基于RSD的重频脉冲功率系统的设计与实现
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摘要
大功率超高速半导体开关RSD(Reversely Switched Dynistor)在微秒和亚微秒量级的高压大电流领域具有明显的优势,开通时的速度很快并且能承受很高的电流和di/dt。
本文首先介绍了RSD的结构及其换流原理,讨论了采用反向注入控制的预充方式的RSD开通机理和正常开通所需预充电荷量的推算过程。接着对RSD脉冲放电电路设计进行了研究:直接式预充和谐振式预充。直接式预充相对简单,预充电压、电流调节非常方便,但一般只适合应用在RSD的单次开通;谐振触发方式适合于大功率的应用,可靠性高,适合应用在RSD的重复开通。随后在介绍磁开关的机理的基础上,研究了它与RSD的配合应用。采用简单的RLC振荡电路通过实验拟合得到了磁开关的磁滞回线并提取相关参数,并计算出磁开关的阻断时间,同时研究了磁开关所引入的饱和电感对电路的影响,以及磁开关的损耗并给出了减少损耗的设计方法,还对磁开关的消磁电路进行了设计。最后研究了基于RSD的重频脉冲功率系统,首先介绍了该重频系统的组成:充电模块、驱动模块、电路保护模块、散热模块、RSD重频电路模块和负载。随后对每一个模块进行了设计和分析。最后针对不同的充电模块分别建立了模型进行实验。
研究结果表明,基于RSD的重频脉冲功率系统工作正常。工频变压器充电的方式简单,维护方便,但频率很低,实验中获得了频率为0.056Hz,导通电流峰值约为548A,脉宽为3.2μs,di/dt达3.42×10~2 A/μs的重频波形;倍压大电容充电方式可以获得很高的频率,但是存在大电流充电脉冲,影响元件的寿命,实验中获得了频率分别为10Hz、20Hz、30Hz、40Hz、50Hz、60Hz,其工作电压为2200～2400V,电流峰值为2300～2500A,di/dt约为500A/μs的波形;开关电源逆变充电方式具有充电电流平稳,速度快的优点,但是系统复杂,成本较高,实验中获得了频率为10Hz、电压约为3100V,电流高达6500A,di/dt约为1300A/μs的波形。
High-power high-speed semiconductor switch RSD (Reversely Switched Dynistor) has obvious advantages in the microsecond and sub-microsecond high-voltage high-current field. It can open fast and withstand high current and di/dt.
This paper first described the structure of RSD and its converter principle, discussed the pre-injection control using the reverse-charge mechanism and the required amount of pre-charge for the normal opening process. Then, researched on the design of RSD pulse discharge circuit: Direct Triggering Circuit and Resonant Triggering Circuit. Direct triggering circuit is relatively simple, because the pre-charge voltage and the current regulation are very convenient to design, but generally suitable for application in the single pulse environment. On the other side, resonant trigger circuit is designed for the application of high power, high reliability, and repeated pulses environment. Next part, studied the mechanism of the magnetic switch which was used as a co-application switch with RSD. The magnetic hysteresis loop of magnistor was fitted with voltage and current which were measured in serial RLC oscillate circuit, then the relative parameters were distilled to help designing its saturation time. Discussed the effect of the saturated inductance and the loss of the magnetic switch and gave the design method to reduce losses, and then designed the magnetic degaussing circuit. Finally, this paper focused on the repetition pulsed power system based on RSD devices. The modules of the system consist that following as charging module, drive module, circuit protection module, cooling module, RSD-frequency circuit module and the load. Each module was designed and analyzed in the following part. And then established the modules and experimented.
The results show that the repetition pulsed power system based on RSD devices is running normal. The transformer charging way is more easily designed and maintained, but the frequency is low: only 0.056Hz by the experiment, while the peak current is about 548 A, the pulse width is about 3.2μs, and the di/dt is about 3.42×10~2 A/μs. Voltage-multiplying charging way can achieve very high frequency, but the charging current is large which will affect the life of the devices. The experiment obtains a double of frequency waveforms: 10Hz, 20Hz, 30Hz, 40Hz, 50Hz, 60Hz, and their working voltage is about 2200 ~ 2400V, while the current peak is about 2300 ~ 2500 A, and the di/dt is about 500 A/μs. Switching power inverter supply charging way has the advantages of stable and fast charging current, but the charging module is complexity and high cost. The frequency that in the experiment is 10Hz, while the voltage is about 3100V, the current is up to 6500 A, and the di/dt is about 1300 A/μs .
本文首先介绍了RSD的结构及其换流原理,讨论了采用反向注入控制的预充方式的RSD开通机理和正常开通所需预充电荷量的推算过程。接着对RSD脉冲放电电路设计进行了研究:直接式预充和谐振式预充。直接式预充相对简单,预充电压、电流调节非常方便,但一般只适合应用在RSD的单次开通;谐振触发方式适合于大功率的应用,可靠性高,适合应用在RSD的重复开通。随后在介绍磁开关的机理的基础上,研究了它与RSD的配合应用。采用简单的RLC振荡电路通过实验拟合得到了磁开关的磁滞回线并提取相关参数,并计算出磁开关的阻断时间,同时研究了磁开关所引入的饱和电感对电路的影响,以及磁开关的损耗并给出了减少损耗的设计方法,还对磁开关的消磁电路进行了设计。最后研究了基于RSD的重频脉冲功率系统,首先介绍了该重频系统的组成:充电模块、驱动模块、电路保护模块、散热模块、RSD重频电路模块和负载。随后对每一个模块进行了设计和分析。最后针对不同的充电模块分别建立了模型进行实验。
研究结果表明,基于RSD的重频脉冲功率系统工作正常。工频变压器充电的方式简单,维护方便,但频率很低,实验中获得了频率为0.056Hz,导通电流峰值约为548A,脉宽为3.2μs,di/dt达3.42×10~2 A/μs的重频波形;倍压大电容充电方式可以获得很高的频率,但是存在大电流充电脉冲,影响元件的寿命,实验中获得了频率分别为10Hz、20Hz、30Hz、40Hz、50Hz、60Hz,其工作电压为2200～2400V,电流峰值为2300～2500A,di/dt约为500A/μs的波形;开关电源逆变充电方式具有充电电流平稳,速度快的优点,但是系统复杂,成本较高,实验中获得了频率为10Hz、电压约为3100V,电流高达6500A,di/dt约为1300A/μs的波形。
High-power high-speed semiconductor switch RSD (Reversely Switched Dynistor) has obvious advantages in the microsecond and sub-microsecond high-voltage high-current field. It can open fast and withstand high current and di/dt.
This paper first described the structure of RSD and its converter principle, discussed the pre-injection control using the reverse-charge mechanism and the required amount of pre-charge for the normal opening process. Then, researched on the design of RSD pulse discharge circuit: Direct Triggering Circuit and Resonant Triggering Circuit. Direct triggering circuit is relatively simple, because the pre-charge voltage and the current regulation are very convenient to design, but generally suitable for application in the single pulse environment. On the other side, resonant trigger circuit is designed for the application of high power, high reliability, and repeated pulses environment. Next part, studied the mechanism of the magnetic switch which was used as a co-application switch with RSD. The magnetic hysteresis loop of magnistor was fitted with voltage and current which were measured in serial RLC oscillate circuit, then the relative parameters were distilled to help designing its saturation time. Discussed the effect of the saturated inductance and the loss of the magnetic switch and gave the design method to reduce losses, and then designed the magnetic degaussing circuit. Finally, this paper focused on the repetition pulsed power system based on RSD devices. The modules of the system consist that following as charging module, drive module, circuit protection module, cooling module, RSD-frequency circuit module and the load. Each module was designed and analyzed in the following part. And then established the modules and experimented.
The results show that the repetition pulsed power system based on RSD devices is running normal. The transformer charging way is more easily designed and maintained, but the frequency is low: only 0.056Hz by the experiment, while the peak current is about 548 A, the pulse width is about 3.2μs, and the di/dt is about 3.42×10~2 A/μs. Voltage-multiplying charging way can achieve very high frequency, but the charging current is large which will affect the life of the devices. The experiment obtains a double of frequency waveforms: 10Hz, 20Hz, 30Hz, 40Hz, 50Hz, 60Hz, and their working voltage is about 2200 ~ 2400V, while the current peak is about 2300 ~ 2500 A, and the di/dt is about 500 A/μs. Switching power inverter supply charging way has the advantages of stable and fast charging current, but the charging module is complexity and high cost. The frequency that in the experiment is 10Hz, while the voltage is about 3100V, the current is up to 6500 A, and the di/dt is about 1300 A/μs .
引文
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[2] John Mankowski, Magne Kristiansen. A Review of Short Pulse Generator Technology. IEEE Transactions on Plasma Science, 2000, 28(1): 102~108
[3] Wang Fei, Kuthi Andras, Gundersen Martin A. Compact High Repetition Rate Pseudospark Pulse Generator. IEEE Transaction on Plasma Science, 2005, 33(4): 1177~1181
[4]李正瀛.脉冲功率技术.北京:水利水电出版社, 1992
[5]王莹.脉冲功率技术综述.电气技术, 2009(4): 5~9
[6]李谋涛. RSD脉冲发生器主回路与触发回路研究: [硕士学位论文].武汉:华中科技大学图书馆, 2005
[7]邓林峰. RSD的换流物理模型研究: [硕士学位论文].武汉:华中科技大学图书馆, 2007
[8]陈首燊,李丁九.重复频率脉冲功率技术.电工电能新技术, 1988(3): 15~19
[9]谭宇刚,韩旻,陈立栋等. 100kV/2A三相恒流重复频率充电装置.强激光与粒子束, 2002, 14(5): 762~766
[10]邵涛.重复频率纳秒脉冲气体击穿研究: [博士学位论文].北京:中国科学院研究生院, 2006
[11] Klaus Bergmann, Martin Müller, Dirk Reichartz, et al. Electrode Phenomena and Lifetime Considerations in a Radial Multichannel Pseudospark Switch. IEEE Transactions on Plasma Science, 2000, 28(5): 1486~1490
[12] Son Y G, Jang S D, Oh J S, et al. A Study of High-power Switch with Thyristor for Pulse Power Applications. Proceedings of LINAC 2002, Gyeongju, Korea, 2002: 201~203
[13] Ramezani E, Welleman A and Siefken J. High Peak Current, High di/dt Thyristors for Closing switch Applications. Ninth IEEE International Pulsed Power Conference Albuquerque New Mexico. 1993(2): 680~683
[14] Thomas Stiasny, Peter Streit. A new Combined Local and Lateral Design Technique for Increased SOA of Large Area IGCTs. Proceedings of the 17 International Symposium on Power Semiconductor Devices & IC's May 23-26, Santa Barbara,CA, 2005: 203~206
[15]陈洪斌,孟凡宝,李爱萍等.基于SOS开关的脉冲源研制.高电压技术, 2005, 31(9): 56~58
[16]张适昌,严萍,王珏.半导体断路开关及其应用.高电压技术, 2002 , 28 (增刊): 23~25
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