T_0,残膜反差值γ_(gel)可以通过多种因素来调整,制得了初始曝光时间2.7s,残膜反差值达到2.8的光刻胶。在混合光源以及接触曝光的条件下分辨率达到2~3μm,且图像十分清晰,断面整齐。
     研究了活性稀释剂及助剂对光刻胶性能的影响,确定了以超支化感光聚合物为基体树脂的厚型光刻胶的光刻工艺,研制了适宜的显影液。光刻工艺基本条件为:前烘温度为65℃,前烘时间为20~25分钟;曝光时间为5分钟;显影液为丙酮/乙醇=3(质量比),显影时间为5分钟;后烘温度为70℃。研制的厚型光刻胶有效厚度约为100μm,极限透光深度为272μm。在接触曝光条件下,胶厚为80μm左右时,深宽比能达到1:1。
     以环氧改性的感光树脂配制的光刻胶用于玻璃化学刻蚀的保护层,其耐刻蚀性能较传统光刻胶有明显提高。以HF酸为主体的玻璃刻蚀剂,研究了HCl、HNO_3以及氟化铵对玻璃化学刻蚀的影响,在HF:HNO_3:H_2O:NH_4F=1:3:6:0.74(质量比)时,所得的混合刻蚀剂对载玻片玻璃的刻蚀速度≥35μm/min;以环氧改性的超支化感光树脂为基体树脂的光刻胶形成玻璃刻蚀的单层掩膜,可得到线宽50μm的清晰刻蚀图样,玻璃的刻蚀深度超过38μm。
This work is about the synthesis of photo reactive hyperbranched polyesters modified with epoxy resin, the preparation of negative thick photoresists with these photo reactive polyesters, and application as the mask in the chemical etching for microfabrication of glass. Photo reactive hyperbranched polyesters terminated with-COOH were prepared by trmellitic anhydride, epichlorohydrin and grycidol methacrylate. The modification of the polyesters was performed through the reaction of the epoxy groups on the epoxy resin with the -COOH. A serios of photosensitive resins with difference in photosensitivity were prepared and was characterized by GPC, DSC and TGA. Photocuring behaviours of resin and the photoresists were studied. Sensitivity and contract of the photoresists were measured by gel content High sensitivity and high contract (T_(0, gel) andγ_(gel) were 2.71s and 2.802, respectively) were realized. Clear patterns with smooth surface and resolution reached to 2~3μm were prepared with the photoresists through contact exposure with mixed UV light.
     Effects of reactive diluents and additives on the properties of the photosists were studied. The photolithographic conditions and the developing solution for the thick negative-tone UV photoresist were defined as: prebaking at 65℃for 20~25min, exposure time 5min; developed for 5 min in acetone/ethanol=3 (m/m) and post baking at 70℃. With single-layer coatings the thicknesses of the dried photoresist over 50μm was achieved, and over 100μm thicknesses was also achieved by mulicoating. The aspect ratio of thick (80μm) photoresist was about 1:1.
     Photo masks for glass etching were prepared with the photoresists composed of the modified photoreactive resins. The wet chemical etching agents made of HF and HCl, HNO_3 exhibited high etching rate (≥35μm/min). Photoresists made of the modified photoreactive hyperbranched polyesters were patterned with line width of 50μm. Glass etching with depth for over 38μm was realized using the photoresist as the only mask.
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